103 results about "Electron beam deposition" patented technology

Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl₄vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl₄ vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

The invention discloses a method for preparing a graphene membrane. Carbon atoms are released from a solid carbon source by a method such as heat treatment, heat evaporation, sputtering, electron beam deposition, laser deposition or plasma deposition to form the graphene membrane on a catalytic layer or a substrate, wherein the solid carbon source is graphite, amorphous carbon, diamond, fullerene or carbon nano tubes. In the method for preparing the graphene membrane, the solid carbon source is used, the method is simple; and the prepared graphene membrane is easy to control in terms of thickness, structure and size, has excellent photoelectric characteristics and is suitable for preparing high-performance photoelectronic devices on a large scale.

The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO₂ coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.

The multi-point probe comprises a supporting body defining a first surface, a first multitude of conductive probe arms each of the probe arms defining a proximal end and a distal end being positioned in co-planar relationship with the first surface of the supporting body. The probe arms are connected to the supporting body at the proximal ends thereof and have the distal ends freely extending from the supporting body, giving individually flexible motion to the first multitude of probe arms. The probe arms originate from a process of producing the probe arms on a wafer body in facial contact with the wafer body and removal of a part of the wafer body providing the supporting body and providing the probe arms freely extending therefrom. The multi-point probe further comprises a third multitude of tip elements extending from the distal end of the first multitude of probe arms. The tip elements originate from a process of metallization of electron beam depositions on the probe arms at the distal ends thereof.

The invention relates to a transparent electrode based on an ultrathin metal and a preparation method thereof. The transparent electrode is of a four-layer structure, and comprises a transparent base (1), a nucleating seed crystal layer (2), an ultrathin metal layer (3) and an antireflection layer (4) from bottom to top in sequence. The preparation method of the transparent electrode comprises the following steps: cleaning and drying the transparent base; depositing on the transparent base to form the uncleating seed crystal layer; depositing on the uncleating seed crystal layer to form the ultrathin metal in a vacuum evaporation or electron beam deposition or magnetron sputtering deposition manner; and depositing on the ultrathin metal to form the antireflection layer in a solution spin-coating manner or solution blade-coating or vacuum evaporation or magnetron sputtering deposition manner. The transparent electrode disclosed by the invention has the characteristics of low production cost, simple technology, easy flexible integration, high stability, good surface morphology and the like.

Polycrystals with a MgO purity of at least 99.0%, a relative density of at least 90.0%, a sulfur S content of 0.01 to 50 ppm, a chlorine Cl content of 0.01 to 50 ppm, a nitrogen N content of 0.01 to 200 ppm, and a phosphorus P content of 0.01 to 30 ppm. Even when vapor deposition is conducted using electron beam deposition, almost no splash occurs, and the film characteristics of the product MgO film can also be improved.

The invention discloses a method for preparing structured graphene based on reaction of Cl2 and Ni film annealing, mainly aiming at solving the problems that the graphene prepared by the prior art is poor in continuity and uneven in the number of layers. The realization process of the method comprises the steps of: (1) leading a carbide layer to grow on a Si substrate for transition; (2) leading a 3C-SiC film to grow at the temperature of 1200-1300 DEG C; (3) depositing a layer of SiO2 on the surface of the 3C-SiC film, and carving a graphic window; (4) after the graphic window is formed, leading the exposed 3C-SiC to have reaction with Cl2 at the temperature of 700-1100 DEG C, and generating a carbon film; (5) then, putting the generated carbon film sample piece into a buffer hydrofluoric acid solution, and removing the SiO2 outside the window; (6) after that, depositing a layer of Ni film on another Si sample piece by electron beams; and (7) arranging the carbon film sample piece without SiO2 on the Ni film, and arranging in Ar gas; and carrying out annealing at 900-1100 DEG C for 15-30minutes, and generating the structured graphene at the position of the window of the carbon film. The structured graphene prepared by the invention is smooth in the surface, good in continuity and low in porosity, thus being used for making a microelectronic device.

