4H-SiC ultraviolet photoelectric detector with spherical crown structure, and preparation method

An electrical detector, ultraviolet light technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as affecting quantum efficiency, and achieve the effects of improving detection performance, reducing thickness differences, and increasing absorption angle

Active Publication Date: 2018-08-14
XIAMEN UNIV
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Problems solved by technology

However, most of the 4H-SiC ultraviolet photodetectors now adopt a planar layered structure. This structure has the characteristics of directional detection, that is, it has a good detection effect for vertically incident ultraviolet light, but for obliquely incident ultraviolet light Light, the interface reflection caused by its tilt angle, the relative change of the thickness of the i-type absorbing layer and other accidents will inevitably affect its quantum efficiency.

Method used

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  • 4H-SiC ultraviolet photoelectric detector with spherical crown structure, and preparation method
  • 4H-SiC ultraviolet photoelectric detector with spherical crown structure, and preparation method
  • 4H-SiC ultraviolet photoelectric detector with spherical crown structure, and preparation method

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preparation example Construction

[0033] The preparation method of the 4H-SiC ultraviolet photodetector with spherical cap structure comprises the following steps:

[0034] 1) For the sample, that is, a highly doped double-throwing N + Type 4H-SiC substrate and the epitaxially grown i-type absorber layer on the surface are cleaned by RCA standard;

[0035] 2) Preparation of the spherical crown i-type absorbing layer: Combined with the multi-lithographic thick-resist photolithography development technology and ICP etching technology with gradual exposure area, the i-type absorbing layer of the sample was etched multiple times in different ranges to form a series of The arc-shaped table top finally forms the surface of the spherical crown i-shaped absorbing layer.

[0036] 3) Preparation of P + Type layer: A uniformly doped P with a thickness of about 0.2 μm is formed on the upper surface of the spherical crown i-type absorber layer by high-temperature ion implantation process and high-temperature annealing ac...

specific Embodiment

[0047] The structure of the 4H-SiC ultraviolet photodetector with spherical cap structure of the embodiment of the present invention is as follows figure 1 shown. Double-throw N at 4° off-axis with high doping + The N-type buffer layer 3 and the i-type absorber layer 7 are epitaxially and homogeneously grown on the type 4H-SiC substrate 2 in sequence; the thickness and doping concentration of the N-type buffer layer can be 0.5 μm and 5 μm, respectively. ×10 18 / cm 3 , The thickness and doping concentration of the i-type absorbing layer can be 4.0-6.0μm and 1×10 15 / cm 3 ;The i-type absorbing layer is etched into a spherical crown by using the thick-resist lithography process of multiple photolithography plates with gradually changing exposure areas and the ICP dry etching process. The maximum height of the spherical crown can be 4.0-6.0 μm; for the convenience of preparation And quantitatively increase the area of ​​the photosensitive surface and the absorption angle of i...

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Abstract

Disclosed are a 4H-SiC ultraviolet photoelectric detector with a spherical crown structure, and a preparation method. The ultraviolet photoelectric detector adopts a p-i-n structure; an N type bufferlayer and an i type absorption layer are grown on a highly-doped four-degree-off-axis double parabolic N+ type 4H-SiC substrate in sequence; an arc-shaped inclined table surface is formed on the i type absorption layer to form a spherical crown-shaped i type absorption layer surface; by adopting an injection and high-temperature annealing activation process, a P+ layer is formed on the upper surface of the spherical crown-shaped i type absorption layer; next, through a thermal oxidization method, a silicon dioxide passivation layer is grown on the surface of the P+ layer; through a photoetching process, an ICP etching process and a stripping process, a P type annular electrode window is etched in the silicon dioxide passivation layer of the P+ layer, and a P type electrode is formed by adopting a magnetron sputtering process; and the highly-doped four-degree-off-axis double parabolic N+ type 4H-SiC substrate on the back surface is etched, and an N type electrode is formed by adopting amagnetron sputtering process, so as to obtain the 4H-SiC ultraviolet photoelectric detector with the spherical crown structure.

Description

technical field [0001] The invention relates to a semiconductor photodetection device, in particular to a 4H-SiC ultraviolet photodetector with a spherical cap structure and a preparation method. Background technique [0002] Ultraviolet light is a strong electromagnetic wave in nature, which can have a strong impact on most organic and inorganic substances, so it is widely used in military, health, industry, agriculture, environmental protection and many other fields. Correspondingly, ultraviolet light detection devices and products have also attracted the attention of countries all over the world, and have huge market demand. For example, ultraviolet light detectors made into arrays can be used in the precise guidance of missiles, early warning of missiles, etc. Ultraviolet light detectors with high sensitivity also play an extremely important role in environmental monitoring, food disinfection, etc. . At present, the ultraviolet photomultiplier tube (PMT) has mature tec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0312H01L31/18
CPCH01L31/0312H01L31/105H01L31/1804Y02P70/50
Inventor 洪荣墩吴俊慷吴正云
Owner XIAMEN UNIV
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