90results about "Resistive material coating" patented technology

The invention belongs to the technical field of high-voltage electric appliance material preparation, and particularly relates to a zinc oxide resistor disc and a preparation method and application thereof. The preparation method comprises the following steps: (1) pre-sintering zinc oxide powder; (2) mixing the zinc oxide powder obtained in the step (1), an auxiliary agent and a dispersion liquid, and carrying out ball milling to obtain slurry; the particle size D50 of the slurry is 0.8-1.2 [mu] m, and the dispersity is greater than or equal to 95%; (3) performing spray drying and granulation on the slurry to obtain granulation powder; (4) carrying out molding and first sintering on the granulated powder to obtain a resistor disc semi-finished product; the first sintering adopts sectional sintering; and (5) forming an electrode layer on at least one surface of the resistor disc semi-finished product by adopting a vacuum sputtering and / or electrophoretic deposition process, and performing secondary sintering and annealing. The contact resistance of the zinc oxide resistor disc is less than or equal to 5m omega; and after 1000 hours of aging in a 85 DEG C + 85% RH environment, the leakage current increase is less than or equal to 2 [mu] A, and the performance degradation rate is less than or equal to 5%.

The present invention relates to a sensor comprising a ceramic substrate (1) and two metallization layers (2) applied on opposite surfaces of the ceramic substrate (1), each having an adhesion layer (2A) applied directly onto the ceramic substrate (1) and a gold layer (2B) applied on each adhesion layer (2A). Furthermore, the present invention relates to a method for manufacturing the sensor.

The invention provides a thermosensitive resistor and a manufacturing method. The thermosensitive resistor comprises a substrate, electrodes and a protective layer, the matrix is prepared from a nano-scale ceramic powder and high-molecular polymer composite material, the nano-scale ceramic powder is uniformly dispersed in a high-molecular polymer, and the high-molecular polymer is polyimide; the electrode is made of an alloy material composed of silver, palladium and rare earth elements, and the electrode is deposited on the surface of the base body through the physical vapor deposition technology. The protective layer wraps the surfaces of the base body and the electrodes, the protective layer is composed of a multi-layer composite material, and the multi-layer composite material comprises an inner layer, a middle layer and an outer layer. Compared with a traditional product, the size is greatly reduced, the development requirement for miniaturization of electronic equipment is met, meanwhile, the layering failure problem caused by thermal expansion under large-current impact is effectively prevented, and the stability of product performance is guaranteed.

The utility model provides a chip resistor. The chip resistor comprises a substrate, a back electrode, a front electrode, a resistive layer, a protective layer and a side electrode, the protective layer comprises a first protective layer and a second protective layer; the first protective layer is made of a glass material, and the second protective layer is made of at least two layers of epoxy resin materials; a third protective layer is formed on the left electrode and the right electrode which are not covered, and the third protective layer is made of a resin silver material; through a multi-layer protection structure formed by the first protection layer made of the glass material and the second protection layer made of the epoxy resin material, invasion of moisture, chemical corrosion and mechanical damage is effectively prevented, the service life of the resistor in a severe environment is remarkably prolonged, and particularly, through the third protection layer made of the resin silver material, the service life of the resistor is prolonged. The anti-corrosion performance of the electrode part is enhanced, so that the resistor can keep stable electrical performance during long-time work.

The application relates to the field of high-precision resistor devices, in particular to a film-coated resistor and a processing method thereof. The film-coated resistor comprises a ceramic substrate, the left and right ends of the ceramic substrate are integrally formed with cylindrical parts, a nickel-chromium alloy film is deposited on the ceramic substrate, a sleeve is sleeved on each cylindrical part, and a metal sheet is arranged on each sleeve. The processing method comprises the following steps: S1, ultrasonic cleaning of the ceramic substrate with deionized water to remove oil stains, dust and impurities on the surface, and then drying for standby; S2, placing the nickel-chromium alloy into a storage pot, and fixing the ceramic substrate on four clamping rods in an evaporation box; S3, covering a cover plate on the evaporation box, and performing air extraction on the inside of the evaporation box to form a low-pressure state; and S4, driving a resistance heating ring to heat the nickel-chromium alloy in the storage pot, so that the nickel-chromium alloy evaporates and diffuses in a gaseous form.

