51results about How to "High temperature coefficient of resistance" patented technology

The invention relates to a rare earth nickel-based perovskite oxide thermistor material for infrared detection and belongs to the field of infrared detection. According to the rare earth nickel-basedperovskite oxide thermistor material for infrared detection, a rare earth nickel-based perovskite oxide insulator phase (or semiconductor phase) having a high resistance temperature coefficient is adopted as a thermistor material in infrared detection technology; methods such as methods for adjusting the types of rare earth elements in the rare earth nickel-based perovskite oxide material, the stress of a rare earth nickel-based material, the stoichiometric ratios of the rare earth element and nickel element of the rare earth nickel-based material are adopted so as to adjust the transformationtemperature of the metal insulator phase of the rare earth nickel-based perovskite oxide thermistor material, and therefore, an infrared detection temperature range can be adjusted; and a rare earthnickel-based perovskite oxide can be combined and integrated with different carrier materials, so that devices can be prepared, and therefore, the detection of infrared signals in the range of 10K to500K can be realized. The earth nickel-based perovskite oxide thermistor material of the invention has considerable application value and broad application prospect in infrared detection, radiation heat micro-metering, temperature detection and sensing.

The invention discloses stainless steel base material-based PTC thermistor paste and a preparation method thereof. The PTC thermistor paste comprises an inorganic bonding phase, a composite functional phase and an organic carrier, wherein the inorganic bonding phase is lead-free microcrystalline glass powder prepared from SiO2, MgO, B2O3, Al2O3, Bi2O3, a rare-earth oxide and a nucleation agent; the composite functional phase is composite powder prepared from micron silver powder, nano silver powder and doped copper ruthenate powder; and the organic carrier is a mixture prepared from an organic solvent, a high-polymer thickener, a dispersing agent, a defoamer and a thixotropic agent. The PTC thermistor paste is high and adjustable in sheet resistance, high and adjustable in resistance temperature coefficient and excellent in printing characteristic and burning characteristic and can be matched with an insulated stainless steel base material. The preparation method sequentially comprises the steps of preparing the inorganic bonding phase, preparing the composite functional phase, preparing the organic carrier and preparing the resistor paste. By the preparation method, the PTC thermistor paste can be effectively produced and prepared.

The invention provides a micro-bolometer based on graphene quantum points. The micro-bolometer comprises a substrate whose middle part is provided with a groove. The graphene quantum points are hanged above the groove and are connected through a graphene strip. Two ends of the graphene strip extend out of a graphene film to cover the substrate at two sides of the groove to form graphene electrodes. The micro-bolometer is characterized in that a hanged island-shaped graphene quantum point array is formed through the micro nano processing technology, the device temperature change in a same incident light power is increased by using the heat insulation effect by groove suspension, the device resistance temperature coefficient is raised by using quantization graphene, and the photoelectric detection is realized based on a micro-bolometer principle. Due to the absorption characteristic of a graphene material in an infrared wave band, the micro-bolometer provided by the invention can be used for the photoelectric detection of middle and far-infrared and terahertz wave bands, and a novel solution is provided for a present infrared photoelectric detector.

The invention discloses a method for preparing a vanadium oxide film by a metal oxidation method, which comprises the following steps of: (1) preparation of a silicon wafer with an Si3N4 layer; (2) preparation of a pure metal vanadium film, wherein the vacuum degree is (5-6)X 10Pa, the sputtering working pressure is between 1 and 2.0 Pa, and the sputtering time is between 10 and 20 min; and (3) annealing oxidation, wherein the annealing temperature is between 400 and 500 DEG C, and the annealing oxidation time is between 1and 2 hours. The invention provides the method for preparing the vanadium oxide film by the metal oxidation method with easy control and simple process, the resistance temperature coefficient of products reaches more than -3X10K, and preparation methods of the vanadium oxide film are developed. The vanadium oxide film is an ideal material for producing heat-sensitive sensors, infrared detectors and infrared imaging devices.

The present invention relates to a current-limiting armored cable. It adopts the new type nickel-iron alloy heating thread, which chemistry element is that Ni:69-72%, Fe:31-28% w. The alloy thread and insulation material MgO powder are encapsulated in Inconel 600, the stainless steel or the nickel pipe to form the limiting current armored cable which diameter span is diameter 1.0-1.5 mm. Moreover the present invention provides a heating component made of the armored cable. The armored cable is machined into the changeable transect heating component, the end of the cable is welding point, and the other end is the sealed down-lead end. The ratio of the heating cable and the heating component is no little than 1.5. It can quickly heat and adjust heating power, increase the work life.

The invention relates to a low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and a preparation method thereof. The thin-film material is a V2-x-yMxNyO3 thin film formed on a substrate by using metal vanadium, metal M and metal N as targets, argon serving as a sputtering gas and oxygen serving as a reactant gas and carrying out magnetron sputtering on the targets, wherein x and y are less than 0.2 and greater than 0, the doping element M is W, Mo, Mg, Sb, Bb and/or Al, and the doping element N is Ti, Cr and/or Zn; the thin-film material has a non-heat stagnation resistance-temperature loop in the range from 80K to 225K. The thin-film material is based on a low-cost vanadium trioxide-based thin-film material; the purpose of eliminating a heat stagnation loop of the V2O3 thin film is achieved by adjusting the doping content of the elements on the condition that the thermochromic properties of the thin film are unchanged; the low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material is expected to be applied to a katathermometer or low-temperature space infrared detection.

A self-monitoring flow-through heater. The heater has a wire inside a tube, and the wire heats and monitors the temperature of a fluid flowing through the tube. The wire has a high specific resistivity and a high temperature coefficient of resistance, so that monitoring the voltage across and/or the current flowing through the wire measures the mean temperature of the wire and of the fluid in the tube.

The invention relates to an infrared bridge type temperature measurement sensor, which comprises a substrate and a resistor bridge consisting of four resistors. The sensor is characterized in that: the resistor bridge has an annular structure formed by connecting a photosensitive resistor, two environmental reference resistors and a joule reference resistor end to end; and the position, where the photosensitive resistor and the joule reference resistor are arranged, of the substrate is provided with a groove. The bridge type structure adopted by the sensor is favorable for reducing the influence of environmental temperature and joule heat on the output signals of the sensor and improving the working adaptability of the sensor; the target temperature can be effectively judged according to the magnitude of the bridge output signals; the sensitivity of the sensor is effectively improved by using the photosensitive resistor, the joule reference resistor and the environmental reference resistors; and the substrate below the photosensitive resistor and the joule reference resistor is provided with the groove structure so as to improve the accuracy of temperature measurement.

The invention relates to a PTC thermal sensitive ceramic material with high Curie temperature. The ceramic material is prepared from the following raw materials in percentage by weight: 86-95% of Ba0.4Pb0.6TiO3, 0.01-2.8% of La2O3, 0.1-4.0% of Si3N4, 0.01-1.5% of CaNb2O6, 0.5-2% of MnSiO3, 0.01-2.5% of Li2O-B2O3-SiO2 glass powder and 0.02-1.5% of LaCrZrO5. The invention also provides a preparation method of the PTC thermal sensitive ceramic material with high Curie temperature. The PTC thermal sensitive ceramic material provided by the invention is high in Curie temperature, low in room temperature resistivity, high in liftdrag ratio, great in temperature coefficient of resistance (alpha) and good in comprehensive thermosensitive performance. The sintering temperature is low during preparation, the cost can be lowered, volatilization of lead is inhibited, and the environment is not polluted.

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.