359 results about "Wafer thinning" patented technology

The invention discloses a large-size wafer thinning and polishing device and method based on a dynamic line beam, and the device comprises a dynamic beam generation module, a rotary bearing module and a closed-loop control module, and the dynamic beam generation module comprises a laser, a polaroid, a line beam shaping assembly, a reflector, a hollow conical lens and a lifting module. The linear beam shaping assembly is used for shaping a laser beam into a line-shaped linear beam, the hollow conical lens is a hollow conical lens with an open end face and is used for shaping the line-shaped linear beam into an arc-shaped linear beam, and the hollow conical lens is installed on the lifting module to generate a dynamic arc-shaped linear beam; the rotary bearing module is used for fixing and driving a wafer to rotate; and the closed-loop control module is used for controlling the lifting of the lifting module and the movement of the rotary bearing module. The polishing speed can be greatly increased, the polishing uniformity and the polishing quality are also improved, a plurality of wafers can be thinned and polished at the same time, and the polishing device can adapt to wafers of different sizes and shapes.

The invention provides a wafer thinning equipment control method and device, electronic equipment and a storage medium, and relates to the technical field of wafer thinning. The method comprises the following steps: monitoring spreading and thinning behaviors of a spin-coating liquid film in real time and generating a residual layer distribution diagram; according to an area indicated by the residual layer distribution map, obtaining local thickness information by analyzing a fluorescence signal received from the area; after a laser beam is used for scanning the surface of the wafer, micro-vibration signals are recognized and extracted by analyzing reflected light signals; dividing the surface of the wafer into a plurality of grid areas; and the risk of generating cracks in each grid area is evaluated, and a wafer surface risk thermodynamic diagram used for controlling the grinding head and the grinding fluid is generated. The method aims at solving a series of problems caused by a microcosmic residual layer on the surface of the wafer or surface energy difference in the wafer thinning process, early and accurate sensing of microcosmic abnormity on the surface of the wafer is achieved, and a control system is guided to conduct regional and self-adaptive grinding parameter adjustment.

The utility model relates to the technical field of wafer processing, in particular to a wafer carrying mechanism and wafer thinning equipment, the wafer carrying mechanism comprises a base, a clamping assembly and an adsorption assembly, the clamping assembly is arranged on the base, at least two power output ends of the clamping assembly can be close to each other to clamp a wafer, and the adsorption assembly is arranged on the base. Or can be far away from each other to release the wafer; the adsorption end of the adsorption assembly can adsorb a wafer, and in the vertical direction, the adsorption end of the adsorption assembly and the power output end of the clamping assembly are located on the two sides of the base respectively. By means of the arrangement, the wafer carrying mechanism has the clamping function and the adsorption function at the same time, the occupied space is small, the wafer carrying mechanism can be conveniently installed in wafer thinning equipment which is more compact in structural layout, and miniaturization of the wafer thinning equipment can be achieved easily.

The invention discloses a wafer thinning and grinding control method and system, computing equipment and a storage medium, the wafer thinning and grinding control method is executed in the computing equipment, and the method comprises the steps that feature extraction is conducted on a sensor signal from a sensor assembly, and multiple feature parameters are obtained; the characteristic parameters are input into a grinding state prediction model to be processed, and state parameters indicating the grinding state are obtained; according to the state parameters, whether the current technological parameters of the thinning lathe need to be optimized or not is judged; if yes, technological parameters for optimization are determined according to the current grinding state, and the technological parameters comprise the grinding wheel rotating speed, the grinding wheel feeding speed and the rotating speed of a rotary table of the thinning machine tool; and controlling the thinning lathe to process the wafer workpiece based on the optimized process parameters. According to the method, the processing efficiency and the processing quality of the wafer workpiece are improved.

The utility model provides an adsorption device for wafer processing, a wafer grinding device and wafer thinning equipment. The adsorption device comprises an adsorption plate, a suction cup, a through-flow shaft with an axial through hole and a mounting seat, and the adsorption plate is arranged in a containing cavity of the suction cup; the through-flow shaft passes through the binding surface between the mounting seat and the suction cup and extends into the suction cup, so as to avoid the binding surface between the suction cup and the mounting seat to suck fluid from the suction cup for wafer adsorption or input fluid into the suction cup for wafer release; the suction cup is provided with a fluid channel in fluid communication with the containing cavity, and the axial through hole is in fluid communication with the adsorption plate through the fluid channel. According to the technical scheme, the fluid path for vacuum adsorption or release of the wafer avoids the binding face between the suction cup and the mounting base, small particles are prevented from entering the binding face along with the fluid, the clean and tight binding state between the suction cup and the mounting base is guaranteed, the wafer grinding accuracy is guaranteed, and the wafer grinding quality is improved.

