181results about "Resistive material coating" patented technology

The invention belongs to the field of semiconductor bridge current protection, and particularly relates to a semiconductor bridge current protection method based on a vanadium dioxide thick film thermistor. Firstly, copper, nickel and gold interdigital electrodes are deposited and grown on an aluminum oxide ceramic substrate, then a methanol solution of vanadyl acetylacetonate is sprayed on the surface of the heated interdigital electrode, a vanadium dioxide thermistor device is obtained, the vanadium dioxide thermistor device is connected with a semiconductor bridge in parallel, and current protection of the semiconductor bridge thermistor is achieved. Vanadium dioxide with a single valence state can be synthesized by adjusting the synthesis method and process, M-phase vanadium dioxide is synthesized on the interdigital electrode in one step, the vanadium dioxide prepared by the method avoids the tedious process that vanadium dioxide powder is firstly prepared and then transplanted to the surface of the interdigital electrode, and the preparation method is simple and convenient to operate. And the vanadium dioxide can be more stably combined on the surface of the interdigital electrode.

The invention relates to the technical field of lightning arrester manufacturing, in particular to a method for recycling micro powder for MOA piezoresistor ceramics. The method comprises the following steps: S1) testing the residual amounts of a dispersing agent and a binding agent in the micro powder for the MOA piezoresistor ceramic, and respectively recording the residual amounts as x and y; s2) mixing the micro powder with water, a binding agent and a dispersing agent to obtain slurry; the mass ratio of the micro powder to the water to the binding agent to the dispersing agent is 4000: 2000: (600-y): (20-x); and S3) granulating the slurry until the slurry contains water, and molding to obtain the resistor disc. The method provided by the invention not only reduces the loss of the micro powder, but also improves the utilization rate of the raw materials.

A resistor includes a substrate, a pair of inner electrodes, a thin-film resistive layer, a pair of backside electrodes, and a thick-film resistive layer. The substrate includes a first surface and a second surface opposite to the first surface. The pair of inner electrodes is disposed on two opposite ends of the first surface, respectively. The thin-film resistive layer is disposed on the first surface and contacts the pair of inner electrodes, wherein the thin-film resistive layer has a first resistance value and includes a trimming groove. The pair of backside electrodes is disposed on two opposite ends of the second surface, respectively. The thick-film resistive layer is disposed on the second surface and contacts the pair of backside electrodes, wherein the thick-film resistive layer has a second resistance value, and the second resistance value is greater than 100 times of the first resistance value.

The invention relates to the technical field of curved antenna processing, and discloses a curved antenna structure and a preparation method thereof. The preparation method of the curved surface antenna structure comprises the following steps: dividing a plurality of to-be-processed areas on the surface of a curved surface substrate; acquiring surface height information of the to-be-processed area; dividing the to-be-processed area into a plurality of fitting areas; according to the obtained surface height information, conductive metal slurry is printed in a fitting area of the curved-surface substrate to form antenna units, and the multiple antenna units are fitted to form a single antenna pattern; a resistance structure is formed between adjacent antenna patterns. According to the method, firstly, the curved surface substrate is divided into the multiple to-be-processed areas, the surface height information of each to-be-processed area is obtained, then the to-be-processed areas are divided into the multiple fitting areas, and then according to the obtained surface height information, conductive metal slurry filling is carried out with the small fitting areas as basic units, so that the application of intermediary materials is saved, and the machining efficiency is improved. Damage to the base material is avoided, and high conformal and reliable connection with the curved surface substrate is achieved.

