The invention relates to a
raw material synthesizing method for growing
terbium gallium garnet
crystal by a pulling method, which comprises the following steps: a. dissolving Ga2O3 into
nitric acid solution to obtain
gallium nitrate solution; b. dissolving Tb4O7 into the
nitric acid solution to obtain
terbium nitrate solution; c. fully mixing the two solutions according to the
molar ratio of Ga:Tb=3:5 to obtain a mixing solution A; d. preparing
ammonia solution with certain concentration of 2.5 mol / L; e. adding the mixing solution A and the
ammonia solution dropwise into a bigger container, and keeping the pH value of the solution between 9 and 11 till the solution is completely deposited; d. keeping the sediments static for a certain period of time and then sequentially washing, filtering and depositing; e.
drying and pressing the deposited
terbium gallium garnet precursor; and f.
sintering the pressed terbium gallium garnet at high temperature for a proper period of time. A terbium gallium garnet
raw material can be used for growing a
single crystal by a pulling method, the obtained
crystal has high quality and no obvious
cracking, scattering, stripes and black spots, and the
processing finished product rate of the terbium gallium garnet
crystal is high.