132 results about "Garnet crystals" patented technology

A material capable of producing a sintered body of cubic system garnet type Li₇La₃Zr₂O₁₂ as a solid electrolyte having specified ion conductivity by firing at relatively low temperature in short time. The material for the solid electrolyte is an oxide containing Li, La, Zr and Bi, and the oxide has a cubic system garnet crystal structure where La sites are partly or entirely substituted by Bi.

Scintillator compositions having a garnet crystal structure useful for the detection of high-energy radiation, such as X, beta, and gamma radiation, contain (1) at least one of terbium and lutetium; (2) at least one rare earth metal; and (3) at least one of Al, Ga, and In. Terbium or lutetium may be partially substituted with Y, La, Gd, and Yb. In particular, the scintillator composition contains both terbium and lutetium. The scintillators are characterized by high light output, reduced afterglow, short decay time, and high X-ray stopping power.

A temperature-gradient device for growing crystals with large area and a method of growing crystals. The device comprises a bell-like vacuum resistance oven, cone crucible and a heater in the oven, the crucible at the center of the oven, the heater comprising main cylinder heater of graphite and auxiliary cone heater with an irregular shape, vacuum system, UPS regulated power supply, two sets of controllable silicon trigger circuits, two sets of temperature controllers. The device could adjust automatically temperature gradient in growing crystals.The invention could grow complete nonsplitingcrystals with the size of more than 5 inch.

A method of depositing a coating is disclosed, which method calls for providing a substrate, and thermally spraying a ceramic powder thereon to form a coating. The ceramic powder has a garnet crystal structure phase, and the thermal spraying in turn forms a coating on the substrate that includes a garnet crystal structure phase.

The invention provides a synthetic melting body method of growing crystal, using pulling method to seed, shrink neck, and extend shoulder, as the growth at equal diameter, adopting soaking method and/or temperature gradient method. It can grow large-sized high-quality crystals, especially oxide crystals like sapphire substrate crystal, doped or undoped aluminum oxide crystal, aluminate crystal, etc. It has the advantages of adopting pulling, soaking and temperature gradient methods: able to grow large-sized crystals, a little pollution, and able to observe the liquid surface and the growing situation of crystal; able to use the original pulling devices; the crystal quality is good, and has low dislocation density and good integrity and optical uniformity, easy to industrialize.

The invention relates to a Czochralski growth method of a terbium gallium garnet (TGG) magneto-optical crystal, comprising the following steps: preparing a Tb3Ga5-xMxO12 polycrystal by liquid-phase coprecipitation and letting the TGG magneto-optical crystal grow by using a Czochralski method, wherein M represents one or two elements selected from Al or Fe. The method combines the advantages of the TGG crystal and a TAG crystal, lets an Al-doped TGG (Tb3Ga5-xAlxO12, x=0-0.5) magneto-optical crystal, an Fe-doped TGG (Tb3Ga5-xFexO12, x=0-0.5) magneto-optical crystal or a TGG double doped with Al and Fe (Tb3Ga5-x-yAlxFeyO12, x+y=0-0.5) magneto-optical crystal grow by using the Czochralski method, the growth process is simple and easy to industrialize, the Verdet constant of the TGG magneto-optical crystal is 10-20 % higher than that of the TGG crystal, the crystal size of the TGG magneto-optical crystal is several times higher than that of the TAG crystal, and the TGG magneto-optical crystal is an optical isolator material having excellent performance.

A polycrystalline scintillator for detecting soft X-rays, which comprises Ce as a light-emitting element and at least Y, Gd, Al, Ga and O, and has a garnet crystal structure, and a composition represented by the general formula of (Y_1−x−zGd_xCe_z)_3+a(Al_1−uGa_u)_5−aO₁₂, wherein 0≦a≦0.1, 0.15≦x≦0.3, 0.002≦z≦0.015, and 0.35≦u≦0.55, with 0.05-1 ppm by mass of Fe and 0.5-10 ppm by mass of Si by outer percentage, a ratio μ₅₀/μ₁₀₀ of 3 or more, wherein μ₅₀ is an absorption coefficient of X-rays at 50 keV, and μ₁₀₀ is an absorption coefficient of X-rays at 100 keV, and afterglow of 800 ppm or less after 3 ms from the termination of X-ray irradiation.