The invention discloses a non-contact in-situ manufacturing method of a curved surface conformal resistor. The method comprises the following steps: firstly, carrying out resistance test verification according to manufacturing conditions such as a target resistance value demand and a pin gap, and selecting a resistor paste; path planning is carried out on the piezoelectric spraying device, so that resistance paste spraying liquid drops are accurately deposited to the designated position of the curved surface substrate; carrying out in-situ infrared drying curing and laser sintering functionalization on the printed curved surface conformal resistor; the manufacturing precision of the curved surface conformal resistor is improved through a laser resistance trimming method; and packaging the piezoelectric jet resistor protection layer on the surface of the curved surface conformal resistor. Based on the characteristics of jet printing, complicated path planning and nozzle interference risks of contact printing of the curved surface conformal resistor can be avoided, and meanwhile, the problem of material limitation in the manufacturing process of a high-temperature-resistant resistor material can be solved through laser sintering, so that the problem of stable manufacturing of the curved surface conformal resistor on any curved surface is solved.

The invention belongs to the technical field of high-voltage electric appliance material preparation, and particularly relates to a zinc oxide resistor disc and a preparation method and application thereof. The preparation method comprises the following steps: (1) pre-sintering zinc oxide powder; (2) mixing the zinc oxide powder obtained in the step (1), an auxiliary agent and a dispersion liquid, and carrying out ball milling to obtain slurry; the particle size D50 of the slurry is 0.8-1.2 [mu] m, and the dispersity is greater than or equal to 95%; (3) performing spray drying and granulation on the slurry to obtain granulation powder; (4) carrying out molding and first sintering on the granulated powder to obtain a resistor disc semi-finished product; the first sintering adopts sectional sintering; and (5) forming an electrode layer on at least one surface of the resistor disc semi-finished product by adopting a vacuum sputtering and / or electrophoretic deposition process, and performing secondary sintering and annealing. The contact resistance of the zinc oxide resistor disc is less than or equal to 5m omega; and after 1000 hours of aging in a 85 DEG C + 85% RH environment, the leakage current increase is less than or equal to 2 [mu] A, and the performance degradation rate is less than or equal to 5%.

A method for applying a coating to at least one electronic component is described comprising the following steps: A) Providing a coating arrangement (1) comprising a coating roller (2), wherein the coating roller (2) is rotatable around a rotation axis (R); B) Providing a coating material (3) on the coating roller (2); C) Providing at least one electronic component (10); D) Moving the at least one electronic component (10) along the rotating coating roller (3) to obtain a coating (12) of at least a part of the electronic component (10). Moreover, a coating arrangement (1) for applying a coating (12) to at least one electronic component (10) is described.

Multilayer component (100) comprising an inert ceramic substrate (1) and at least one functional ceramic (2), wherein the functional ceramic (2) is completely enclosed by the ceramic substrate (1), wherein the functional ceramic (2) comprises a varistor, an NTC ceramic, a PTC ceramic or a ferrite, wherein the multilayer component (100) comprises a plurality of functional ceramics (2), and wherein the functional ceramics (2) have different expansion coefficients and / or different sintering temperatures.

The present invention relates to a sensor comprising a ceramic substrate (1) and two metallization layers (2) applied on opposite surfaces of the ceramic substrate (1), each having an adhesion layer (2A) applied directly onto the ceramic substrate (1) and a gold layer (2B) applied on each adhesion layer (2A). Furthermore, the present invention relates to a method for manufacturing the sensor.

The invention provides a thermosensitive resistor and a manufacturing method. The thermosensitive resistor comprises a substrate, electrodes and a protective layer, the matrix is prepared from a nano-scale ceramic powder and high-molecular polymer composite material, the nano-scale ceramic powder is uniformly dispersed in a high-molecular polymer, and the high-molecular polymer is polyimide; the electrode is made of an alloy material composed of silver, palladium and rare earth elements, and the electrode is deposited on the surface of the base body through the physical vapor deposition technology. The protective layer wraps the surfaces of the base body and the electrodes, the protective layer is composed of a multi-layer composite material, and the multi-layer composite material comprises an inner layer, a middle layer and an outer layer. Compared with a traditional product, the size is greatly reduced, the development requirement for miniaturization of electronic equipment is met, meanwhile, the layering failure problem caused by thermal expansion under large-current impact is effectively prevented, and the stability of product performance is guaranteed.

