292 results about "Wafer thinning" patented technology

The invention provides a wafer thinning equipment control method and device, electronic equipment and a storage medium, and relates to the technical field of wafer thinning. The method comprises the following steps: monitoring spreading and thinning behaviors of a spin-coating liquid film in real time and generating a residual layer distribution diagram; according to an area indicated by the residual layer distribution map, obtaining local thickness information by analyzing a fluorescence signal received from the area; after a laser beam is used for scanning the surface of the wafer, micro-vibration signals are recognized and extracted by analyzing reflected light signals; dividing the surface of the wafer into a plurality of grid areas; and the risk of generating cracks in each grid area is evaluated, and a wafer surface risk thermodynamic diagram used for controlling the grinding head and the grinding fluid is generated. The method aims at solving a series of problems caused by a microcosmic residual layer on the surface of the wafer or surface energy difference in the wafer thinning process, early and accurate sensing of microcosmic abnormity on the surface of the wafer is achieved, and a control system is guided to conduct regional and self-adaptive grinding parameter adjustment.

The invention relates to the technical field of semiconductor manufacturing, and provides wafer thinning equipment and a wafer thinning process. The wafer thinning equipment comprises a plurality of grinding discs, a functional assembly and a slicking assembly; two functional assemblies are correspondingly arranged on the grinding face of each grinding disc, and two grinding areas are formed between the two functional assemblies. The functional assembly is used for cleaning the grinding area and spraying grinding fluid; the slicking assembly penetrates through the grinding areas of the multiple grinding discs and is used for dispersing grinding fluid. The functional assembly is arranged corresponding to the grinding disc, the grinding fluid in the grinding area of the grinding disc can be cleaned, and the grinding fluid is sprayed again, so that wafer grinding particles can be cleaned, and the purity of the grinding fluid is ensured; and meanwhile, by arranging the slicking assembly, the grinding fluid can be uniformly dispersed before the grinding fluid is in contact with the wafer, so that local aggregation of the grinding fluid is avoided, the stress concentration problem is prevented, the wafer cannot be scratched, and the grinding precision is guaranteed.

The invention provides wafer thinning and polishing equipment, and belongs to the technical field of semiconductor processing. The round suction cup is arranged under the grinding disc, and a strip-shaped groove penetrating through the peripheral side of the round suction cup is formed in the top of the round suction cup in the radial direction; the lifting plate is vertically and movably arranged at the outward end of the strip-shaped groove at intervals, and a first U-shaped plate is arranged at the top of the lifting plate; the temporary storage frame comprises a first vertical frame and a pair of arc-shaped baffles matched with the peripheral side of the wafer in shape, multiple pairs of supporting strips are arranged in the first vertical frame in the vertical direction in an array mode, and the first vertical frame is arranged in the first U-shaped plate; and the first pushing mechanism is arranged on the side, away from the circular suction cup, of the first U-shaped plate, the telescopic end of the first pushing mechanism is connected with one end of the strip-shaped suction cup through a pushing block, and the strip-shaped suction cup is arranged towards the strip-shaped groove. According to the equipment, automatic feeding and discharging of wafers can be realized in wafer thinning production, and the production efficiency is improved.

The invention discloses a laser-chemical composite surface planarization process based on a laser stripping sheet. The method comprises the following steps: firstly, carrying out surface scanning on the surface of a wafer subjected to laser-ultrasonic stripping by adopting femtosecond laser, thinning the wafer to a first target thickness through an ultra-short pulse cold working mechanism, and optimizing the sharp corner fluctuation of the surface at the same time; then immersing the wafer into a hydrofluoric acid-nitric acid mixed solution containing a platinum / iridium catalyst, accurately etching the residual sharp corner by utilizing a selective catalytic reaction of a contact point of a catalyst plate and the wafer, and feeding back and adjusting processing parameters in real time through a morphology monitoring module and an infrared thermal imaging system; and finally, thinning to the required thickness by adopting chemical mechanical polishing, and obtaining an atomic-scale flat surface. According to the technology, through the synergistic effect of laser pre-thinning and chemical etching, the problems that a traditional grinding technology is low in efficiency and large in material consumption are solved, and the technology has the advantages of being efficient, low in damage, high in precision and the like and is suitable for surface treatment of hard semiconductor wafers such as silicon carbide and gallium nitride.

