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Method for preparing Fe doped ZnO room-temperature diluted magnetic semiconductor material

A dilute magnetic semiconductor, room temperature technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of obtaining room temperature ferromagnetism, and achieve the effect of easy operation, good repeatability and easy promotion.

Inactive Publication Date: 2008-07-23
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Among them, there are few reports on Fe-doped ZnO dilute magnetic semiconductor materials in the world, and the results of the existing reports are not the same. Among them, only Potzger et al. observed room temperature in Fe-doped ZnO single crystal samples. Ferromagnetism ["AppliedPhysics Letters" (Volume 88, 2006, P052508)], while other reports failed to obtain room temperature ferromagnetism in this material

Method used

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Examples

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Embodiment 1

[0014] Preparation of 0.03mol room temperature dilute magnetic semiconductor Zn by using the present invention 1-x Fe x O(x=0.005) material. The first step is to weigh and analyze pure Zn(NO 3 ) 2 ·6H 2 O powder 8.92g and Fe(NO 3 ) 3 9H 2 O powder 0.0606g, of which Fe 3+ The doping concentration is 0.1%, put it in a beaker, add 200ml deionized water to dissolve it completely, and form Fe 3+ and Zn 2+ Mixed solution; according to NO 3 - Ion moles (0.06042mol) and OH - The number of moles of ions is 1:1. Weigh 2.4168g of analytically pure NaOH powder and add 100ml of deionized water to prepare a NaOH solution. In the second step, pour the prepared NaOH solution into Fe 3+ and Zn 2+ In the mixed solution, keep stirring, add ammonia water dropwise at the same time, control the pH=8 of solution, make Fe 3+ and Zn 2+ complete precipitation, forming Fe(OH) 3 and Zn(OH) 2 The precipitates were mixed; the precipitates were filtered, washed 5 times with deionized water...

Embodiment 2

[0016] Preparation of 0.01 mol room temperature dilute magnetic semiconductor Zn by using the present invention 1-x Fe x O(x=0.01) material. The first step is to weigh and analyze pure Zn(NO 3 ) 2 ·6H 2 O powder 2.945g and Fe(NO 3 ) 3 9H 2 O powder 0.0404g, of which Fe 3+ The doping concentration is 1%, put it in a beaker, add 200ml deionized water to dissolve it completely, and form Fe 3+ and Zn 2+ Mixed solution; according to NO 3 - Ion moles (0.101mol) and OH - The number of moles of ions is 1:1. Weigh 0.804g of analytically pure NaOH powder and add 100ml of deionized water to prepare a NaOH solution. In the second step, pour the prepared NaOH solution into Fe 3+ and Zn 2+ In the mixed solution, keep stirring, add ammonia water dropwise at the same time, control the pH=8 of solution, make Fe 3+ and Zn 2+ complete precipitation, forming Fe(OH) 3 and Zn(OH) 2 The precipitates were mixed; the precipitates were filtered, washed 5 times with deionized water, an...

Embodiment 3

[0018] Preparation of 0.05 mol room temperature dilute magnetic semiconductor Zn by using the present invention 1-x Fe x O(x=0.02) material. The first step is to weigh and analyze pure Zn(NO 3 ) 2 ·6H 2 O powder 14.5765g and Fe(NO 3 ) 3 9H 2 O powder 0.404g, of which Fe 3+ The doping concentration is 2%, put it in a beaker, add 300ml deionized water to dissolve it completely, and form Fe 3+ and Zn 2+ Mixed solution; according to NO 3 - Ion moles (0.101mol) and OH - The number of moles of ions is 1:1. Weigh 4.04g of analytically pure NaOH powder and add 100ml of deionized water to prepare a NaOH solution. In the second step, pour the prepared NaOH solution into Fe 3+ and Zn 2+ In the mixed solution, keep stirring, add ammonia water dropwise at the same time, control the pH=9 of solution, make Fe 3+ and Zn 2+ complete precipitation, forming Fe(OH) 3 and Zn(OH) 2 The precipitates were mixed; the precipitates were filtered, washed 5 times with deionized water, an...

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Abstract

The invention provides a method for preparing a Fe-doped ZnO room temperature diluted magnetic semiconductor material, which adopts a coprecipitation method and includes: A. prepare a mixed solution of Fe<3+> and Zn<2+> and a NaOH solution; B. mix the mixed solution of Fe<3+> and Zn<2+> and the NaOH solution to form a precipitate, then filter, separate and wash the precipitate; C. dry, pre-sinter, grind, tablet and sinter the precipitate to obtain the Fe-doped ZnO room temperature diluted magnetic semiconductor material. The invention provides a completely new method for preparing the Fe-doped ZnO room temperature diluted magnetic semiconductor material and the Fe-doped ZnO room temperature diluted magnetic semiconductor material prepared by the method has room temperature ferromagnetism.

Description

technical field [0001] The invention belongs to the field of novel semiconductor spintronics materials, and in particular relates to a preparation method of a transition metal-doped zinc oxide room temperature dilute magnetic semiconductor material. technical background [0002] In the last century, the semiconductor industry based on the use of electronic charges set off the third technological revolution in human history, which greatly promoted the progress of society. Another degree of freedom for electrons, spin, has been completely ignored in the past. Nowadays, the operating speed and storage density of traditional devices are getting closer and closer to their theoretical limits, and people are working on exploring new information processing mechanisms. The development of spintronic devices that simultaneously exploit the charge and spin properties of electrons has begun to become a research hotspot in this field. As a new type of semiconductor material, dilute magn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
Inventor 袁松柳王永强田召明何惊华
Owner HUAZHONG UNIV OF SCI & TECH
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