A method for applying a coating to at least one electronic component is described comprising the following steps:A) Providing a coating arrangement (1) comprising a coating roller (2), wherein the coating roller (2) is rotatable around a rotation axis (R);B) Providing a coating material (3) on the coating roller (2);C) Providing at least one electronic component (10);D) Moving the at least one electronic component (10) along the rotating coating roller (3) to obtain a coating (12) of at least a part of the electronic component (10).Moreover, a coating arrangement (1) for applying a coating (12) to at least one electronic component (10) is described.

The invention relates to the technical field of thin film resistors, in particular to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor and the metal film resistor. The invention relates to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor, which comprises the following steps: carrying out magnetron sputtering treatment on the surface of a base material by using a target material and adopting a magnetron sputtering method; the magnetron sputtering treatment comprises the following reaction steps: performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen or oxygen as reaction gas, and forming a first metal resistive film on the surface of the base material; performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen and / or oxygen as reaction gas, and forming a second metal resistive film above the first metal resistive film; according to the metal film resistor prepared from the treated base material, the temperature coefficient TCR of the metal film resistor in a wide temperature range from-55 DEG C to 125 DEG C meets the following conditions: the TCR difference value in a positive temperature range is 0-5 ppm / DEG C; and the absolute value of the TCR difference value of the positive and negative temperature zones is less than or equal to 5ppm / DEG C.

The invention relates to a resistor (1) with a conductive material layer (3) made of a conductive material, a resistive material layer (2) made of a resistive material and joined to the conductive material layer (3), and with a groove (4) having a specific groove width (b), a specific groove depth (t) and a specific groove flank angle relative to the plane of the conductive material layer (3), wherein the groove (4) is arranged in the conductive material layer (3) and separates the conductive material layer (3) into two connection parts (5, 6) and projects into the resistive material layer (2). According to the invention, the groove flank angle is set such that the temperature coefficient of the resistance value is as close as possible to zero. The invention also relates to an associated production method.

The invention relates to the technical field of electronic components, in particular to a high-moisture-proof multi-layer resistor and a preparation method of the high-moisture-proof multi-layer resistor. The resistor comprises an aluminum oxide substrate, a front electrode, a back electrode and a resistance layer between the front electrode and the back electrode; a first protective layer made of glass, a second protective layer which correspondingly covers the laser cutting line groove and is made of thermosetting ink, a third protective layer and a fourth protective layer which are made of at least two layers of epoxy resin, and a fifth protective layer which is positioned at the lap joint of the electrode and the protective layer and is made of resin silver are sequentially laminated on the resistive layer; the outer side of the electrode is provided with a nickel-plated layer and a tin-plated layer which extends and is lapped to the surface of the fourth protective layer; the preparation method comprises the steps of printing and sintering each functional layer and forming each protective layer in a targeted manner. According to the invention, through a multi-layer synergetic sealing structure, especially enhanced protection of a laser groove and an electrode interface, and epitaxial lap joint of a metal coating, excellent moisture resistance, long-term electrical stability and high reliability are realized, and the device is suitable for a harsh environment.

The invention discloses an electrode for a low-cost high-surge-resistance thermistor chip and a preparation method thereof, the electrode comprises a substrate, a composite barrier layer, a silver seed layer, a thick film electrode layer and an anti-oxidation layer, and the thick film electrode layer is made of copper. The NTC thermistor is manufactured through substrate pretreatment, composite barrier layer sputtering, silver seed layer sputtering, thick film electrode preparation, surface activation treatment and anti-oxidation treatment, and has the advantages that a high-resistance transition layer is eliminated, the contact resistance is stable, and the circulation requirement of the power type NTC thermistor is completely met; the copper paste is low in cost, low in electrode porosity, high in through-flow density, capable of bearing surge current, free of ablation, capable of working for more than 1000 hours under steady-state through-flow and low in contact resistance amplification, reducing atmosphere sintering can adapt to transformation of an existing thick film production line, the magnetron sputtering process is free of extra equipment investment, and direct large-scale mass production can be achieved.

