23 results about "Wafer thinning" patented technology

The application discloses a kind of thinning machine slow-motion air float rotary table, belong to integrated circuit packaging technical field.It includes rotating shaft assembly, air float bearing body, upper thrust disc, lower thrust disc, mandrel and drive assembly.Rotating shaft assembly includes buffer connecting assembly and support shaft, support shaft is fixedly sleeved outside buffer connecting assembly, and upper thrust disc and lower thrust disc are respectively fixedly connected to the upper and lower ends of support shaft;Buffer connecting assembly upper end is fixedly connected with upper thrust disc, and lower end is fixedly connected with mandrel after being passed through lower thrust disc downwardly.A ring-shaped groove is formed between upper thrust disc, support shaft and lower thrust disc, air float bearing body is installed in ring-shaped groove and forms air film support between support shaft.Drive assembly is drivingly connected with mandrel, for driving mandrel rotation to drive lower thrust disc, rotating shaft assembly and upper thrust disc synchronous rotation.The application replaces traditional rigid center shaft by buffer connecting assembly, effectively compensates radial displacement, buffers vibration impact, reduces installation centering requirement, significantly improves wafer thinning processing flatness and stability.

This utility model discloses an adjustable vacuum adsorption carrier device for wafer thinning, including a carrier stage; an adsorption hole assembly, including a central adsorption hole at the center of the top surface of the carrier stage, an outer layer adsorption holes arranged in a ring around the outside of the central adsorption hole, and an outermost layer adsorption holes arranged in a ring around the outside of the outer layer adsorption holes; and an outer shielding assembly. By setting the outer shielding assembly and the outermost shielding assembly on the top of the adsorption hole assembly, when it is necessary to adsorb and fix a small wafer, the personnel can lower the outer shielding assembly and the outermost shielding assembly to cover the corresponding outer layer adsorption holes and the outermost adsorption holes. In this way, the distribution of adsorption holes can be adjusted so that open adsorption holes can be covered, thereby avoiding the problem of debris generated during the thinning process being sucked into the open adsorption holes, and providing a certain degree of protection for the entire vacuum adsorption carrier.

This invention discloses a composite-bonded superhard grinding wheel for silicon carbide wafer thinning and its preparation method. The grinding wheel comprises, by mass ratio, 20%-35% diamond abrasive, 25%-50% metal binder, 10%-20% resin, 10%-15% pore-forming agent, and 3%-10% filler. The diamond abrasive has a particle size of 2000#-5000#. The preparation method includes S1, preparing porous diamond; S2, preparing porous diamond abrasive; S3, preparing grinding wheel raw material; and S4, preparing the grinding wheel. This invention ensures grinding efficiency and surface quality during silicon carbide wafer grinding, solving the problem of difficulty in balancing wafer damage and grinding efficiency. Compared with existing products, it guarantees wafer processing quality and improves wafer processing efficiency.

The application discloses a thin wafer manual peeling jig, which comprises a handle, and a storage tray is fixed at one end of the handle; and a detachable multi-hole slide is arranged on the storage tray. The application further discloses a method for peeling using the thin wafer manual peeling jig, which comprises the following steps: firstly, fixing the multi-hole slide and the thin wafer on the storage tray; secondly, placing the peeling jig with the fixed thin wafer into a peeling liquid for ultrasonic peeling, and further soaking, cleaning and water removing to obtain a peeled wafer; and finally, checking the peeled wafer through a microscope. The thin wafer manual peeling jig has the advantages of simple structure, convenient disassembly and assembly, compatibility with thin wafers of different sizes and regular or irregular shapes, and the ability to guarantee a better peeling effect without wafer breakage.

The present application relates to the technical field of semiconductor manufacturing equipment and intelligent control, in particular to a kind of wafer thinning machine with intelligent control system and method, the system and method are through multi-dimensional process and physical characteristic field data high frequency synchronous acquisition and space-time coordinate alignment, construct the multiscale digital twin containing damage generation and electrical performance degradation submodel, with electrical performance uniformity as core to build multi-objective cost function, using improved particle swarm optimization algorithm to solve optimal process parameter adjustment and active stress offset signal, by collaborative control and closed-loop feedback realizes model continuous evolution.The system and method improve the precision control ability of wafer thinning process, guarantee electrical performance uniformity and processing quality.

