203results about How to "Reduce thickness difference" patented technology

A compact low-cost imaging lens unit for a solid-state image sensor which corrects various aberrations adequately and produces a high-resolution high-definition image. The components of the unit are arranged from an object side to an image side in the following order: an aperture stop, a first lens with positive refractive power having a convex surface facing the object side, a second lens with negative refractive power having a convex surface facing the object side near an optical axis, a third lens with negative refractive power having a convex surface facing the object side near the optical axis, a fourth lens as a meniscus lens with positive refractive power having a convex surface facing the image side near the optical axis; and a fifth lens with negative refractive power having a concave surface facing the image side near the optical axis.

An organic electroluminescent display includes a substrate having an array portion with pixels, and a pad portion coupled to an external power supply. A semiconductor structure is formed on the substrate with a source electrode, a drain electrode and a pad. A passivation layer is formed on the semiconductor structure with via holes exposing regions of the source and the drain electrodes at the array portion and the pad at the pad portion. Portions of the passivation layer contacting the via holes between the array portion and the pad portion have the same thickness. A conductive layer fills the via holes. A pixel defining layer is formed over the entire surface of a flattening layer and the conductive layer with pixel regions exposing regions of the conductive layer at the array portion. An organic electroluminescent film is formed at each pixel region.

The invention discloses an organic electroluminescence (EL)display unit and an electronic device comprising the same. The organic EL display unit includes: an organic layer provided on a substrate; a plurality of pixels arranged in a display region on the substrate; and a dividing wall provided on the substrate and separates adjacent pixels out of the plurality of pixels. The dividing wall is composed of a laminated structure having two or more types of inorganic material films with different wet characteristics. The organic electroluminescence display unit in the invention can improve quality of displayed image while realizing low cost.

The invention discloses a method for precisely controlling thinning of a wafer. The method for precisely controlling thinning of the wafer includes that a step of etching of a silicon wafer groove is added in a chip machining process, fillers are arranged in the groove, after the machining process of a front-side chip of a wafer is completed, the back side of the silicon wafer is thinned to the bottom of the groove, and precision control of wafer thinning is achieved. The method for precisely controlling thinning of the wafer can precisely control the thinning of the wafer, differences of thickness among wafers are reduced, and influence of the thickness of a blue film on thinning precision is prevented.

A method of adjusting the relative thickness of an electrode assembly (10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and includes at least one electrode having a lower surface that may have defined by at least one sacrificial protective plate (100). The electrode has a nonuniform thickness resulting from a plasma processing operation performed in the reactor chamber. The method includes a step of forming a plasma (120) designed to selectively etch the at least one electrode at the lower surface, followed by a step of etching the electrode with the aid of the plasma to reduce the nonuniformity in thickness (T(X,Z)) of the at least one electrode. The thickness of the electrode may be measured in situ using an acoustic transducer (210) during the processing of workpieces as well as during the restorative plasma etching of the electrode.

A tiled detector assembly (1000) and a method for making a tiled radiation detector (1000) is described. The innovative feature of this method is that the xyz misalignment of the detector tiles (304, 304′), the origin of various image artifacts, can be significantly reduced by accurate sizing and alignment of the detector tiles (304, 304′). Consequently, image quality, yield and reliability of as-produced tiled radiation detectors are considerably improved.

An embodiment of the invention provides an evaporation source, an evaporation device and an evaporation method, relates to the field of vacuum evaporation coating and can solve the problem of non-uniform evaporation coating thickness at different evaporation areas of a to-be-evaporated substrate in the process of evaporation due to existing linear or planar evaporation sources. The evaporation device comprises an evaporation crucible and multiple evaporation nozzles arranged on the outlet side of the evaporation crucible in one row at least. An evaporation material cavity is formed inside the evaporation crucible, and the side wall on the outlet side of the evaporation crucible is provided with a through cavity communicated with the evaporation material cavity; each evaporation nozzle comprises a sprayer and a moving portion fixedly connected with the sprayer, each sprayer is communicated with the evaporation material cavity through the through cavity, and each moving portion is arranged in the through cavity and can rotate in the same to enable the corresponding sprayer to be driven by the moving portion to swing.

