Silicone based dielectric coatings and films for photovoltaic applications

A technology of polysiloxane and dielectric, applied in coatings, circuits, photovoltaic power generation, etc.

Inactive Publication Date: 2006-11-15
DOW CORNING CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dielectric coating has a network structure

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039]In this embodiment, the dielectric high temperature coating is based on a polymethylsilsesquioxane type material. These materials are prepared by hydrolysis / condensation of methyltrichlorosilane or methyltrialkoxysilane.

[0040] To a solution of 20% by weight of silanol functional polymethylsilsesquioxane in MIBK was added 0.1% by weight of tin dioctoate (based on resin solids) as a catalyst. The solution was spread on a stainless steel substrate (the stainless steel substrate was washed with acetone and toluene) using a lab coating scale #4 (R.D. Professional). The coating was cured in air at 100°C for 12 hours and at 200°C for 3 hours. Coatings were characterized by optical microscopy, field emission scanning electron microscopy, atomic force microscopy, profilometry and spectral reflection interferometry. The data shows that the coating is uniform and has very good planarity. The coating had an average thickness of 3.8 microns and an average surface roughness of 0...

Embodiment 2

[0042] In this embodiment, the dielectric high temperature coating is also based on polymethylsilsesquioxane type materials. This resin differs from the resin used in Example 1 in that it contains only a predetermined fraction of the total molecular weight distribution of the starting polymer. This fraction was obtained by solvent precipitation with acetonitrile from the starting bulk polymer in toluene.

Embodiment 3

[0045] In this embodiment, the dielectric high temperature coating is based on a polyhydrosilsesquioxane type material. These materials are produced by hydrolysis / condensation of trichlorosilane (HSiCl) in a mixed solvent system in the presence of surfactants 3 ) or trialkoxysilane, followed by solvent fractionation to separate the special distribution of molecular weight.

[0046] A solution of 20% by weight polyhydrosilsesquioxane in MIBK was coated on a stainless steel substrate (the stainless steel substrate was first washed with acetone and toluene) using a laboratory coating scale #4 (R.D. Professional). The coating was cured at 100°C for 18 hours and at 200°C for 3 hours, then slowly ramped to 400°C at a heating rate of about 2°C / min and held at 400°C for 30 minutes. (In individual experiments when preparing larger samples, the concentration of the solution was adjusted to 18% by weight, and the coating was prepared using lab scale #3. The high temperature step was all...

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Abstract

A dielectric coating for use on a conductive substrate including a silicone composition of the formula: [RxSiO(4-x) / 2]n wherein x=1-4 and wherein R comprises of methyl, or phenyl, or hydrido, or hydroxyl or alkoxy or combination of them (when 1<x<4). R can also comprise other monovalent radicals independently selected from alkyl or aryl groups, arylether, alkylether, alylamide, arylamide, alkylamino and arylamino radicals . The dielectric coating has a network structure. A photovoltaic substrate is also disclosed and includes a conductive material having a dielectric coating disposed on a surface of the conductive material.

Description

technical field [0001] The present invention relates to a kind of polysiloxane based dielectric coating and planarization coating, and the present invention particularly relates to the application of a kind of polysiloxane based dielectric coating in photovoltaic, in thin film transistor (TFT) comprising organic thin film Transistors (OTFTs) and applications in Light Emitting Diodes (LEDs) including Organic Light Emitting Diodes (OLEDs). Background technique [0002] Semiconductor devices often have one or more patterned interconnect levels for electrically connecting individual circuit elements to form an integrated circuit (IC). Interconnect levels are usually separated by an insulating or dielectric coating. Previously, silicon oxide coatings formed by chemical vapor deposition (CVD) or plasma enhanced techniques (PECVD) were the most commonly used materials for this type of dielectric coating. However, the relatively high dielectric constant of this silicon oxide coati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D183/04C08G77/04C09D183/08H01B3/46H01L31/0392
CPCC08G77/04C09D183/04C09D183/08H01B3/46H01L31/02167H01L31/0322Y02E10/541Y10T428/31663
Inventor 季米特里斯·卡佐里斯须藤隆道
Owner DOW CORNING CORP
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