The invention belongs to the technical field of semiconductors, and particularly relates to a preparation method of a single-crystal-on-silicon thin film product and the thin film product. The method comprises the following steps: high-temperature oxidation: feeding a support wafer into a high-temperature vertical furnace for high-temperature oxidation; fusing and bonding: fusing and bonding the device wafer and the support wafer to form a first bonded wafer; the first bonding wafer is preprocessed to obtain a second bonding wafer, the first bonding wafer is placed on a multi-point support, a force F perpendicular to the surface of the first bonding wafer is applied to the upper portion of the corresponding fulcrum, and F ranges from 0.5 N to 3 N; low-temperature annealing: carrying out low-temperature annealing on the second bonding wafer at 100-300 DEG C to obtain a third bonding wafer; and thinning treatment: carrying out thinning treatment on the third bonding wafer to obtain a single crystal film product on silicon. According to the method, the stress damage problem of the single crystal film product on the semiconductor silicon is solved, the generation probability of wafer surface defects is reduced, and the yield of the single crystal film product on the silicon is improved.

The invention relates to the technical field of semiconductor wafer processing, and particularly discloses an adhesive tape for semiconductor wafer thinning and a preparation process thereof. The adhesive tape for semiconductor wafer thinning comprises a base material layer and a bonding layer arranged on the surface of the base material layer, the base material layer is made of polyolefin, and the bonding layer is a modified acrylic acid adhesive layer; the modified acrylic acid adhesive layer is prepared from the following raw materials in parts by weight: 60 to 70 parts of 2-ethylhexyl acrylate, 15 to 25 parts of butyl acrylate, 5 to 10 parts of methyl methacrylate, 2 to 5 parts of hydroxyethyl acrylate, 0.5 to 2 parts of glycidyl methacrylate, 1 to 3 parts of a modifier, 0.8 to 1.2 parts of an isocyanate cross-linking agent, 0.3 to 0.8 part of an epoxy cross-linking agent and 0.3 to 0.8 part of azodiisobutyronitrile. According to the adhesive tape for semiconductor wafer thinning, the fixing and protecting effects on the wafer are improved.

The invention relates to the technical field of adhesive tapes, in particular to a convex ball-mounting wafer thinning adhesive tape, a preparation method thereof and a wafer thinning machine, the thinning adhesive tape comprises a base material film, a viscosity-reducing adhesive layer and a release film; the preparation method comprises the following steps: preparing a first polymer network; preparing a second polymer network; the adhesive composition is obtained; forming a liquid film; covering the base material film on a liquid film; covering a release film on the upper surface of the fixed module in the wafer thinning machine; in a wafer thinning machine, the wafer with the base material film is installed on a release film, and heating treatment is carried out on the laminated wafer so as to directly form a solidified thinning adhesive tape on the wafer; by constructing a thermal / optical dual-curing interpenetrating polymer network with a dual visbreaking mechanism and combining with a special preparation method of the thinning adhesive tape in a thinning machine, the probability that a convex ball-mounting wafer generates microcracks or warps in a specific area when the adhesive tape is used for thinning operation is reduced.

The invention discloses a heat dissipation enhanced semiconductor packaging method, which comprises the following steps of: performing deep silicon etching to form a vertical through hole; insulation and metallization are carried out; thinning the wafer; performing hybrid bonding and stacking of multiple layers of chips; a heat dissipation design is adopted to form a vertical heat dissipation path; a three-dimensional thermal through hole network: adding pure copper thermal through holes in a non-functional area; performing microfluid cooling integration; molding and packaging; and thermal performance verification: verifying that the junction temperature can be controlled within 85 DEG C through infrared thermal imaging and finite element simulation. The TSV with the depth-to-width ratio of 10: 1 can be realized by adopting the Bosch process; a three-dimensional integrated TSV array supporting HBM and other high-speed memories is embedded into diamond or graphene heat dissipation columns, a low-heat-resistance vertical heat dissipation path is formed by combining a three-dimensional pure copper heat through hole network, and local hot spots are effectively dispersed; the high-thermal-conductivity epoxy molding compound and the embedded copper block enhance the overall mechanical strength and thermal diffusivity, so that the product can dissipate heat efficiently, and the overall area is not easy to influence.

