Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method

A gallium garnet and crystal growth technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as large growth core, small segregation coefficient, and difficulty in meeting application requirements with output wavelength

Active Publication Date: 2009-07-08
ZHONGKE JIUYAO TECH CO LTD
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  • Claims
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Problems solved by technology

However, laser crystals based on YSGG and GSGG also have some disadvantages. For example, some dopant ions such as Nd ions have a small segregation coefficient in YSGG, which makes it relatively difficult to grow laser crystals with uniform optical qualit

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  • Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method
  • Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method
  • Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method

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Embodiment Construction

[0043] 1. Rare earth Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm doped gadolinium yttrium scandium gallium garnet, gadolinium yttrium scandium gallium aluminum garnet, single rare earth doped gadolinium yttrium scandium gallium garnet compound molecular formula can be expressed as RE 3z :Gd 3x+δ Y 3(1-x-z)+δ sc 2+δ′ Ga 3+δ＂ o 12+Δ1 , single rare earth doped gadolinium yttrium scandium gallium aluminum garnet can be expressed as RE 3z :Gd 3x+δ Y 3(1-x-z)+δ sc 2+δ′ Ga 3(1-y)+δ＂ Al 3y+δ＂ o 12+Δ2 , the double rare earth doped gadolinium yttrium scandium gallium garnet molecular formula can be expressed as RE′ 3z′ RE" 3(z-z′) :Gd 3x+δ Y 3(1-x-z)+δ sc 2+δ′ Ga 3+δ＂ o 12+Δ1 , double rare earth doped gadolinium yttrium scandium gallium aluminum garnet can be expressed as RE′ 3z′ RE" 3(z-z′) :Gd 3x+δ Y 3(1-x-z)+δ sc 2+δ′ Ga 3(1-y)+δ＂ Al 3y+δ＂ o 12+Δ2 Among them, RE, RE', RE"=Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm, and in the same material, RE, RE', E" are different, and the value ra...

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Abstract

The invention discloses a doping gadolinium yttrium scandium gallium garnet, a gadolinium yttrium scandium gallium aluminium garnet and a method of the fused mass normal crystal for preparing the gadolinium yttrium scandium gallium garnet and the gadolinium yttrium scandium gallium aluminium garnet crystal or other corresponding compound for preparing; mixing the prepared raw material fully and pressing forming, and becoming initial raw material for crystal growth after high temperature calcination or non high temperature calcination; adding the growth initial raw material into a pot for heating fully to melt and becoming an initial melt of crystal growth with melt method, the obtained crystal can be used as a solid laser working substance.

Description

technical field [0001] The present invention relates to the field of laser materials and crystal growth, and invented rare earth Yb, Nd, Er, Tm, Ho, Pr, Eu, Sm doped doped gadolinium yttrium scandium gallium garnet, gadolinium yttrium scandium gallium aluminum garnet laser materials, And their melt method crystal growth method. technical background [0002] Preparation of high-quality, large-size, and high-efficiency laser crystals is an important topic in the field of solid-state laser technology. Especially in recent years, the development of laser diodes has made great progress in the compact, efficient, reliable, and long-life all-solid-state solid-state laser technology, which has been widely used in many fields and has replaced lamp-pumped solid-state lasers in many fields. Laser has had a profound impact on industrial processing, scientific research, information, medical treatment, photoelectric countermeasures and other fields. [0003] Yttrium scandium gallium gar...

Claims

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Application Information

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IPC IPC(8): C30B29/28
Inventor 张庆礼殷绍唐孙敦陆刘文鹏丁丽华谷长江秦清海李为民
Owner ZHONGKE JIUYAO TECH CO LTD
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