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Method for preparing graphene membrane

A graphene film and layer graphene technology, applied in the field of graphene film preparation, can solve problems such as harshness, difficulty in obtaining the number of layers, random shape of graphene film, etc., and achieve easy size control, excellent optoelectronic properties, and methods. simple effect

Active Publication Date: 2010-12-15
ZHEJIANG UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] The preparation method of graphene thin film also comprises solution stripping method [X.L.Li, et al.Science 319,1229(2008).], chemical redox method [D.A.Dikin, et al.Nature 448,457(2007).Z.S.Wu, et al.Carbon 47,493(2009).] etc., but the shapes of graphene films prepared by these methods are basically random, and the number of layers of graphene films is difficult to control
Silicon carbide pyrolysis method [C.Berger, et al.Science 312,1191 (2006); A.Tzalenchuk, et al.Nature Nanotechnol 5,186 (2010).] is a kind of method of solid source growth graphene film, The basic steps include treating silicon carbide at a high temperature of about 1400 degrees under ultra-high vacuum to evaporate silicon atoms and allow carbon atoms to form a graphene film on the surface of silicon carbide. This method has high requirements for preparation conditions and is very harsh. It is difficult to obtain a graphene film with a single and uniform layer

Method used

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Examples

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Embodiment 1

[0020] Embodiment 1: adopt highly oriented pyrolysis graphite to prepare graphene film on Ni film

[0021] In SiO 2 (300nm) / Si(500μm) prepared 300nm Ni film, and placed it together with pyrolysis graphite in high vacuum (5.0×10 -8 torr) was heat-treated at 950°C for 12 hours; then, the temperature was raised to 650°C and maintained for 10 minutes, and finally lowered to room temperature, thereby preparing a graphene film on the Ni film.

[0022] Effect: High-temperature heat treatment is used to release carbon atoms from highly oriented cracked graphite, thereby forming a graphene film on the Ni film, and a high-quality graphene film can be grown on Ni. The thickness of the graphene film is about 0.31nm, that is, a single layer graphene (#1).

Embodiment 2

[0023] Embodiment 2: adopt highly oriented pyrolysis graphite to prepare graphene film on Ni film

[0024] A 20nm Ni film was prepared on mica, and it was placed in an ultra-high vacuum (5.0×10 -9 torr); then carry out heat treatment at 850° C. for 18 hours in a hydrogen atmosphere (10 Pa), and then heat it to 600° C. and keep it for 60 minutes, and finally drop to room temperature, thereby preparing a graphene film on Ni.

[0025]Effect: High-temperature heat treatment is used to release carbon atoms from highly oriented cracked graphite, and a single-crystal Ni film is easily formed on mica, and a graphene film is prepared in a hydrogen atmosphere. The thickness of the graphene film is about 0.31nm, that is, a single layer Graphene (#2).

Embodiment 3

[0026] Embodiment 3: adopt graphite powder to prepare graphene film on Ni film

[0027] A 300nm Ni film was prepared on sapphire, and it was placed together with graphite powder in an ultra-high vacuum (1.0×10 -10 torr); then in a mixed atmosphere of hydrogen and argon (5Pa) after heat treatment at 450° C. for 30 hours, the temperature was lowered to room temperature, thereby preparing a graphene film on Ni.

[0028] Effect: High-temperature heat treatment is used to release carbon atoms from graphite powder, and a graphene film is prepared in a mixed atmosphere of hydrogen and argon. The thickness of the graphene film is about 0.94nm, that is, the number of layers of graphene is 3(# 3).

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Abstract

The invention discloses a method for preparing a graphene membrane. Carbon atoms are released from a solid carbon source by a method such as heat treatment, heat evaporation, sputtering, electron beam deposition, laser deposition or plasma deposition to form the graphene membrane on a catalytic layer or a substrate, wherein the solid carbon source is graphite, amorphous carbon, diamond, fullerene or carbon nano tubes. In the method for preparing the graphene membrane, the solid carbon source is used, the method is simple; and the prepared graphene membrane is easy to control in terms of thickness, structure and size, has excellent photoelectric characteristics and is suitable for preparing high-performance photoelectronic devices on a large scale.

Description

technical field [0001] The invention relates to a graphene film, in particular to a preparation method of a graphene film. Background technique [0002] Graphene is a two-dimensional structure material composed of honeycomb single-layer carbon atoms, also known as single-layer graphite; in terms of physical properties, it is generally believed that the material with more than ten layers of graphene stacked is a three-dimensional structure of graphite, carbon nanotubes It is a one-dimensional nanomaterial made of graphene rolled into a barrel. Graphene has excellent two-dimensional electrical, optical, thermal, mechanical properties and chemical stability. Its unique two-dimensional structure and excellent crystallographic quality make it widely used in ultra-fast micro-nano optoelectronic devices, radio frequency devices, clean energy and various Sensors and other fields have important practical value. For example, electrons in graphene follow relativistic quantum mechanic...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 徐明生陈红征吴刚施敏敏汪茫
Owner ZHEJIANG UNIV
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