The utility model discloses a grinding device of a wafer thinning machine, which comprises a grinding wheel mechanism, and the grinding wheel mechanism comprises a grinding wheel mounting rack, a first Z-axis lifting mechanism mounted on one side of the grinding wheel mounting rack, a Z-axis lifting plate connected with the first Z-axis lifting mechanism, and a main shaft mounting seat connected to one side of the Z-axis lifting plate. The motorized spindle is mounted on the spindle mounting seat; the electric spindle is further in driving connection with a grinding wheel mounting seat, and a first grinding wheel is further mounted at the bottom of the grinding wheel mounting seat; a plurality of first grinding wheel teeth arranged in the vertical direction are arranged in the circumferential direction of the bottom of the first grinding wheel at intervals. Compared with equipment applying an air floating main shaft, a mechanical main shaft grinding mode is adopted, so that the rigidity is greatly improved, the grinding machine can adapt to grinding of high-hardness materials, and the application range is wider.

The invention discloses an ultrasonic vibration auxiliary electrochemical mechanical thinning method and device for a large-diameter wafer, and belongs to the technical field of large-diameter semiconductor wafer thinning, and the device comprises a grinding system, an electrochemical system and an electrolyte circulating system. The grinding system comprises a micro-feeding unit, a main shaft rotating unit and an ultrasonic vibration unit, and the main shaft rotating unit and the ultrasonic vibration unit drive the cup-shaped grinding wheel to rotate and axially vibrate. The electrochemical system takes a cup-shaped grinding wheel as a cathode and a wafer as an anode, and an electrolyte is supplied between the cathode and the anode to generate electrochemical reaction. In the thinning process, the surface of the wafer is subjected to anodic oxidation modification to generate a modification layer easy to remove, meanwhile, the generated modification layer is removed by the grinding wheel, the grinding wheel with ultrasonic vibration facilitates chip removal and heat dissipation, circulation of electrolyte can be enhanced, and then the electrochemical modification effect is improved; the annular structure of the grinding wheel has better removal uniformity under the vibration condition, and efficient, high-precision and low-damage large-diameter wafer thinning can be achieved.

The invention provides a contact type measurer and wafer thinning equipment. The contact-type measurer includes: a first mounting seat configured with a mounting hole; the first measuring rod is mounted in the mounting hole and horizontally extends to the position above the bearing table, a first measuring head is arranged at the tail end of the first measuring rod, and the first measuring rod can ascend and descend in the mounting hole so that the first measuring head can make contact with the wafer and ascend and descend along with the change of the thickness of the wafer; the protective air pipe is provided with a vent groove which extends along the length of the protective air pipe and is provided with a downward opening, the protective liquid pipe is provided with a liquid groove which extends along the length of the protective liquid pipe and is provided with a downward opening, and the vent groove discharges air downwards to form an air curtain so as to prevent machining chippings from entering the mounting hole; the liquid flowing groove discharges liquid downwards to form a liquid curtain so as to prevent machining chippings penetrating through the air curtain from entering the mounting hole. According to the technical scheme, accumulation of chippings at the mounting hole can be effectively reduced, interference to movement of the measuring rod is avoided, and therefore the measuring accuracy is improved.

The invention relates to the technical field of semiconductors, and provides a manufacturing method of a semiconductor device. The manufacturing method comprises the steps that an edge area of a wafer is trimmed from a first face of the wafer to form a step, the step comprises a step face and a step side face, and the width of the step face is smaller than or equal to that of the edge area; forming a bonding layer on the first surface of the wafer and the side surface of the step so as to fix the wafer on the slide glass; wherein the step surface comprises a plurality of areas arranged along the circumferential direction of the wafer, and the contact area between a first area in the plurality of areas and the bonding layer is smaller than the contact area between a second area and the bonding layer; cutting an edge area where the first area is located from the second surface, wherein a notch extends from the second surface to the step surface; and performing a thinning process on the wafer from the second surface. According to the invention, the edge region where the first region is located is cut before the thinning process, so that the width of the step surface is reduced, the moment applied to the first region in the wafer thinning process is reduced, the risk of edge collapse is reduced, and the yield and reliability of chips are improved.