The invention discloses the crystallization technology domain, a kind of pure static state double heating temperature gradient method crystal growth installment, including the bell glass type perfect vacuum unit crystal stove, in has 4 electrodes, 2 pays the plate, the double heating element, provides the double power source, double controls the warm heating system. The heating element constitutes by the rectangular undulation plank auxiliary heating element. Advocates auxiliary heating element on, underneath and all around is equipped with the good heat preservation effect on hot back plate, gets down the hot back plate and the side shield establishment, advocates in space which the auxiliary heating element surrounds, by has seed crystal the trough round the cone-shape crucible constitution crystal growth room. The invention crystal growth installment, the airtight performance good, the hot field is stable. Suits to grows the large diameter center, the high temperature crystal, like sapphire crystal, yttrium aluminum garnet crystal, aluminum ytrium crystal, as well as calcium fluoride and so on crystal and so on.

A growth process of cerium dosed Y-Al garnet crystal is carried out by dosing Sc2O3 or Lu2O3 at mol. ratio of Al2O3 : Y2O3 : CeO2+A2O3 = 5:3 (1-x-y) :6x:3y, wherein, 0.1% <= x <= 10%, 0.1x <= y<=x, A2O3 = Sc2O3 or Lu2O3. The process can reduce poor placement in crystal and increase flash of crystal by improvement of radial match between Ce and Y ions.

The invention discloses a gadolinium yttrium scandium gallium garnet crystal (GYSGG) and a crystal growth method by a melt method thereof. The molecular formula of the crystal can be expressed as Gd3xY3(1-x)Sc2Ga3(1+delta)O12 (the x is equal to between 0 and 1 or between -0.2 and 0.2); Gd2O3, Y2O3, Sc2O3 and Ga2O3, or corresponding other compounds of gadolinium, yttrium, scandium, and gallium canbe used to perform the material mixing, and the premise is that the Gd3xY3(1-x)Sc2Ga3(1+delta)O12 is produced; prepared raw materials are subject to the perfect mixing, press forming and high temperature sintering, and then become an initial raw material of crystal growth; the initial raw material of the growth is placed into a crucible, is heated to fully melt down, and then becomes an initial melt of the growth by the melt method, and then melt methods such as a pulling method, a crucible descending method or a temperature gradient method as well as other melt methods can be used for the growth; for the melt method which needs seed crystals to directionally grow, the seed crystals are GYSGG monocrystals or yttrium scandium gallium garnet (YSGG) monocrystals or gadolinium scandium gallium garnet (GSGG) monocrystals. The GYSGG monocrystals can be used as a substrate material of a Bi3+-doped yttrium iron garnet epitaxial film.

The invention relates to a method for growing a terbium-aluminum garnet crystal by using a guide die pulling method, comprising the following steps of: placing a guide die internally provided with a longitudinal gap into a crucible; adding a polycrystal raw material into the crucible; heating the crucible to melt the polycrystal raw material; immersing a molten mass of the polycrystal raw material into a gap at the lower part of the guide die so as to raise the molten mass of the polycrystal raw material to an upper surface of the guide die under the action of capillary effect along the longitudinal gap of the guide die; and then pulling a lower seed crystal into a single crystal consistent with the shape of the guide die. By the invention, a large-size terbium-aluminum garnet single crystal can be prepared, post processing procedures can be simultaneously simplified and the cost for preparing the crystal can be reduced; in addition, the growth speed of the crystal is high, the optical homogeneity of the prepared crystal is favorable and the problem that a large-size body single crystal is not difficult to prepare by adopting a pulling method can be solved.