The invention relates to the technical field of resistors, in particular to a resistance device and a manufacturing method thereof. The resistance device comprises a base body, a resistive film and a terminal electrode, the base body is of a cylinder structure, and the resistive film wraps the outer surface of the base body; the outer ring of the resistive film is provided with a spiral groove, and the outer surface of the resistive film is provided with a protective layer; according to the resistance device and the manufacturing method thereof, line contact between the end electrode and the PCB is converted into surface contact through the arranged limiting surface, and the surface contact mode provides resistance for rolling of the resistance device. Moreover, the gravity center of the resistor device can be adjusted to a low position through the arranged counterweight part, and when the limiting surface is not in a downward state, the limiting surface can automatically rotate to a downward state under the combined action of the counterweight part and the circular section of the end electrode, so that on one hand, the rolling phenomenon of the resistor device is avoided, and on the other hand, the states of the resistor device before and after mounting are consistent, and the mounting efficiency is improved. And the orientation of the limiting surface does not need to be adjusted during mounting.

The invention relates to the technical field of piezoresistors, in particular to a piezoresistor disc and a preparation method thereof.The piezoresistor disc comprises two electrodes and a ceramic substrate arranged between the two electrodes, and a plurality of transition layers are arranged at the contact positions of the ceramic substrate and the electrodes; the materials of the transition layers are obtained by doping silver powder with different mass fractions on the basis of ceramic base powder used for sintering the ceramic matrix, and the mass fractions of the silver powder in the multiple transition layers are gradually increased from the side close to the ceramic matrix to the side close to the electrode, so that gradient transition from the ceramic matrix material to the electrode material in component is formed. When the temperature changes, the thermal expansion difference between the adjacent transition layers can be obviously reduced, stress concentration generated at the interface due to the fact that the thermal expansion coefficient difference of two materials is too large in a traditional structure is avoided, and therefore the possibility that interface resistance changes after long-time use is reduced.

A positive temperature coefficient ceramic thermistor element having strong reducing atmosphere resistance and a preparation method therefor, the thermistor element comprising a sintered thermosensitive ceramic piece that uses lead barium titanate as a base, as well as metal ohmic electrodes which are positioned on two side surfaces of the thermosensitive ceramic piece. The thermistor element has the following features: the thermistor element further comprises a microporous channel barrier layer, and the microporous channel barrier layer comprises a glass sealing layer or an organic matter sealant; when the microporous channel barrier layer is the glass sealing layer, the glass sealing layer integrally wraps the outer surface of the thermosensitive ceramic piece, and the metal ohmic electrodes are combined on two side surfaces of the glass sealing layer; and when the microporous channel barrier layer is the organic matter sealant, the organic matter sealant fills and blocks micro-pores in the surfaces of the metal ohmic electrodes combined on the two side surfaces of the thermosensitive ceramic piece and, at the same time, blocks gaps in the surfaces of areas, that do not have the metal ohmic electrodes, of a peripheral edge of the thermosensitive ceramic piece. Thus, resistance to harsh environments is improved, service life is prolonged, and the reliability and expected service requirements of related heating groups are improved.

