15 results about "Electron beam deposition" patented technology

The invention discloses an electron beam deposition energy prediction method and system based on a convolution prediction model, and the method comprises the steps: S1, collecting two-dimensional plane deposition energy data of beam spots of various sizes through Monte Carlo simulation, carrying out the abnormal data recognition and abnormal data replacement, and obtaining the final two-dimensional plane deposition energy data; s2, obtaining a binarized graph function corresponding to each beam spot, and performing convolution with the binarized graph function corresponding to each beam spot by using a sedimentary energy density function to obtain a corresponding convolution prediction model; s3, fitting the deposition energy density function based on the final two-dimensional plane deposition energy data to obtain an optimal fitting value of each parameter; and S4, substituting the optimal fitting value of each parameter into the deposition energy convolution prediction model corresponding to the beam spot in any shape so as to realize deposition energy prediction of the beam spot in any shape. The method has the advantages of high prediction precision, small calculation amount and the like.

The application discloses a kind of based on multi-arc ion plating and ion beam enhanced electron beam evaporation coating device and method, it is related to material processing technical field.Coating chamber is equipped with heater, ion beam enhanced electron beam evaporation assembly includes multiple groups of matched arrangement crucible, electron gun, deflection coil and high-current ion source, multi-arc ion plating assembly includes cathode arc evaporation source array, workpiece motion control mechanism is connected bias power supply, vacuum and gas supply system carries out vacuumizing and gas supply, water supply and power supply system carries out water cooling and heat dissipation and provides operating power supply for each component, control system is respectively connected with each component Signal is used for real-time control and adjustment of each process parameter in deposition process.Integrated structure design and process synergy can complete multi-arc ion cleaning, multi-arc priming and high-current ion enhanced electron beam deposition composite coating full process in coating chamber, simplify operation process, improve coating efficiency and quality.

The present invention belongs to the technical field of preparation and stripping of photoelectrode thin film materials for photochemical water splitting, and specifically relates to a method for preparing a perovskite-type barium tantalum oxynitride thin film that is easy to strip. The method sequentially adopts a dual-source electron beam deposition method, a high-temperature nitridation method, and a mechanical stripping method to prepare a BaTaO2N nanoparticle film. During the preparation process, by regulating the NbO x The deposited film thickness, the optimal Ba / Ta atomic ratio and the deposited film thickness enable complete peeling from the quartz substrate with high process repeatability, without the need for oxide precursor powder preparation, and the resulting BaTaO2N film has more application possibilities.

The invention discloses a high-power medical CT scanning device, and relates to the technical field of medical CT, the high-power medical CT scanning device comprises an X-ray generation system, a scanning system, a detector system, a data acquisition system and a computer system; the X-ray generation system comprises a high-power electron beam and an X-ray target assembly, the X-ray target assembly comprises a target belt, a main transmission roller and a driven roller, the target belt is connected to the main transmission roller in a transmission mode, and the main transmission roller drives the target belt to move; a cooling medium is introduced into the driven roller to carry out surface contact cooling on the target belt, the high-power electron beam bombards the target belt to generate X-rays, and the solid target belt is rapidly cooled through surface contact by introducing the cooling medium into the driven roller. According to the medical CT scanning device, electron beam deposition heat can be effectively dispersed, the power of the medical CT scanning device is greatly improved, and the problem that a traditional solid target belt is damaged due to insufficient heat dissipation is solved.

The application relates to an electron beam evaporation coating device suitable for coating the surface of a hyperboloid optical window, and aims at solving the problem of poor deposition uniformity of a traditional electron beam evaporation on the surface of a hyperboloid sample. The electron beam evaporation coating device comprises a vacuum cavity, a rack and a multi-degree-of-freedom sample table. The multi-degree-of-freedom sample table comprises a lifting device, a rotating device, a main shaft, a lifting bellows and a rotating shaft. The transmission wheel in the rotating device is coupled with the shell of a self-rotation magnetic force coupler through a belt drive. The self-rotation main gear on the first connecting rod is engaged with the self-rotation driven gear on the rotating shaft. The bottom of the main shaft is provided with a rotating frame. The rotating frame is provided with a motor box and a second bearing seat. During electron beam deposition coating, the threads on the lifting lead screw drive the sample lifting slider to move up and down. The self-rotation main gear of the magnetic force coupling drives the driven gear to realize the self-rotation of the sample. The driving gear engages with the spherical gear to realize the movement of the spherical gear along the spherical surface, so that the surface of the hyperboloid sample is uniformly deposited.

