This invention relates to the field of organic functional
crystal growth technology, specifically a method for growing organic crystals based on the control of the included angle of the inner wall of a
crucible. The method employs a
quartz crucible with an axisymmetric conical inner cavity, and controls the included angle β of the inner wall of the
crucible to be 10°–30°, preferably 15°–20°. After loading the
organic crystal raw material into the crucible, a vacuum of 1×10⁻⁶ is applied. ‑2 After being sealed by
welding, and after passing the pre-growth inspection and sealing, the melt is placed in a Bridgman
crystal growth furnace for heating and melting and held at that temperature for 24 hours. The axial
temperature gradient is controlled, and the melt is directionally solidified and grown from bottom to top at a rate of 1-1.5 mm / h. The organic
single crystal is then slowly cooled to obtain the organic
single crystal. This invention optimizes the melt flow field and
solid-
liquid interface by adjusting the crucible angle, reduces the radial
temperature gradient, reduces defects such as
crystal cracks and dislocations, and improves crystal integrity and optical uniformity. The process is simple, has good
repeatability, and is suitable for large-size, high-quality growth of organic
scintillation crystals and organic optoelectronic crystals.