This invention discloses a wafer thinning apparatus and its multi-station polishing method, specifically relating to the field of wafer thinning. The apparatus includes a worktable with a rough grinding station, a fine grinding station, and a loading / unloading station. An indexer is installed inside the worktable, and multiple wafer carriers are mounted at the output end of the indexer. The indexer drives the wafer carriers to move between the rough grinding station, the fine grinding station, and the loading / unloading station. Each wafer carrier includes a mounting frame, and a suction cup is mounted above the mounting frame to pick up and support the wafer. This invention employs a method where the wafer carrier and the TGV glass substrate move synchronously during unloading, ensuring that the suction cup is always directly below the TGV glass substrate. This prevents water droplets remaining on the surface of the TGV glass substrate during polishing from falling onto the suction cup surface, thus preventing fine particles from the suction cup from affecting the placement accuracy of the TGV glass substrate and ensuring uniform thickness of the polished TGV glass substrate.

The application discloses a grinding waste collecting device and a wafer thinning equipment, the device is installed on the base of the wafer thinning equipment and is used for collecting the waste produced by wafer grinding; the grinding waste collecting device comprises an upper filter tank and a lower filter tank, the upper filter tank is located above the lower filter tank, the lower filter tank is communicated with a collecting and discharging module located below the lower filter tank, and waste liquid is discharged from the collecting and discharging module through the upper filter tank and the lower filter tank; and the grinding waste collecting device is connected with a driving mechanism.

The utility model discloses a kind of wafer thinning patch devices of anti-splitting piece, comprising: positioning fixture, its top surface central position is set positioning groove, wafer is embedded and adhered in positioning groove;Lower pressing seat, it is driven to lift and is arranged above positioning fixture, its bottom array is set several suction cups, suction cup is positioned in lifting inner plate, lifting inner plate is slidably sealed and arranged in the bottom of movable cavity opened in lower pressing seat bottom, the bottom edge of movable cavity is set and extends to the limiting boss of lifting inner plate inner side, movable cavity is communicated first joint by communicating port, and first joint is connected with the gas supply end of external gas supply mechanism. The utility model can solve the problem that wafer is prone to side shift when existing patch device presses wafer, which leads to collision and friction between wafer and pressing structure, substrate, and the pressing force of pressing structure directly pressing wafer cannot be stably controlled, so that wafer is prone to splitting.

This invention discloses a porous ceramic for semiconductors and its preparation method, which is mainly composed of the following raw materials by weight percentage: 50-80% high-temperature calcined oxide, 1-10% boron oxide, 5-20% silicon dioxide, 5-15% calcium carbonate, 3-5% lithium carbonate, 0.5-1.5% yttrium oxide, 2-15% sodium carbonate, and 0.3-0.8% zirconium tungstate. The preparation steps of the porous ceramic include: 1) thoroughly mixing all raw materials; 2) forming the mixed powder particles into a green body in a mold; and 3) sintering the green body in an oxygen-rich atmosphere with an oxygen volume ratio ≥30%. This porous ceramic material has good air permeability, low density, high strength, and a low coefficient of thermal expansion, making it an excellent choice for preparing vacuum adsorption components for cutting ceramic substrates and wafer thinning equipment.

This invention relates to the technical field of semiconductor processing, and more particularly to a non-contact hidden wafer dicing process and wafer structure, comprising the following steps: S1, front-side film application: A special thin-film application machine is used to apply a thin-film coating to the front side of the fan-out composite wafer, thereby fixing and protecting the front side of the wafer; S2, wafer thinning: The composite wafer with the thin-film coating is placed into a thinning machine for back-side thinning until the wafer reaches a preset thickness; S3, laser grooving: A laser device is used to create grooves of a preset depth on the cutting path of the thinned composite wafer for cutting positioning; S4, first film coating: The thin-film coating is removed, and a front-side protective film is applied to the front side of the composite wafer using a film application machine for secondary protection of the front side of the wafer; This invention achieves seamless automatic wafer clamping and stable film expansion operation.

