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Ytterbium and erbium-doped yttrium scandium gallium garnet crystal and preparation method thereof

A technology of gallium garnet and crystal, applied in the field of laser crystal and its preparation, can solve the problem that 940nm diode pumping cannot be applied, and achieve the effect of improving laser output efficiency

Active Publication Date: 2012-08-01
北京雷生强式科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0032] From the above laser performance test results of Comparative Example 1-2, it can be seen that Er:YSGG crystal has no laser output under the condition of 940nm diode pumping, and cannot be applied to 940nm diode pumping.

Method used

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  • Ytterbium and erbium-doped yttrium scandium gallium garnet crystal and preparation method thereof
  • Ytterbium and erbium-doped yttrium scandium gallium garnet crystal and preparation method thereof
  • Ytterbium and erbium-doped yttrium scandium gallium garnet crystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Preparation of crystal puller

[0058] Each oxide raw material Er 2 o 3 , Yb 2 o 3 , Y 2 o 3 、Sc 2 o 3 and Ga 2 o 3 Dehumidification, then according to the chemical formula Yb a Er b Y 3-a-b sc 2 Ga 3 o 12 Proportioning is calculated and weighed, wherein, a=0.15, b=0.9, and the total weight of raw materials is 2400g. The purity of each oxide is 5N-6N. Put each oxide raw material into a container, mix them evenly, put them into a latex bag, and statically press them into a hydraulic press. The pressed raw materials are loaded into a high-temperature furnace for polycrystalline material synthesis.

[0059] Preparation of Yb:Er:YSGG crystals (a=0.15, b=0.9)

[0060] Put the crystal pulling material into the crucible in the crystal growth furnace, the size of the crucible is ф90×90mm, and place 10g of desiccant P near the inner wall of the furnace 2 o 5 Then close the oven door.

[0061] Vacuum until the pressure in the furnace is not greater than 5×10 ...

Embodiment 2

[0071] Preparation of crystal puller

[0072] Each oxide raw material Er 2 o 3 , Yb 2 o3 , Y 2 o 3 、Sc 2 o 3 and Ga 2 o 3 Dehumidification, then according to the chemical formula Yb a Er b Y 3-a-b sc 2 Ga 3 o 12 Proportioning is calculated and weighed, wherein, a=0.3, b=0.9, and the total weight of raw materials is 2400g. The purity of each oxide is 5N-6N. Put each oxide raw material into a container, mix them evenly, put them into a latex bag, and statically press them into a hydraulic press. The pressed raw materials are loaded into a high-temperature furnace for polycrystalline material synthesis.

[0073] Preparation of Yb:Er:YSGG crystals (a=0.3, b=0.9)

[0074] Put the crystal pulling material into the crucible in the crystal growth furnace, the size of the crucible is ф90×90mm, and place 20g of desiccant P near the inner wall of the furnace 2 o 5 Then close the oven door.

[0075] Vacuum until the pressure in the furnace is not greater than 5×10 -2 ...

Embodiment 3

[0085] Preparation of crystal puller

[0086] Each oxide raw material Er 2 o 3 , Yb 2 o 3 , Y 2 o 3 、Sc 2 o 3 and Ga 2 o 3 Dehumidification, then according to the chemical formula Yb a Er b Y 3-a-b sc 2 Ga 3 o 12 Proportioning is calculated and weighed, wherein, a=0.6, b=0.9, and the total weight of raw materials is 2400g. The purity of each oxide is 5N-6N. Put each oxide raw material into a container, mix them evenly, put them into a latex bag, and statically press them into a hydraulic press. The pressed raw materials are loaded into a high-temperature furnace for polycrystalline material synthesis.

[0087] Preparation of Yb:Er:YSGG crystals (a=0.6, b=0.9)

[0088] Put the crystal pulling material into the crucible in the crystal growth furnace, the size of the crucible is ф90×90mm, and place 5g of desiccant P near the inner wall of the furnace 2 o 5 Then close the oven door.

[0089] Vacuum until the pressure in the furnace is not greater than 5×10 -2...

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Abstract

The invention discloses an ytterbium and erbium-doped yttrium scandium gallium garnet crystal. The crystal has the chemical composition of YbaErbY3-a-bSc2Ga3O12, wherein a is greater than 0 and is less than or equal to 2; and b is equal to 0.9. The invention also discloses a preparation method of the ytterbium and erbium-doped yttrium scandium gallium garnet crystal. Through the ytterbium and erbium-doped yttrium scandium gallium garnet crystal obtained by the invention, high-efficiency dioxide pumping laser output can be realized.

Description

technical field [0001] The invention relates to a laser crystal and a preparation method thereof, in particular to a yttrium scandium gallium garnet crystal doped with ytterbium and erbium and a preparation method thereof. Background technique [0002] Diode pumping has obvious advantages over traditional flash lamp pumping, mainly for high efficiency, good beam quality, long life, good stability, small size, light weight, etc. Therefore, diode pumping has become the preferred choice for solid-state laser technology and applications. One of the mainstream development trends. [0003] The Er:YSGG crystal with a doping concentration of 30at% can emit 2.8 μm laser, and has important applications in laser medical (such as dentistry, etc.) and military (such as photoelectric countermeasures) and other fields. Although there are many absorption bands of Er ions in Er: YSGG crystals (such as figure 1 shown), but the bandwidth is relatively narrow. The current commercialized diod...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B15/00
Inventor 韩剑锋李洪峰杨国利张月娟夏士兴李兴旺莫小刚朱建慧
Owner 北京雷生强式科技有限责任公司
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