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Controllable quantum dot array preparing method based on photo-thermal effect

A technology of photothermal effect and quantum dots, which is applied in nanotechnology for materials and surface science, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of not being able to balance cost and effect, and achieve low cost and broad application prospects , The effect of simple process

Active Publication Date: 2018-05-04
QINGDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This technology has been applied to the preparation of quantum dot arrays of III-V semiconductor materials, but because its equipment requires ultra-high vacuum and photolithography processes, its preparation cannot take into account the two factors of cost and effect

Method used

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  • Controllable quantum dot array preparing method based on photo-thermal effect

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Experimental program
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Effect test

Embodiment 1

[0022] Step 1, immerse the quartz glass substrate in acetone for 15 minutes for ultrasonic cleaning, ethanol for 10 minutes for ultrasonic cleaning to remove surface impurities, and then take it out. After rinsing with deionized water for 45 seconds, dry the residual moisture with nitrogen gas. Put the treated substrate into the plasma cleaning machine, vacuum to 10 -1 Pa, feed oxygen to 10Pa, wash for 5 minutes and take it out.

[0023] Step 2, placing the cleaned substrate on the sample stage of the ion sputtering device, and then placing the Au metal target on the target stage. Close the sputtering chamber cover and pump the vacuum to about 10Pa, set the ionization current to 3mA, and apply a voltage to the electrode of the ion sputtering device. Deposited on a quartz glass substrate at a high speed. The Au deposition time was controlled to be 50s to obtain a 10nm thick Au film.

[0024] Step 3, move the substrate deposited with the Au film into the annealing furnace, ...

Embodiment 2

[0029] Step 1: Dip the GaN(0001) substrate into acetone and ultrasonically clean it for 15 minutes, and then ultrasonically clean it with ethanol for 10 minutes to remove surface impurities and take it out. After rinsing with deionized water for 45 seconds, dry the residual moisture with nitrogen gas. Put the treated substrate into the plasma cleaning machine, vacuum to 10 -1 Pa, feed oxygen to 10Pa, wash for 5 minutes and take it out.

[0030] Step 2: Place the cleaned substrate on the sample stage of the ion sputtering device, and then place the Ag metal target on the target stage (cathode). Close the sputtering chamber cover and pump the vacuum to about 10Pa, set the ionization current to 3mA, and apply a voltage to the electrode of the ion sputtering device. The speed is deposited on the GaN (0001) substrate. The Ag deposition time was controlled to be 20s to obtain a 5nm thick Ag film. The target material is replaced with metal Pt, and the deposition operation is rep...

Embodiment 3

[0036] Step 1: immerse the Si substrate in acetone for 15 minutes and ultrasonically clean it with ethanol for 10 minutes to remove surface impurities and then take it out. After rinsing with deionized water for 45 seconds, dry the residual moisture with nitrogen gas. Put the processed substrate into the plasma cleaning machine, vacuum to 10 -1 Pa, feed oxygen to 10Pa, wash for 5 minutes and take it out.

[0037] Step 2: Place the cleaned substrate on the sample stage of the ion sputtering device, and then place the Al metal target on the target stage. Close the sputter chamber lid and pull the vacuum to about 10 -4 Pa, enter Ar gas to 10Pa, set the ionization current to 4mA, and apply a voltage on the electrode of the ion sputtering device, after the current is stable, make Al deposited on the substrate at a high speed. The Al deposition time is controlled to be 100s to obtain a 20nm thick Al film.

[0038] Step 3: using a photolithography method to etch the Al thin fil...

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Abstract

The invention discloses a controllable quantum dot array preparing method based on the photo-thermal effect. According to the method, a metal or alloy nanoparticle array serves as a template, the reaction conditions of a quantum dot precursor are controlled through the local surface plasmon thermal effect irritated by a light source, and therefore the preparing site, size and nucleation density ofthe precursor is controlled. The method mainly includes the steps of preprocessing the surface of the substrate, conducting thin-film deposition on surface metal, preparing the metal nanoparticle array, depositing a protecting layer, growing the quantum dot and conducting post-washing on the substrate. The large-area low-cost quantum dot array is prepared through a chemical synthesis method. Themethod can be combined with a semiconductor processing technology, the prepared quantum dot array can be applied for machining and preparing a quantum dot laser device, a single photon light source, asolar cell, a high-efficiency light-emitting diode, a storage and other devices.

Description

technical field [0001] The invention relates to the field of nanomaterial preparation, in particular to a method for preparing a controllable quantum dot array based on photothermal effect. Background technique [0002] Quantum dots are materials at the nanometer level. Due to the quantum size effect, quantum dots can exhibit different physical properties from bulk materials. Semiconductor quantum dots are generally composed of II-VI or III-V elements, and their particle size is generally between 1 and 10nm. Due to the influence of electron-hole quantum confinement, quantum dots usually have discrete energy band structures, and The emission wavelength can be adjusted by size. Growth of precisely controlled arrays of quantum dots is a research focus in many high-performance optical devices today. In various research fields including quantum dot lasers, single-photon light sources, high-efficiency light-emitting diodes, sensitized solar cells, and flat-panel displays, extrem...

Claims

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Application Information

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IPC IPC(8): H01L21/02B82Y30/00
CPCB82Y30/00H01L21/0256H01L21/02601H01L21/02628
Inventor 毛遂唐建国刘继宪李海东朱志军
Owner QINGDAO UNIV
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