60results about "Resistive material coating" patented technology

The invention belongs to the technical field of high-voltage electric appliance material preparation, and particularly relates to a zinc oxide resistor disc and a preparation method and application thereof. The preparation method comprises the following steps: (1) pre-sintering zinc oxide powder; (2) mixing the zinc oxide powder obtained in the step (1), an auxiliary agent and a dispersion liquid, and carrying out ball milling to obtain slurry; the particle size D50 of the slurry is 0.8-1.2 [mu] m, and the dispersity is greater than or equal to 95%; (3) performing spray drying and granulation on the slurry to obtain granulation powder; (4) carrying out molding and first sintering on the granulated powder to obtain a resistor disc semi-finished product; the first sintering adopts sectional sintering; and (5) forming an electrode layer on at least one surface of the resistor disc semi-finished product by adopting a vacuum sputtering and / or electrophoretic deposition process, and performing secondary sintering and annealing. The contact resistance of the zinc oxide resistor disc is less than or equal to 5m omega; and after 1000 hours of aging in a 85 DEG C + 85% RH environment, the leakage current increase is less than or equal to 2 [mu] A, and the performance degradation rate is less than or equal to 5%.

The invention provides a thermosensitive resistor and a manufacturing method. The thermosensitive resistor comprises a substrate, electrodes and a protective layer, the matrix is prepared from a nano-scale ceramic powder and high-molecular polymer composite material, the nano-scale ceramic powder is uniformly dispersed in a high-molecular polymer, and the high-molecular polymer is polyimide; the electrode is made of an alloy material composed of silver, palladium and rare earth elements, and the electrode is deposited on the surface of the base body through the physical vapor deposition technology. The protective layer wraps the surfaces of the base body and the electrodes, the protective layer is composed of a multi-layer composite material, and the multi-layer composite material comprises an inner layer, a middle layer and an outer layer. Compared with a traditional product, the size is greatly reduced, the development requirement for miniaturization of electronic equipment is met, meanwhile, the layering failure problem caused by thermal expansion under large-current impact is effectively prevented, and the stability of product performance is guaranteed.

A method for applying a coating to at least one electronic component is described comprising the following steps:A) Providing a coating arrangement (1) comprising a coating roller (2), wherein the coating roller (2) is rotatable around a rotation axis (R);B) Providing a coating material (3) on the coating roller (2);C) Providing at least one electronic component (10);D) Moving the at least one electronic component (10) along the rotating coating roller (3) to obtain a coating (12) of at least a part of the electronic component (10).Moreover, a coating arrangement (1) for applying a coating (12) to at least one electronic component (10) is described.

The invention relates to the technical field of thin film resistors, in particular to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor and the metal film resistor. The invention relates to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor, which comprises the following steps: carrying out magnetron sputtering treatment on the surface of a base material by using a target material and adopting a magnetron sputtering method; the magnetron sputtering treatment comprises the following reaction steps: performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen or oxygen as reaction gas, and forming a first metal resistive film on the surface of the base material; performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen and / or oxygen as reaction gas, and forming a second metal resistive film above the first metal resistive film; according to the metal film resistor prepared from the treated base material, the temperature coefficient TCR of the metal film resistor in a wide temperature range from-55 DEG C to 125 DEG C meets the following conditions: the TCR difference value in a positive temperature range is 0-5 ppm / DEG C; and the absolute value of the TCR difference value of the positive and negative temperature zones is less than or equal to 5ppm / DEG C.

The invention relates to a resistor (1) with a conductive material layer (3) made of a conductive material, a resistive material layer (2) made of a resistive material and joined to the conductive material layer (3), and with a groove (4) having a specific groove width (b), a specific groove depth (t) and a specific groove flank angle relative to the plane of the conductive material layer (3), wherein the groove (4) is arranged in the conductive material layer (3) and separates the conductive material layer (3) into two connection parts (5, 6) and projects into the resistive material layer (2). According to the invention, the groove flank angle is set such that the temperature coefficient of the resistance value is as close as possible to zero. The invention also relates to an associated production method.

