31 results about "Critical layer" patented technology

Self-aligned sextuple patterning (SASP) processes and mask design methods for the semiconductor manufacturing are invented. The inventions pertain to methods of forming one and / or two dimensional features on a substrate having the feature density increased to six times of what is possible using the standard optical lithographic technique; and methods to release the overlay requirement when patterning the critical layers of semiconductor devices. Our inventions provide production-worthy methods for the semiconductor industry to continue device scaling beyond 15 nm (half pitch).

The invention relates to a display device, and more particularly a flexible display device comprising display component layers and display substrate such that the display remains substantially flat throughout the operating temperatures. The invention further relates a display device, and more particularly a flexible display device comprising display component layers and display substrate such that the stress in at least one layer of the light-emitting module in the display is substantially zero throughout the operating temperature range. These and other objects of the invention are accomplished by providing a flexible display, comprising at least one planar flexible substrate, at least one flexible light-emitting module deposited on the flexible substrate, the light-emitting module including at least one light-emitting layer, an anode, a cathode, and at least one top flexible superstrate on the opposite side of said display from said planar flexible substrate wherein the display is thermoelastically balanced in such a way that the display is always substantially flat, and the stress in at least one layer of the light-emitting module is substantially zero throughout the operating temperature range.

The embodiment of the invention discloses a top plate weaken danger removing method. The top plate weaken danger removing method comprises the steps that a critical layer of an overlying rock mass isdetermined; directional drilling holes are distributed in the critical layer; the directional drilling holes are constructed; and after constriction of the directional drilling holes are completed, staged fracturing is conducted on fracturing equipment by sending the fracturing equipment to the directional drilling holes. The directional drilling holes are accurately controlled in a hard top platerock layer by using the top plate weaken danger removing method, the rock intensity of the hard top plate can further be effectively reduced, the whole continuity of rock is destroyed, the top plateis effectively weakened, the top plate hanging arch area is eliminated or reduced, and the high mine pressure risk of working surface recovery is relieved in advance; and meanwhile, the pressure of anearby roadway rock layer can be lowered through effective collapsing of the whole working surface hard top plate, the supporting mode of a roadway is simplified, the repair work amount of the roadwayis reduced to great degree, and thus the maintenance cost of the roadway is lowered.

The invention discloses a method for improving graphics critical dimension uniformity in a mask, which comprises the following steps in the technical process of photoetching: (1) adding a plurality of auxiliary graphics in areas in which virtual graphics are not permitted to be inserted in a domain before manufacturing the mask, thereby balancing difference of the graphics densities in different local areas; (2) manufacturing the mask in accordance with a revised domain which is added with the auxiliary graphics; and (3) forming chip graphics by the exposure of the photoetching technique. The invention can increase the graphic critical dimension in the chip unit on the mask and the uniformity of a section, thereby improving control of critical layers on a high wafer layer.

The present invention provides a hyper-parameter determination method for the critical convolutional layer of a remote-sensing classification convolution neural network. The method comprises the steps of constructing a convolutional neural network sample set; constructing a convolutional neural network structure; deterring the hyper-parameters of the critical layer of the convolutional neural network; selecting one convolutional layer as the critical layer, presetting the convolutional kernel size of the critical layer, and calculating the convolution scale; based on the convolutional kernel of the critical layer and the convolution scale, calculating the convolution step length according to a preset rule; presetting the convolutional kernels of other convolutional layers to be kernel size, and presetting the convolution step lengths of other convolutional layers to be 1; and conducting the mean-value down-sampling or the maximum-value down-sampling as the subsequent down-sampling. According to the technical scheme of the invention, based on the image input size and the convolution kernel size, the convolution scale concept is proposed and is adaptive to the remote-sensing spatial scale. On the above basis, an input size and convolution scale-based method for jointly determining the hyper-parameters of the critical layers is provided. In this way, the parameter adjustment time required for the algorithm is reduced, and the object-oriented remote-sensing classification precision is improved.