The invention relates to the field of semiconductors and piezoelectric materials, in particular to a method for improving bonding strength of a lithium tantalate wafer, which comprises the following steps: a) thinning, polishing and cleaning the lithium tantalate wafer; b) cleaning the substrate slice with a weakly alkaline solution and then immediately cleaning the substrate slice with a cooling water bath; c) carrying out step-by-step cooling treatment on the substrate slice and then storing at constant temperature; d) carrying out surface activation on the lithium tantalate wafer and the substrate slice by using plasma; e) aligning the lithium tantalate wafer and the substrate slice, and pressurizing and bonding to obtain a bonded slice; and f) inspecting the bonding sheet. By optimizing the lithium tantalate wafer thinning and polishing process and the substrate slice low-temperature treatment process, the problems of edge tilting and surface roughness of the lithium tantalate wafer, self defects of the substrate slice and poor bonding caused by difference of thermal expansion coefficients of a functional layer and a substrate layer during bonding are effectively solved, and high-strength, high-precision and high-stability bonding is realized.

The invention relates to the technical field of semiconductor wafer processing, and provides a grinding wheel self-sharpening enhancement method and device and wafer thinning equipment. The method comprises the following steps of: determining a main washing position: judging whether the grinding wheel is subjected to outer edge processing or not based on the position of a grinding line of a grinding wheel grinding wafer and the rotating direction of the wafer, if so, determining the main washing position to be the outer side of the grinding wheel, and otherwise, determining the main washing position to be the inner side of the grinding wheel; the liquid spraying pressure and the swing frequency of the flusher at the main flushing position are set to be larger than the liquid spraying pressure and the swing frequency of the flusher on the opposite side; determining the flushing direction of the flusher based on the adhesion state of the abrasive particles forming the abrasive wheel and the adhesion state of the pollutants on the abrasive wheel; and based on the ratio of the feeding speed of the grinding wheel to the set feeding speed in the grinding process, the liquid spraying pressure and the swing frequency of the flusher are adjusted. According to the grinding wheel, the self-sharpening performance of the grinding wheel can be effectively enhanced, meanwhile, protection is provided for the grinding teeth, and the wafer thinning quality and efficiency are improved.

The invention relates to the technical field of integrated circuit manufacturing, and provides wafer thinning equipment and a wafer thinning method. The wafer thinning equipment comprises a grinding device and an adsorption platform, the adsorption platform is used for bearing a wafer and driving the wafer to rotate, the grinding device is arranged above the adsorption platform in a lifting mode, and a grinding wheel used for grinding the wafer is arranged on the lower portion of the grinding device. The grinding wheel comprises a base material and a plurality of grinding blocks, and the grinding blocks are fixed to the base material through adhesive layers. The grinding block comprises spiral calcium carbonate containing a Si-O-Ca structure and is used for dispersing stress during grinding. According to the technical scheme, the problem that the flatness of the thinned wafer is poor in the prior art is solved.

The invention discloses a rigidity measuring device and method for a wafer thinning machine. The rigidity measuring device comprises a force application module, a displacement measuring module, a visual auxiliary module and a signal processing module. A composite structure of an arc-shaped force application plate, a piezoelectric ceramic piece and a belleville spring is adopted as a core force application unit, the piezoelectric ceramic piece loads and simulates real grinding force, and the belleville spring provides force application buffering; in the data processing process, the instantaneous rigidity value is calculated in real time, the curvature change of the acting force-displacement curve is dynamically analyzed, and when the rigidity sudden change condition is met or the curvature changes remarkably, abnormity is recognized in time, and testing is stopped. According to the invention, the problem that the rigidity of the whole machine cannot be measured in a narrow space of the thinning machine due to geometric mismatch and overlarge thickness is solved, the integrated overload protection mechanism ensures the safety, the innovative data processing method can capture rigidity mutation in real time, and the accuracy and reliability of rigidity evaluation of equipment in a stable working interval are remarkably improved.