The invention relates to the technical field of electronic components, in particular to a high-moisture-proof multi-layer resistor and a preparation method of the high-moisture-proof multi-layer resistor. The resistor comprises an aluminum oxide substrate, a front electrode, a back electrode and a resistance layer between the front electrode and the back electrode; a first protective layer made of glass, a second protective layer which correspondingly covers the laser cutting line groove and is made of thermosetting ink, a third protective layer and a fourth protective layer which are made of at least two layers of epoxy resin, and a fifth protective layer which is positioned at the lap joint of the electrode and the protective layer and is made of resin silver are sequentially laminated on the resistive layer; the outer side of the electrode is provided with a nickel-plated layer and a tin-plated layer which extends and is lapped to the surface of the fourth protective layer; the preparation method comprises the steps of printing and sintering each functional layer and forming each protective layer in a targeted manner. According to the invention, through a multi-layer synergetic sealing structure, especially enhanced protection of a laser groove and an electrode interface, and epitaxial lap joint of a metal coating, excellent moisture resistance, long-term electrical stability and high reliability are realized, and the device is suitable for a harsh environment.

The invention discloses an electrode for a low-cost high-surge-resistance thermistor chip and a preparation method thereof, the electrode comprises a substrate, a composite barrier layer, a silver seed layer, a thick film electrode layer and an anti-oxidation layer, and the thick film electrode layer is made of copper. The NTC thermistor is manufactured through substrate pretreatment, composite barrier layer sputtering, silver seed layer sputtering, thick film electrode preparation, surface activation treatment and anti-oxidation treatment, and has the advantages that a high-resistance transition layer is eliminated, the contact resistance is stable, and the circulation requirement of the power type NTC thermistor is completely met; the copper paste is low in cost, low in electrode porosity, high in through-flow density, capable of bearing surge current, free of ablation, capable of working for more than 1000 hours under steady-state through-flow and low in contact resistance amplification, reducing atmosphere sintering can adapt to transformation of an existing thick film production line, the magnetron sputtering process is free of extra equipment investment, and direct large-scale mass production can be achieved.

The invention relates to the technical field of piezoresistors, in particular to a piezoresistor disc and a preparation method thereof.The piezoresistor disc comprises two electrodes and a ceramic substrate arranged between the two electrodes, and a plurality of transition layers are arranged at the contact positions of the ceramic substrate and the electrodes; the materials of the transition layers are obtained by doping silver powder with different mass fractions on the basis of ceramic base powder used for sintering the ceramic matrix, and the mass fractions of the silver powder in the multiple transition layers are gradually increased from the side close to the ceramic matrix to the side close to the electrode, so that gradient transition from the ceramic matrix material to the electrode material in component is formed. When the temperature changes, the thermal expansion difference between the adjacent transition layers can be obviously reduced, stress concentration generated at the interface due to the fact that the thermal expansion coefficient difference of two materials is too large in a traditional structure is avoided, and therefore the possibility that interface resistance changes after long-time use is reduced.

The invention relates to a chip resistor preparation method based on magnetron sputtering and low-temperature heat treatment. The chip resistor preparation method comprises the following steps: respectively preparing a surface electrode and a back electrode on the front and back surfaces of a substrate; a resistance layer is sputtered on the front face of the substrate, the sputtering power density is 0.05 W / mm < 2 >, the sputtering time is 30 min to 2 h, the temperature of a target material is smaller than or equal to 200 DEG C during sputtering, and the temperature of the substrate is smaller than or equal to 180 DEG C; performing low-temperature heat treatment on the resistance layer under the protection of inert gas, wherein the temperature of the low-temperature heat treatment is 350 + / -5 DEG C; after the resistance value of the resistive layer is adjusted through laser cutting, a protective layer is prepared on the surface of the resistive layer; and preparing a side surface electrode on the side surface of the substrate, so that the surface electrode is electrically connected with the back electrode. Through temperature control of the target material and the substrate during sputtering, an optimized initial condition is provided for film growth, a film with a more ideal stress state and a more ideal microstructure is formed, and through a subsequent low-temperature heat treatment process, a resistive layer is recovered to an alloy phase and the activation energy of a manganese element is improved, so that the qualitative improvement of the film performance is cooperatively realized.