The invention discloses an up-and-down-conversion luminescent high-transmittance amorphous fluoride film and a preparation method thereof, and belongs to the field of solid luminescent materials. The film comprises YbF3 and ErF3, and the molar fraction of the ErF3 is 0.5%-15%. The preparation method includes: adding YbF3 powder into ErF3 powder for ball-milling mixing, drying prior to tabletting, and calcining for 6h-8h at the temperature of 600-750 DEG C by a carbon coating method so that a ceramic target is calcined; and using an electron beam deposition method which includes that a silicon wafer and quartz are used as a substrate, and under the vacuum condition, the substrate temperature ranges from 400 DEG C to 500 DEG C, the target spacing ranges from 25cm to 32cm, the deposition beam current ranges from 3mA to 6mA, and the deposition time ranges from 15min to 90min. The amorphous film achieves combination of up-conversion and down-conversion mechanisms and is capable of effectively converting an ultraviolet wave band (300nm-400nm) and an infrared wave band (around 980nm) to a visible light wave band (around 656nm), and the transmittance of the film is averagely higher than 95% so that the film is hopefully applied to solar cells to improve photoelectric efficiency of the same.

A tape-manufacturing system for coating at least one tape substrate such as, for example, for the manufacture of a high-temperature superconductor (HTS) conductor is disclosed. The tape-manufacturing system includes at least two electron beam (e-beam) deposition sources, at least one assist source and, optionally, a controller. Each e-beam deposition source may be in-process repairable. Each e-beam deposition source is capable of communicating an evaporant material with at least a portion of at least one tape substrate to deposit a coating thereon. The at least one assist source is capable of communicating a beam of a species to the coating. The controller communicates with the at least two e-beam deposition sources and the at least one assist source.

The present invention relates to a method for manufacturing a brand logo and a trademark label using a synthetic resin film, comprising: a first step for preparing an electroformed mold or a soft mold having an image or pattern; a second step for applying a UV resin; a third step for positioning a transparent synthetic resin film through which light is able to pass; a fourth step for performing compression using a pressing roller; a fifth step for curing the UV resin by irradiating ultraviolet light; a sixth step for obtaining a film having the image and pattern by separating the synthetic resin film through delamination; a seventh step for forming a metal deposited film on the rear surface of the synthetic resin film; an eighth step for forming a printed layer for protecting the metal deposited film, exhibiting a light-transmission blocking function, and implementing a primary color; a ninth step for exposing only a portion where a secondary color is to be implemented by partially removing the printed layer and the metal deposited film, which are formed on the rear surface of the synthetic resin film, through laser marking; a tenth step for forming a secondary color implementation layer by carrying out electron beam deposition or by performing printing through a silk printing technique; an eleventh step for attaching double-sided tape or applying an adhesive primer; and a twelfth step for exposing a brand logo and a trademark label by performing laser cutting.

The invention discloses a preparation method of large-area graphene on an Si substrate based on Ni film annealing and mainly solves the problems of small area, poor continuity and non-uniform layers of graphene prepared in the prior art. The preparation method comprises the following implementation steps: growing a carburization layer on the 4-12-inch Si substrate to be used as a transition and growing a 3C-SiC heteroepitaxial film at the temperature of 1200 DEG C to 1350 DEG C by utilizing growth gas sources C3H8 and SiH4; carrying out hydrogen etching on the grown 3C-SiC film and removing a compound generated by etching; reacting 3C-SiC with gaseous CCl4 at a temperature of 800-1,000 DEG C to generate a carbon film; electron beam-depositing an Ni film on the carbon film, putting a sample sheet plated with the Ni film into Ar gas and annealing for 10-20 minutes at a temperature of 1,000-1,250 DEG C to generate a graphene sample sheet; and finally removing the Ni film from the graphene sample sheet. The graphene prepared by the method has the advantage that the area can reach 12 inches, the continuity is good, the surface is smooth, and the porosity is low. The graphene can be used for manufacturing microelectronic devices and biological sensors or sealing gas and liquid.