The invention belongs to the technical field of semiconductor processing, and particularly discloses a processing auxiliary device for thinning a wafer, which comprises a base body and at least one limiting piece, the limiting piece is connected with the end part of the base body, the limiting piece is provided with a mounting hole, the mounting hole is used for mounting and placing the wafer, and the limiting piece is arranged on the base body. The wafer is detachably connected with one end of the base body, and the height difference between the limiting piece and the end portion of the base body is smaller than the height difference between the wafer to be machined and the end portion of the base body. According to the invention, the wafer breaking or bending phenomenon can be reduced while the wafer thinning quality is ensured.

The invention relates to the technical field of semiconductor manufacturing, and provides wafer thinning equipment and a wafer thinning process. The wafer thinning equipment comprises a plurality of grinding discs, a functional assembly and a slicking assembly; two functional assemblies are correspondingly arranged on the grinding face of each grinding disc, and two grinding areas are formed between the two functional assemblies. The functional assembly is used for cleaning the grinding area and spraying grinding fluid; the slicking assembly penetrates through the grinding areas of the multiple grinding discs and is used for dispersing grinding fluid. The functional assembly is arranged corresponding to the grinding disc, the grinding fluid in the grinding area of the grinding disc can be cleaned, and the grinding fluid is sprayed again, so that wafer grinding particles can be cleaned, and the purity of the grinding fluid is ensured; and meanwhile, by arranging the slicking assembly, the grinding fluid can be uniformly dispersed before the grinding fluid is in contact with the wafer, so that local aggregation of the grinding fluid is avoided, the stress concentration problem is prevented, the wafer cannot be scratched, and the grinding precision is guaranteed.

The invention provides wafer thinning and polishing equipment, and belongs to the technical field of semiconductor processing. The round suction cup is arranged under the grinding disc, and a strip-shaped groove penetrating through the peripheral side of the round suction cup is formed in the top of the round suction cup in the radial direction; the lifting plate is vertically and movably arranged at the outward end of the strip-shaped groove at intervals, and a first U-shaped plate is arranged at the top of the lifting plate; the temporary storage frame comprises a first vertical frame and a pair of arc-shaped baffles matched with the peripheral side of the wafer in shape, multiple pairs of supporting strips are arranged in the first vertical frame in the vertical direction in an array mode, and the first vertical frame is arranged in the first U-shaped plate; and the first pushing mechanism is arranged on the side, away from the circular suction cup, of the first U-shaped plate, the telescopic end of the first pushing mechanism is connected with one end of the strip-shaped suction cup through a pushing block, and the strip-shaped suction cup is arranged towards the strip-shaped groove. According to the equipment, automatic feeding and discharging of wafers can be realized in wafer thinning production, and the production efficiency is improved.

A first wafer having a first portion closer to a first surface and a thicker second portion connected with the first portion and closer to the second surface opposite to the first surface is provided. A second wafer is provided to bond with the first wafer. An edge trimming process is performed to form a trench penetrating through the second wafer and extending beyond the first portion and extending into the second portion. After bonding dies to the second wafer, a filling material is formed over the dies and the first and second wafers, wrapping around and between the dies, covering the first and second wafers, and partially filling the trench. A wafer thinning process is performed to remove the second portion and partially remove the filling material in the trench to level the surface of the thinned first wafer with the surface of the thinned filling material.