The application relates to the field of thin-film resistors, and discloses a flexible precision thin-film resistor and a manufacturing method thereof. The manufacturing method of the flexible precision thin-film resistor comprises the following steps: performing oxidation treatment on a silicon substrate to form an insulating layer on the surface of the silicon substrate; forming a resistor layer and an electrode layer on the insulating layer; performing pattern treatment on the resistor layer to form a resistor pattern; performing laser resistance adjustment on the resistor pattern to adjust the resistance value of the resistor pattern; forming a flexible protective layer on the resistor pattern after the resistance adjustment; and performing thinning treatment on the silicon substrate. The silicon substrate is used as a resistor substrate, the substrate is thinned to 15 microns after the resistor layer and the protective layer are formed, the product has excellent flexibility, and is suitable for flexible circuits; the nickel-chromium alloy is selected as the resistor layer, vacuum sputtering and heat treatment are combined, the temperature coefficient is less than or equal to 10 ppm / DEG C in the range of -40 DEG C to 70 DEG C; the polyimide flexible protective layer is adopted, protection is achieved, and the bending performance is not affected; the resistance value precision is less than or equal to 0.02% through laser resistance adjustment, and the high-precision requirement is met.

The invention relates to a method for producing a resistor arrangement (1) comprising the following method steps: a) providing a substrate (2) made of a conducting material, b) applying a resistor material (3) to the substrate (2) by means of an additive method so that a resistor element (31) is formed, c) separating the substrate (2) so that at least two separate connection elements (21, 22) that are physically separated from one another are formed from the substrate (2) for connecting the resistor arrangement (1) to an external circuit.

The invention discloses a preparation method of a stable low-temperature-coefficient thin film resistor and the thin film resistor, and relates to the technical field of chip type film fixed resistor manufacturing technologys.The preparation method comprises the steps of target material selection, sputtering operation, heat treatment and resistance value adjustment and test.According to the method, the stable low-temperature-coefficient thin film resistor is obtained by carefully selecting and treating the target material and optimizing the sputtering technology; according to the present invention, the extremely low sensitivity of the resistance value of the resistor to the temperature change is achieved, the thin film resistor with the stable low temperature coefficient can be prepared by using the preparation method of the present invention, the resistance value change of the resistor is extremely small during the temperature change, the stability and the reliability of the electronic device are improved, and the method of the present invention is simple, feasible and easy for industrial production.

A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, electrically conductive first and second leads connected to the first and second electrodes, respectively, and an arc mitigating, flame retarding coating covering the MOV chip, the first and second electrodes, and portions of the first and second leads, the arc mitigating, flame retarding coating comprising a silicone composition formed of a filler material suspended in a silicone resin, wherein the filler material includes one or more of melamine, guanidine, guanine, hydantoin, allantoin, urea, melamine-formaldehyde, melamine-cyanurate polymer, and boric acid.

A method for producing a polymeric compound with a positive temperature coefficient (PPTC) and for conformally applying such a compound to a substrate according to an embodiment of the present disclosure may include producing and mixing raw materials to form a PPTC mixture, processing the PPTC mixture by a polymer compounding plant, wherein the PPTC mixture is heated and extruded as a PPTC compound, performing a radiation process on the polymer compound to produce cross-linking between the polymer chains in the PPTC compound, and applying the PPTC compound to a substrate using a hot application process in which the PPTC compound is heated and conformally applied to a surface of the substrate.

