Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for contruction of tow-dimension ordered distributing silicon quantum point figurated nano structure

A technology of silicon quantum dots and nanostructures, which is applied in the field of patterned nanostructures of high-density silicon quantum dots, can solve the problems of controllability of nanometer quantum dots size and difficulty in patterning distribution order, and achieve strong controllability Effect

Inactive Publication Date: 2004-03-24
NANJING UNIV
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still great difficulties in the size controllability and distribution order (patterning) of the nano-quantum dots obtained by this approach.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for contruction of tow-dimension ordered distributing silicon quantum point figurated nano structure
  • Method for contruction of tow-dimension ordered distributing silicon quantum point figurated nano structure
  • Method for contruction of tow-dimension ordered distributing silicon quantum point figurated nano structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] 1. Preparation of ultra-thin amorphous silicon (a-Si) film: a-Si:H film was prepared by plasma enhanced chemical vapor deposition (PECVD). The thickness of the a-Si:H layer can be precisely controlled in the range of 1.0-10nm; the size of the quantum dots to be obtained after laser crystallization is basically consistent with the thickness of the a-Si:H layer. Similarly, we can also prepare (a-SiN X :H / a-Si:H / a-SiN X :H) Three-layer sandwich structure, which has a wider application in nanoelectronic devices.

[0024] a-Si:H film and a-SiN X :H / a-Si:H / a-SiN X :H Preparation of three-layer sandwich structure film:

[0025] Using computer-controlled plasma-enhanced chemical vapor deposition (PECVD) technology, using silane (SiH 4 ), ammonia (NH 3 ) and argon (Ar) as the reaction gas source; deposit a-Si:H film or a-SiN on single crystal silicon wafer and double-throw fused quartz or optical glass substrate X :H / a-Si:H / a-SiN X :H three-layer structure film. Concret...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for building two-dimension orderly distributed Si quantum spot graphic nanameter structure is to process a phase-shift grating form board on the film of a-Si or a-SiNx: H / a-Si: H / a-SiNx: H then to crystallize it by laser interference, the laser beam arrives at surfaces of a-Si film or a-SiNx: H / a-Si: H / a -SiNx: H via the form board to form beam spots of two dimension periodic distribution of the energy density to make a -Si: H film to realize localized crystallization, that is to form nanometer Si quantum spot array of two-dimension space orderly distributed in the film.

Description

1. Technical field: [0001] The present invention proposes a new technique for constructing a two-dimensional spatial orderly distributed high-density silicon quantum dot patterned nanostructure by using an excimer ultrashort pulse laser interference crystallization method from two aspects of technical principle and implementation process. The patterned and orderly distributed nano-silicon quantum dot film provided by this technology is a key material in the research of new-generation nano-electronics and nano-optoelectronic devices and other high-tech fields. 2. Background technology: [0002] The integration of nanoelectronics and optoelectronics based on semiconductor quantum structures is the core of the new generation of semiconductor devices in the 21st century and the hardware foundation of modern information technology. Semiconductor silicon (Si) is currently the most important material for preparing microelectronic devices. However, whether Si can continue to play an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00H01L21/00
CPCB82Y30/00
Inventor 陈坤基黄信凡闵乃本骆桂蓬王明湘徐骏李伟
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com