The invention relates to a transparent conductive thin film widely applied in the technical fields such as a LCD screen, an electroluminescent display, a solar cell, a TFT, an organic and inorganic semiconductor laser, and thermal-insulating energy-saving glass, as well as a preparation method thereof. The thin film (IVO) is an indium vanadium oxide (In2O3:V) formed by doping V element in a main material In2O3, and the content of V in the IVO material accounts for 0.1 percent-30 percent of the content of In. The thin film can be prepared by a plurality of film plating techniques such as high vacuum thermal evaporation, electron beam deposition and sputtering. The thin film is firm, and has good conductivity, visible light transparency and chemical stability.

A transmission electron microscope film window for in-situ high-resolution observation of an electric field induced phase transition process of a phase transition material. The observation method comprises the following steps: processing electrode shapes on a metal sheet used as a mask plate by laser cutting or metal etching methods; covering a SiNx film window with the mask plate, plating metal electrodes by a film-plating machine; performing electron beam deposition at two ends of each obtained electrode by FIB to prepare Pt electrodes with small spacing; cutting and processing the SiNx film between the electrodes and the film between the Pt electrodes by focused ion beam to obtain a sample platform with a bridge structure; plating a film sample on the SiNx film window with the prepared electrodes by magnetron sputtering; connecting an electrified sample pole of a transmission electron microscope with the electrodes through a conductive adhesive, and performing in-situ electric experiments. The transmission electron microscope film window of the invention solves the problem that in-situ observation of the phase transition process of a phase transition material cannot be realized in a device, prevents sample damage caused by routine FIB preparation, and reduces the difficulty of sample preparation.

The invention discloses a preparation method of structured grapheme on a SiC substrate based on Ni membrane annealing, which solves the problems of unsmooth surface, poor continuity and uniform layer numbers of the prepared grapheme in the prior art. The preparation method comprises the following steps: performing standard cleaning on a SiC sample, depositing a layer of SiO2 on the surface of the SiC sample, etching a figure window on SiC2; placing the windowed sample in a quartz tube, reacting with bare SiC through gaseous state CC14 under the temperature of 750-1150 DEG C to generate a double layer carbon film; then placing the generated double layer carbon film sample in a buffer hydrofluoric acid solution to remove residual SiO2; performing electron beam deposition of a Ni membrane with thickness of 350-600nm on the other Si samples, placing the sample without SiO2 on the Ni membrane, placing in Ar gas and annealing for 10-20 minutes, and generating the double layer structured grapheme at a window position. The method provided by the invention has the advantages of simple process, high security, smooth surface of the double layer structured grapheme, good continuity and low porosity, and can be used for making a microelectronic electronic device.

The invention discloses an Si-substrate patterned graphene preparation method based on Ni film annealing, which solves the problme that the graphene has to be subjected to shape cutting by electron beam etching before being made into components. The preparation method comprises the following steps: (1) growing a carbonization layer on an Si substrate as transition, and growing a 3C-SiC film at 1200-1350 DEG C; (2) depositing a SiO2 layer on the surface of the 3C-SiC film, and etching a pattern on the SiO2; (3) reacting the bare 3C-SiC with gas-state CCl4 at 800-1000 DEG C to generate a carbon film; (4) putting the generated carbon film sample wafer in a buffer hydrofluoric acid solution to remove residual SiO2; and (5) depositing a 300-500nm-thick Ni film on the carbon film by using an electron beam, putting the sample wafer with the deposited Ni film in Ar gas, and annealing at 900-1100 DEG C for 15-25 minutes to generate the patterned graphene in the pattern position. The patterned graphene prepared by the method disclosed by the invention has the advantages of stable electron mobility and favorable continuity, and can be directly used for making basic components without etching.

