The invention relates to a method for spraying a cracked
selenium source on the surface of a substrate. The method comprises the following steps: entering
selenium steam into a high-temperature
cracking chamber; penetrating the
selenium steam through two
layers of porous grid plates with uniformly distributed pores, the
pore diameter of which is 0.2-0.5mm, in the high-temperature
cracking chamber, so that the selenium source forms cracked selenium source; and spraying the cracked selenium source to the surface of the substrate so as to complete the process of spraying the cracked selenium source on the surface of the substrate. According to the method provided by the invention, the selenium steam is adopted to penetrate through the two
layers of porous grid plates at high temperature, and a large Sen (n is more than or equal to 5)
atomic cluster is cracked to form a small Sen (n is less than 5)
atomic cluster, thereby increasing the quantity of high-activity Se2, improving the reaction activity of a selenium element, effectively improving the film-forming quality of a CIGS (
copper indium gallium selenium) layer of a CIGS film
solar battery and taking an positive effect on improvement of
photoelectric conversion efficiency of the CIGS film
solar battery; and the selenium steam with the small
atomic cluster is directly sprayed to the surface of the substrate through spray orifices, so that a selenium material can sufficiently participate in the reaction film-forming process of the CIGS layer, thereby improving the
utilization rate of the selenium material.