The invention relates to a chip resistor preparation method based on magnetron sputtering and low-temperature heat treatment. The chip resistor preparation method comprises the following steps: respectively preparing a surface electrode and a back electrode on the front and back surfaces of a substrate; a resistance layer is sputtered on the front face of the substrate, the sputtering power density is 0.05 W / mm < 2 >, the sputtering time is 30 min to 2 h, the temperature of a target material is smaller than or equal to 200 DEG C during sputtering, and the temperature of the substrate is smaller than or equal to 180 DEG C; performing low-temperature heat treatment on the resistance layer under the protection of inert gas, wherein the temperature of the low-temperature heat treatment is 350 + / -5 DEG C; after the resistance value of the resistive layer is adjusted through laser cutting, a protective layer is prepared on the surface of the resistive layer; and preparing a side surface electrode on the side surface of the substrate, so that the surface electrode is electrically connected with the back electrode. Through temperature control of the target material and the substrate during sputtering, an optimized initial condition is provided for film growth, a film with a more ideal stress state and a more ideal microstructure is formed, and through a subsequent low-temperature heat treatment process, a resistive layer is recovered to an alloy phase and the activation energy of a manganese element is improved, so that the qualitative improvement of the film performance is cooperatively realized.

The application relates to the field of thin-film resistors, and discloses a flexible precision thin-film resistor and a manufacturing method thereof. The manufacturing method of the flexible precision thin-film resistor comprises the following steps: performing oxidation treatment on a silicon substrate to form an insulating layer on the surface of the silicon substrate; forming a resistor layer and an electrode layer on the insulating layer; performing pattern treatment on the resistor layer to form a resistor pattern; performing laser resistance adjustment on the resistor pattern to adjust the resistance value of the resistor pattern; forming a flexible protective layer on the resistor pattern after the resistance adjustment; and performing thinning treatment on the silicon substrate. The silicon substrate is used as a resistor substrate, the substrate is thinned to 15 microns after the resistor layer and the protective layer are formed, the product has excellent flexibility, and is suitable for flexible circuits; the nickel-chromium alloy is selected as the resistor layer, vacuum sputtering and heat treatment are combined, the temperature coefficient is less than or equal to 10 ppm / DEG C in the range of -40 DEG C to 70 DEG C; the polyimide flexible protective layer is adopted, protection is achieved, and the bending performance is not affected; the resistance value precision is less than or equal to 0.02% through laser resistance adjustment, and the high-precision requirement is met.

The utility model provides a three-dimensional arch-shaped ignition resistor element, which comprises a substrate, an alloy layer, a to-be-burnt object accommodating part and a side guide layer, the alloy layer is arranged on a first surface of the substrate, the alloy layer comprises an arch-shaped lead, a first connecting part and a second connecting part, the to-be-burnt object accommodating part is limited between the arch-shaped lead and the substrate, and the side guide layer is arranged on a second surface of the substrate. The arc-shaped lead defines the volume of a to-be-burnt object in the to-be-burnt object containing part, the side guide layer is arranged on the alloy layer and abuts against the side surface of the base plate, and the three-dimensional arc-shaped ignition resistor element is configured to reduce the ignition distance and / or increase the contact area with the to-be-burnt object and / or increase the contact area with the to-be-burnt object.

The invention relates to a method for producing a resistor arrangement (1) comprising the following method steps: a) providing a substrate (2) made of a conducting material, b) applying a resistor material (3) to the substrate (2) by means of an additive method so that a resistor element (31) is formed, c) separating the substrate (2) so that at least two separate connection elements (21, 22) that are physically separated from one another are formed from the substrate (2) for connecting the resistor arrangement (1) to an external circuit.

The invention discloses a preparation method of a stable low-temperature-coefficient thin film resistor and the thin film resistor, and relates to the technical field of chip type film fixed resistor manufacturing technologys.The preparation method comprises the steps of target material selection, sputtering operation, heat treatment and resistance value adjustment and test.According to the method, the stable low-temperature-coefficient thin film resistor is obtained by carefully selecting and treating the target material and optimizing the sputtering technology; according to the present invention, the extremely low sensitivity of the resistance value of the resistor to the temperature change is achieved, the thin film resistor with the stable low temperature coefficient can be prepared by using the preparation method of the present invention, the resistance value change of the resistor is extremely small during the temperature change, the stability and the reliability of the electronic device are improved, and the method of the present invention is simple, feasible and easy for industrial production.

