Method for preparing vanadium oxide film by metal oxidation method

Abstract

The invention discloses a method for preparing a vanadium oxide film by a metal oxidation method, which comprises the following steps of: (1) preparation of a silicon wafer with an Si3N4 layer; (2) preparation of a pure metal vanadium film, wherein the vacuum degree is (5-6)X 10<-4>Pa, the sputtering working pressure is between 1 and 2.0 Pa, and the sputtering time is between 10 and 20 min; and (3) annealing oxidation, wherein the annealing temperature is between 400 and 500 DEG C, and the annealing oxidation time is between 1and 2 hours. The invention provides the method for preparing the vanadium oxide film by the metal oxidation method with easy control and simple process, the resistance temperature coefficient of products reaches more than -3X10<-2>K<-1>, and preparation methods of thevanadium oxide film are developed. The vanadium oxide film is an ideal material for producing heat-sensitive sensors, infrared detectors and infrared imaging devices.

Description

Method for preparing vanadium oxide film by metal oxidation method technical field The invention relates to a vanadium oxide film thermistor, in particular to a method for preparing a vanadium oxide film by a metal oxidation method. Background technique Vanadium oxide film VOx has a high temperature coefficient of resistance at room temperature, which can reach above -3×10-2K-1, which is 5 to 10 times that of ordinary metal films. It is currently used to make thermal sensors, infrared detectors and Ideal material for infrared imaging devices. At present, the main method for preparing vanadium oxide thin films is the reactive sputtering coating method, that is, in a vacuum chamber, argon and oxygen are introduced at the same time, argon is used as a protective gas, and oxygen is used as a reactive gas. While sputtering metal vanadium, oxygen and vanadium react directly to form a vanadium oxide film. This preparation method requires very strict conditions, and needs to cont...

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Problems solved by technology

The purpose of the present invention is to overcome the disadvantages of the prior art that there are many control parameters and complicated processes, and provide a method for preparing a vanadium oxide film with a relatively high temperature coefficient of resistance by a metal oxidation method. The resistance temperature of the vanadium oxide film prepared by this method is The coefficient reaches above -3×10-2K-1, and the preparation method is simple

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