The invention discloses a manufacturing method of a small-size high-power-capacity thin-film high-frequency resistor, and belongs to the technical field of resistors. The manufacturing method comprises the following steps: designing the layout of a resistor plane unit array on a diamond substrate; manufacturing a photoetching mask of each functional layer; performing laser drilling and scribing on the diamond substrate; chemically cleaning the carbonized diamond and residues; a thin film sputtering resistance layer; sputtering a surface metal electrode layer and a side metal electrode layer by a thin film; manufacturing a side electrode layer; photoetching to form a front surface electrode pattern, a back surface electrode pattern and a resistive layer pattern; carrying out substrate film heat treatment; the invention relates to resistor chip segmentation. The problems that in the prior art, diamond deposition and substrate etching are complex in technology and difficult to achieve are solved; in the prior art, laser cutting enables the surface of diamond to be carbonized, and residual carbonized layers and chips after processing are difficult to remove, so that a metalized area is seriously polluted, and the performance of a resistance layer is deteriorated. The method can be widely applied to the technical field of electronic components with diamond substrates as substrates.

The application belongs to the technical field of ceramic resistance, and particularly relates to a linear zinc oxide ceramic resistance, a preparation method thereof and a circuit board. The linear zinc oxide ceramic resistance is prepared by applying a direct current voltage in a preparation process, so that a crystal boundary barrier formed in a sintering process is destroyed, the product, the zinc oxide ceramic resistance, has good linear characteristics, and thus the linear zinc oxide ceramic resistance is prepared, thereby solving the technical problem that a process for preparing the zinc oxide linear ceramic resistance is relatively complex in the prior art.

The invention belongs to the technical field of electronic components, and particularly relates to a ceramic piezoresistor and a preparation method and application thereof. The ceramic varistor comprises a ceramic substrate and a copper-based electrode formed on the surface of the ceramic substrate, the copper-based electrode comprises a metal transition layer, a copper layer, an aluminum layer, a DLC layer and a resin layer which are sequentially arranged on the ceramic substrate, and the ceramic varistor is specifically prepared by the following steps: firstly, preparing the metal transition layer on the substrate through a direct current magnetron sputtering coating process; preparing a copper layer and an aluminum layer in sequence through a high-power pulse magnetron sputtering process, preparing a DLC surface layer on the surface of the aluminum layer by adopting a plasma enhanced chemical vapor deposition technology, and finally coating the DLC layer with a resin layer. All the layers are matched with one another, so that the obtained ceramic varistor finally realizes collaborative optimization of various performances.

The invention provides a plating solution flow mode design for a large-area chemical plating uniform nickel-phosphorus alloy resistive film, which comprises a chemical plating solution additive formula, a plating bath design and plating solution flow process parameters, and aims to improve the stability of the plating solution and reduce the surface tension of the plating solution, thereby improving the resistance uniformity of the nickel-phosphorus alloy resistive film. The method is suitable for aerospace, electronic circuit and other industries.

This invention relates to a composite copper foil for embedded thin-film resistors, its preparation method, and its application. The composite copper foil is constructed by sputtering resistive layers onto both sides of a carrier dielectric layer, and then forming conductive copper layers on the resistive layers, thus forming a composite structure consisting of a first conductive copper layer, a first resistive layer, a carrier dielectric layer, a second resistive layer, and a second conductive copper layer. The composite copper foil of this invention exhibits excellent overall performance and surface roughness, and possesses stable sheet resistance. It can be used in the manufacture of flexible embedded thin-film resistor PCBs and has promising application prospects.

Composition for a sensor element (10) comprising Y2O3, Al2O3, MnO2, NiO and Fe2O3 and further ZrO2, and intended to be used in a temperature sensor (1), wherein a molar concentration of Zr used in the composition for the sensor element (10) is 0.2-0.5, and wherein a molar concentration of the metallic elements yttrium, aluminium, manganese, nickel and iron used in the composition for the sensor element (10) is accordingly 0.2-0.5, 0.01-0.1, 0.1-0.3, 0.1-0.3 and 0.03-0.1.