The present invention discloses a method for preparing a thick film resistor based on a TGV process, and relates to the field of integrated circuits. The method comprises: exposing the positions of the thick film resistor cavity and the conductor grooves to be printed on the initial substrate to obtain a first substrate, baking the first substrate and then performing a first anisotropic wet etching to obtain a second substrate; laser drilling the second substrate and performing a second anisotropic wet etching to obtain a third substrate, and metal filling the third substrate; printing the thick film resistor on a transfer substrate and performing a flexible transfer printing; depositing an aluminum nitride passivation layer on the surface of the third substrate; high-temperature sintering the third substrate; after sintering, photolithographically opening windows on the aluminum nitride passivation layer at the surface pad position to deposit the surface pad. The present invention can reduce the delay time and transmission loss of electrical signals, while avoiding the deviation of the resistance value when printing thick film resistors on double-sided ceramic substrates, thereby reducing time and money costs.

The utility model provides a chip resistor. The chip resistor comprises a substrate, a back electrode, a front electrode, a resistive layer, a protective layer and a side electrode, the protective layer comprises a first protective layer and a second protective layer; the first protective layer is made of a glass material, and the second protective layer is made of at least two layers of epoxy resin materials; a third protective layer is formed on the left electrode and the right electrode which are not covered, and the third protective layer is made of a resin silver material; through a multi-layer protection structure formed by the first protection layer made of the glass material and the second protection layer made of the epoxy resin material, invasion of moisture, chemical corrosion and mechanical damage is effectively prevented, the service life of the resistor in a severe environment is remarkably prolonged, and particularly, through the third protection layer made of the resin silver material, the service life of the resistor is prolonged. The anti-corrosion performance of the electrode part is enhanced, so that the resistor can keep stable electrical performance during long-time work.

The invention relates to a method for applying a coating to at least one electronic component, comprising the following steps: A) providing a coating device (1) comprising a coating roller (2), the coating roller (2) being rotatable about an axis of rotation (R); b) providing a coating material (3) on the coating roller (2); c) providing at least one electronic component (10); d) moving the at least one electronic component (10) along the rotating coating roller (3) in order to obtain a coating (12) of at least a portion of the electronic component (10). Furthermore, a coating device (1) for applying a coating (12) to at least one electronic component (10) is described.

The application relates to the field of high-precision resistor devices, in particular to a film-coated resistor and a processing method thereof. The film-coated resistor comprises a ceramic substrate, the left and right ends of the ceramic substrate are integrally formed with cylindrical parts, a nickel-chromium alloy film is deposited on the ceramic substrate, a sleeve is sleeved on each cylindrical part, and a metal sheet is arranged on each sleeve. The processing method comprises the following steps: S1, ultrasonic cleaning of the ceramic substrate with deionized water to remove oil stains, dust and impurities on the surface, and then drying for standby; S2, placing the nickel-chromium alloy into a storage pot, and fixing the ceramic substrate on four clamping rods in an evaporation box; S3, covering a cover plate on the evaporation box, and performing air extraction on the inside of the evaporation box to form a low-pressure state; and S4, driving a resistance heating ring to heat the nickel-chromium alloy in the storage pot, so that the nickel-chromium alloy evaporates and diffuses in a gaseous form.

A method for applying a coating to at least one electronic component is described comprising the following steps:A) Providing a coating arrangement (1) comprising a coating roller (2), wherein the coating roller (2) is rotatable around a rotation axis (R);B) Providing a coating material (3) on the coating roller (2);C) Providing at least one electronic component (10);D) Moving the at least one electronic component (10) along the rotating coating roller (3) to obtain a coating (12) of at least a part of the electronic component (10).Moreover, a coating arrangement (1) for applying a coating (12) to at least one electronic component (10) is described.