The invention discloses a laser-chemical composite surface planarization process based on a laser stripping sheet. The method comprises the following steps: firstly, carrying out surface scanning on the surface of a wafer subjected to laser-ultrasonic stripping by adopting femtosecond laser, thinning the wafer to a first target thickness through an ultra-short pulse cold working mechanism, and optimizing the sharp corner fluctuation of the surface at the same time; then immersing the wafer into a hydrofluoric acid-nitric acid mixed solution containing a platinum / iridium catalyst, accurately etching the residual sharp corner by utilizing a selective catalytic reaction of a contact point of a catalyst plate and the wafer, and feeding back and adjusting processing parameters in real time through a morphology monitoring module and an infrared thermal imaging system; and finally, thinning to the required thickness by adopting chemical mechanical polishing, and obtaining an atomic-scale flat surface. According to the technology, through the synergistic effect of laser pre-thinning and chemical etching, the problems that a traditional grinding technology is low in efficiency and large in material consumption are solved, and the technology has the advantages of being efficient, low in damage, high in precision and the like and is suitable for surface treatment of hard semiconductor wafers such as silicon carbide and gallium nitride.

The invention provides a stress monitoring method and a stress monitoring device for a wafer thinning sheet, and semiconductor process equipment. In the stress monitoring method, a plurality of stress monitoring assemblies are arranged at a plurality of monitoring points of a wafer heating disc in a one-to-one correspondence manner, and resistance-type strain sensors in the plurality of stress monitoring assemblies are combined to construct a strain monitoring circuit; the method comprises the following steps: acquiring actual measurement data of electrical parameters related to each resistance-type strain sensor, and comparing the actual measurement data of the electrical parameters related to each resistance-type strain sensor with a reference value of the actual measurement data to obtain variation and variation distribution characteristics of the electrical parameters related to each resistance-type strain sensor; and judging whether the wafer thinning sheet has the problem of displacement or warping or not. The technical scheme has the advantages that the flow is simple, the semiconductor process is not influenced, the detection is accurate, corresponding adjustment measures are adopted when displacement or warping of the wafer thinning sheet is monitored, the subsequent semiconductor wafer process is facilitated, and the yield is improved.

The invention belongs to the technical field of semiconductors, and particularly relates to a preparation method of a single-crystal-on-silicon thin film product and the thin film product. The method comprises the following steps: high-temperature oxidation: feeding a support wafer into a high-temperature vertical furnace for high-temperature oxidation; fusing and bonding: fusing and bonding the device wafer and the support wafer to form a first bonded wafer; the first bonding wafer is preprocessed to obtain a second bonding wafer, the first bonding wafer is placed on a multi-point support, a force F perpendicular to the surface of the first bonding wafer is applied to the upper portion of the corresponding fulcrum, and F ranges from 0.5 N to 3 N; low-temperature annealing: carrying out low-temperature annealing on the second bonding wafer at 100-300 DEG C to obtain a third bonding wafer; and thinning treatment: carrying out thinning treatment on the third bonding wafer to obtain a single crystal film product on silicon. According to the method, the stress damage problem of the single crystal film product on the semiconductor silicon is solved, the generation probability of wafer surface defects is reduced, and the yield of the single crystal film product on the silicon is improved.

The invention relates to the technical field of semiconductor wafer processing, and particularly discloses an adhesive tape for semiconductor wafer thinning and a preparation process thereof. The adhesive tape for semiconductor wafer thinning comprises a base material layer and a bonding layer arranged on the surface of the base material layer, the base material layer is made of polyolefin, and the bonding layer is a modified acrylic acid adhesive layer; the modified acrylic acid adhesive layer is prepared from the following raw materials in parts by weight: 60 to 70 parts of 2-ethylhexyl acrylate, 15 to 25 parts of butyl acrylate, 5 to 10 parts of methyl methacrylate, 2 to 5 parts of hydroxyethyl acrylate, 0.5 to 2 parts of glycidyl methacrylate, 1 to 3 parts of a modifier, 0.8 to 1.2 parts of an isocyanate cross-linking agent, 0.3 to 0.8 part of an epoxy cross-linking agent and 0.3 to 0.8 part of azodiisobutyronitrile. According to the adhesive tape for semiconductor wafer thinning, the fixing and protecting effects on the wafer are improved.