The invention provides a method for producing a liquid crystal display, which comprises the following steps that a first baseplate and a second baseplate are arranged, wherein the first and second baseplates are oppositely arranged; a mixed solution is filled between the first and second baseplates, and comprises a plurality of liquid crystal molecules and a plurality of monomers; and the mixed solution is subjected to an ultraviolet irradiation technology, the monomers are polymerized to form a first alignment control layer on the surface of the first baseplate, which faces the liquid crystal molecules, and a second alignment control layer on the surface of the second baseplate, which faces the liquid crystal molecules, wherein the ratio of the thickness of the first alignment control layer to the thickness of the second alignment control layer is (1:2)-(2:1). According to the method, double-sided ultraviolet irradiation is carried out simultaneously, or the first and second baseplates are alternatively irradiated for reducing the thickness difference of the alignment control layers on the two baseplates, the bright spot problem of the local domain of a liquid crystal display panel can be solved, and further, the process yield is improved.

The invention discloses an LED display module and a manufacturing method thereof, and an LED display screen and a manufacturing method thereof. The LED display module comprises a PCB (Printed CircuitBoard), a plurality of LED chips which are positioned on a first surface of the PCB and are electrically connected with the PCB, a packaging layer which is located on the first surface of the PCB andcovers each LED chip, and a panel which is located on a surface of the packaging layer, wherein the surface, close to the panel, of the packaging layer is a polished surface. The LED display module isadvantaged in that the surface of the packaging layer is planarized, so the thickness difference of the LED display module is reduced, the panel is arranged on the surface of the LED module, surfaceappearance consistency of the LED module is improved, and the display effect is improved.

The present invention relates to an electrospinning device for fabricating a membrane, in particular, to an electrospinning device for fabricating membrane by using spinnerets aligned in machine direction (MD) and transverse direction (TD) in a high-voltage DC electric field, and to method for using the same. In addition to producing a single-layer nanofiber membrane from a polymer composite, the electrospinning device according to the present invention can also conveniently produce a multilayer composite nanofiber membrane from more than one polymer composites. The electrospinning device comprises a control section, an electrospinning section and an ancillary section. The electrospinning section comprises a MD spinnerets set and a TD spinnerets set that are alternately arranged and moves above a membrane collecting device in a to-and-fro scanning manner so as to improve the evenness and strength of the obtained membrane. The high-voltage DC electric field is applied between the MD and TD spinnerets sets and a stainless steel conveyer belt for collecting the membrane. A polymer solution supplied to the MD and TD spinnerets sets is split into nanoflows under the action of the electric field, accumulated on the stainless steel conveyer belt to form a membrane and carried to a collecting roller to be collected.

A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/or a sidewall of the conductive layer pattern, with damage cured therein by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased.

The invention discloses a method and a device for uniform magnetron sputtering deposition on the inner surface of an axisymmetric curved member, and aims to solve the problem that energy is lost due to gravity and collision between deposition atoms and working gas during the preparation of a clad layer on the inner surface of the axisymmetric curved member according to the conventional magnetron sputtering method, so that the longer the distance from the member to a target surface is, the less deposition atoms can reach the target surface and the lower the deposition rate of the clad layer is, the thickness of the clad layer on the workpiece inner surface (member inner surface) at different latitudes is larger, and the uniformity of the clad layer is poor. The method and the device can effectively overcome defects of traditional methods, and the thickness uniformity of the clad layer on the inner surface of the axisymmetric curved member can be improved to 70% or above, so that the uniform magnetron sputtering clad layer can be formed on the workpiece inner surface. Meanwhile, the method is simple, the process is controllable, the repeatability is good, and the requirements on industrialized and large-scale preparation of uniform clad layers on inner surfaces of axisymmetric curved members can be met.

In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.

