Thinning method for backing side of wafer

A backside thinning and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as wafer edge bending and fracture, and achieve the effect of improving quality

Inactive Publication Date: 2009-04-01
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for thinning the back of the wafer, which solves the problem that the edge of the wafer is easily bent or even broken when thinning the back of the wafer in the prior art

Method used

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  • Thinning method for backing side of wafer
  • Thinning method for backing side of wafer
  • Thinning method for backing side of wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0062] Refer to image 3 As shown, another embodiment of the wafer backside thinning method of the present invention includes the following steps:

[0063] Step s10, grinding the back of the wafer to reach the grinding stop thickness;

[0064] Step s20, removing the peripheral edge of the wafer in the wafer edge gap range when the two wafers are bonded or when the wafer is placed on the support carrier;

[0065] Step s30, etching the backside of the wafer to reduce the thickness.

[0066] Each step will be further explained below.

[0067] For step s10, the grinding stop thickness is 100 to 200um.

[0068] For step s20, an etching method is used to remove the peripheral edge of the wafer in the gap range of the wafer edge when the two wafers are bonded or when the wafer is placed on the support carrier. In addition, the above-mentioned etching method is a method of ion reactive etching.

[0069] The ion reactive etching method includes the following steps:

[0070] Form a photoresis...

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Abstract

The invention relates to a method for thinning the back of a wafer, and the method comprises the following steps: the back of the wafer is grinded until the grinding stop thickness is achieved; the wafer periphery edge within the wafer edge clearance range when two wafers are bonded or the wafer is placed on a supporting carrier is removed; the back of the wafer is grinded until the thinning thickness is achieved. The method for thinning the back of the wafer solves the problem of easy bend or even fracture of the wafer edge when the back of the wafer is thinned, thus improving the quality of wafer thinning.

Description

Technical field [0001] The invention relates to a three-dimensional packaging process, in particular to a method for thinning the back surface of a wafer in the three-dimensional packaging process. Background technique [0002] As we all know, packaging technology is actually a technology for packaging chips, and this packaging is necessary for chips. Because the chip must be isolated from the outside world to prevent impurities in the air from corroding the chip circuit and causing electrical performance degradation. On the other hand, the packaged chip is also easier to install and transport. Since the quality of packaging technology also directly affects the performance of the chip itself and the design and manufacture of the PCB (printed circuit board) connected to it, it is very important. Packaging can also be said to be a housing for mounting semiconductor integrated circuit chips. It not only plays the role of placing, fixing, sealing, protecting the chip and enhancing th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302H01L21/304H01L21/3065H01L21/306
Inventor 黄河高大为蒲贤勇毛剑宏
Owner SEMICON MFG INT (SHANGHAI) CORP
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