The invention relates to the technical field of adhesive tapes, in particular to a convex ball-mounting wafer thinning adhesive tape, a preparation method thereof and a wafer thinning machine, the thinning adhesive tape comprises a base material film, a viscosity-reducing adhesive layer and a release film; the preparation method comprises the following steps: preparing a first polymer network; preparing a second polymer network; the adhesive composition is obtained; forming a liquid film; covering the base material film on a liquid film; covering a release film on the upper surface of the fixed module in the wafer thinning machine; in a wafer thinning machine, the wafer with the base material film is installed on a release film, and heating treatment is carried out on the laminated wafer so as to directly form a solidified thinning adhesive tape on the wafer; by constructing a thermal / optical dual-curing interpenetrating polymer network with a dual visbreaking mechanism and combining with a special preparation method of the thinning adhesive tape in a thinning machine, the probability that a convex ball-mounting wafer generates microcracks or warps in a specific area when the adhesive tape is used for thinning operation is reduced.

The invention discloses a heat dissipation enhanced semiconductor packaging method, which comprises the following steps of: performing deep silicon etching to form a vertical through hole; insulation and metallization are carried out; thinning the wafer; performing hybrid bonding and stacking of multiple layers of chips; a heat dissipation design is adopted to form a vertical heat dissipation path; a three-dimensional thermal through hole network: adding pure copper thermal through holes in a non-functional area; performing microfluid cooling integration; molding and packaging; and thermal performance verification: verifying that the junction temperature can be controlled within 85 DEG C through infrared thermal imaging and finite element simulation. The TSV with the depth-to-width ratio of 10: 1 can be realized by adopting the Bosch process; a three-dimensional integrated TSV array supporting HBM and other high-speed memories is embedded into diamond or graphene heat dissipation columns, a low-heat-resistance vertical heat dissipation path is formed by combining a three-dimensional pure copper heat through hole network, and local hot spots are effectively dispersed; the high-thermal-conductivity epoxy molding compound and the embedded copper block enhance the overall mechanical strength and thermal diffusivity, so that the product can dissipate heat efficiently, and the overall area is not easy to influence.

The utility model discloses a grinding device of a wafer thinning machine, which comprises a grinding wheel mechanism, and the grinding wheel mechanism comprises a grinding wheel mounting rack, a first Z-axis lifting mechanism mounted on one side of the grinding wheel mounting rack, a Z-axis lifting plate connected with the first Z-axis lifting mechanism, and a main shaft mounting seat connected to one side of the Z-axis lifting plate. The motorized spindle is mounted on the spindle mounting seat; the electric spindle is further in driving connection with a grinding wheel mounting seat, and a first grinding wheel is further mounted at the bottom of the grinding wheel mounting seat; a plurality of first grinding wheel teeth arranged in the vertical direction are arranged in the circumferential direction of the bottom of the first grinding wheel at intervals. Compared with equipment applying an air floating main shaft, a mechanical main shaft grinding mode is adopted, so that the rigidity is greatly improved, the grinding machine can adapt to grinding of high-hardness materials, and the application range is wider.

The invention relates to the technical field of wafer processing, and discloses a wafer thinning device.A Z-axis moving assembly comprises a main shaft mounting frame, and the main shaft mounting frame is arranged on an upper lathe bed support in a sliding mode through three Z-axis sliding tables matched with three Z-axis guide rails; the grinding main shaft assembly is arranged on the Z-axis moving assembly and located in the center of a triangle formed by the three Z-axis guide rails. A Z-axis driving assembly used for driving the main shaft mounting frame to move in the Z-axis direction is arranged on the upper lathe bed support. According to the invention, the Z-axis moving assembly adopts three Z-axis guide rails for positioning and guiding, so that the movement in the Z-axis direction is stable, and the grinding quality of a thinning grinding wheel on a wafer is improved; the center of the turntable is concentric with the center of the lead screw, deflection influence is reduced, grinding is uniform, and rigidity is good; and meanwhile, three-point leveling is selected for the planeness of the thinning main shaft, the planeness of the thinning main shaft can be conveniently, rapidly and efficiently adjusted, and the subsequent machining quality is guaranteed.

The invention discloses an ultrasonic vibration auxiliary electrochemical mechanical thinning method and device for a large-diameter wafer, and belongs to the technical field of large-diameter semiconductor wafer thinning, and the device comprises a grinding system, an electrochemical system and an electrolyte circulating system. The grinding system comprises a micro-feeding unit, a main shaft rotating unit and an ultrasonic vibration unit, and the main shaft rotating unit and the ultrasonic vibration unit drive the cup-shaped grinding wheel to rotate and axially vibrate. The electrochemical system takes a cup-shaped grinding wheel as a cathode and a wafer as an anode, and an electrolyte is supplied between the cathode and the anode to generate electrochemical reaction. In the thinning process, the surface of the wafer is subjected to anodic oxidation modification to generate a modification layer easy to remove, meanwhile, the generated modification layer is removed by the grinding wheel, the grinding wheel with ultrasonic vibration facilitates chip removal and heat dissipation, circulation of electrolyte can be enhanced, and then the electrochemical modification effect is improved; the annular structure of the grinding wheel has better removal uniformity under the vibration condition, and efficient, high-precision and low-damage large-diameter wafer thinning can be achieved.

