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Titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and preparation method thereof

A vanadium dioxide thermal sensitive, vanadium oxide thin film technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of limiting the selection of device working parameters, restricting pixel structure design, and reducing signal-to-noise ratio. and other problems, to achieve the effect of flexible pixel structure design and device working parameter selection, avoiding adverse effects and improving sensitivity

Active Publication Date: 2018-02-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

But the monoclinic VO 2 Thin films also face three problems when used as heat-sensitive materials for uncooled focal plane arrays: first, the monoclinic phase structure of VO 2 The thermal hysteresis migration phenomenon during the phase transition of thin films means high thermal hysteresis noise, which will significantly increase the noise of the device and reduce its signal-to-noise ratio
Multiple volume changes will inevitably reduce the reliability of the uncooled focal plane array element bridge film layer
Third, VO 2 The film has a high room temperature resistivity (>10Ω cm), which not only restricts the design of the pixel structure, but also limits the selection of working parameters of the device
Therefore, VO with a monoclinic phase structure 2 Thin films are difficult to obtain real applications in the development of high-performance uncooled infrared focal plane array devices as heat-sensitive films

Method used

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  • Titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and preparation method thereof
  • Titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and preparation method thereof
  • Titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and preparation method thereof

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Experimental program
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Embodiment 11

[0045] Embodiment 1.1 (comparative example):

[0046] Will come with 250nmSiN X The thin film Si wafer was preheated at 100°C for 40 minutes in the vacuum environment of the sputtering chamber; then the pure vanadium target (99.9%) was used as the sputtering source, and the pure vanadium The target was pre-sputtered for 5 minutes; then, using an atmosphere with an oxygen / argon flow ratio of 1:20, and at a working pressure of 1.5Pa, the preheated substrate (with 250nm SiN X The vanadium oxide thin film was sputter-deposited on the thin film Si sheet) for 50 minutes; and then under the oxygen-enriched atmosphere with an oxygen / argon flow ratio of 10:1, and at a vacuum chamber pressure of 1.5 Pa, the enrichment was carried out at 380°C for 60 minutes. Oxygen atmosphere annealing. After the annealing is completed, the temperature is lowered to below 85° C., and the sample is taken out to obtain an undoped vanadium dioxide film (referred to as VO-11). This sample is used as a com...

Embodiment 12

[0053] Will come with 250nmSiN X The thin-film Si sheet was preheated at 120°C for 60 minutes in the vacuum environment of the sputtering chamber; then, the titanium-ruthenium-vanadium alloy target containing 6.0% titanium and 1.0% ruthenium (atomic percentage) was used in a pure argon atmosphere at 0.5Pa Under the working pressure, the titanium ruthenium vanadium alloy target was pre-sputtered for 15 minutes; then, the oxygen / argon flow ratio was 1:30, and the titanium ruthenium vanadium alloy target was sputtered under the working pressure of 2.5Pa. After the substrate (with 250nmSiN X Ti-Ru co-doped vanadium oxide thin film was deposited on the thin film Si sheet) for 50 minutes; and then under the oxygen-enriched atmosphere with the oxygen / argon flow ratio of 1:0, under the vacuum chamber pressure of 1.0Pa, carry out 350 ℃, 90 minutes Annealed in an oxygen-enriched atmosphere. After the annealing is completed, the temperature is lowered to below 85° C., and the sample is...

Embodiment 13

[0060] will come with 250nmSiO 2 The thin-film Si sheet was preheated at 100°C for 100 minutes in the vacuum environment of the sputtering chamber; then, a titanium-ruthenium-vanadium alloy target containing 7.5% titanium and 2.0% ruthenium (atomic percentage) was used in a pure argon atmosphere at 1.0Pa Under the working pressure, the titanium ruthenium vanadium alloy target was pre-sputtered for 10 minutes; then, the oxygen / argon flow ratio was 1:25, and the titanium ruthenium vanadium alloy target was sputtered under the working pressure of 2.0Pa. Deposit titanium ruthenium co-doped vanadium oxide thin film on the substrate after 50 minutes; then carry out 350 ℃, 90 minutes oxygen-enrichment atmosphere under the oxygen-enrichment atmosphere of 2:1 oxygen / argon flow ratio, under the vacuum chamber pressure of 3.0Pa Atmosphere annealing. After the annealing is completed, the temperature is lowered to below 85° C., and the sample is taken out to obtain a titanium-ruthenium co...

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Abstract

The invention discloses a titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material and a preparation method thereof which can be applied to the technical field of uncooled infrared detectors and electronic thin films. The vanadium dioxide thermo-sensitive thin film material is prepared with titanium and ruthenium as a dopant and comprises a substrate layer and a titanium-ruthenium co-doped vanadium dioxide thin film layer; the titanium-ruthenium co-doped vanadium dioxide thin film layer comprises, by atomic percent, 4.0-7.0% of titanium, 0.5-1.5% of ruthenium, 25.0-30.0% of vanadium and the balance oxygen. The invention further provides a method for preparing the vanadium dioxide thermo-sensitive thin film material by means of the method of reactive sputtering witha titanium-ruthenium-vanadium alloy target as a source material or the method of reactive co-sputtering with a titanium target, a ruthenium target and a vanadium target as sputtering sources. A prepared vanadium dioxide thin film is of a monoclinic poly-crystal structure, the non-phase-change characteristic is shown, the low room temperature specific resistance is achieved, and the resistance temperature coefficient higher than those of a vanadium dioxide and common VOX non-doped thermo-sensitive thin film is achieved; and a preparation technology of the titanium-ruthenium co-doped vanadium dioxide thermo-sensitive thin film material is easy to achieve through an existing sputtering device or improvement of the existing device and is compatible with a device MEMS technology.

Description

technical field [0001] The invention relates to the technical field of infrared detectors and electronic thin films, in particular to a vanadium dioxide heat-sensitive thin film material and a preparation method thereof, in particular to a vanadium dioxide heat-sensitive material with no phase change, low resistivity, and high temperature coefficient of resistance. Thin film materials and methods for their preparation. Background technique [0002] Uncooled infrared focal plane array detectors are widely used in fields such as forest fire prevention, security protection, power inspection, and medical treatment because they do not require a refrigerator, have the advantages of small size, light weight, and high sensitivity. In order to increase the detection distance of the device and reduce the manufacturing cost, the pixel of the uncooled red-infrared focal plane array tends to be gradually reduced, and has been gradually reduced from the initial 45um to the current 12um (R...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/0036C23C14/083C23C14/34C23C14/3464C03C2218/322C03C17/245C03C2217/218C03C2217/24C03C2218/154C03C2218/31C03C2218/32
Inventor 顾德恩徐世洋周鑫郑宏航蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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