The invention discloses a segmentation method and device for a heart image. The method includes that a layer of heart computed tomography (CT) image between the bottom and the upper part of a heart is searched among all layers of scanned heart electronic computer X-ray tomography images to serve as a first critical layer; the boundary of the heart is searched on the first critical layer to serve as a heart bottom outline, and a surface model is generated according to the heart bottom outline and a heart bottom lowest point to serve as a heart bottom model; the boundary of the heart is searched on all layers of heart CT images above the first critical layer to serve as a heart upper part outline, and a surface model is generated according to the heart upper part outline to serve as a heart upper part model. According to the segmentation method and device for the heart three-dimensional image, the segmentation accuracy can be guaranteed, segmentation calculating amount and complexity can be reduced as far as possible, and image segmentation can be rapidly achieved.

The invention relates to a coal mine rock burst pre-controlling method, particularly to a method for actively controlling motion of coal mine critical layers by using strip filling walls. The method comprises the steps of calculating initial fracture steps of the coal mine critical layers by using a mine pressure theoretical model, determining intervals of the strip filling walls through combining experience safety factors, and calculating widths of the filling walls according to coal bed buried depths, rock stratum volume weights and unidirectional compressive strength of filling materials, and performing construction of the strip filling walls. According to the method, danger relieving measures passively adapted to abrupt fractures of critical layers in the prior art are changed into the measure of eliminating preconditions of fracture of coal mine critical layers in advance, so that pre-defense for coal mine rock burst is achieved. According to the method, the coal mining production efficiency can be improved, the work amount of filling construction of coal mine working faces is reduced, filling materials are saved, and the production cost per unit of coal is reduced.

A method for monitoring overlay alignment on a wafer that includes identifying a target machine, identifying a target process, identifying a plurality of critical layers, obtaining a plurality of overlay data from at least one of designated registration patterns on the wafer as baseline data, providing a plurality of reference overlay data, correlating the plurality of the reference overlay data with the baseline data to obtain overlay error, comparing the overlay error with specifications of the target machine, accepting the baseline data when the overlay error is within the specifications, and performing overlay alignment monitoring with the baseline data.

The invention discloses a mining overburden rock motion law in-situ observation drill hole layout method, which is suitable to be used in the field of mining engineering. The mining overburden rock motion law in-situ observation drill hole layout method comprises the steps of: determining a longitudinal overlapping region of fracture ranges of critical layers of an overburden rock by utilizing a critical layer theory; further determining in-situ observation drill hole layout positions and distance between drill holes at a working surface initial mining stage and a working surface overburden rock periodic fracture period, that is, fracture motion of multiple layers and even all the critical layers of the overburden rock can be observed with the minimal ground drill hole number; and providing a mining overburden rock motion law in-situ observation drill hole layout scheme based on the effect achieve in the step 2. The mining overburden rock motion law in-situ observation drill hole layout method avoids the blindness and randomness of drill hole position determination in a traditional method, greatly improves reliability and utilization rate of ground drill holes for observing a mining overburden rock motion law since the real-time monitoring of the overburden rock multiple critical layer fracture motion can be achieved by a single drill hole, achieves a research target with the minimal ground drill hole number, and ensures the realization of maximum economic benefit.

Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (tcrt) of AlP is greater than lambda / 4nAlP, where nAlP is the index of refraction of InP and lambda is the wavelength, then the DBR can be grown using alternating layers of InP and AlP, wherein the thickness of the AlP is less than the critical thickness. If the critical layer thickness (tcrt) of AlP is greater than lambda / 4nAlP, then the DBR mirror is grown using alternating layers of InP and of an AlP / InP superlattice, wherein the AlP / InP superlattice is comprised of InP and of AlP wherein the thickness of the AlP is less than the critical thickness.