The invention relates to the technical field of thin film resistors, in particular to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor and the metal film resistor. The invention relates to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor, which comprises the following steps: carrying out magnetron sputtering treatment on the surface of a base material by using a target material and adopting a magnetron sputtering method; the magnetron sputtering treatment comprises the following reaction steps: performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen or oxygen as reaction gas, and forming a first metal resistive film on the surface of the base material; performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen and / or oxygen as reaction gas, and forming a second metal resistive film above the first metal resistive film; according to the metal film resistor prepared from the treated base material, the temperature coefficient TCR of the metal film resistor in a wide temperature range from-55 DEG C to 125 DEG C meets the following conditions: the TCR difference value in a positive temperature range is 0-5 ppm / DEG C; and the absolute value of the TCR difference value of the positive and negative temperature zones is less than or equal to 5ppm / DEG C.

A multilayer varistor includes a sintered body, an internal electrode disposed in the sintered body, a high-resistance layer covering at least part of the sintered body, and an external electrode covering part of the high-resistance layer, the external electrode being electrically connected to the internal electrode. An arithmetic mean roughness of a surface of the high-resistance layer is greater than or equal to 0.06 μm.

The invention relates to a manufacturing method for an electrical resistor (1), in particular for a low-resistance current measuring resistor, comprising the following steps:Provision of a flat support element (2) made of a conductor material,Provision of a flat resistor element (3) made of a resistor material,applying the flat resistor element (3) to the upper side of the support element (2) with an electrically insulating layer (4) between the resistor element (3) and the support element (2), andcontacting the resistor element (3) by means of two contact caps (8, 9) made of a conductive material, the two contact caps (8, 9) resting directly on the upper side of the resistor element (3) and enclosing a specific distance (d) between them directly on the upper side of the flat resistor element (3) along the direction of current flow in the resistor (1), andSpecification of a desired resistance value of the resistor (1).The manufacturing method according to the invention is characterised by the following step:Adjusting the resistance value of the resistor (1) by setting the distance (d) between the contact caps (8, 9) directly on the upper side of the resistor element (3), wherein the distance (d) is set as a function of the desired resistance value.

The invention relates to an embedded resistance thin film material with an extremely low resistance temperature coefficient, the material comprises a substrate, an insertion layer and a resistance layer, the embedded resistance thin film material with the extremely low resistance temperature coefficient is deposited on the substrate by adopting a sputtering method, and the embedded resistance material with the extremely low resistance temperature coefficient is obtained by changing the annealing temperature. The temperature coefficient of the resistor can be increased by 38 times at most, the thermal stability of the embedded resistor thin film material is improved, and then the embedded resistor thin film material which is wide in application range, high in repeatability, simple in process and easy to control in the preparation process is obtained.

The invention relates to a resistor (1) with a conductive material layer (3) made of a conductive material, a resistive material layer (2) made of a resistive material and joined to the conductive material layer (3), and with a groove (4) having a specific groove width (b), a specific groove depth (t) and a specific groove flank angle relative to the plane of the conductive material layer (3), wherein the groove (4) is arranged in the conductive material layer (3) and separates the conductive material layer (3) into two connection parts (5, 6) and projects into the resistive material layer (2). According to the invention, the groove flank angle is set such that the temperature coefficient of the resistance value is as close as possible to zero. The invention also relates to an associated production method.

The invention relates to the technical field of electronic components, in particular to a high-moisture-proof multi-layer resistor and a preparation method of the high-moisture-proof multi-layer resistor. The resistor comprises an aluminum oxide substrate, a front electrode, a back electrode and a resistance layer between the front electrode and the back electrode; a first protective layer made of glass, a second protective layer which correspondingly covers the laser cutting line groove and is made of thermosetting ink, a third protective layer and a fourth protective layer which are made of at least two layers of epoxy resin, and a fifth protective layer which is positioned at the lap joint of the electrode and the protective layer and is made of resin silver are sequentially laminated on the resistive layer; the outer side of the electrode is provided with a nickel-plated layer and a tin-plated layer which extends and is lapped to the surface of the fourth protective layer; the preparation method comprises the steps of printing and sintering each functional layer and forming each protective layer in a targeted manner. According to the invention, through a multi-layer synergetic sealing structure, especially enhanced protection of a laser groove and an electrode interface, and epitaxial lap joint of a metal coating, excellent moisture resistance, long-term electrical stability and high reliability are realized, and the device is suitable for a harsh environment.

