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Multi-junction heterogeneous quantum dot array and manufacturing method thereof and multi-junction heterogeneous quantum dot solar cell and manufacturing method thereof

A technology of solar cells and quantum dots, applied in the field of solar cells, can solve the problems of no obvious increase in conversion efficiency and high annealing temperature, and achieve the effects of low production temperature, simple preparation method and reduced production cost

Active Publication Date: 2014-01-01
SUZHOU XIEXIN INDAL APPL INST
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Problems solved by technology

No significant increase in conversion efficiency
In addition, the annealing temperature is higher than 1000°C, which is unacceptable in the photovoltaic industry

Method used

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  • Multi-junction heterogeneous quantum dot array and manufacturing method thereof and multi-junction heterogeneous quantum dot solar cell and manufacturing method thereof
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  • Multi-junction heterogeneous quantum dot array and manufacturing method thereof and multi-junction heterogeneous quantum dot solar cell and manufacturing method thereof

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Embodiment Construction

[0047] see figure 1 As shown, the multi-junction heterogeneous quantum dot array of the present invention includes layers of silicon quantum dots and germanium quantum dots arranged alternately. Wherein, the quantum dots in the quantum dot array are isolated, and the distance between the quantum dots is 0.5-3nm. The multi-junction heterogeneous quantum dot array can adjust the band gap by interlacing silicon quantum dot layers and germanium quantum dot layers, and increase the generation of multiple excitons by interlacing silicon quantum dot layers and germanium quantum dot layers. Compared with the pure silicon quantum dot array, the bandgap range is increased: from 0.6eV to 2eV (the pure silicon quantum is from 1.1eV to 2eV). This already includes most of the sunlight spectrum, increasing the conversion efficiency from the photon and multi-exciton generation in most of the sunlight spectrum, so that the theoretical conversion efficiency of this solar energy can exceed 50%....

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Abstract

The invention discloses a multi-junction heterogeneous quantum dot array and a manufacturing method of the multi-junction heterogeneous quantum dot array. The multi-junction heterogeneous quantum dot array comprises silicon quantum dot layers and germanium quantum dot layers, the silicon quantum dot layers and the germanium quantum dot layers are arranged in a staggered mode. The multi-junction heterogeneous quantum dot array is simple in manufacturing technology, and can achieve industrialized production and reduce production cost effectively. The invention further discloses a multi-junction heterogeneous quantum dot solar cell made of the multi-junction heterogeneous quantum dot arrays and a manufacturing method of the multi-junction heterogeneous quantum dot solar cell. The multi-junction heterogeneous quantum dot solar cell mainly utilizes rich non-toxic and durable silicon as raw materials on the basis of a current silicon solar energy production line. After the method is performed according to the technical scheme, the conversion efficiency of solar chips will be increased in a breakthrough mode and is larger than 31%, the purpose that the production cost is reduced to be 0.5 dollar / watt is also achieved, and the electricity price holds the line with the power grid electricity prize.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a multi-junction heterogeneous quantum dot array and a preparation method thereof, a multi-junction heterogeneous quantum dot solar cell and a preparation method thereof. Background technique [0002] In 1961, Shockley and Queisser calculated that the highest conversion efficiency of single crystal silicon was 31% based on the assumption that one photon generates a pair of electron-hole pairs. So far, the laboratory conversion efficiency of single crystal silicon has reached 28.8%. Obviously, its development space is very limited. In order to further increase the conversion efficiency, multi-junction solar cells have been developed. It stacks semiconductor materials with different band gaps from top to bottom according to the size of the band gap, so that it can absorb photons of the entire solar spectrum. The laboratory conversion efficiency of III-V semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0725H01L31/0745H01L31/18B82Y30/00
CPCY02E10/50H01L31/035218H01L31/0725H01L31/0745H01L31/1804Y02E10/547Y02P70/50
Inventor 唐晓慧代冰朱共山
Owner SUZHOU XIEXIN INDAL APPL INST
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