A method for monitoring overlay alignment on a wafer that includes identifying a target machine, identifying a target process, identifying a plurality of critical layers, obtaining a plurality of overlay data from at least one of designated registration patterns on the wafer as baseline data, providing a plurality of reference overlay data, correlating the plurality of the reference overlay data with the baseline data to obtain overlay error, comparing the overlay error with specifications of the target machine, accepting the baseline data when the overlay error is within the specifications, and performing overlay alignment monitoring with the baseline data.

The invention discloses a method for determining the structural support load of double key layers between coal seam group layers and relates to the technical field of coal seam mining. The method comprises the steps that according to the large support load characteristic in the ground pressure characteristics of working faces of the double critical layers between the coal seam group layers during great periodic pressure, a great periodic pressure working face roof structure model is built; according to the great periodic pressure working face roof structure model, it is determined that the support load is the sum of the load applied by the immediate roof weight and the load applied by a ramp step rock beam structure on the lower key layer; according to the support load and the supporting efficiency, the support load of the double-key-layer structure between the coal seam group layers is determined. According to the determined method, on the basis of the actual ground pressure measurement and the physical similar simulation, the obvious characteristics of the ground pressure of the working surfaces are obtained, the structure model of the double key layers between the coal seam group layers is built, the determining method of the support load is provided, and a basis can be provided for determining the support load of the working faces under such condictions.

Disclosed is a critical layer stress adjusting method for solving cracking of a multi-layer film caused by electron beam deposition. Electron beam deposition technology and ion beam assisted deposition technology are combined to adopt, a stress critical layer is deposited by using the ion beam assisted deposition technology, and the other film layers except to the stress critical layer are deposited by using the electron beam deposition technology. The critical layer stress adjusting method can solve the problem that when a thicker film layer is deposited by the electron beams, the film layer is cracked because tension stress borne by the film layer is too high, and the difficulties of film system designing and practical preparation technologies are not increased.

A multilayer coating system is provided. The multilayer coating system includes a substrate, a first metallic layer on the substrate, a first ceramic layer on the first metallic layer, a second metallic layer on the first ceramic layer, and an outermost ceramic layer on the second metallic layer. The multilayer coating system achieves a relatively high overall layer thickness since the critical layer thicknesses of the individual layers do not exceed the multilayer coating.

A system and method is used to optimize print parameters in the printing of functional electronic materials and integrated objects. The method employs a grid pattern to determine drop spacing and further assigns priority to various features to be printed, separating features into layers to be printed. The most critical layers being printed with higher resolution and greater accuracy, the less critical layers being printed at lower resolution.

The invention provides a mixed priority-based mobile medical streaming media data scheduling method. The method comprises the steps of establishing a coordinate system with a playing sequence time axis to be horizontal coordinates, and the layers of layered streaming media data as vertical coordinates; in the above coordinate system, setting a cache region window for streaming media data on the playing sequence time axis with a playing point bu as a starting point; according to the distance relative to the playing point, dividing the cache region window into a plurality of different scheduling regions; setting a critical layer lc on the data hierarchy of the layered streaming of the vertical coordinates; adopting streaming media data above the critical layer as high layers, and streaming media data below the critical layer as low layers. The invention is characterized in that the high-layer and low-layer streaming media data of different scheduling regions in the cache region window per unit time are scheduled in the polling manner according to the global priorities thereof. In this way, the balance between the definition and the fluency is guaranteed on the condition that the bandwidth is limited. The invention further provides a mobile medical streaming media system based on the above scheduling method.

An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.

Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (tcrt) of AlP is greater than λ / 4nAlP, where nAlP is the index of refraction of InP and λ is the wavelength, then the DBR can be grown using alternating layers of InP and AlP, wherein the thickness of the AlP is less than the critical thickness. If the critical layer thickness (tcrt) of AlP is greater than λ / 4nAlP, then the DBR mirror is grown using alternating layers of InP and of an AlP / InP superlattice, wherein the AlP / InP superlattice is comprised of InP and of AlP wherein the thickness of the AlP is less than the critical thickness.

