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81results about How to "Low room temperature resistivity" patented technology

Conductive composite material and PTC (Positive Temperature Coefficient) thermal sensitive element prepared from same

The invention relates to a conductive composite material and a PTC (Positive Temperature Coefficient) thermal sensitive element prepared from the same. The conductive composite material comprises the following components in parts by volume: 15-75 percent of crystalline polymer substrate and 25-85 percent of conductive filler with the particle size between 0.1 mum and 10 mum, wherein the conductive filler is dispersed in the crystalline polymer; and a coupling agent is titanic acid ester which accounts for 0.05-5 percent by volume of the conductive filler. The structural formula of the conductive composite material is (R1O)m-Ti-(OX-R2-Y)n, wherein radical R1 is alkyl, radical X is phosphoric acid easer base, radical R2 is alkyl, radical Y is acyloxy, m is more than or equal to 1 and less than or equal to 4, n is more than or equal to 1 and less than or equal to 3, and m and n are integers. The PTC thermal sensitive element prepared from the conductive composite material is formed by fixedly clamping a conductive composite material layer between two metal foils. The invention has the advantages that: the conductive material has high electric conductivity; and the PTC element prepared from the conductive composite material has very low room temperature resistivity, high PTC intensity and resistance reproducibility.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD

High-performance lead-free negative temperature coefficient temperature-sensitive thick film and preparation method thereof

The invention discloses a high-performance lead-free negative temperature coefficient temperature-sensitive thick film and a preparation method thereof. Major composite components are combined in two combination modes. In an inorganic phase I combination mode, (1-t)Ba1-yMyFe1-xSnxO3+tBaCo<II>zCo<III>2zBi1-3zO3, wherein t is more than or equal to 0.4 and less than or equal to 0.95 and is a molar ratio; and in an inorganic phase II combination mode, (1-m-1)Ba1-yMyFe1-xSnxO3+mBaCo<II>zCo<III>2zBi1-3zO3+1/2Ag2O, wherein m is more than or equal to 0.3 and less than or equal to 0.65; l is more than or equal to 0.05 and less than or equal to 0.3; m and l are molar ratios; and the composite components are uniformly mixed with an organic carrier in the mass ratio of 75:25 so as to form thick film resistance paste. The preparation method comprises the following steps of: printing the paste on a substrate by a screen printing process; flattening, baking, pre-sintering and repeatedly printing so as to obtain a thick film biscuit with a required thickness; and sintering the biscuit at the temperature of between 750 and 850 DEG C and preserving heat for 40 to 80 minutes so as to obtain the lead-free negative temperature coefficient temperature-sensitive thick film. The thick film has a simple preparation process and a low film forming temperature, the film thickness is between 10 and 100 mu m, the temperature sensitive constant value is between 2,500 and 5,500 K, the room temperature resistivity is between 150 ohm.cm and 10 M ohm.cm and the aging resistant time is over 800 hours.
Owner:GUILIN UNIV OF ELECTRONIC TECH

High use temperature lead-free PTCR (positive temperature coefficient resistance) ceramic and preparation method thereof

InactiveCN104370539APromote semiconductingRaise resistance kickCurie temperatureJump ratio
The invention discloses a high use temperature lead-free PTCR (positive temperature coefficient resistance) ceramic and a preparation method thereof, and belongs to the field of lead-free electronic ceramic materials. A general formula of the material composition is as follows: (Na0.5Bi0.5)x1 (Ba1-x1-x2Ax2) Ti1-yByO3+zmol%M), wherein x1 is greater than or equal to 0.08 and less than or equal to 0.6, x2 is greater than or equal to 0 and less than or equal to 0.2, y is greater than or equal to 0 and less than or equal to 0.05, z is greater than or equal to 0 and less than or equal to 3, A is one or more of Sr, Ca, Bi, Y and La, B is one or more of Zr, Sn, Mn, Cu, Nb, Ta and Sb, and M is one or more of Al2O3, SiO2, TiO2, BaO and B2O3. The high use temperature lead-free PTCR ceramic prepared by method has the following performance indicators: Curie temperature is at 175 to 235 DEG C; resistance jump ratio is 2 to 5 orders of magnitude; room temperature resistivity is 60-106 Omega .cm; temperature coefficient of resistance is 10-20% / DEG C; and withstand voltage strength is 150-220V / mm (a.c.). A ceramic sample is prepared in nitrogen by one-step sintering method, and has the advantages of simple controllable process, stable material performance and good repeatability.
Owner:TONGREN UNIV

PTC (Positive Temperature Coefficient) protection element capable of maintaining ultralarge current

The invention discloses a PTC (Positive Temperature Coefficient) protection element capable of maintaining ultralarge current, which comprises a first external conducting metal pin, a second external conducting metal pin and a resistance PTC chip, wherein the resistance PTC chip is arranged between the first external conducting metal pin and the second external conducting metal pin; the resistance PTC chip comprises (1) at least one crystallinity high polymer material; (2) a conductive filler dispersed in the crystallinity high polymer material, wherein the mass resistivity of the conductive filler is lower than 200[mu]omega.cm, heat conductivity is larger than 10W / (m.k), the particle size is between 0.1[mu]m to 30[mu]m and D50 is not larger than 20[mu]m; (3) and at least two metal electrode foils, wherein the first / second external conducting metal pin is respectively connected to the electrode foils at two faces of the PTC chip. The PTC thermal sensitive element has ultralow electrical resistance property, discharging of high voltage and large current is realized by low specific resistance and high thermal conductivity of the material while overtemperature protection under small current is realized, and application in an accumulator of an electric bicycle is realized.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD

