51results about How to "High temperature coefficient of resistance" patented technology

The invention discloses a method for preparing a vanadium oxide film by a metal oxidation method, which comprises the following steps of: (1) preparation of a silicon wafer with an Si3N4 layer; (2) preparation of a pure metal vanadium film, wherein the vacuum degree is (5-6)X 10<-4>Pa, the sputtering working pressure is between 1 and 2.0 Pa, and the sputtering time is between 10 and 20 min; and (3) annealing oxidation, wherein the annealing temperature is between 400 and 500 DEG C, and the annealing oxidation time is between 1and 2 hours. The invention provides the method for preparing the vanadium oxide film by the metal oxidation method with easy control and simple process, the resistance temperature coefficient of products reaches more than -3X10<-2>K<-1>, and preparation methods of thevanadium oxide film are developed. The vanadium oxide film is an ideal material for producing heat-sensitive sensors, infrared detectors and infrared imaging devices.

The invention discloses an optical gas sensor. The optical gas sensor comprises a substrate with a first surface and a second surface, a reflection layer arranged on the first surface of the substrate, plural electrode pads which are arranged on the first surface of the substrate and adjacent to the reflection layer, a sensing layer connected to the substrate via the electrode pads, an absorption layer arranged on the sensing layer, a first electrode layer which is arranged on the sensing layer and adjacent to the absorption layer and a second electrode layer arranged on the second surface of the substrate.

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.

A Ni-Zn-O-based heat-sensitive ceramic material and a preparation method thereof, belonging to the field of material science, the main raw material is Ni 2 o 3 and ZnO, the raw materials are wet-mixed by ball milling, washed, and dried to obtain ceramic powder, and the Ni-Zn-O series heat-sensitive ceramic material is obtained by grinding the powder, sieving, dry pressing, and high-temperature sintering . By controlling the Ni / Zn molar ratio and sintering temperature, the heat-sensitive properties of this material system can be tuned. The invention has simple ingredients and process, cheap raw materials, and wide application of materials; in terms of performance, it has high sensitivity index, good linearity of resistance temperature curve, and high temperature coefficient of resistance; simple process components, easy sintering of the system, and easy process Controlling, effectively reducing production costs, has a good implementation prospect.

The invention relates to the field of electronic ceramics and provides a PTCR ceramic material and a preparation method and application thereof. The PTCR ceramic material has a general formula x(BaTiO3)-y(SrTiO3)-(1-x-y)(CaTiO3)+a mol% M+b mol% N, x is greater than or equal to 0.6 and less than or equal to 0.9, y is greater than or equal to 0.1 and less than or equal to 0.4, a is greater than or equal to 0.1 and less than or equal to 1, b is greater than or equal to 0 and less than or equal to 3, the sum of x and y is less than or equal to 1, M represents any one or more of Y2O3, Bi2O3, La2O3, Sm2O3, Nb2O5, Ta2O5 and Sb2O5, and N represents any one or more of MnO2, CuO, Fe2O3, ZrO2, Al2O3, SiO2, TiO2, BN and B2O3. The PTCR ceramic material has the advantages of low Curie temperature, high resistance abrupt change ratio and high resistance temperature coefficient.

The invention discloses a normal temperature NTC thermistor film and a preparation method thereof; the film is made of VO 2 , MgV 2 o 5 A glassy multi-hybrid material as the main component. During the preparation, the reducing metal target and the vanadium pentoxide target are co-sputtered to deposit the thin film on the substrate under high vacuum condition. In particular, the invention utilizes the excellent reduction performance of magnesium atoms to reduce the +5-valent vanadium in the vanadium pentoxide to reduce the +4-valent vanadium to prepare an NTC thin film. By changing the power applied to the magnesium target and the vanadium pentoxide target, the ratio of different components in the film can be adjusted, and at the same time, the thermal hysteresis of the film resistance, temperature rise and fall, and resistivity can also be adjusted. Compared with the traditional method for preparing NTC thin films, the preparation of thin films by the present invention is simpler, faster, more efficient, and compatible with various substrates; the prepared NTC thin films do not require high-temperature annealing, and have good crystallization conditions; and have a high temperature coefficient of resistance at room temperature , small thermal hysteresis width, low film resistivity, high material constant and so on.

The invention relates to a low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and a preparation method thereof. The thin-film material is a V2-x-yMxNyO3 thin film formed on a substrate by using metal vanadium, metal M and metal N as targets, argon serving as a sputtering gas and oxygen serving as a reactant gas and carrying out magnetron sputtering on the targets, wherein x and y are less than 0.2 and greater than 0, the doping element M is W, Mo, Mg, Sb, Bb and / or Al, and the doping element N is Ti, Cr and / or Zn; the thin-film material has a non-heat stagnation resistance-temperature loop in the range from 80K to 225K. The thin-film material is based on a low-cost vanadium trioxide-based thin-film material; the purpose of eliminating a heat stagnation loop of the V2O3 thin film is achieved by adjusting the doping content of the elements on the condition that the thermochromic properties of the thin film are unchanged; the low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material is expected to be applied to a katathermometer or low-temperature space infrared detection.

The invention provides a temperature sensor film which is provided with a patterned metal thin film on a resin film substrate and has high temperature measurement precision. A conductive film (102) for producing a temperature sensor film is provided with a nickel thin film (10) on one main surface of a resin film substrate (50). The nickel thin film preferably has a plane spacing of less than 0.2040 nm between the (111) planes of nickel. A temperature sensor film can be obtained by patterning a nickel film to form a temperature measurement resistor part and a lead part connected to the temperature measurement resistor part.