A resistor according to the present disclosure includes an insulating substrate, a resistor body, an electrode, and an oxynitride film. The resistor body contains Cr, Si, and N and is provided on the insulating substrate. The electrode contains at least one of Cu or Ag and is provided on the resistor body. The oxynitride film is provided on the resistor body. The electrode and the oxynitride film are arranged side by side in a second direction perpendicular to a first direction. The first direction defines a thickness direction with respect to the insulating substrate. The oxynitride film is in contact with an end portion of the electrode in the second direction.

The present application provides a kind of flattening resistance element and its manufacturing method, it includes a substrate, a resistance layer and an electrode layer, the present application solves the problem of impedance increase and product characteristic anomaly caused by improper joint of the interface of electrode layer and resistance layer, including after the completion of electrode layer process, by using laser or grinding to eliminate the height difference of interface and process the structure of electrode layer profile discontinuity.

The invention relates to a process for producing a material composite (3) for a resistor arrangement, wherein the process comprises the following steps: a) providing a first starting material (1) and a second starting material (2), wherein the starting materials (1, 2) each comprise a first material (11, 21) composed of a first metal and a second material (12, 22) composed of a second metal, wherein the second metal differs from the first metal, and wherein both the first starting material (1) and the second starting material (2) each have a seam region (15, 25) at which the first material (11, 21) and the second material (12, 22) of the relevant starting material (1, 2) are each cohesively bonded to one another, b) two-dimensionally bonding the first starting material (1) to the second starting material (2), wherein the first material (11) of the first starting material (1) is cohesively bonded to the first material (21) of the second starting material (2), and the second material (12) of the first starting material (1) is cohesively bonded to the second material (22) of the second starting material (2), and wherein the bonding is performed in such a way that the seam region (15) of the first starting material (1) and the seam region (25) of the second starting material (2) are arranged flush to one another.

The invention relates to a resistor (1) comprising a conductor material layer (3) made of a conductor material, a resistive material layer (2) made of a resistive material joined to the conductor material layer (3), and a groove (4) having a specific groove width (b), a specific groove depth (t), and a specific groove flank angle relative to the plane of the conductor material layer (3), wherein the groove (4) is arranged in the conductor material layer (3) and divides the conductor material layer (3) into two terminal parts (5, 6) and projects into the resistive material layer (2). The invention provides that the groove flank angle is set such that the temperature coefficient of the resistance value is as close to zero as possible. Furthermore, the invention includes an associated manufacturing process.

The application discloses a composite metal foil and a metal-clad laminate, the composite metal foil comprising a substrate layer, a transition layer and a thermistor layer which are sequentially stacked; the transition layer is an electrically conductive amorphous film, and the sheet resistance of the transition layer is less than or equal to 50 Ω / □. By arranging the transition layer between the substrate layer and the thermistor layer, and the transition layer being an electrically conductive amorphous film, a completely uniform surface without grain boundary interference can be provided, the influence of the crystal lattice of the substrate layer is blocked, the resistance uniformity of the thermistor layer is effectively improved, internal stress can be released, and the problem of internal stress concentration can be avoided; in addition, by limiting the sheet resistance of the transition layer to be less than or equal to 50 Ω / □, it can be ensured that the substrate layer forms a resistance circuit with the thermistor layer through the transition layer after etching the window, and the resistance characteristics of the thermistor layer can be avoided from being affected, so that the stability of the thermosensitive characteristics of the thermistor layer is improved, and the high-precision temperature sensing requirement can be met.

The invention provides a chip resistor and a manufacturing method thereof. The chip resistor comprises a substrate, a resistive layer arranged on the substrate, two electrodes, a barrier layer and a protective layer, the resistive layer has a first surface and a second surface opposite to each other, and the substrate is located on the first surface of the resistive layer. The two electrodes are arranged at two opposite ends of the second surface of the resistive layer at intervals. The barrier layer is disposed between the electrodes and covers the second surface of the resistive layer. The protective layer is disposed on the barrier layer and covers the top surface of each electrode and the barrier layer, and the barrier layer is located between the protective layer and the second surface of the resistive layer. Therefore, the possibility that external water vapor passes through the barrier layer can be reduced, so that the influence of the water vapor on the resistance of the chip resistor is reduced.

