5 results about "Electron beam deposition" patented technology

The application discloses a kind of based on multi-arc ion plating and ion beam enhanced electron beam evaporation coating device and method, it is related to material processing technical field.Coating chamber is equipped with heater, ion beam enhanced electron beam evaporation assembly includes multiple groups of matched arrangement crucible, electron gun, deflection coil and high-current ion source, multi-arc ion plating assembly includes cathode arc evaporation source array, workpiece motion control mechanism is connected bias power supply, vacuum and gas supply system carries out vacuumizing and gas supply, water supply and power supply system carries out water cooling and heat dissipation and provides operating power supply for each component, control system is respectively connected with each component Signal is used for real-time control and adjustment of each process parameter in deposition process.Integrated structure design and process synergy can complete multi-arc ion cleaning, multi-arc priming and high-current ion enhanced electron beam deposition composite coating full process in coating chamber, simplify operation process, improve coating efficiency and quality.

The application relates to an electron beam evaporation coating device suitable for coating the surface of a hyperboloid optical window, and aims at solving the problem of poor deposition uniformity of a traditional electron beam evaporation on the surface of a hyperboloid sample. The electron beam evaporation coating device comprises a vacuum cavity, a rack and a multi-degree-of-freedom sample table. The multi-degree-of-freedom sample table comprises a lifting device, a rotating device, a main shaft, a lifting bellows and a rotating shaft. The transmission wheel in the rotating device is coupled with the shell of a self-rotation magnetic force coupler through a belt drive. The self-rotation main gear on the first connecting rod is engaged with the self-rotation driven gear on the rotating shaft. The bottom of the main shaft is provided with a rotating frame. The rotating frame is provided with a motor box and a second bearing seat. During electron beam deposition coating, the threads on the lifting lead screw drive the sample lifting slider to move up and down. The self-rotation main gear of the magnetic force coupling drives the driven gear to realize the self-rotation of the sample. The driving gear engages with the spherical gear to realize the movement of the spherical gear along the spherical surface, so that the surface of the hyperboloid sample is uniformly deposited.

The present invention provides a transparent rare earth zirconate film, wherein the rare earth zirconate has the following chemical formula: Re x Zr 4‑ x O7, wherein 0 < x < 4; Re is selected from one or more of Yb, Gd and Sm. The present invention also provides a method for preparing the transparent rare earth zirconate film of the present invention, comprising the following steps: (1) using an electron beam deposition device and utilizing Re2O3 and ZrO2 target materials to prepare an amorphous film on a substrate; (2) subjecting the amorphous film to an annealing process to obtain the transparent rare earth zirconate film Re x Zr 4‑x O7. The present invention also provides the use of the transparent rare earth zirconate film of the present invention or the transparent rare earth zirconate film prepared by the method of the present invention in a thermal barrier coating. The rare earth zirconate film of the present invention is transparent, so that its transmittance can be directly measured, and the film of the present invention is also resistant to high temperature, and can be used as a thermal barrier coating.

A Schottky barrier diode includes an AlN substrate, an AlN layer formed by metalorganic chemical vapor deposition on the AlN substrate, a Si-doped n-AlN layer formed by metalorganic chemical vapor deposition on the AlN layer, a GaN capping layer, an Ohmic contact on the GaN capping layer, and a Schottky contact on the GaN capping layer, wherein a breakdown voltage of the Schottky barrier diode exceeds 3 kV. Fabricating a Schottky barrier diode includes depositing a first AlN layer on an AlN substrate, depositing a second AlN layer on the first AlN layer, depositing a capping layer on the second AlN layer, forming an Ohmic contact on the capping layer via electron beam deposition followed by rapid thermal annealing, and forming a Schottky contact on the capping layer by electron beam evaporation. The second AlN layer includes silicon-doped AlN, and the capping layer includes GaN.

The invention relates to preparation of a bletilla striata polysaccharide film and research on hemostatic performance of the bletilla striata polysaccharide film. According to the method, the bletilla striata polysaccharide film is prepared by adopting a low-energy electron beam deposition technology. The prepared film retains most of functional groups in original powder, the thickness of the film is controllable, bletilla striata polysaccharide can be rapidly released, and compared with the hemostatic effect on gauze, application and gelatin sponge, the bletilla striata polysaccharide has a good application prospect in hemostatic treatment of external and internal injuries.