The wafer thinning and trimming device comprises a base, a thinning module arranged on the base, a front-end module arranged on the base and adjacent to the incoming end of the thinning module, a trimming module arranged on the base and adjacent to the outgoing end of the thinning module, and a cleaning module arranged on the base in parallel with the thinning module, adjacent to the outgoing end of the thinning module and / or adjacent to the outgoing end of the trimming module, and adjacent to the front-end module. The wafer thinning and trimming device can improve the utilization rate of the wafer thinning and trimming device space. Meanwhile, the wafer thinning and trimming device can also achieve the purpose of improving production efficiency.

This application provides a support fixture for a wafer thinning apparatus. The wafer thinning apparatus has a central connection hole. The wafer thinning apparatus includes an annular body and a polishing layer. The annular body surrounds the connection hole. The annular body also includes a first annular surface and a second annular surface. Both the first and second annular surfaces surround the connection hole, and the second annular surface protrudes from the first annular surface in a direction away from the connection hole and is provided with a polishing layer. The support fixture includes a support surface for supporting the first annular surface. The support surface of the support fixture can support the first annular surface to hold the wafer thinning apparatus in place, thereby improving the safety of operators directly contacting the wafer thinning apparatus. Furthermore, since the second annular surface protrudes from the first annular surface in a direction away from the connection hole and is provided with a polishing layer, the risk of operators and the support fixture directly contacting the polishing layer can be reduced, further improving the safety of replacing the wafer thinning apparatus.

The application relates to the field of semiconductors and discloses a multi-source heterogeneous material wafer and wafer synchronous bonding method, which comprises the following steps: thinning and cutting each wafer to be bonded to obtain a plurality of heterogeneous material wafers; forming a temporary bonding glue layer on the surface of a carrier wafer and softening the temporary bonding glue layer; pasting the plurality of heterogeneous material wafers on the soft temporary bonding glue layer, and adjusting the pasting pressure according to target parameters of the plurality of heterogeneous material wafers, so that the plurality of heterogeneous material wafers are coplanarized and fixed on the surface of the carrier wafer; aligning the carrier wafer with the plurality of heterogeneous material wafers fixed thereon with a target wafer, and one-time synchronous bonding of the plurality of heterogeneous material wafers and the target wafer is realized through a bonding process. The wafer to be cut is thinned, the thickness of the plurality of heterogeneous material wafers is compensated by softening the temporary bonding glue layer and adjusting the pasting pressure, the surfaces of the heterogeneous material wafers tend to be coplanar, an intermediate layer is not needed, and one-time synchronous bonding to the target wafer is realized, so that the time is shortened.

The application relates to the technical field of integrated circuit manufacturing, and discloses application of spiral calcium carbonate in grinding blocks and wafer thinning grinding wheels. The spiral calcium carbonate is applied in the grinding block, wherein the spiral calcium carbonate contains Si-O-Ca structure and is used for dispersing stress during grinding of the grinding block; the crystal form of the spiral calcium carbonate is vaterite type, the spiral calcium carbonate comprises a plurality of flaky crystals, the plurality of flaky crystals are arranged in a spiral shape around the center, and adjacent flaky crystals are partially stacked, so that the spiral calcium carbonate has a chiral characteristic, and the plurality of flaky crystals can disperse stress during grinding; and the spiral calcium carbonate is induced by calcium ions and amino silane aspartic acid. Through the technical scheme, the problem of poor flatness of a wafer after thinning in the related art is solved.

This application discloses a wafer thinning system and method, electronic device, and storage medium. The wafer thinning method includes: for the nth wafer in a batch of wafers to be thinned, controlling a grinding module to grind the nth wafer according to a grinding coefficient, and controlling a polishing module to polish the ground wafer once according to a pressure response coefficient, to obtain a thinned wafer. The pressure response coefficient characterizes the relationship between the desired applied pressure and the desired removal rate morphology of each polishing region; updating the pressure response coefficient of each polishing region according to the removal rate morphology corresponding to each pair of adjacent polishing regions in the nth wafer, where n is a positive integer; and continuing to grind and polish the (n+1)th wafer based on the updated pressure response coefficient until the thinning of a batch of wafers is completed. The solution of this application can effectively improve the problem of insufficient polishing accuracy during the thinning process.