The invention discloses an electrode for a low-cost high-surge-resistance thermistor chip and a preparation method thereof, the electrode comprises a substrate, a composite barrier layer, a silver seed layer, a thick film electrode layer and an anti-oxidation layer, and the thick film electrode layer is made of copper. The NTC thermistor is manufactured through substrate pretreatment, composite barrier layer sputtering, silver seed layer sputtering, thick film electrode preparation, surface activation treatment and anti-oxidation treatment, and has the advantages that a high-resistance transition layer is eliminated, the contact resistance is stable, and the circulation requirement of the power type NTC thermistor is completely met; the copper paste is low in cost, low in electrode porosity, high in through-flow density, capable of bearing surge current, free of ablation, capable of working for more than 1000 hours under steady-state through-flow and low in contact resistance amplification, reducing atmosphere sintering can adapt to transformation of an existing thick film production line, the magnetron sputtering process is free of extra equipment investment, and direct large-scale mass production can be achieved.

The invention relates to the technical field of resistors, in particular to a resistance device and a manufacturing method thereof. The resistance device comprises a base body, a resistive film and a terminal electrode, the base body is of a cylinder structure, and the resistive film wraps the outer surface of the base body; the outer ring of the resistive film is provided with a spiral groove, and the outer surface of the resistive film is provided with a protective layer; according to the resistance device and the manufacturing method thereof, line contact between the end electrode and the PCB is converted into surface contact through the arranged limiting surface, and the surface contact mode provides resistance for rolling of the resistance device. Moreover, the gravity center of the resistor device can be adjusted to a low position through the arranged counterweight part, and when the limiting surface is not in a downward state, the limiting surface can automatically rotate to a downward state under the combined action of the counterweight part and the circular section of the end electrode, so that on one hand, the rolling phenomenon of the resistor device is avoided, and on the other hand, the states of the resistor device before and after mounting are consistent, and the mounting efficiency is improved. And the orientation of the limiting surface does not need to be adjusted during mounting.

The present application relates to a thin film resistor with a through via, wherein a device including a thin film resistor (TFR) structure is disclosed. The TFR structure is accessible through one or more conductive vias, which extend vertically from an upper metal layer to completely penetrate the TFR layer located therebelow. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the penetration site. The TFR structure can be manufactured by a method comprising the steps of etching a through-hole trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the through-hole trench with a conductor coupled to the sidewalls of the TFR layer.

The invention relates to the technical field of piezoresistors, in particular to a piezoresistor disc and a preparation method thereof.The piezoresistor disc comprises two electrodes and a ceramic substrate arranged between the two electrodes, and a plurality of transition layers are arranged at the contact positions of the ceramic substrate and the electrodes; the materials of the transition layers are obtained by doping silver powder with different mass fractions on the basis of ceramic base powder used for sintering the ceramic matrix, and the mass fractions of the silver powder in the multiple transition layers are gradually increased from the side close to the ceramic matrix to the side close to the electrode, so that gradient transition from the ceramic matrix material to the electrode material in component is formed. When the temperature changes, the thermal expansion difference between the adjacent transition layers can be obviously reduced, stress concentration generated at the interface due to the fact that the thermal expansion coefficient difference of two materials is too large in a traditional structure is avoided, and therefore the possibility that interface resistance changes after long-time use is reduced.

The invention provides a thin-film resistor and a manufacturing method thereof. The thin-film resistor comprises a substrate with a plurality of grooves, a first terminal electrode, a second terminal electrode, a resistance layer, an electrostatic protection layer and an electrostatic electrode layer arranged on the resistance layer. The first terminal electrode and the second terminal electrode are respectively arranged on two end parts of the upper surface of the substrate. The resistive layer and the electrostatic protection layer are arranged on the upper surface of the substrate, the electrostatic protection layer is arranged to be adjacent to one side of the resistive layer, the electrostatic protection layer comprises a first part and a second part which are separated from each other, and at least one of the first part and the second part is provided with a tip part. Therefore, static electricity can be prevented from flowing into the resistive layer, and moisture is prevented from permeating into the thin-film resistor.