The invention provides a wafer thinning device and a wafer thinning method, and relates to the technical field of wafer thinning, the wafer thinning device comprises a first electric rotary table, a second electric rotary table, a vacuum chuck seat and a bearing block, electric telescopic rods are symmetrically mounted on the bottom surface of the bearing block, and output shafts of the electric telescopic rods are fixedly connected with the first electric rotary table; a first placement box and a second placement box are arranged between the two bearing blocks, milling cutters are arranged in the first placement box in an annular array mode, grinding blocks are arranged in the second placement box in an annular array mode, adjusting columns are symmetrically arranged on the two sides of the first placement box, and clamping blocks are arranged above the adjusting columns; and positioning blocks are arranged on the surfaces of the first placement box and the second placement box. According to the invention, the milling cutter and the grinding block can move synchronously, so that the milling cutter and the grinding block can directly carry out wafer thinning work after being switched, and centering adjustment does not need to be carried out again.

The present application provides a method and apparatus for automatically adjusting the inclination angle of a polishing pad and a wafer thinning device, which relate to the field of wafer processing and manufacturing. The method includes: obtaining a first variable and a second variable that affect the thinning effect of a wafer to be thinned; inputting the first variable and the second variable into a pre-trained surface shape prediction model to obtain the predicted surface shape of the wafer to be thinned, where the predicted surface shape at least includes the thickness change of the wafer to be thinned after being thinned and processed by the wafer thinning device; if the predicted surface shape of the wafer to be thinned is inconsistent with the set target surface shape, inputting the predicted surface shape and the target surface shape of the wafer to be thinned into an inclination angle adjustment model to obtain the target inclination angle of the polishing pad; adjusting the inclination angle of the polishing pad from the initial inclination angle to the target inclination angle, and performing the thinning process of the wafer to be thinned by the wafer thinning device adjusted to the target inclination angle. This method can achieve precise automatic adjustment of the inclination angle of the polishing pad and improve the accuracy and quality of wafer thinning processing.

The invention provides a method and equipment for thinning a lithium tantalate bonded wafer, and relates to the technical field of wafer thinning, initial surface type data is detected firstly, then the inclination angle of a coarse grinding wheel is adjusted according to the positive and negative values of the initial BOW value of the initial surface type data, and then the wafer is subjected to coarse thinning. And then the rough grinding surface type data of the thinned wafer are detected again, the inclination angle of the fine grinding wheel is adjusted according to the positive and negative values of the rough grinding BOW value of the rough grinding surface type data, and then fine thinning is conducted on the wafer. Compared with the prior art, the wafer is thinned through rough thinning and fine thinning, the inclination angle of the grinding wheel can be adjusted according to the BOW value before the thinning action, the grinding wheel can be better matched with the wafer in the thinning process, on one hand, the risk of brittle fracture such as edge breakage can be reduced, a subsurface damage layer can be slowed down, and therefore the service life of the grinding wheel is prolonged; and on the other hand, the wafer can be adaptively corrected, and the problem of serious warping caused by thinning is solved. And the quality of the thinned ultrathin lithium tantalate bonded wafer can be effectively improved.

The utility model relates to the technical field of thinning and polishing mechanisms, in particular to a wafer thinning and polishing mechanism which comprises a bottom plate, supporting legs are fixedly connected to the bottom end of the bottom plate, a box body is fixedly connected to the top end of the bottom plate, a box cover is arranged at the top end of the box body, and a hydraulic cylinder penetrating through the box cover is arranged at the top end of the box cover. An adsorption block is fixedly connected to the bottom end of the hydraulic cylinder, a vent hole is formed in the bottom end of the adsorption block, a rubber ring fixedly connected to the bottom end of the adsorption block is arranged at the bottom end of the vent hole, and a hose communicated with the vent hole is fixedly connected to the top end of the adsorption block. Through arrangement of the box cover, the hydraulic cylinder, the adsorption block, the vent hole, the rubber ring, the hose and the vacuum pump, wafer breakage caused by clamping can be prevented, before use, the device is powered on, the wafer is placed at the bottom end of the adsorption block, then the vacuum pump is started, the vacuum pump pumps away air in the hose and the vent hole till the wafer and the rubber ring are tightly attached, and then the wafer is clamped. And the wafer can be firmly adsorbed at the bottom end of the adsorption block.