BaTiO3-based PTC thermal sensitive ceramic material and preparation method thereof

The invention provides a BaTiO3-based PTC thermal sensitive ceramic material and a preparation method thereof. The thermal sensitive ceramic material comprises the primary materials of TiO2, BaCO3, Bi2O3 and K2CO3 and the auxiliary materials of Nb2O5, Y2O3, Mn(NO3)2 and Sb2O3. The preparation method comprises the following steps of: mixing the primary materials and mixing the primary materials with zirconium ballstones and deionized water and roasting into pre-combined materials, mixing with the auxiliary materials, zirconium ballstones and deionized water to form complete dosing, then after mixing the complete dosing with zirconium ballstones and deionized water, ball-milling, drying, prilling and screening to press as samples, then transferring to the high temperature electric furnace in nitrogen atmosphere to raise the temperature and reduce the temperature, changing the in-furnace atmosphere to air with nitrogen when the temperature is reduced to 1100-900 DEG C and maintaining the temperature, then cooling along with the furnace and finally coating the electrode slurry to obtain the PTC thermal sensitive ceramic material. The ceramic material prepared by the method has higher room temperature which achieves 185 DEG C maximally, is non-poisonous and has low room temperature resistivity.
Owner:SHAANXI UNIV OF SCI & TECH

Conducting composite material with resistance positive-temperature effect and overcurrent-protecting element

The invention relates to a conducting composite material with a resistance positive-temperature effect and an overcurrent-protecting element. The conducting composite material with the resistance positive-temperature effect comprises a polymeric base material and a conducting filler, wherein the polymeric base material counts for 20 to 75 percent of the volume fraction of the conducting composite material; and the conducting filler has a core-shell type granular structure which is formed by an inner core and an outer shell, the conducting filler counts for 25 to 80 percent of the volume fraction of the conducting composite material, the grain diameter is 0.1 to 20 mu m, the volume resistivity is not greater than 100mu omega. cm, and the conducting filler is dispersed in the polymeric base material. The conducting composite material with the resistance positive-temperature effect disclosed by the invention has low resistivity and excellent weather resistance, the overcurrent-protecting element prepared from the conducting composite material with the resistance positive-temperature effect has extremely-low room-temperature resistivity and simultaneously still has good weather-resisting performance and excellent resistance reproducibility and PTC (Positive Temperature Coefficient) strength.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD

Low-resistance BaM<II><x>Bi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material and preparation method thereof

InactiveCN103864412ALow room temperature resistivityModerate thermal constantFilm resistanceScreen printing
The invention discloses a low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material and a preparation method thereof. The main active ingredient of the low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material is BaMBi<1-x>O3 thermosensitive phase powder, wherein x is more than or equal to 0.01 and less than or equal to 0.05, the M is one of plus 2 oxides of Co, Mn, Ni, Cu and Zn. The preparation method comprises the steps: evenly mixing BaMBi<1-x>O3 thermosensitive phase powder with an organic carrier in the mass ratio of 74:26 to form thick-film resistance paste; printing the resistance paste on a substrate through a silk-screen printing technique, laying flat, drying, pre-roasting and repeatedly printing to obtain the thick-film biscuit with needed thickness; sintering the biscuit at 700-900DEG C, and insulating for 120 minutes to obtain the low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material. The low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material is simple in preparation technique, low in film forming temperature, the thickness of the film is within 20-80mu m, the thermosensitive constant value ranges from 1000-4000K, the room-temperature resistivity is within the range of 0.7ohm.cm to 20kohm.cm, and the aging rate under the condition of insulating for 650hours at150DEG C is lower than 2%.
Owner:GUILIN UNIV OF ELECTRONIC TECH

Titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and preparation method thereof

The invention discloses a titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and a preparation method thereof which can be applied to the technical field of uncooled infrared detectors and electronic thin films. The vanadium dioxide thermo-sensitive thin film material is prepared with titanium and ruthenium as a dopant and comprises a substrate layer and a titanium-ruthenium co-doped vanadium dioxide thin film layer; the titanium-ruthenium co-doped vanadium dioxide thin film layer comprises, by atomic percent, 4.0-7.0% of titanium, 0.5-1.5% of ruthenium, 25.0-30.0% of vanadium and the balance oxygen. The invention further provides a method for preparing the vanadium dioxide thermo-sensitive thin film material by means of the method of reactive sputtering witha titanium-ruthenium-vanadium alloy target as a source material or the method of reactive co-sputtering with a titanium target, a ruthenium target and a vanadium target as sputtering sources. A prepared vanadium dioxide thin film is of a monoclinic poly-crystal structure, the non-phase-change characteristic is shown, the low room temperature specific resistance is achieved, and the resistance temperature coefficient higher than those of a vanadium dioxide and common VOX non-doped thermo-sensitive thin film is achieved; and a preparation technology of the titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material is easy to achieve through an existing sputtering device or improvement of the existing device and is compatible with a device MEMS technology.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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