The invention discloses an Yb-Ca-Li-Nb garnet crystal in the laser crystal and instrument domain, which possesses Yb: Ca3LixNb15+xGa3.5-2xO12 as general formula with Yb: CLNGG in short, wherein the X is 0-0.75; the Yb doping density is less than 30at.%; the Yb: CLNGG can be continuous and pulse laser instrument to prepare end surface pump, which forms laser instrument with acoustic-optic modulation Q, electrooptical modulation Q, negative modulation Q and lock mould.

The invention discloses a doping gadolinium yttrium scandium gallium garnet, a gadolinium yttrium scandium gallium aluminium garnet and a method of the fused mass normal crystal for preparing the gadolinium yttrium scandium gallium garnet and the gadolinium yttrium scandium gallium aluminium garnet crystal or other corresponding compound for preparing; mixing the prepared raw material fully and pressing forming, and becoming initial raw material for crystal growth after high temperature calcination or non high temperature calcination; adding the growth initial raw material into a pot for heating fully to melt and becoming an initial melt of crystal growth with melt method, the obtained crystal can be used as a solid laser working substance.

The invention provides silicate fluorescent ceramic with a full-spectrum emission effect. The chemical formula of the silicate fluorescent ceramic is shown as following: Ca3-x-y-z-mCexPryMnzNamSc2Si3O12 (I), wherein x is greater than or equal to 0.001 and less than or equal to 0.2, y is greater than or equal to 0 and less than or equal to 0.1, z is greater than or equal to 0.03 and less than or equal to 0.4, and m is greater than or equal to 0 and less than or equal to 0.3. The silicate fluorescent ceramic adopts a garnet crystal structure, belongs to a cubic crystal system, and has a space group of Ia3d. The silicate fluorescent ceramic provided by the invention is stable in physicochemical property; under the effective excitation of blue light, the emission wavelength scope of the silicate fluorescent ceramic is broad; blue-green light, yellow light, red light and deep-red light are covered in the spectrum; a low-color-temperature high-color-rendering white-light LED can be manufactured by using such single fluorescent ceramic, namely the silicate fluorescent ceramic; the problem about reabsorption caused by the mixing of multi-color fluorescent powder can be solved; the silicate fluorescent ceramic can be applied to high-power blue-light LEDs or LD pumping white-light LEDs; and the high-end display and illumination requirements can be met.

The invention discloses an ytterbium and erbium-doped yttrium scandium gallium garnet crystal. The crystal has the chemical composition of YbaErbY3-a-bSc2Ga3O12, wherein a is greater than 0 and is less than or equal to 2; and b is equal to 0.9. The invention also discloses a preparation method of the ytterbium and erbium-doped yttrium scandium gallium garnet crystal. Through the ytterbium and erbium-doped yttrium scandium gallium garnet crystal obtained by the invention, high-efficiency dioxide pumping laser output can be realized.

The invention relates to a raw material synthesizing method for growing terbium gallium garnet crystal by a pulling method, which comprises the following steps: a. dissolving Ga2O3 into nitric acid solution to obtain gallium nitrate solution; b. dissolving Tb4O7 into the nitric acid solution to obtain terbium nitrate solution; c. fully mixing the two solutions according to the molar ratio of Ga:Tb=3:5 to obtain a mixing solution A; d. preparing ammonia solution with certain concentration of 2.5 mol/L; e. adding the mixing solution A and the ammonia solution dropwise into a bigger container, and keeping the pH value of the solution between 9 and 11 till the solution is completely deposited; d. keeping the sediments static for a certain period of time and then sequentially washing, filtering and depositing; e. drying and pressing the deposited terbium gallium garnet precursor; and f. sintering the pressed terbium gallium garnet at high temperature for a proper period of time. A terbium gallium garnet raw material can be used for growing a single crystal by a pulling method, the obtained crystal has high quality and no obvious cracking, scattering, stripes and black spots, and the processing finished product rate of the terbium gallium garnet crystal is high.