The invention discloses a metal foil section for electron back scattering diffraction analysis and a preparation method, and belongs to the technical field of sample preparation. The preparation method comprises the following steps: shearing a metal foil, fixing the metal foil, placing the metal foil in a scanning electron microscope, selecting a target area of the metal foil, and carrying out electron beam deposition to obtain the metal foil containing an electron beam deposition protective layer; the metal foil containing the electron beam deposition protection layer is rotated by 180 degrees, then ion beam deposition is conducted under the condition that the ion beam current is 15 nA, and the metal foil containing the ion beam deposition protection layer is obtained; and after inclination compensation is carried out on the metal foil containing the ion beam deposition protection layer, etching is carried out by using ion beam etching of a focused ion beam under the condition that the ion beam current is 30nA, and the metal foil section for electron back scattering diffraction analysis is obtained. According to the preparation method, large-area section processing can be carried out on the metal foil, the preparation efficiency is high, and the characterization effect of electron back scattering diffraction analysis can be met.

The invention discloses a method for accurately controlling a metal single crack, and relates to the technical field of crack strain sensors, and the method comprises the following steps: 1, carrying out fluorination treatment on a silicon wafer in a closed container for 3 hours; 2, fully mixing a PMDS main agent and a curing agent according to a mass ratio of 10: 1, carrying out air exhaust defoaming in a vacuum box for 30 min, carrying out spin coating on a silicon wafer at a speed of 150 r / min for 60 s, and drying in a drying oven at 80 DEG C for 2 h to obtain a PDMS film; 3, cutting the PDMS film into long strips with the length of 30mm and the width of 7mm, attaching a metal mask to the central position of the PDMS, and sequentially depositing a 5nm Cr brittleness induction layer and a 40nm Au conductive layer through electron beams; the method comprises the following steps: designing a stress induction structure on a metal mask, then carrying out electron beam deposition on a middle adhesion layer and a conductive layer, finally removing the metal mask, and controlling single crack initiation and expansion on a micron stretching table. According to the method, the evolution length, the forming position and the micromorphology of the crack can be accurately controlled.

The utility model relates to processing equipment for adding a coating on a base material, which comprises a deposition chamber, a coating chamber, a coating chamber and a coating chamber, the pulsed electron beam deposition module is arranged on the deposition chamber, the pulsed electron beam deposition module and the deposition chamber jointly form a closed cavity, and the cavity can form a vacuum environment through air exhaust; and the pulsed electron beam deposition module is arranged at the top, or the bottom, or the top and the bottom, or a single side surface or double side surfaces of the deposition chamber. Compared with sputtering coating in the prior art, the pulse electron beam deposition is more excellent in energy consumption due to the pulse characteristic of the pulse electron beam deposition. By adjusting the pulse interval parameter and the energy consumption cost of coating of the base layer material per square meter, 70% can be reduced, in addition, the deposition thickness can be randomly adjusted on line under the working condition through parameter adjustment, the step thickness difference can be realized on the same film, and the relative deposition material utilization rate is excellent, so that the cleaning cost of the target material and the deposition chamber is further saved.

The present invention provides a transparent rare earth zirconate film, wherein the rare earth zirconate has the following chemical formula: Re x Zr 4‑ x O7, wherein 0 < x < 4; Re is selected from one or more of Yb, Gd and Sm. The present invention also provides a method for preparing the transparent rare earth zirconate film of the present invention, comprising the following steps: (1) using an electron beam deposition device and utilizing Re2O3 and ZrO2 target materials to prepare an amorphous film on a substrate; (2) subjecting the amorphous film to an annealing process to obtain the transparent rare earth zirconate film Re x Zr 4‑x O7. The present invention also provides the use of the transparent rare earth zirconate film of the present invention or the transparent rare earth zirconate film prepared by the method of the present invention in a thermal barrier coating. The rare earth zirconate film of the present invention is transparent, so that its transmittance can be directly measured, and the film of the present invention is also resistant to high temperature, and can be used as a thermal barrier coating.