The utility model discloses a wafer thinning machine is with air bearing, including fixed part, including the outer ring, lower inner ring and lower end cover, lower inner ring is assembled in the bottom of outer ring and is fixedly connected through lower end cover, and lower inner ring is used for with the fixed platform of wafer thinning machine, rotating part, including the inner ring, upper inner ring and upper end cover, the inner ring is assembled in the inside of outer ring, and upper inner ring is assembled in the top of outer ring and is fixedly connected through upper end cover, air passage, including the upper air groove of setting in the top of inner ring, the lower air groove of bottom and the communicating groove of intercommunication upper air groove and lower air groove. The utility model has the beneficial effects that: the rigidity and load capacity of bearing platform are promoted by large -size inner ring and multiple throttle hole design, are applicable to high -precision wafer thinning, gas film lubrication and ceramic inner ring 400 significantly reduce friction loss, and bearing life is promoted to 3 times or more than traditional mechanical bearing, and external air path system realizes air pressure dynamic regulation, and ensures the consistency and surface quality of wafer processing.

This disclosure relates to a temporary bonding structure, a temporary substrate, and a temporary bonding method. The temporary bonding structure includes: a temporary substrate, a device wafer, and bonding adhesive disposed between the temporary substrate and the device wafer; the device wafer has an edge trimming region on the side near the temporary substrate; the temporary substrate has a adhesive storage tank on the side near the device wafer; wherein the orthographic projection of the adhesive storage tank onto the device wafer is at least partially located within the edge trimming region, and the adhesive storage tank is used to store excess bonding adhesive during bonding of the device wafer and the temporary substrate. This disclosure can improve the quality of temporary bonding and ensure the reliability of wafer thinning processes and other back-side processes after temporary bonding.

The application relates to the technical field of integrated circuit manufacturing, and discloses a grinding wheel and a preparation method thereof, wafer thinning equipment and a thinning method. The wafer thinning equipment comprises a grinding device and an adsorption platform. The adsorption platform is used for supporting and rotating a wafer. The grinding device is arranged above the adsorption platform in a lifting mode. The lower part of the grinding device is provided with a grinding wheel used for grinding the wafer. The grinding wheel comprises a base material and a plurality of grinding blocks. The grinding blocks are fixed to the base material through an adhesive layer. The grinding block comprises a ceramic base, grinding particles distributed in the ceramic base, and a composite nano coating wrapped on the surface of the grinding particles and used for enhancing the interface bonding strength of the grinding particles and the ceramic base. The composition of the composite nano coating comprises cerium oxide and zirconium oxide. Through the technical scheme, the problems of short service life of the grinding wheel and poor surface quality of the thinned wafer in the related art are solved.

The application provides a wafer thinning processing control method, a control system and a processing device, and belongs to the technical field of wafer thinning processing. The control method comprises the following steps: obtaining the initial thickness and the real-time thickness of the wafer currently processed; obtaining the downward movement amount of the grinding wheel spindle when the last processing is completed; calculating the change value of the downward movement amount of the grinding wheel spindle when each processing is completed and the change value of the thickness of the wafer; calculating the real-time downward movement threshold of the grinding wheel spindle according to the initial thickness, the real-time thickness, the downward movement amount of the grinding wheel spindle when the last processing is completed, each change value of the downward movement amount and each change value of the thickness; and controlling the grinding wheel spindle to stop when the real-time downward movement amount of the grinding wheel spindle is greater than or equal to the real-time downward movement threshold. The wafer thinning processing control method can avoid the situation that the wafer is scrapped due to over-grinding caused by the fault of the thickness detection device.

The utility model relates to wafer thinning technical field, specifically disclose wafer centering device. The device is used for processing the wafer with the edge having the mark position, including base module, movable module, camera piece and handling module, movable module is along first direction and is arranged in base module, and movable module includes wafer carrying platform, and wafer carrying platform is used for placing wafer, and wafer carrying platform can rotate around working axis, and working axis extends along vertical direction and passes through the center point of wafer carrying platform, camera piece is located above wafer carrying platform, and camera piece is used for obtaining the position information and the orientation information of mark position of wafer, handling module can carry wafer along second direction, and handling module can take and place wafer to wafer carrying platform. The device changes the positioning mode when wafer is centered, avoids the situation that wafer is subjected to extrusion, and reduces the risk of wafer damage.