Method for precisely controlling thinning of wafer
A technology of precise control and thin thickness, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unsatisfactory and unsatisfactory thickness control accuracy
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[0055] 1) Coat a layer of 4 micron photoresist 2 on the silicon wafer 1, and form a groove 3 pattern (such as a rectangle) at the cutting line.
[0056] 2) Using the plasma silicon etching method, the pattern of the trench 3 on the scribe line is etched to a specified thinning thickness of 15 microns (that is, the depth of the trench 3 is 15 microns).
[0057] 3) A photoresist ashing machine is used to remove the photoresist 2 on the surface of the silicon wafer 1 .
[0058] 4) The groove 3 is filled with tungsten by using a low-pressure chemical vapor deposition method.
[0059] 5) Complete the wafer process.
[0060] 6) Paste the blue film on the front of the wafer.
[0061] 7) The wafer is thinned to the bottom of the groove by Taikoo, and the thinning machine is controlled to stop on the tungsten at the bottom of the groove 3 by means of current rise.
[0062] 8) Peel off the front blue film, and the wafer thinning is completed.
[0063] The advantage of wafer thinning a...
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