The utility model discloses a thinning rotary table device of a wafer thinning machine. The thinning rotary table device comprises a rotation driving mechanism, a mechanical rotary table, a vacuum suction plate and a ceramic disc, the mechanical rotary table is connected with a rotation driving mechanism, and the top of the mechanical rotary table is further connected with a mounting flange. The vacuum suction plate is mounted on the mounting flange; the ceramic disc is arranged on the vacuum suction plate, and the top of the ceramic disc is used for bearing a product to be thinned. The water-proof rotary table is reasonable in design, compact in structure, large in overall rigidity, suitable for machining products with high hardness and high precision requirements, good in overall water-proof performance, capable of preventing grinding water from entering the rotary table and further avoiding affecting normal work of the rotary table, and high in practicability.

The utility model relates to the technical field of semiconductor wafer thinning, and discloses a semiconductor wafer-based thinning device, which comprises a rack, a bearing assembly, a lifting assembly and a polishing assembly, the bearing assembly is fixedly installed on the rack to bear and fix a wafer, the grinding assembly is arranged above the bearing assembly to grind and reduce the thickness of the wafer, the grinding assembly is connected with the lifting assembly, and the lifting assembly drives the grinding assembly to move up and down; the bearing assembly comprises a workbench, an adsorption bearing structure and an auxiliary bearing structure, the workbench is fixedly installed on the rack, and the adsorption bearing structure and the auxiliary bearing structure are both installed on the workbench. According to the utility model, the fixed wafer is adsorbed and borne through the bearing assembly, so that the adsorption force and the bearing force of the wafer can be dispersed, the wafer is prevented from being broken due to stress concentration, and the stability and the safety of wafer fixation are effectively improved.

The utility model relates to the technical field of wafer thinning machines, in particular to a wafer thinning machine front face and back face recognition mistake proofing mechanism which comprises a base, four limiting holes are symmetrically formed in the top end of the base, electric telescopic rods are fixedly connected into the limiting holes, the top ends of the electric telescopic rods are fixedly connected with a fixing base, and the fixing base is fixedly connected with a wafer thinning machine front face and a wafer thinning machine back face recognition mistake proofing mechanism. A limiting groove is formed in the fixing base, a spring is fixedly connected to the interior of the limiting groove, and a feeler lever located in the limiting groove is fixedly connected to the bottom end of the spring. Then the electric telescopic rod drives the fixing seat and the wafer to descend, the wafer is ground and thinned through the rotating grinding disc along with contact of the wafer and the grinding disc, and under the action of limiting of the fixing ring and the size of the grinding disc, a frame is left at the edge of the ground wafer; the front and back surfaces of the wafer can be easily judged through the frame left at the edge of the wafer.

The utility model belongs to the technical field of thickness detection, and discloses a thickness detection mechanism and wafer thinning equipment. The thickness detection mechanism comprises a mounting base, a first contact detection module and a non-contact detection module. The first contact detection module is arranged on the mounting base and used for detecting the thickness of the workpiece in the first machining stage in real time. The non-contact detection module is arranged on the mounting base and used for detecting the thickness of the workpiece in the second machining stage in real time. The thickness detection mechanism has the advantages that the structure is independently designed and mounted, the structure is compact and stable, and the accuracy of a detection result can be improved by adopting different processing modes for workpieces at different processing stages. The wafer thinning equipment provided by the utility model uses the thickness detection mechanism, so that the surface of the wafer can be protected from being scratched.

The invention provides a temporary bonding adhesive as well as a preparation method and application thereof. The temporary bonding adhesive is prepared from the following components in parts by mass: 20 to 80 parts of organic solvent, 5 to 35 parts of SEBS (Styrene-Ethylene-Butylene-Styrene) resin and / or SEPS (Styrene-Ethylene-Phenylene-Styrene) resin, 5 to 20 parts of synthetic resin and 0.1 to 5 parts of additive. The temporary bonding glue provided by the invention can provide enough supporting force in wafer thinning, also has the advantages of chemical liquid corrosion resistance, storage stability and the like, and is suitable for a temporary bonding process of wafer HBM (Heterojunction Bonding Molding) processing.