The invention discloses a method for controlling surrounding rock in gob-side entrydriving of a working face of a deep island. The method comprises the following steps of performing pre-cracking and top breaking before stoping of two adjacent working surfaces of the working face of the island, so as to avoid forming a hinge structure at the end surface of the working face, and avoid the hinged rock beam at the critical layer transferring the stoping stress of covering rock of the adjacent working faces to the working face; selecting a constant-drag large-deformation anchor bolt in a gob-side entrydriving support system, increasing the lengths of anchor bolts at the coal wall side and top plate side, deforming the anchor bolts to relieve pressure, and enabling anchor cables to transfer the concentrated stress of the surrounding rock to the farther physical coal wall; slantwise and downwards drilling pressure relief holes in the physical coal wall side with 3 to 4 cycle roof weighting paces in advance at the working face of the island; spraying slurry to the narrow coal column side. The method has the advantages that the stress concentration degree of the deep working face is effectively reduced, the drags of a bracket, a support column and support are reduced, the stoping efficiency of coal sources is improved, the safe and efficient stoping efficiency of the working face is also improved, and the major technical and economic benefits are realized.

An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.

The invention relates to an optimal filling thickness control method for coal gangue and belongs to agricultural reclamation methods for the coal gangue. The control method comprises the steps: under the condition of selected compacting equipment, firstly, determining critical layering thickness of the coal gangue, then, determining the optimal layering thickness according to an object function model with minimal total compacting times, and finally, calculating filling super high amount; and during construction, carrying out filling by adopting a strip stacking method, and controlling the quality of filling and compacting by adopting a leveling method. The method has the advantages that uniform-thickness layered filling is carried out, and thus, the filling effect is the best; and the uniformity is guaranteed to the maximum, the compacting times are reduced to the maximum, the instability and non-uniform settlement of the gangue are lowered, and the leveling of farmland is guaranteed. Critical thickness control is carried out; during the layered filling, the filling thickness cannot exceed critical thickness, so that the control method is the most effective control method for disadvantageous engineering characteristics of the gangue, and disadvantageous characteristics such as weathering, swelling-shrinkage, spontaneous combustion and corrosion of the gangue are effectively controlled. The filling cost of the coal gangue is reduced; and on one hand, the engineering quality is guaranteed, and on the other hand, the engineering cost is reduced.

Disclosed is a critical layer stress adjusting method for solving cracking of a multi-layer film caused by electron beam deposition. Electron beam deposition technology and ion beam assisted deposition technology are combined to adopt, a stress critical layer is deposited by using the ion beam assisted deposition technology, and the other film layers except to the stress critical layer are deposited by using the electron beam deposition technology. The critical layer stress adjusting method can solve the problem that when a thicker film layer is deposited by the electron beams, the film layer is cracked because tension stress borne by the film layer is too high, and the difficulties of film system designing and practical preparation technologies are not increased.

The present invention relates to a design method of a digital mark in a test layout, comprising: step (a) first directly defining a non-key layer digital mark, wherein the non-key layer digital mark has a relatively large length and width; step (b) Multiple virtual patterns of key layers are inserted into the non-key layer digital mark area to form recognizable key layer digital marks. In order to solve the problem in the prior art that the special pattern of the digital mark causes process defects, the invention provides a brand-new layout digital mark design method. The digital mark design method defines a digital mark through non-critical layers, and then fills the digital mark area with a universally existing dummy pattern to form a recognizable uniform digital mark including all physical layers. A more uniform pattern can be obtained throughout the layout by the described setting.