The invention provides an MOS device, a manufacturing method of the MOS device and a manufacturing method of two kinds of CMOS devices. The manufacturing method of the MOS device comprises the step of providing a substrate comprising a polysilicon gate, the step of sequentially forming a middle layer, an isolation layer and a first interlayer dielectric layer on the substrate and the polysilicon gate, the step of enabling the upper surface of the first interlayer dielectric layer to be flush with the upper surface of the isolation layer, the step of removing the isolation layer on the polysilicon gate, the middle layer above the polysilicon gate and the polysilicon gate to form a groove, the step of forming a metal grid in the groove, the step of carrying out the planarization processing to enable the upper surface of the metal grid, the upper surface of the first interlayer dielectric layer, the upper surface of the isolation layer and the upper surface of the middle layer to be flush with one another, the step of removing the middle layer on the side wall of the metal grid to form a gap and the step of forming second interlayer dielectric layers on the upper surface of the first interlayer dielectric layer, the upper surface of the isolation layer, the upper surface of the gap and the upper surface of the metal grid. The thickness of the metal grid can be accurately controlled, stray capacitance can be reduced, and the performance of the device can be improved.

The invention belongs to the technical field of preparation of monocrystal diamonds, and particularly relates to a method for inhibiting polycrystallizing of ridges of a monocrystal diamond. The method for inhibiting the polycrystallizing of the ridges of the monocrystal diamond comprises the following steps of (1) preparation and selection of a substrate: slicing the monocrystal to obtain a plurality of substrates, wherein each substrate is oriented as shown in (100), and the thickness is 300 to 350mum; (2) pretreatment of the substrate: sequentially performing acid treatment, acetone and alkaline ultrasonic cleaning on the substrates in step (1), and selecting one surface with higher quality and no impurity defect as the growth surface; (3) growth of crystals. The method has the advantages that by strictly controlling the ratio of flow rate of gas in each step and the power/pressure ratio in the preparation process, the corresponding parameter ratio is designed according to each growth stage; by matching with the strict temperature control, the deposition quality of the monocrystal diamond is finally improved.

The invention relates ceramic forming slurry which comprises the following components in percentage by mass: 76%-80% of a raw material and 20%-24% of water. The raw material comprises the following components in percentage by weight: 30%-50% of high-aluminum low-shrink low-thermal-expansion calcined kaolin, 10%-20% of ceramic powder, 10%-20% of quartz sand, 20%-40% of ball clay and 0.3%-0.39% of water glass, wherein the molar ratio of the water glass is 1.5-3.5. The thickening degree of the slurry is increased from 50-80 degrees to 70-100 degrees by adding 0.3%-0.39% of water glass, and meanwhile, the viscosity of the slurry is also improved, so that the bonding property among blank bodies is greatly improved, a layering phenomenon, which is likely to happen (for example F-611), at double-sided pulp sucking parts in the prior art is substantially avoided, and the green blank rejection rate is reduced by about 3%; in addition, the permeability is improved, the grouting time is shortened, and the production efficiency is increased.

The invention relates to an electroplating apparatus, which is provided for electroplating a substrate comprising a plurality of areas requiring electroplating, wherein the areas requiring electroplating are electrically insulated. The electroplating apparatus comprises an electroplating bath, a cathode fixation structure, a plurality of anodes and a voltage controller. The cathode fixation structure comprises an installation frame and a plurality of electrical conductivity fixation components. The electrical conductivity fixation components are provided for installing the substrate on the installation frame, and conducting current to the substrate. Each electroplating-required area of the substrate is provided with at least an electrical conductivity fixation component. Each anode is corresponding to an electroplating-required area of the substrate arranged on the installation frame. The voltage controller forms electrical connections with a plurality of the anodes and a plurality of the electrical conductivity fixation components. The voltage controller is provided for controlling the electrifying status of each anode and at least an electrical conductivity fixation component arranged on the electroplating-required area corresponding to the anode so as to control the voltage between each anode and the electroplating-required area corresponding to the anode. The technical scheme further provides an electroplating method for using the electroplating apparatus.