The invention provides a high-yield low-capacitance TVS (Transient Voltage Suppressor) diode packaging process, which comprises the following steps: S1, back metallization: a sputtering table is adopted, the thickness of Ti / Ni / Ag is 50 / 200 / 800nm, and the back temperature is lt; the contact resistance is less than or equal to 0.05 m omega.mm < 2 > and the resistance is gt; 0.08, sputtering again; s2, wafer thinning and stress release are carried out; s3, front passivation / low-k dielectric layer preparation; s4, preparing an aluminum-copper bump; s5, performing laser scribing; s6, inversely mounting a patch; s7, performing vacuum reflow soldering; s8, plasma cleaning and plasma underfilling are carried out; and S9, laser marking is carried out. According to the process, five contradictions of'extreme low capacitance, extreme yield, low temperature drift, zero cavity and green manufacturing 'are simultaneously grounded in the same package, so that the TVS device really meets the dual requirements of a 40Gbps high-speed interface and a vehicle gauge for the first time.

The invention provides a wafer cleaning device and wafer thinning equipment comprising the same. The wafer cleaning device comprises a plurality of clamping rotating wheels used for clamping and limiting a wafer to be cleaned; the back cleaning rolling brush assembly comprises a back cleaning rolling brush and a back cleaning rolling brush support, the back cleaning rolling brush is installed on the back cleaning rolling brush support, and the back cleaning rolling brush support is used for supporting the back cleaning rolling brush and enabling the back cleaning rolling brush to be attached to the back of the wafer. The back cleaning rolling brush is a segmented rolling brush passing through the circle center of the wafer and is composed of a first rolling brush half part and a second rolling brush half part which are independent, and when the back of the wafer is cleaned, the first rolling brush half part and the second rolling brush half part are opposite in rotation direction. The wafer back cleaning device is suitable for cleaning the back of the wafer after the dicing process, cleaning of the back of the wafer and the cleaning device can be achieved, and damage of the cleaning device to the wafer is reduced.

The utility model relates to the technical field of thinning processing lossless fixing devices, in particular to a sheet wafer thinning processing lossless fixing device which comprises a device body used for bearing a wafer and an electric adsorption disc used for adsorbing and fixing the wafer, and the electric adsorption disc is embedded in the surface of the device body. A plurality of annularly arranged grooves are formed in the surface of the device main body, moving assemblies are arranged in the grooves, each moving assembly comprises a moving block, a guide rod, a limiting groove, a moving plate, a clamping block and a spring ring, the guide rods are fixedly connected in the grooves, and the moving blocks are connected to the outer sides of the guide rods in a sliding mode. Through the arrangement of the plurality of limiting rings and the moving assembly, upward movement and storage of the limiting rings are facilitated, the plurality of limiting rings with different diameters can be suitable for wafers with different diameters, the universality of the device main body is improved, and through the arrangement of the lifting assembly, vertical movement of the limiting rings is conveniently controlled.

The application discloses a laser modification polishing integrated method for improving thinning efficiency of silicon carbide wafers. First, the wafer is placed on an ultrasonic vibration platform; then laser slow scanning parameters are set to make the semiconductor wafer efficiently modified under the action of ultrasonic vibration; then an air flow device is started, laser polishing parameters are set, and the laser is polished on the surface of the modified wafer under the action of ultrasonic vibration and high-speed air flow; finally, the wafer after laser polishing is ground and thinned by a wafer thinning machine matched with a fine-grit diamond grinding wheel, so that the final finished product sample is obtained. The method has the advantages of simplicity, high efficiency, strong repeatability and the like, and in combination with an external field assisted laser modification polishing process, the thinning efficiency can be effectively improved and the wafer thinning cost can be reduced.

The utility model discloses a main shaft debugging tool which comprises a main shaft positioning piece, and the main shaft positioning piece is provided with a first positioning part and a first peripheral surface; the table surface positioning piece is provided with a second positioning part; the positioning connecting piece can be matched with the first positioning part and the second positioning part respectively, so that the axis of the main shaft is parallel to the axis of the rotating table; the measuring assembly comprises a telescopic measuring meter hand, the measuring assembly can be detachably connected to the table top positioning piece through a first connecting structure, and the first connecting structure is configured to enable the top end of the measuring meter hand to coincide with the axis of the table top positioning piece, so that the debugging precision and operability can be improved; the precise position relation between the main shaft of the wafer thinning machine and the rotating table is ensured, the machining precision of equipment and the product quality are improved, and high-quality wafer products can be produced easily.

