Low-resistance BaM<II><x>Bi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material and preparation method thereof

Abstract

The invention discloses a low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material and a preparation method thereof. The main active ingredient of the low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material is BaMBi<1-x>O3 thermosensitive phase powder, wherein x is more than or equal to 0.01 and less than or equal to 0.05, the M is one of plus 2 oxides of Co, Mn, Ni, Cu and Zn. The preparation method comprises the steps: evenly mixing BaMBi<1-x>O3 thermosensitive phase powder with an organic carrier in the mass ratio of 74:26 to form thick-film resistance paste; printing the resistance paste on a substrate through a silk-screen printing technique, laying flat, drying, pre-roasting and repeatedly printing to obtain the thick-film biscuit with needed thickness; sintering the biscuit at 700-900DEG C, and insulating for 120 minutes to obtain the low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material. The low-resistance BaMBi<1-x>O3 negative-temperature-coefficient thermosensitive thick-film material is simple in preparation technique, low in film forming temperature, the thickness of the film is within 20-80mu m, the thermosensitive constant value ranges from 1000-4000K, the room-temperature resistivity is within the range of 0.7ohm.cm to 20kohm.cm, and the aging rate under the condition of insulating for 650hours at150DEG C is lower than 2%.

Description

technical field [0001] The invention relates to the field of electronic information functional materials, in particular to a low-resistance BaM II x Bi 1-x o 3 Negative temperature coefficient thermosensitive thick film material and its preparation method. Background technique [0002] Negative temperature coefficient thermistor (abbreviated "NTCR") refers to a type of electronic information material device whose resistance decreases exponentially with the increase of temperature. The composition of NTC thermosensitive devices currently in industrial applications is generally based on bulk materials with spinel and perovskite structures. However, with the rapid development of the electronic industry in various countries in the world, large-scale integrated circuits require electronic devices to have the characteristics of miniaturization and integration, coupled with the widespread use of high-performance screen printing machines, so that various bulk resistance devices ...

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Problems solved by technology

[0003] The common problem of various film-type NTC thermal elements currently being researched is that the room temperature resistivity is too high and difficult to reduce. Two key points are: (1) Too high room temperature resistivity (usually above 100kΩ·cm); (2) The thermal constant is low (the thermal constant above 100kΩ·cm is usually lower than 3000K, and the thermal constant corresponding to such a high room temperature resistivity of bulk ceramic materials is generally above 4000K)

In addition, two important problems usually encountered in the preparation of film resistance devices: (1) Adhesive additives need to be added to achieve bonding with the substrate, such as Pb, Bi, Sb and other low melting point oxide additives; (2) need to add Conductive additives such as Ru compounds to reduce the room temperature resistivity of thick films

However, the presence of adhesion additives inevitably deteriorates the basic properties of heat-sensitive thick films, such as increasing the room temperature resistivity and reducing the thermal constant; the presence of conductive additives increases the cost on the one hand, and Worsened resistance-temperature log-linear relationship

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