The invention discloses a plasma ignition resistor device and a preparation method thereof, and the preparation method comprises the steps: carrying out the bonding treatment of a substrate and a calendered metal foil, and then carrying out the pressing treatment to obtain a composite substrate; carrying out photo-sensitive resist coating, exposure, development and etching treatment on the composite substrate to obtain a substrate containing a bridge foil circuit; carrying out electrode electroplating treatment on the surface of the bridge foil circuit substrate to obtain a substrate containing a terminal electrode; and then stacking energy-gathered guide holes right above the bridge foil to obtain a plasma ignition device integrated substrate with the energy-gathered guide holes, and then cutting and grading the integrated substrate to obtain the plasma ignition resistor device. The technical problems that a traditional semiconductor bridge ignition device and a plasma ignition device without an energy gathering guide hole are insufficient in ignition distance and poor in ignition reliability are solved, and the comprehensive technical effects of low energy consumption, high efficiency and long-distance reliable ignition are achieved.

A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, electrically conductive first and second leads connected to the first and second electrodes, respectively, and an arc mitigating, flame retarding coating covering the MOV chip, the first and second electrodes, and portions of the first and second leads, the arc mitigating, flame retarding coating comprising a silicone composition formed of a filler material suspended in a silicone resin, wherein the filler material includes one or more of melamine, guanidine, guanine, hydantoin, allantoin, urea, melamine-formaldehyde, melamine-cyanurate polymer, and boric acid.

A method for producing a polymeric compound with a positive temperature coefficient (PPTC) and for conformally applying such a compound to a substrate according to an embodiment of the present disclosure may include producing and mixing raw materials to form a PPTC mixture, processing the PPTC mixture by a polymer compounding plant, wherein the PPTC mixture is heated and extruded as a PPTC compound, performing a radiation process on the polymer compound to produce cross-linking between the polymer chains in the PPTC compound, and applying the PPTC compound to a substrate using a hot application process in which the PPTC compound is heated and conformally applied to a surface of the substrate.

The invention discloses a manufacturing method of a small-size high-power-capacity thin-film high-frequency resistor, and belongs to the technical field of resistors. The manufacturing method comprises the following steps: designing the layout of a resistor plane unit array on a diamond substrate; manufacturing a photoetching mask of each functional layer; performing laser drilling and scribing on the diamond substrate; chemically cleaning the carbonized diamond and residues; a thin film sputtering resistance layer; sputtering a surface metal electrode layer and a side metal electrode layer by a thin film; manufacturing a side electrode layer; photoetching to form a front surface electrode pattern, a back surface electrode pattern and a resistive layer pattern; carrying out substrate film heat treatment; the invention relates to resistor chip segmentation. The problems that in the prior art, diamond deposition and substrate etching are complex in technology and difficult to achieve are solved; in the prior art, laser cutting enables the surface of diamond to be carbonized, and residual carbonized layers and chips after processing are difficult to remove, so that a metalized area is seriously polluted, and the performance of a resistance layer is deteriorated. The method can be widely applied to the technical field of electronic components with diamond substrates as substrates.

The application belongs to the technical field of ceramic resistance, and particularly relates to a linear zinc oxide ceramic resistance, a preparation method thereof and a circuit board. The linear zinc oxide ceramic resistance is prepared by applying a direct current voltage in a preparation process, so that a crystal boundary barrier formed in a sintering process is destroyed, the product, the zinc oxide ceramic resistance, has good linear characteristics, and thus the linear zinc oxide ceramic resistance is prepared, thereby solving the technical problem that a process for preparing the zinc oxide linear ceramic resistance is relatively complex in the prior art.

The present invention provides a composite substrate and a circuit board. The composite substrate includes a first resistance layer and a base layer. The first resistance layer is laminated on at least one surface of the base layer. The surface of the base layer facing the first resistance layer has a plurality of protrusions. The surface roughness Ra of the base layer having the protrusions is 0.5 μm to 5 μm, and the number of protrusions is 0.1×10 3 pieces / mm to 3×10 3 pieces / mm. Due to the above limitations, the uniformity of the first resistance layer deposited on the surface of the base layer is improved, thereby improving the sheet resistance uniformity of the first resistance layer, which is useful for the manufacture of high-precision embedded resistors and beneficial to the performance of circuit boards and even electronic components.

