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Growth method of terbium gallium garnet crystal

A technology of terbium gallium garnet and a growth method, which is applied in the field of preparing doped terbium gallium garnet magneto-optical crystals, can solve the problems of small crystal size, difficulty in industrialized production, and complicated process compared with the pulling method, and achieves the advantages of suppressing volatilization, Excellent performance

Inactive Publication Date: 2012-06-06
UNIONLIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the crystal size grown by these two methods is still too small to meet the requirements of some large-scale devices. Moreover, the process is more complicated than the pulling method, and it is difficult to realize industrial production.

Method used

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  • Growth method of terbium gallium garnet crystal
  • Growth method of terbium gallium garnet crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1: use commercial high-purity raw material, by molar ratio Tb 2 o 3 :(Ga 2 o 3 +Al 2 o 3 )=3:5.10 (Material A) and Tb 2 o 3 :(Ga 2 o 3 +Al 2 o 3 )=3:5.15 (Material B) Weigh high-purity Tb 4 o 7 , Ga 2 o 3 and Al 2 o 3 , wherein the aluminum ion doping concentration x is 0.15, and Tb is prepared according to the above-mentioned liquid phase co-precipitation method steps 3 Ga 4.85 al 0.15 o 12 polycrystalline material. Material B is used as the original material, and material A is used as the added material. Al-doped TGG crystals were grown by the pulling method according to the process of seeding, necking, shouldering, equal diameter, and finishing. The pulling speed was 0.8mm / h and the rotation speed was 12r / min. After annealing, a completely transparent aluminum-doped TGG crystal with a diameter of 25 mm and a length of 45 mm was obtained. The Verdet constant measured at 1064nm at room temperature is 0.145min / (Oe·cm).

Embodiment 2

[0032] Embodiment 2: use commercially available high-purity raw material, by molar ratio Tb 2 o 3 :(Ga 2 o 3 +Fe 2 o 3 )=3:5.10 (Material A) and Tb 2 o 3 :(Ga 2 o 3 +Fe 2 o 3 )=3:5.15 (Material B) Weigh high-purity Tb 4 o 7 , Ga 2 o 3 and Fe 2 o 3 , wherein the iron ion doping concentration x is 0.15, and Tb is prepared according to the above-mentioned liquid phase co-precipitation method 3 Ga 4.85 Fe 0.15 o 12 polycrystalline material. Material B is used as the original material, and material A is used as the added material. The iron-doped TGG crystals were grown by the pulling method according to the process of seeding, necking, shouldering, equal diameter, and finishing. The pulling speed was 0.8mm / h and the rotation speed was 12r / min. After annealing, a completely transparent iron-doped TGG crystal with a diameter of 25 mm and a length of 40.5 mm was obtained. The Verdet constant at 1064nm measured at room temperature is 0.14min / (Oe·cm).

Embodiment 3

[0033] Embodiment 3: use commercially available high-purity raw material, by molar ratio Tb 2 o 3 :(Ga 2 o 3 +Al 2 o 3 +Fe 2 o 3 )=3:5.10 (Material A) and Tb 2 o 3 :(Ga 2 o 3 +Al 2 o 3 +Fe 2 o 3 )=3:5.15 (Material B) Weigh high-purity Tb 4 o 7 , Ga 2 o 3 、Al 2 o 3 and Fe 2 o 3 , where the doping concentration x of aluminum ions is 0.15, and the doping concentration x of iron ions is 0.15, and Tb is prepared according to the steps of the above-mentioned liquid phase co-precipitation method 3 Ga 4.7 al 0.15 Fe 0.15 o 12 polycrystalline material. Material B is used as the original material, and material A is used as the added material. Al-doped TGG crystals were grown by the pulling method according to the process of seeding, necking, shouldering, equal diameter, and finishing. The pulling speed was 0.8mm / h and the rotation speed was 12r / min. After annealing, a completely transparent Al-doped TGG crystal with a diameter of 25.6 mm and a length of 43 mm...

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Abstract

The invention relates to a Czochralski growth method of a terbium gallium garnet (TGG) magneto-optical crystal, comprising the following steps: preparing a Tb3Ga5-xMxO12 polycrystal by liquid-phase coprecipitation and letting the TGG magneto-optical crystal grow by using a Czochralski method, wherein M represents one or two elements selected from Al or Fe. The method combines the advantages of the TGG crystal and a TAG crystal, lets an Al-doped TGG (Tb3Ga5-xAlxO12, x=0-0.5) magneto-optical crystal, an Fe-doped TGG (Tb3Ga5-xFexO12, x=0-0.5) magneto-optical crystal or a TGG double doped with Al and Fe (Tb3Ga5-x-yAlxFeyO12, x+y=0-0.5) magneto-optical crystal grow by using the Czochralski method, the growth process is simple and easy to industrialize, the Verdet constant of the TGG magneto-optical crystal is 10-20 % higher than that of the TGG crystal, the crystal size of the TGG magneto-optical crystal is several times higher than that of the TAG crystal, and the TGG magneto-optical crystal is an optical isolator material having excellent performance.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method for preparing a magneto-optical crystal doped with terbium gallium garnet. Background technique [0002] Compared with traditional communication technology, optical fiber communication has the following characteristics: (1) Optical fiber is small in size and light in weight; (2) Large in capacity, fast in speed and low in loss; (3) High in transmission reliability; (4) Noise ratio, error rate Bit rate, low information distortion, etc. At present, with the rapid development of optical fiber technology in the near-infrared region, optical isolators are increasingly used in information transmission. [0003] Optical isolators can be used to eliminate the reverse light generated in optical fiber transmission. The existence of reverse light will lead to the self-coupling effect between the systems, making the excitation source unstable, generating reflection noise and self-exc...

Claims

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Application Information

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IPC IPC(8): C30B27/02C30B28/04C30B29/28
Inventor 柳祝平黄小卫王有明
Owner UNIONLIGHT TECH
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