The invention discloses an EMC evaluation model and Gamma-NSGA-II-based conduction interference trap multi-objective optimization design method and relates to the field of electromagnetic compatibility and a genetic algorithm improvement strategy. An EMC evaluation model is established on the basis of a BP neural network, and a conduction emission signal margin value and a total harmonic distortion rate which represent a conduction interference suppression effect are calculated. By taking the margin value, the total harmonic distortion rate, the weight of the wave trap and the cost as optimization objectives, an optimization objective vector Gamma containing an objective importance order is introduced. The Gamma-NSGA-II algorithm is used to continuously evolve the optimal parameters of interference trap. Compared with NSGA-II, when the critical layer individuals are selected, dimensionality reduction is performed on the optimization target vectors according to importance, then rapidnon-dominated sorting is carried out on the critical layer individuals. The trap parameter optimization design method provided by the invention can be selected for inhibiting conduction interference,reducing the weight of the trap, reducing the cost and the like, and is high in scientificity and good in practicability.

The invention discloses a method for improving graphics critical dimension uniformity in a mask, which comprises the following steps in the technical process of photoetching: (1) adding a plurality of auxiliary graphics in areas in which virtual graphics are not permitted to be inserted in a domain before manufacturing the mask, thereby balancing difference of the graphics densities in different local areas; (2) manufacturing the mask in accordance with a revised domain which is added with the auxiliary graphics; and (3) forming chip graphics by the exposure of the photoetching technique. The invention can increase the graphic critical dimension in the chip unit on the mask and the uniformity of a section, thereby improving control of critical layers on a high wafer layer.

The invention discloses a high-temperature-resistant cable based on rock wool and a preparation method thereof. The high-temperature-resistant cable includes a multi-strand wire core unit twisted with each other, and the outer sheath of the multi-strand wire core unit is provided with a silver-plated aramid fiber braided sheath , the silver-plated aramid wire braided sleeve is filled with rock wool; the outside of the silver-plated aramid wire braided sleeve is provided with a first insulating layer, a critical layer and a second insulating layer in sequence along the direction from the inside to the outside; the first insulating layer It is an acrylonitrile-butadiene-acrylate copolymer layer, the critical layer is filled with nano-zirconium carbide, and the second insulating layer is an ethylene-tetrafluoroethylene copolymer layer. The cable prepared by this method has excellent high temperature resistance.

The invention discloses a method for controlling surrounding rock in gob-side entrydriving of a working face of a deep island. The method comprises the following steps of performing pre-cracking and top breaking before stoping of two adjacent working surfaces of the working face of the island, so as to avoid forming a hinge structure at the end surface of the working face, and avoid the hinged rock beam at the critical layer transferring the stoping stress of covering rock of the adjacent working faces to the working face; selecting a constant-drag large-deformation anchor bolt in a gob-side entrydriving support system, increasing the lengths of anchor bolts at the coal wall side and top plate side, deforming the anchor bolts to relieve pressure, and enabling anchor cables to transfer the concentrated stress of the surrounding rock to the farther physical coal wall; slantwise and downwards drilling pressure relief holes in the physical coal wall side with 3 to 4 cycle roof weighting paces in advance at the working face of the island; spraying slurry to the narrow coal column side. The method has the advantages that the stress concentration degree of the deep working face is effectively reduced, the drags of a bracket, a support column and support are reduced, the stoping efficiency of coal sources is improved, the safe and efficient stoping efficiency of the working face is also improved, and the major technical and economic benefits are realized.

The invention provides a method for determining key convolutional layer hyperparameters of a remote sensing classification convolutional neural network, comprising the following steps: construction of a convolutional neural network sample set; construction of a convolutional neural network structure; key layer hyperparameters of a convolutional neural network Determination: Select one of the convolutional layers as the key layer, preset the size of the convolution kernel of the key layer, and calculate the convolution scale; calculate the convolution step size according to the set rules according to the convolution kernel and convolution scale of the key layer; Set the convolution kernel of other convolutional layers as kernelsize, and the convolution step of other convolutional layers as 1; the subsequent downsampling size adopts mean downsampling or maximum downsampling. The invention proposes the concept of convolution scale based on the image input size and convolution kernel size, which is compatible with the remote sensing space scale, and on this basis, provides a joint determination key based on the input size and convolution scale The method of layer hyperparameters can reduce the time required for algorithm tuning and improve the classification accuracy of object-oriented remote sensing.