The invention provides a contact type measurer and wafer thinning equipment. The contact-type measurer includes: a first mounting seat configured with a mounting hole; the first measuring rod is mounted in the mounting hole and horizontally extends to the position above the bearing table, a first measuring head is arranged at the tail end of the first measuring rod, and the first measuring rod can ascend and descend in the mounting hole so that the first measuring head can make contact with the wafer and ascend and descend along with the change of the thickness of the wafer; the protective air pipe is provided with a vent groove which extends along the length of the protective air pipe and is provided with a downward opening, the protective liquid pipe is provided with a liquid groove which extends along the length of the protective liquid pipe and is provided with a downward opening, and the vent groove discharges air downwards to form an air curtain so as to prevent machining chippings from entering the mounting hole; the liquid flowing groove discharges liquid downwards to form a liquid curtain so as to prevent machining chippings penetrating through the air curtain from entering the mounting hole. According to the technical scheme, accumulation of chippings at the mounting hole can be effectively reduced, interference to movement of the measuring rod is avoided, and therefore the measuring accuracy is improved.

The invention relates to the technical field of semiconductors, and provides a manufacturing method of a semiconductor device. The manufacturing method comprises the steps that an edge area of a wafer is trimmed from a first face of the wafer to form a step, the step comprises a step face and a step side face, and the width of the step face is smaller than or equal to that of the edge area; forming a bonding layer on the first surface of the wafer and the side surface of the step so as to fix the wafer on the slide glass; wherein the step surface comprises a plurality of areas arranged along the circumferential direction of the wafer, and the contact area between a first area in the plurality of areas and the bonding layer is smaller than the contact area between a second area and the bonding layer; cutting an edge area where the first area is located from the second surface, wherein a notch extends from the second surface to the step surface; and performing a thinning process on the wafer from the second surface. According to the invention, the edge region where the first region is located is cut before the thinning process, so that the width of the step surface is reduced, the moment applied to the first region in the wafer thinning process is reduced, the risk of edge collapse is reduced, and the yield and reliability of chips are improved.

The invention belongs to the field of semiconductor processing, and particularly relates to a thinning grinding wheel for a lithium niobate wafer and a preparation method of the thinning grinding wheel. The abrasive layer comprises the following components in parts by mass: 25-45 parts of a diamond abrasive, 20-50 parts of a resin binder, 5-10 parts of a foaming agent, 2-5 parts of zinc oxide and 2-5 parts of silicon carbide; the grinding material layer is of a porous net structure, and the porosity is 20-40%. Compared with the prior art, the grinding wheel solves the problem that in the prior art, the lithium niobate wafer is prone to fragment and edge breakage in the grinding machining process, the grinding wheel is improved, when the grinding wheel is used for grinding the lithium niobate wafer, the grinding effect is good, surface parameters are stable, the defective rate of thinning of the lithium niobate wafer is reduced, and the production efficiency is improved. And the blank of the lithium niobate wafer thinning grinding wheel in China can be filled.

The invention relates to the field of semiconductors and piezoelectric materials, in particular to a method for improving bonding strength of a lithium tantalate wafer, which comprises the following steps: a) thinning, polishing and cleaning the lithium tantalate wafer; b) cleaning the substrate slice with a weakly alkaline solution and then immediately cleaning the substrate slice with a cooling water bath; c) carrying out step-by-step cooling treatment on the substrate slice and then storing at constant temperature; d) carrying out surface activation on the lithium tantalate wafer and the substrate slice by using plasma; e) aligning the lithium tantalate wafer and the substrate slice, and pressurizing and bonding to obtain a bonded slice; and f) inspecting the bonding sheet. By optimizing the lithium tantalate wafer thinning and polishing process and the substrate slice low-temperature treatment process, the problems of edge tilting and surface roughness of the lithium tantalate wafer, self defects of the substrate slice and poor bonding caused by difference of thermal expansion coefficients of a functional layer and a substrate layer during bonding are effectively solved, and high-strength, high-precision and high-stability bonding is realized.

