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Preparation method of graphene on SiC substrate based on Ni film-aided annealing

A graphene and annealing technology, applied in the field of microelectronics, can solve the problems of complex process, high production cost, large energy consumption, etc., and achieve the effects of simple process, low porosity and good continuity

Inactive Publication Date: 2012-06-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantages of this method are: complex process, special removal of catalyst is required, large energy consumption and high production cost

Method used

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  • Preparation method of graphene on SiC substrate based on Ni film-aided annealing
  • Preparation method of graphene on SiC substrate based on Ni film-aided annealing
  • Preparation method of graphene on SiC substrate based on Ni film-aided annealing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Step 1: Clean the 6H-SiC sample to remove surface contamination.

[0023] (1.1) Use NH for 6H-SiC substrate 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0024] (1.2) Use HCl+H to remove the 6H-SiC sample after removing the surface organic residues 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0025] Step 2: Put the 6H-SiC sample into the quartz tube, and heat it with exhaust gas.

[0026] (2.1) Put the cleaned 6H-SiC sample into the quartz tube 5, and place the quartz tube in the resistance furnace 6;

[0027] (2.2) Check the airtightness of the whole preparation equipment, feed the Ar gas with a flow rate of 80ml / min from the air inlet 4, and use the three-way valve 3 to control the Ar gas to enter from the first passage 1 to empty the quartz tube for 30 Minutes, the air in the quartz tube is discharg...

Embodiment 2

[0038] Step 1: Clean the 4H-SiC sample to remove surface pollutants.

[0039] For 4H-SiC substrates, use NH first 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0040] Step 2: Put the 4H-SiC sample into the quartz tube, and heat it with exhaust gas.

[0041] Place the cleaned 4H-SiC sample in the quartz tube 5, and place the quartz tube in the resistance furnace 6; check the airtightness of the entire preparation equipment, and pass into the Ar gas with a flow rate of 80ml / min from the air inlet 4 , and use the three-way valve 3 to control Ar gas to enter from the first channel 1 to empty the quartz tube for 30 minutes, so that the air in the quartz tube is discharged from the gas outlet 7; turn on the power switch of the resistance furnace, and heat the ...

Embodiment 3

[0048]Step A: Clean the surface of the 6H-SiC substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0049] Step B: Place the cleaned 6H-SiC sample in the quartz tube 5, and place the quartz tube in the resistance furnace 6; check the airtightness of the entire preparation equipment, and the flow rate from the air inlet 4 is 80ml / min Ar gas, and use the three-way valve 3 to control the Ar gas to enter the quartz tube from the first channel 1 to empty the quartz tube for 30 minutes, so that the air in the quartz tube is discharged from the gas outlet 7; open the resistance furnace power switch, and the quartz tube is heated up to 1150°C.

[0050] Step C: turn on the water bath 9 power supply, to house CCl 4 Heat the liquid three-necked ...

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Abstract

The invention discloses a preparation method of graphene on a SiC substrate based on Ni film-aided annealing, and is mainly used for solving the problems of non-smooth surface, low continuity and non-uniform layers of graphene prepared by the prior art. The method comprises the following steps of: performing standard cleaning of a SiC sample piece; placing the cleaned SiC sample piece in a quartz tube, carrying CCl4 vapor by Ar into the quartz tube, and reacting SiC with gaseous CCl4 at 750-1150 DEG C to generate a double-layer carbon film; performing electron beam deposition on the Si substrate to obtain a Ni film with thickness of 350-600 nm; placing the carbon surface of the generated double-layer carbon film sample piece on the Ni film, placing in Ar, and annealing at a temperature of 900-1100 DEG C for 10-20 minutes to generate double-layer graphene; and finally removing the Ni film from double-layer graphene sample piece. The method disclosed by the invention has the advantages of simple process and high safety; and double-layer graphene has smooth surface, good continuity and low porosity, and can be used for sealing gas and liquid.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor film material and a preparation method thereof, in particular to a method for preparing graphene on a SiC substrate based on Ni film assisted annealing. technical background [0002] Graphene appeared in the laboratory in 2004. At that time, two scientists, Andre Gem and Kostya Novoselov, from the University of Manchester in the United Kingdom discovered that they could obtain more and more graphene in a very simple way. thinner and thinner graphite flakes. They peeled off the graphite flakes from the graphite, then glued the two sides of the flakes to a special adhesive tape, and when the tape was torn off, the graphite flakes could be split in two. Repeatedly doing this, the flakes got thinner and thinner, and eventually, they got a flake made of just one layer of carbon atoms, which is graphene. Since then, new methods of preparing graphene have emerge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/52C23C16/56
CPCC23C16/0281C23C16/01C01B31/04C23C16/26B82Y30/00B82Y40/00C01B2204/04C01B32/184C30B25/02C23C14/0605H01L21/02378H01L21/02527H01L21/02614H01L21/02661H01L21/02664H01L29/1606
Inventor 郭辉张克基张玉明邓鹏飞雷天民
Owner XIDIAN UNIV
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