Chemical vapor deposition preparation method for Fe-doped monolayer MoS2

A chemical vapor deposition, single-layer technology, applied in the direction of molybdenum sulfide, etc., to achieve the effect of high crystal quality and high quality

Active Publication Date: 2018-11-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] At present, the effect of metal elements on layered MoS 2 The doping technology is not yet mature, only two-dimensional MoS 2 Manganese doping can be achieved, based on the research needs of magnetic properties, there is an urgent need for an achievable iron-doped monolayer MoS 2 technology

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  • Chemical vapor deposition preparation method for Fe-doped monolayer MoS2
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  • Chemical vapor deposition preparation method for Fe-doped monolayer MoS2

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Embodiment Construction

[0021] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0022] like figure 1 Shown, is the Fe-doped monolayer MoS of the present invention 2 A schematic diagram of the device prepared by chemical vapor deposition; the device is composed of a low-temperature heating zone and a high-temperature heating zone, and the placement sequence of each reactant is shown in the figure.

[0023] The Fe-doped monolayer MoS described in this embodiment 2 The chemical vapor deposition preparation method is specifically:

[0024] Step 1. Weigh 1.2g of sublimed sulfur and 18mg of MoO respectively 3 , 5 mg FeS 2 , and placed in two quartz boats.

[0025] Step 2, dissolving 3,4,9,10-perylenetetraic dianhydride in water, wherein the mass ratio of 3,4,9,10-perylenetetraic dianhydride to water is 0.6%.

[0026] Step 3, the solution prepared in step 2 is added dropwise on the SiO 2 / Si substrate, pla...

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Abstract

The invention belongs to the production of two-dimensional nano-materials, and concretely relates to a chemical vapor deposition preparation method for an Fe-doped monolayer MoS2. Sublimed sulfur is used as a sulfur source, molybdenum trioxide is used as a molybdenum source, an Fe compound is selected as an Fe element dopant, highly-pure argon is used as a current carrying gas to transport a precursor to a reaction area, a substrate selects SiO2 / Si, and the substrate is pretreated before a growth reaction. The whole growth process comprises a spatial gas phase reaction process and a surface growth process. Low-valence transition metal oxide, transition metal oxysulfides, transition metal sulfides and various other intermediate groups are generated in the spatial gas phase reaction process,the Fe compound reacts with all the various intermediate groups on the upper part of the substrate together with the current carrying gas, a large area of the Fe-doped monolayer MoS2 grows on the substrate through adsorption, diffusion, reaction and desorption processes, and the largest size can reach 30 [mu]m.

Description

technical field [0001] The invention belongs to the preparation of two-dimensional nanomaterials, in particular to a Fe-doped monolayer MoS 2 Chemical vapor deposition preparation method. Background technique [0002] In 2004, Konstantin Novoselov and Andre Geim first used mechanical exfoliation to prepare nanoscale graphene with extremely small thickness. Since then, the research on two-dimensional nanomaterials has kicked off. Graphene has been widely used in solar cells, sensors, and flexible displays due to its superior mechanical properties, optical properties, and electrical conductivity. However, graphene's zero-bandgap feature hinders its development in the semiconductor field. In recent years, in addition to graphene, two-dimensional materials such as transition metal sulfides, two-dimensional chromium iodide, and two-dimensional hexagonal boron nitride have also been prepared and applied, which greatly promoted the development of two-dimensional materials. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06
CPCC01G39/06C01P2004/04C01P2004/20C01P2004/61C01P2004/64
Inventor 彭波张梦婕
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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