The invention discloses a method for preparing graphene on an SiC substrate based on Ni film annealing and chlorine reaction and mainly solves the problems of poor continuity and unsmooth surface of graphene prepared in the prior art. The preparation method comprises the following implementation steps: firstly, carrying out RCA cleaning on the SiC substrate; carrying out hydrogen etching on the cleaned SiC substrate and removing etching residues; introducing mixed gas of Ar gas and Cl2 into a quartz tube reaction chamber and reacting SiC with Cl2 for 3-8 minutes at the temperature of 700-1,100 DEG C to generate a carbon film; then electron beam-depositing an Ni film on the carbon film; putting a sample sheet deposited with the Ni film into Ar gas and annealing for 10-30 minutes at the temperature of 950-1,150 DEG C to generate the graphene; and finally removing the Ni film from a graphene sample sheet by utilizing mixed solution of hydrochloric acid and copper sulfate. The graphene generated by the method has the advantages of smooth surface, good continuity and low porosity and can be used for manufacturing microelectronic devices and biological sensors or sealing gas and liquid.

A method for preparing a specimen for application of microanalysis thereto includes forming an initial conductive layer over a defined area of interest on a semiconductor substrate, the initial conductive layer formed through an electron beam deposition process. A volume of substrate material surrounding the area of interest is removed, thereby forming the specimen, including said area of interest and said initial conductive layer over the area of interest. The specimen is then removed from the bulk substrate material.

The invention discloses a Nickel (Ni) film annealing side gate graphene transistor preparation method based on reaction of silicon carbide (SiC) and chlorine gas, and mainly solves the problem that graphene transistor gate mediums prepared through the prior art result in reduction of migration rates of channel current carriers, and can not effectively control current transferring characteristics. The achieving process of the method is that (1) SiC pattern pieces are cleaned; (2) silicon dioxide (Sio2) masking is deposited on SiC pattern pieces after being cleaned and side gate graphene transistor patterns are photo-etched on the Sio2; (3) the pattern pieces after being photo-etched are placed in a quartz tube and are reacted with chlorine (Cl2) to generate carbon films; (4) the Sio2 masking is removed; (5) a Ni film layer is deposited on an electron beam on carbon film pattern pieces; (6) the carbon film pattern pieces are placed in Argon (Ar) and are generated into side gate graphene in an annealing mode; and (7) a polyether diols (Pd) / Au layer is deposited on the carbon film pattern pieces and is etched into metal contact of the side gate graphene transistor. Side gate graphene transistor manufactured by the Ni film annealing side gate graphene transistor preparation method based on reaction of the SiC and the chlorine gas is high in migration rates of current carriers, capable of accurately controlling channel current of a single transistor and avoiding scattering effect of top gate mediums of a top gate graphene field-effect tube.

Disclosed is a critical layer stress adjusting method for solving cracking of a multi-layer film caused by electron beam deposition. Electron beam deposition technology and ion beam assisted deposition technology are combined to adopt, a stress critical layer is deposited by using the ion beam assisted deposition technology, and the other film layers except to the stress critical layer are deposited by using the electron beam deposition technology. The critical layer stress adjusting method can solve the problem that when a thicker film layer is deposited by the electron beams, the film layer is cracked because tension stress borne by the film layer is too high, and the difficulties of film system designing and practical preparation technologies are not increased.

The invention discloses a PCB surface treatment metal thin layer quality analysis method. The method comprises the following steps that: scissors and an automatic sampling machine are used for takingout an area needing to be measured from a PCB; metal spraying treatment is performed; a test sample is firmly fixed on a metal sample table, and then mounting the sample table on the inclined surfaceof a test platform; a first protective layer is deposited by using electron beams; after the electron beam deposition is completed, a second protective layer is deposited by using a focused ion beam;the inclination angle of the measuring platform is adjusted, so that the surface of the sample can be cut in a manner that the surface of the sample is perpendicular to the direction of the focused ion beam; and the inclination angle of the sample is adjusted, and observation is performed. According to the method of the invention, a double-beam scanning electron microscope is used for processing and testing a sample, so that the influence of contact with chemical solution , mechanical stress, impurity pollution and the like in the sample preparation process can be avoided; by optimizing the test angle of the double-beam scanning electron microscope, an effect close to a plane test effect can be achieved, so that an accurate measurement result can be obtained; and therefore, a series of tests can be completed quickly.