The invention discloses a preparation method of yttrium aluminum garnet crystal film doped with metal ions. The preparation method comprises the following steps: pressing raw material powders of yttrium aluminum garnets doped with metal ions into a green body used for a deposition coating film according to proportion, adopting electron beam evaporation-deposition process, focusing and injecting electron beams generated by an electron gun into the green body, controlling the electron beams to automatically scan and uniformly heat the pre-melted green body, primarily sintering the green body for crystallizing so as to obtain porcelain, then increasing the power of the electron gun so as to further heat the green body, thus melting, evaporating and depositing the green body on a lining substrate so as to form a film, then annealing the film under vacuum or protection atmosphere, and finally obtaining the yttrium aluminum garnet crystal film doped with metal ions, which is crystallized effectively. The method can realize the high-quality, low-cost and large-area batch production of the yttrium aluminum garnet crystal film doped with metal ions, the prepared yttrium aluminum garnet crystal film doped with metal ions can be used as novel light wave guide materials, laser work medium and functional film materials.

The invention relates to alkali metal doped garnet type lithium lanthanum zirconium oxide powder and a preparation method thereof. The chemical formula of the powder is Li<7+2a>La<3-a>MZr2O12, a islarger than 0 and smaller than or equal to 0.2, the crystal structure is a cubic phase, and the alkali metal M is one of potassium, rubidium and cesium. The alkali metal doped garnet type lithium lanthanum zirconium oxide powder provided by the invention is high in purity, small in grain size, narrow in grain size distribution and good in dispersity, and can be better applied to composite solid electrolyte. Besides, the preparation method provided by the invention is simple in process, good in repeatability, low in sintering temperature (the solid-phase sintering temperature of a standard cubic-phase garnet crystal is generally 1100-1300 DEG C), more energy-saving and environment-friendly, and easy for industrial production.

The invention provides a luminescent material. The luminescent material has a garnet crystal structure and a chemical composition molecular formula is (Ybx,Rey,Az,Gd3-x-y-z)(Gaw,Al5-w)O12, wherein Re comprises an Er element and A is one or a combination of two or more of elements Y, Lu, B, Tb and Sc; x, y, z and w are mol content of the corresponding elements; the x is more than 0.01 and less than 1.2, the y is more than 0.01 and less than 1.2, the z is more than 0 and less than 1.5 and the w is more than 2 and less than 3. The luminescent material provided by the invention can be used for converting an infrared spectrum with the wavelength of being close to 980nm into visible light for emitting, so that a light spectrum modification material is applied to silicon-based solar cells and the light spectrum responding matching property between a light spectrum and the silicon-based solar cells is better, and furthermore, the energy conversion efficiency of the silicon-based solar cells is improved.

The invention relates to an annealing method for improving luminous efficiency of a cerium-doped yttrium aluminum garnet crystal, which is characterized by performing low temperature oxygen annealing or high temperature hydrogen annealing on the cerium-doped yttrium aluminum garnet (Ce:YAG) crystal grown by a graphite heater method. The method comprises the following steps: cleaning the crystal with acetone or alcohol first; placing the Ce:YAG crystal on a white stone or a pure YAG crystal substrate in a hearth; raising the temperature; annealing at a constant temperature; reducing the temperature to room temperature; and taking the Ce:YAG crystal out of the hearth. The annealing method can effectively eliminate the carbon-related defect in the crystal and improve the permeability of the crystal; and Ce<2+> ions formed in the growth process in the crystal are oxidized, thus the concentration of Ce<3+> ions needs to be increased and Ce<4+> ions are inhibited as much as possible at the same time to avoid quenching effect caused by the Ce<4+> ions so that the luminous intensity of the Ce:YAG crystal is improved to the utmost extent.