A kind of normal temperature NTC thermistor thin film and preparation method thereof

Abstract

The invention discloses a normal temperature NTC thermistor film and a preparation method thereof; the film is made of VO 2 , MgV 2 o 5 A glassy multi-hybrid material as the main component. During the preparation, the reducing metal target and the vanadium pentoxide target are co-sputtered to deposit the thin film on the substrate under high vacuum condition. In particular, the invention utilizes the excellent reduction performance of magnesium atoms to reduce the +5-valent vanadium in the vanadium pentoxide to reduce the +4-valent vanadium to prepare an NTC thin film. By changing the power applied to the magnesium target and the vanadium pentoxide target, the ratio of different components in the film can be adjusted, and at the same time, the thermal hysteresis of the film resistance, temperature rise and fall, and resistivity can also be adjusted. Compared with the traditional method for preparing NTC thin films, the preparation of thin films by the present invention is simpler, faster, more efficient, and compatible with various substrates; the prepared NTC thin films do not require high-temperature annealing, and have good crystallization conditions; and have a high temperature coefficient of resistance at room temperature , small thermal hysteresis width, low film resistivity, high material constant and so on.

Description

technical field [0001] The invention relates to the field of functional materials, in particular to a normal temperature NTC thermistor film and a preparation method thereof; especially to a VO 2 , MgV 2 o 5 A normal-temperature NTC thermistor film as a main component and a preparation method thereof. Background technique [0002] NTC thermistor is a thermistor with a negative temperature coefficient, and the resistance value characteristic is that it decreases with the increase of temperature. Since 1940, it has been found that some transition metal oxides are mixed according to a certain proportion, and after molding and sintering, semiconductors with a large negative temperature coefficient of resistance can be obtained. The temperature coefficient of resistance of such oxide semiconductors is - (1-6)% / °C range. [0003] In recent years, there are many studies on NTC materials, some with zinc oxide as the main material, and some with manganese oxide as the main mater...

AI Technical Summary

Problems solved by technology

plus VO 2 The film itself has a phase change thermal hysteresis of about 3°C, so it cannot be directly applied to the field of infrared measurement

Although doping other metal elements can adjust the phase transition temperature and adjust the phase transition temperature close to room temperature, but at the same time it will greatly reduce the TCR value and affect the performance of the film

Images