The utility model discloses a wafer thinning device which comprises a grinding device, and the grinding device comprises a grinding wheel mechanism. The grinding wheel mechanism comprises a grinding wheel mounting frame, a first Z-axis lifting mechanism mounted on one side of the grinding wheel mounting frame, a Z-axis lifting plate connected with the first Z-axis lifting mechanism, a main shaft mounting seat connected to one side of the Z-axis lifting plate, and an electric main shaft mounted on the main shaft mounting seat; the electric spindle is further in driving connection with a grinding wheel mounting seat, and a first grinding wheel is further mounted at the bottom of the grinding wheel mounting seat; a plurality of first grinding wheel teeth arranged in the vertical direction are arranged in the circumferential direction of the bottom of the first grinding wheel at intervals. Compared with equipment applying an air floating main shaft, a mechanical main shaft grinding mode is adopted, the rigidity is greatly improved, the rotary table device can adapt to grinding of high-hardness materials, the application range is wider, meanwhile, the rotary table device is good in waterproof performance, grinding water can be prevented from entering the rotary table, normal work of the rotary table is prevented from being influenced, and practicability is high.

The application discloses a laser marking system and marking method, and a gallium nitride wafer structure. The marking system comprises a laser module, a focusing module and a control module. The laser module is used for outputting light rays towards the back surface of the wafer structure. The focusing module is arranged between the wafer structure and the laser module and is used for focusing the light rays output by the laser module to obtain focused light spots. The control module is used for controlling one or more of the wafer structure, the laser module and the focusing module to move according to a preset pattern to control and adjust the relative positions of the wafer structure and the focused light spots, so that the focused light spots move according to the preset pattern inside the wafer structure and perform etching to form an identification pattern inside the semiconductor wafer substrate. The target distance between the end surface close to the back surface of the identification pattern and the back surface is greater than the thinning thickness of the semiconductor wafer substrate thinned from the back surface. The wafer thinning process from the back surface does not have a destructive effect on the formed identification pattern.

The invention provides a processing method for modifying and thinning a silicon carbide wafer by using laser and a silicon carbide wafer thinning sheet, and relates to the technical field of crystal laser processing. The method comprises the following steps: S1, carrying out first laser scanning on a to-be-thinned surface of a silicon carbide wafer to form a modified layer in the silicon carbide wafer; s2, performing second laser scanning on the circumferential edge part of the to-be-thinned surface after the first laser scanning to enable a modified layer formed on the circumferential edge part to extend towards the to-be-thinned surface; s3, sequentially carrying out separation and grinding wheel thinning on the silicon carbide wafer subjected to the second laser scanning to obtain a silicon carbide wafer thinned sheet; wherein the thickness of the modified layer after the second laser scanning is greater than that of the modified layer after the first laser scanning. Through two times of laser scanning, the modification method is optimized, the separation difficulty and the warping problem of the thinned wafer can be greatly reduced, and the abrasion of the grinding wheel and the cracking risk of the wafer are reduced.

A wafer thinning method, a grinding control device and related equipment, the wafer thinning method adopts a grinding device, the grinding device comprises a rotatable grinding wheel provided with a grinding part in the circumferential direction, and the wafer thinning method comprises the following steps: enabling a part of the grinding part on the grinding wheel to be in contact with the surface of a wafer and driving the grinding wheel to rotate, the wafer is thinned through the grinding part on the grinding wheel; in the process of thinning treatment, a part of the grinding part in contact with the surface of the wafer has a grinding track on the surface of the wafer, and the direction of the grinding track points to the edge of the wafer from the interior of the wafer, so that in the process of thinning treatment, the grinding part is firstly in contact with the central area of the wafer, and the wafer in the central area is generally thicker and can be supported by the bearing table; by means of the technical scheme, impact force generated when the grinding wheel makes contact with the center area of the wafer has small influence on the edge of the wafer, the probability that the edge of the wafer is broken, broken and peeled off is reduced, and the quality of the thinned wafer is improved.