The invention relates to a method for growing a
bismuth-doped
rare earth iron garnet BRIG
crystal by adopting a guided-mode pulling-top
seed crystal method and application of the
bismuth-doped
rare earth iron garnet BRIG
crystal. The invention aims to solve the problems of large
internal stress, many defects and difficulty in preparation of a single-
crystal thick film in BRIG
crystal growth by a
liquid phase epitaxy method at present; in order to solve the problems of long
growth cycle, difficult
seed crystal acquisition and the like of a top
seed crystal method in the prior art, the invention combines the rapid growth of crystals by a guided mode pulling method and the high-quality
single crystal growth by the top seed crystal method, and the guided mode pulling-top seed crystal method is invented to realize the rapid growth of the high-quality BRIG
single crystal. The method comprises the following steps: firstly, rapidly growing a large-size rare-earth-doped iron garnet crystal which is high in BRIG crystal lattice
adaptation degree and relatively close to BRIG in components by adopting a guided-mode pulling method,
cutting the large-size rare-earth-doped iron garnet crystal into seed crystals of more than
centimeter level, and rapidly growing a high-quality BRIG blocky
single crystal by adopting a TSSG method. The crystal grown by the method has the advantages of small
internal stress, less
cracking, good uniformity, fast
crystal growth and the like, and has obvious advantages in high-performance
magneto-optical isolators.