The invention relates to the technical field of semiconductor wafer processing, and provides a grinding wheel self-sharpening enhancement method and device and wafer thinning equipment. The method comprises the following steps of: determining a main washing position: judging whether the grinding wheel is subjected to outer edge processing or not based on the position of a grinding line of a grinding wheel grinding wafer and the rotating direction of the wafer, if so, determining the main washing position to be the outer side of the grinding wheel, and otherwise, determining the main washing position to be the inner side of the grinding wheel; the liquid spraying pressure and the swing frequency of the flusher at the main flushing position are set to be larger than the liquid spraying pressure and the swing frequency of the flusher on the opposite side; determining the flushing direction of the flusher based on the adhesion state of the abrasive particles forming the abrasive wheel and the adhesion state of the pollutants on the abrasive wheel; and based on the ratio of the feeding speed of the grinding wheel to the set feeding speed in the grinding process, the liquid spraying pressure and the swing frequency of the flusher are adjusted. According to the grinding wheel, the self-sharpening performance of the grinding wheel can be effectively enhanced, meanwhile, protection is provided for the grinding teeth, and the wafer thinning quality and efficiency are improved.

The invention relates to the technical field of integrated circuit manufacturing, and provides wafer thinning equipment and a wafer thinning method. The wafer thinning equipment comprises a grinding device and an adsorption platform, the adsorption platform is used for bearing a wafer and driving the wafer to rotate, the grinding device is arranged above the adsorption platform in a lifting mode, and a grinding wheel used for grinding the wafer is arranged on the lower portion of the grinding device. The grinding wheel comprises a base material and a plurality of grinding blocks, and the grinding blocks are fixed to the base material through adhesive layers. The grinding block comprises spiral calcium carbonate containing a Si-O-Ca structure and is used for dispersing stress during grinding. According to the technical scheme, the problem that the flatness of the thinned wafer is poor in the prior art is solved.

The invention discloses a rigidity measuring device and method for a wafer thinning machine. The rigidity measuring device comprises a force application module, a displacement measuring module, a visual auxiliary module and a signal processing module. A composite structure of an arc-shaped force application plate, a piezoelectric ceramic piece and a belleville spring is adopted as a core force application unit, the piezoelectric ceramic piece loads and simulates real grinding force, and the belleville spring provides force application buffering; in the data processing process, the instantaneous rigidity value is calculated in real time, the curvature change of the acting force-displacement curve is dynamically analyzed, and when the rigidity sudden change condition is met or the curvature changes remarkably, abnormity is recognized in time, and testing is stopped. According to the invention, the problem that the rigidity of the whole machine cannot be measured in a narrow space of the thinning machine due to geometric mismatch and overlarge thickness is solved, the integrated overload protection mechanism ensures the safety, the innovative data processing method can capture rigidity mutation in real time, and the accuracy and reliability of rigidity evaluation of equipment in a stable working interval are remarkably improved.

The invention provides a grinding disc inclination angle self-adjusting method and device and wafer thinning equipment, and relates to the field of wafer processing and manufacturing. The method comprises the following steps: acquiring a first variable and a second variable which influence the thinning effect of a wafer to be thinned; the first variable and the second variable are input into a pre-trained surface shape prediction model, a predicted surface shape of the wafer to be thinned is obtained, and the predicted surface shape at least comprises the thickness change of the wafer to be thinned after being thinned by the wafer thinning equipment; if the predicted surface shape of the to-be-thinned wafer is not consistent with the set target surface shape, the predicted surface shape and the target surface shape of the to-be-thinned wafer are input into an inclination angle adjusting model, and the target inclination angle of the grinding disc is obtained; and the inclination angle of the grinding disc is adjusted from the initial inclination angle to the target inclination angle, and the wafer thinning equipment adjusted to the target inclination angle executes thinning machining of the wafer to be thinned. According to the method, the inclination angle of the grinding disc can be accurately and automatically adjusted, and the precision and quality of wafer thinning machining are improved.