This resistor comprises an insulating substrate, a resistance element, and a pair of upper surface electrodes. The resistance element is provided on the insulating substrate. The pair of upper surface electrodes are provided apart from each other on the resistance element. The resistance element includes Cr, Si, N, and O. The atomic percentage of O in the resistance element is greater than 10 atom% and equal to or less than 30 atom% at least in the center of the resistance element in the film thickness direction thereof.

The invention belongs to the technical field of electronic components, and particularly relates to a ceramic piezoresistor and a preparation method and application thereof. The ceramic varistor comprises a ceramic substrate and a copper-based electrode formed on the surface of the ceramic substrate, the copper-based electrode comprises a metal transition layer, a copper layer, an aluminum layer, a DLC layer and a resin layer which are sequentially arranged on the ceramic substrate, and the ceramic varistor is specifically prepared by the following steps: firstly, preparing the metal transition layer on the substrate through a direct current magnetron sputtering coating process; preparing a copper layer and an aluminum layer in sequence through a high-power pulse magnetron sputtering process, preparing a DLC surface layer on the surface of the aluminum layer by adopting a plasma enhanced chemical vapor deposition technology, and finally coating the DLC layer with a resin layer. All the layers are matched with one another, so that the obtained ceramic varistor finally realizes collaborative optimization of various performances.

The invention provides a plating solution flow mode design for a large-area chemical plating uniform nickel-phosphorus alloy resistive film, which comprises a chemical plating solution additive formula, a plating bath design and plating solution flow process parameters, and aims to improve the stability of the plating solution and reduce the surface tension of the plating solution, thereby improving the resistance uniformity of the nickel-phosphorus alloy resistive film. The method is suitable for aerospace, electronic circuit and other industries.

This invention relates to a composite copper foil for embedded thin-film resistors, its preparation method, and its application. The composite copper foil is constructed by sputtering resistive layers onto both sides of a carrier dielectric layer, and then forming conductive copper layers on the resistive layers, thus forming a composite structure consisting of a first conductive copper layer, a first resistive layer, a carrier dielectric layer, a second resistive layer, and a second conductive copper layer. The composite copper foil of this invention exhibits excellent overall performance and surface roughness, and possesses stable sheet resistance. It can be used in the manufacture of flexible embedded thin-film resistor PCBs and has promising application prospects.

Composition for a sensor element (10) comprising Y2O3, Al2O3, MnO2, NiO and Fe2O3 and further ZrO2, and intended to be used in a temperature sensor (1), wherein a molar concentration of Zr used in the composition for the sensor element (10) is 0.2-0.5, and wherein a molar concentration of the metallic elements yttrium, aluminium, manganese, nickel and iron used in the composition for the sensor element (10) is accordingly 0.2-0.5, 0.01-0.1, 0.1-0.3, 0.1-0.3 and 0.03-0.1.

A high power thin film resistor includes a substrate, a resistor layer, an inner electrode layer, a passivation layer and a heat conducting layer. The resistor layer is disposed above the substrate, wherein the inner electrode layer has a middle electrode region and two end electrode regions; the inner electrode layer is disposed above the resistor layer, wherein the inner electrode layer has a middle inner electrode region and two end inner electrode regions, dividing the resistor layer into the middle electrode region and the two end electrode regions; the passivation layer covers part of the resistor layer and the inner electrode layer; and the heat conducting layer is disposed above the passivation layer, wherein the heat conducting layer has two heat conducting bodies and a gap between the two heat conducting bodies, and the two heat conducting bodies respectively contact the two end inner electrode regions of the inner electrode layer. The middle electrode region and the two end electrode regions form a series resistor, and the two end electrode regions have the same resistance. In this way, the heat generated by the resistor layer can be evenly distributed throughout the high power thin film resistor, and most of the heat can be directly conducted to the external circuit by the two end inner electrode regions of the inner electrode layer.