A positive temperature coefficient ceramic thermistor element includes a sintered thermosensitive ceramic piece that uses lead barium titanate as a base, as well as metal ohmic electrodes which are positioned on two side surfaces of the thermosensitive ceramic piece. The thermistor element has a microporous channel barrier layer, and includes a glass sealing layer which wraps the outer surface of the thermosensitive ceramic piece, or an organic matter sealant which fills and blocks micro-pores in the surfaces of the metal ohmic electrodes combined on the two side surfaces of the thermosensitive ceramic piece and, at the same time, blocks gaps in the surfaces of areas, that do not have the metal ohmic electrodes, of a peripheral edge of the thermosensitive ceramic piece.

A positive temperature coefficient ceramic thermistor element having strong reducing atmosphere resistance and a preparation method therefor, the thermistor element comprising a sintered thermosensitive ceramic piece that uses lead barium titanate as a base, as well as metal ohmic electrodes which are positioned on two side surfaces of the thermosensitive ceramic piece. The thermistor element has the following features: the thermistor element further comprises a microporous channel barrier layer, and the microporous channel barrier layer comprises a glass sealing layer or an organic matter sealant; when the microporous channel barrier layer is the glass sealing layer, the glass sealing layer integrally wraps the outer surface of the thermosensitive ceramic piece, and the metal ohmic electrodes are combined on two side surfaces of the glass sealing layer; and when the microporous channel barrier layer is the organic matter sealant, the organic matter sealant fills and blocks micro-pores in the surfaces of the metal ohmic electrodes combined on the two side surfaces of the thermosensitive ceramic piece and, at the same time, blocks gaps in the surfaces of areas, that do not have the metal ohmic electrodes, of a peripheral edge of the thermosensitive ceramic piece. Thus, resistance to harsh environments is improved, service life is prolonged, and the reliability and expected service requirements of related heating groups are improved.

The invention relates to a chip resistor preparation method based on magnetron sputtering and low-temperature heat treatment. The chip resistor preparation method comprises the following steps: respectively preparing a surface electrode and a back electrode on the front and back surfaces of a substrate; a resistance layer is sputtered on the front face of the substrate, the sputtering power density is 0.05 W / mm < 2 >, the sputtering time is 30 min to 2 h, the temperature of a target material is smaller than or equal to 200 DEG C during sputtering, and the temperature of the substrate is smaller than or equal to 180 DEG C; performing low-temperature heat treatment on the resistance layer under the protection of inert gas, wherein the temperature of the low-temperature heat treatment is 350 + / -5 DEG C; after the resistance value of the resistive layer is adjusted through laser cutting, a protective layer is prepared on the surface of the resistive layer; and preparing a side surface electrode on the side surface of the substrate, so that the surface electrode is electrically connected with the back electrode. Through temperature control of the target material and the substrate during sputtering, an optimized initial condition is provided for film growth, a film with a more ideal stress state and a more ideal microstructure is formed, and through a subsequent low-temperature heat treatment process, a resistive layer is recovered to an alloy phase and the activation energy of a manganese element is improved, so that the qualitative improvement of the film performance is cooperatively realized.

The invention provides an electronic component and a film forming method. The electronic component includes an element (20), an external electrode covering a portion of an outer surface (21) of the element (20), and a protective film (30) of alumina. The protective film (30) is located between the green body (20) and the external electrode. The thickness of the protective film (30) in the direction perpendicular to the outer surface (21) of the green body (20) is set as the film thickness (TP). The protective film (30) is viewed in a cross-section orthogonal to the outer surface (21) of the element (20) in a cross-section at a location covered by the external electrode. When the average value and the standard deviation of the film thickness (TP) are determined within a range of 1 [mu] m in the direction along the outer surface (21) of the green body (20), the ratio of the standard deviation to the average value is 0.4 or more.