This invention relates to the technical field of resistors, specifically to a high-quality surge-resistant and sulfide-resistant wafer resistor and its preparation method. The resistor comprises a white substrate, a resistive layer, a protective layer, and an electrode assembly. The white substrate is an alumina ceramic substrate with a thickness of 0.2-0.6 mm. The resistive layer is formed by sintering ruthenium-based thick-film resistive paste and is disposed between the protective layer and the white substrate. The electrode assembly includes a first front electrode, a second front electrode, a back electrode, and a side electrode. The first front electrode, the second front electrode, and the back electrode are all elongated plates. The white substrate is located between the first front electrode and the back electrode, and the contact area between the first front electrode and the upper surface of the white substrate is not less than 1 / 4 of the upper surface area of ​​the white substrate. One side of the second front electrode is in close contact with the first front electrode. This invention reduces the contact channel between sulfide gas and the electrodes, significantly improving the service life of the resistor in harsh environments.

The invention discloses a low-power-consumption variable-frequency starting PTC (Positive Temperature Coefficient) thermistor and a preparation method thereof, and belongs to the technical field of PTC thermistors. The resistor comprises a PTC ceramic base material, a glass phase material, a semiconducting agent and a manganese additive, wherein the high-temperature-resistant ceramic material comprises the following raw materials in percentage by mass: 48%-62% of BaCO3, 22%-38% of TiO2, 0.5%-1.2% of SrCO3, 4%-8% of CaCO3, 4%-8% of PbO, 0.3%-0.6% of a glass phase material, 0.25%-0.45% of a semiconducting agent and 0.3%-0.6% of Mn (NO3) 2. Through the synergistic effect of component regulation, dual coating modification and segmented atmosphere sintering, a grain boundary structure and a potential barrier are effectively regulated, the contradiction between size reduction and reliability, between Curie temperature reduction and recovery time, and between chip temperature rise and thermal shock resistance is solved, and high reliability and excellent performance of a product under low power consumption are achieved.

This invention discloses a flexible PPTC thermistor composite film with secondary protection function and its preparation method. The flexible PPTC thermistor includes a substrate layer, a PPTC layer, and an encapsulation layer stacked together. The substrate layer is a flexible polymer film, the encapsulation layer is made of an insulating polymer, and the PPTC layer is prepared from components comprising the following mass fractions: 50%–90% conductive particles, 8%–45% aqueous polymer, 1%–10% high-molecular polymer, and 1%–10% coupling agent. The aqueous polymer is selected from at least one of aqueous polyurethane, polyvinyl alcohol, and polyvinylpyrrolidone, and the high-molecular polymer is selected from at least one of low-density polyethylene, linear low-density polyethylene, high-density polyethylene, polypropylene, polystyrene, polytetrafluoroethylene, polyoxymethylene, and polyamide. The flexible PPTC thermistor composite film of this invention can undergo two resistance abrupt changes, possessing secondary protection function. Furthermore, the composite film exhibits small temperature differences and uniform temperature distribution across different regions, while also demonstrating excellent bending resistance.

A micro-resistor layer manufacturing method and a micro-resistor manufacturing method. The micro-resistor layer manufacturing method comprises: providing a substrate; forming a first resistor layer on the substrate by a screen printing process or a sputtering process, wherein the first resistor layer covers a plurality of product areas of the substrate; cutting the first resistor layer into a plurality of second resistor layers, wherein each product area comprises one second resistor layer, and an area of each second resistor layer is less than 0.4*0.2 square millimeters; and trimming a pattern of each second resistor layer according to a preset resistance value, so that the pattern of each second resistor layer corresponds to the preset resistance value. The micro-resistor manufacturing method applies the above micro-resistor layer manufacturing method to manufacture a micro-resistor. Thus, a micro-resistor layer and a micro-resistor can be provided.