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Preparation method of yttrium aluminum garnet crystal film doped with metal ions

A technology of yttrium aluminum garnet and metal ions, which is applied in the field of preparation of yttrium aluminum garnet crystal thin films, can solve the problems of complex process, poor uniformity and compatibility, low conversion efficiency, etc., and achieves cost reduction, huge market application prospect, simple craftsmanship

Inactive Publication Date: 2012-03-28
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the laser equipment used in the pulsed laser deposition method is expensive and has low conversion efficiency, which is not suitable for large-scale industrial production.
[0004] D.Ravichandr et al. (D.Ravichandran, et al., Fabrication of Y 3 Al 5 o 12 : Eu thin films and powders for field emission display applications, Journal of Luminescence, 71: 291-297, 1997) prepared Eu thin films and powders by sol-gel spin coating 3+ : YAG film, J.Y.Choe et al. (J.Y.Choe, et al., Alkoxy sol-gel derived Y 3-x Al 5 o 12 :Tb x thin films as efficient cathodoluminescent phosphors, Appl. Phys. Lett., 78(24): 3800-3802, 2001) Tb:YAG films were prepared by spin-coating by sol-gel method. These YAG-based films are mainly used in cathode ray tubes and field Phosphoric light-emitting materials in the emission device, the sol-gel method belongs to the wet chemical method, the process is complicated, and the uniformity and compatibility are poor

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  • Preparation method of yttrium aluminum garnet crystal film doped with metal ions
  • Preparation method of yttrium aluminum garnet crystal film doped with metal ions
  • Preparation method of yttrium aluminum garnet crystal film doped with metal ions

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Experimental program
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Effect test

Embodiment 1

[0039] The specific process of Nd-doped yttrium aluminum garnet (Nd:YAG) crystal thin film is as follows:

[0040] (1) Select high-purity Y 2 o 3 , Al 2 o 3 ,Nd 2 o 3 Material, Nd-doped yttrium aluminum garnet (Nd:Y 3 Al 5 o 12 ) powder, the doping concentration of Nd ions is 2at%, and the neodymium-doped yttrium aluminum garnet powder is pressed into a green body for electron beam evaporation deposition coating;

[0041] (2) Place the neodymium-doped yttrium aluminum garnet body in the crucible of the electron beam evaporation deposition device. The substrate material is a single-sided polished, (100)-oriented P-type single crystal Si wafer. Before preparation, use acetone, ethanol and Perform ultrasonic cleaning on the substrate with deionized water, place the cleaned substrate on the workpiece rack directly above the crucible, and adjust the distance between the substrate and the crucible to be 55 cm;

[0042] (3) Evacuate the vacuum chamber of the electron beam ev...

Embodiment 2

[0049] The formula and process flow are the same as those in Example 1, except that the annealing treatment in step (6) is annealing treatment at 900° C. for 1 hour.

[0050] The XRD spectrum of the neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal film prepared in embodiment 2 is shown in Figure 5 ,From Figure 5 It can be seen that the crystal phase of the thin film is pure YAG phase, and the Nd 3+ Into the YAG lattice, no impurity phase appears.

Embodiment 3

[0052] The recipe and process flow are the same as those in Example 1, except that the used substrate is Nd:YAG single crystal. The Nd-doped yttrium aluminum garnet (Nd:YAG) crystal film is also prepared, and because the film and the substrate are homogeneous materials, the influence of lattice mismatch is reduced, and the film surface is smoother.

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Abstract

The invention discloses a preparation method of yttrium aluminum garnet crystal film doped with metal ions. The preparation method comprises the following steps: pressing raw material powders of yttrium aluminum garnets doped with metal ions into a green body used for a deposition coating film according to proportion, adopting electron beam evaporation-deposition process, focusing and injecting electron beams generated by an electron gun into the green body, controlling the electron beams to automatically scan and uniformly heat the pre-melted green body, primarily sintering the green body for crystallizing so as to obtain porcelain, then increasing the power of the electron gun so as to further heat the green body, thus melting, evaporating and depositing the green body on a lining substrate so as to form a film, then annealing the film under vacuum or protection atmosphere, and finally obtaining the yttrium aluminum garnet crystal film doped with metal ions, which is crystallized effectively. The method can realize the high-quality, low-cost and large-area batch production of the yttrium aluminum garnet crystal film doped with metal ions, the prepared yttrium aluminum garnet crystal film doped with metal ions can be used as novel light wave guide materials, laser work medium and functional film materials.

Description

technical field [0001] The invention belongs to the technical field of functional materials and lasers, and in particular relates to a preparation method of metal ion doped yttrium aluminum garnet crystal film. Background technique [0002] Yttrium aluminum garnet (Y 3 Al 5 o 12 , referred to as YAG) belongs to the cubic crystal system, and each unit cell has 8 Y 3 Al 5 o 12 Numerator, a total of 24 Y 3+ ion, 40 Al 3+ ion, 96 O -2 Composed of 160 ions in total, it has excellent physical, chemical, mechanical and optical properties. It is an important inorganic non-metallic functional material and a high-quality solid-state laser matrix material. Doping of YAG with metal ions, such as Nd-doped YAG (Nd 3+ :Y 3 Al 5 o 12 ) is currently the best comprehensive performance, the most widely used laser working material. [0003] YAG-based solid-state laser working materials mainly include different solid forms such as crystals, powders and transparent ceramics, but crys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B23/02
Inventor 任豪曾群刘颂豪张庆茂
Owner SOUTH CHINA NORMAL UNIVERSITY
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