A Schottky barrier diode includes an AlN substrate, an AlN layer formed by metalorganic chemical vapor deposition on the AlN substrate, a Si-doped n-AlN layer formed by metalorganic chemical vapor deposition on the AlN layer, a GaN capping layer, an Ohmic contact on the GaN capping layer, and a Schottky contact on the GaN capping layer, wherein a breakdown voltage of the Schottky barrier diode exceeds 3 kV. Fabricating a Schottky barrier diode includes depositing a first AlN layer on an AlN substrate, depositing a second AlN layer on the first AlN layer, depositing a capping layer on the second AlN layer, forming an Ohmic contact on the capping layer via electron beam deposition followed by rapid thermal annealing, and forming a Schottky contact on the capping layer by electron beam evaporation. The second AlN layer includes silicon-doped AlN, and the capping layer includes GaN.

The invention discloses a (012) crystal face oriented bismuth metal film and a preparation method thereof. The preparation method comprises the following steps: providing a substrate; forming a two-dimensional material film on the surface of the substrate; and depositing bismuth on the two-dimensional material film by adopting an electron beam coating technology to obtain the (012) crystal face oriented bismuth metal film. According to the preparation method, interface engineering is utilized, the two-dimensional material thin film is formed on the surface of the substrate to reduce the forming energy of the (012) crystal face orientation bismuth metal thin film, then low-energy electron beam deposition is utilized to achieve preparation of the (012) crystal face orientation bismuth metal thin film, and the preparation means of the (012) orientation bismuth metal thin film are expanded.

The present invention discloses a high-power X-ray source and its vacuum-external circulating liquid target assembly. The vacuum-external circulating liquid target assembly comprises an electron window and a liquid metal target. After the electron beam passes through the electron window, it strikes the liquid metal target, generating X-rays. The liquid metal target circulates, removing heat deposited by the electron beam and cooling the target. By employing a technique in which the electron beam, after passing through the window, strikes the circulating liquid target outside of a vacuum, the present invention significantly increases the power of the X-ray source and addresses the issues of damage to a fixed target and the inability of in-tube spray-type liquid targets to be used in conventional sealed X-ray sources.

The invention relates to preparation of a bletilla striata polysaccharide film and research on hemostatic performance of the bletilla striata polysaccharide film. According to the method, the bletilla striata polysaccharide film is prepared by adopting a low-energy electron beam deposition technology. The prepared film retains most of functional groups in original powder, the thickness of the film is controllable, bletilla striata polysaccharide can be rapidly released, and compared with the hemostatic effect on gauze, application and gelatin sponge, the bletilla striata polysaccharide has a good application prospect in hemostatic treatment of external and internal injuries.

The invention provides a DIC strain distribution measurement method and system for a micro-nano scale material mechanical test. The method comprises the following steps: S1, generating a spot distribution diagram by using a random algorithm; s2, preparing nanoscale tungsten spots on the surface of the sample according to the spot distribution diagram by adopting a focused electron beam deposition technology; and S3, placing the sample containing the tungsten spots in an in-situ mechanical loading device for mechanical loading, and finally obtaining submicron-scale strain distribution. The invention develops a novel strain distribution measurement technology aiming at a micro-nano scale material mechanical test, nanoscale tungsten spots are prepared on the surface of a sample in a focused electron beam deposition mode by utilizing a spot pattern generated by a random algorithm, submicron scale strain distribution measurement can be synchronously realized in a material deformation test process, and the measurement accuracy is high. And the practicability is high.

The present invention discloses a metal foil cross section and preparation method for electron backscatter diffraction analysis, belonging to the field of sample preparation technology. The preparation method comprises the following steps: cutting and fixing a metal foil sheet, placing the sheet in a scanning electron microscope, selecting a target area of the metal foil, and performing electron beam deposition to obtain a metal foil containing an electron beam deposited protective layer; rotating the metal foil containing the electron beam deposited protective layer by 180°, and then performing ion beam deposition under the condition of an ion beam current of 15nA to obtain a metal foil containing an ion beam deposited protective layer; performing tilt compensation on the metal foil containing the ion beam deposited protective layer, and then performing ion beam etching using a focused ion beam under the condition of an ion beam current of 30nA to obtain a metal foil cross section for electron backscatter diffraction analysis. The preparation method of the present invention can perform large-area cross-sectional processing on metal foil, has high preparation efficiency, and can meet the characterization effect of electron backscatter diffraction analysis.