Yttrium aluminum garnet laser crystal doped growth device, crystal growth furnace and preparation method thereof

A technology of yttrium aluminum garnet and crystal growth furnace, which is applied in crystal growth, single crystal growth, single crystal growth, etc. It can solve the problems of long growth cycle and high production cost, save energy consumption, improve service life and prevent oxidation Effect

Active Publication Date: 2015-01-28
北京雷生强式科技有限责任公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] The existing technology has high production cost and long growth cycle

Method used

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  • Yttrium aluminum garnet laser crystal doped growth device, crystal growth furnace and preparation method thereof
  • Yttrium aluminum garnet laser crystal doped growth device, crystal growth furnace and preparation method thereof
  • Yttrium aluminum garnet laser crystal doped growth device, crystal growth furnace and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0152] An embodiment of the present invention provides a growth device for doped yttrium aluminum garnet crystal, with figure 1 Schematic diagram of the structure of the device. as attached figure 1 As shown, the device includes: a crucible 2, an insulating tube 3 arranged outside the crucible 2, a copper induction heating coil 4 arranged outside the insulating tube 3, and a seed extending into the inside of the crucible 2 through the insulating tube 3. crystal rod 1;

[0153] The bottom of the heat preservation cylinder 3 is provided with a through hole 5, which is used to feed nitrogen into the bottom of the crucible 2; the middle position of the top of the heat preservation cylinder 3 is provided with a first round hole 6 for passing through the seed rod 1 , the diameter of the first circular hole 6 is 140mm. Wherein, the crucible 2 is a tungsten crucible, and the insulation cylinder 3 is made of carbon-doped boron nitride ceramics.

[0154] During the use of the crucib...

Embodiment 2

[0156] An embodiment of the present invention provides a growth device for doped yttrium aluminum garnet crystal, and the growth device has the same structure as the growth device provided in embodiment 1. The difference between the two is that in the device provided in this embodiment, the crucible 2 is a molybdenum crucible, and the diameter of the first circular hole 6 is 90 mm.

Embodiment 3

[0158] An embodiment of the present invention provides a growth device for doped yttrium aluminum garnet crystal, with figure 2 Schematic diagram of the structure of the device. as attached figure 2 As shown, the device includes: a crucible 2, an insulating tube 3 arranged outside the crucible 2, a copper induction heating coil 4 arranged outside the insulating tube 3, and a seed extending into the inside of the crucible 2 through the insulating tube 3. crystal rod 1;

[0159] The bottom of the insulation tube 3 is provided with a through hole 5, which is used to feed nitrogen into the bottom of the crucible 2; the middle position of the top of the insulation tube 3 is provided with a first round hole 6 for passing through the seed rod 1, The diameter of the first circular hole 6 is 140mm.

[0160] The thermal insulation cylinder 3 comprises an inner thermal insulation cylinder 31, a middle thermal insulation cylinder 32 and an outer thermal insulation cylinder 33 connect...

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Abstract

The invention discloses an yttrium aluminum garnet crystal doped growth device, a crystal growth furnace and a preparation method thereof, and belongs to the field of laser crystal preparation. The growth device includes a crucible, a thermal insulation cylinder arranged outside the crucible, a copper crucible induction arranged outside the thermal insulation cylinder and a seed crystal rod passing though the thermal insulation cylinder and extending into the crucible. The bottom of the thermal insulation cylinder is provided with a through hole for introducing nitrogen to the bottom of the crucible; the crucible is tungsten crucible or molybdenum crucible; and the thermal insulation cylinder is made of carbon doped boron nitride ceramics. Through the use of tungsten or molybdenum crucible, production cost is lowered; the carbon doped boron nitride ceramic thermal insulation cylinder carries out heat preservation on the crucible to prevent oxidation of tungsten or molybdenum at high temperature, so as to further reduce the production cost; and the through hole arranged at the bottom of the crucible and the thermal insulation cylinder is used to introduce flowing cooling high pure nitrogen into the bottom of the crucible in the cooling process, and air cooling is used to form an undercooling area at the bottom of the crucible, so as to improve the service life of the crucible and reduce the growth cycle.

Description

technical field [0001] The invention relates to the field of laser crystal preparation, in particular to a growth device, a crystal growth furnace and a preparation method of doped yttrium aluminum garnet crystal. Background technique [0002] Doped yttrium aluminum garnet series laser crystals, especially neodymium-doped yttrium aluminum garnet (Nd:YAG) laser crystals are widely used solid laser working medium materials, and have been widely used in laser cutting, laser welding, laser marking , laser surface cladding, laser additive manufacturing, laser medical treatment, laser beauty, laser ranging, laser guidance and other military and civilian solid-state lasers and corresponding laser equipment and other fields. With the rapid development of solid-state laser technology and its applications, the requirements for the optical uniformity of Nd:YAG crystals are getting higher and higher, while the requirements for its manufacturing cost are getting lower and lower. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B15/00C30B15/10C30B15/14
CPCC30B27/02C30B29/28
Inventor 李兴旺莫小刚张月娟李洪峰杨国利王永国夏士兴
Owner 北京雷生强式科技有限责任公司
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