Rare earth nickel-based perovskite oxide thermistor material for infrared detection

A perovskite oxide and thermistor technology, applied in nickel compounds, thermometers with direct heat-sensitive electric/magnetic elements, measuring heat, etc., can solve the chemical composition and crystal structure complexity of vanadium oxide, etc. question

Active Publication Date: 2019-01-25
UNIV OF SCI & TECH BEIJING
View PDF8 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, it is undeniable that there are still some problems in the existing thermistor materials used in infrared detection.
For example, Ti has a low temperature coefficient of resistance (TCR), while polysilicon and polysilicon germanium thin film thermistors are formed at too high a temperature, which limits their application in monolithic systems
In contrast, although vanadium oxide materials have been applied on a certain scale, due to the high complexity of vanadium oxide in terms of both chemical composition and crystal structure, how to obtain high thermal resistance coefficient is very important in material preparation. There are also huge challenges in the process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare earth nickel-based perovskite oxide thermistor material for infrared detection
  • Rare earth nickel-based perovskite oxide thermistor material for infrared detection
  • Rare earth nickel-based perovskite oxide thermistor material for infrared detection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] use has figure 1 The temperature change relationship of the resistance is shown, such as figure 2 The samarium nickel oxide perovskite oxide (SmNiO 3 ) material as thermistor material, according to Figure 5 The device structure shown is fabricated as an infrared detection device and is adiabatically encapsulated in a germanium window. At room temperature, in SmNiO 3 Pass a current through the thermistor material and read two voltage values. When infrared radiation with a wavelength of 3, 4, and 5 microns is used, the infrared rays are focused and irradiated to SmNiO 3 When the thermistor material is used, due to the local temperature rise of the infrared absorption point, the V R Change 3%, after turning off the IR incident light, V R Return to the original value, so as to realize room temperature detection of infrared signals with a wavelength of 3-5 microns.

Embodiment 2

[0050] use has image 3 The temperature change relationship of the resistance is shown, such as Figure 4 NdNiO perovskite oxide (NdNiO 3 ) material as thermistor material, according to Figure 5 The device structure shown is fabricated as an infrared detection device and is adiabatically encapsulated in a germanium window. Use liquid nitrogen to lower the temperature to 150K, in NdNiO 3 Pass a current through the thermistor material and read two voltage values. When infrared radiation with a wavelength of 3, 4, and 5 microns is used, the infrared rays are focused and irradiated to SmNiO 3 When the thermistor material is used, due to the local temperature rise of the infrared absorption point, the V R Change 2%, after turning off the IR incident light, V R Return to the original value, so as to realize the low-temperature detection of infrared signals.

Embodiment 3

[0052] Europium nickel oxide perovskite oxide (EuNiO 3 ) material as thermistor material, according to Figure 5 The device structure shown is fabricated as an infrared detection device and is adiabatically encapsulated in a germanium window. At room temperature, in EuNiO 3Pass a current through the thermistor material and read two voltage values. When the infrared radiation with a wavelength of 3-5 microns is used to focus and irradiate the EuNiO 3 When the thermistor material is used, due to the local temperature rise of the infrared absorption point, the V R Change 4%, after turning off the IR incident light, V R Return to the original value, so as to realize the room temperature detection of the infrared signal.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
phase transition temperatureaaaaaaaaaa
Login to view more

Abstract

The invention relates to a rare earth nickel-based perovskite oxide thermistor material for infrared detection and belongs to the field of infrared detection. According to the rare earth nickel-basedperovskite oxide thermistor material for infrared detection, a rare earth nickel-based perovskite oxide insulator phase (or semiconductor phase) having a high resistance temperature coefficient is adopted as a thermistor material in infrared detection technology; methods such as methods for adjusting the types of rare earth elements in the rare earth nickel-based perovskite oxide material, the stress of a rare earth nickel-based material, the stoichiometric ratios of the rare earth element and nickel element of the rare earth nickel-based material are adopted so as to adjust the transformationtemperature of the metal insulator phase of the rare earth nickel-based perovskite oxide thermistor material, and therefore, an infrared detection temperature range can be adjusted; and a rare earthnickel-based perovskite oxide can be combined and integrated with different carrier materials, so that devices can be prepared, and therefore, the detection of infrared signals in the range of 10K to500K can be realized. The earth nickel-based perovskite oxide thermistor material of the invention has considerable application value and broad application prospect in infrared detection, radiation heat micro-metering, temperature detection and sensing.

Description

technical field [0001] The invention belongs to the fields of micro-area thermal disturbance detection, microradiation heat measurement and infrared detection, and in particular relates to a rare-earth nickel-based perovskite oxide thermistor applied to infrared detection. Background technique [0002] The development of thermistor materials with high temperature coefficient of resistance (TCR) is of great significance and value for the accurate characterization of thermal disturbances in micro-regions and further detection of micro-thermal radiation signals such as infrared rays [1-25]. Uncooled infrared detection technology applied near room temperature is mainly based on converting invisible infrared radiation into measurable electrical signals. It is related to pyroelectric detection, microbolometer, thermopile and high temperature tube, liquid mercury meter with thermal expansion and contraction effect, uncooled infrared detection of quartz resonator whose resonance fre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/22G01J5/20C01G53/00
CPCC01G53/00C01P2002/34G01J5/20G01K7/22
Inventor 陈吉堃胡海洋张秀兰姜勇
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap