25 results about "Bilayer graphene" patented technology

The application discloses a graphene sliding ferroelectric regulation method and device based on defect engineering and belongs to the technical field of two-dimensional ferroelectric materials. In the application, structural defects are introduced into specified monolayers of double-layer graphene, the lattice spatial symmetry is destroyed, and a defect double-layer graphene system with intrinsic polarity is constructed. Then, the system is polarized and regulated by using out-of-plane interlayer sliding, the out-of-plane ferroelectric polarization is reversibly flipped, and a non-typical sliding ferroelectric response is formed. Meanwhile, a three-layer graphene structure is constructed, defects are introduced into specific layer positions, and a defect three-layer graphene system with high polarization intensity is prepared. The system is subjected to double-mode sliding regulation, small-amplitude polarization is quickly switched by using low-barrier in-plane interlayer sliding, and super-high out-of-plane polarization is obtained by using out-of-plane interlayer sliding, and the polarization is reversibly flipped. The application breaks through the limitation of traditional two-dimensional sliding ferroelectric regulation, provides a new design idea for the research and development of high-performance van der Waals ferroelectric devices, and can be applied to the fields of high-density information storage, intelligent sensing and preparation of new microelectronic devices.

A dual-layered graphene-based friction material is a paper matrix that is used as a high friction engagement lining in applications such as clutch plate or wet brake plate linings. The material uses a porous yet elastic fibrous base layer and a top layer containing thermally conductive graphene nanoplatelets mixed with a thermosetting resin. The top layer increases the overall thermal capacity while maintaining sufficient material porosity that allows satisfactory cooling oil flow through the material.

The invention discloses a preparation method of a graphene-diamond heterogeneous junction capable of regulating and controlling the crystallization effect of graphene, the number of layers of graphene films generated on the surface of diamond is effectively regulated and controlled through the synergistic interaction effect or inhibition effect of two kinds of metal, and the crystallization quality of the graphene is guaranteed. The specific method comprises the following steps: sequentially arranging manganese metal, diamond and second metal upwards from the bottom of a quartz tube at intervals, and sealing the quartz tube after vacuumizing; heating the vacuum sealed quartz tube to enable the manganese and the second metal to form gaseous metal, and contacting the gaseous metal with the diamond to form a gas-solid catalytic interface to catalyze and generate graphene; when the second metal is selected from metal capable of reacting with gaseous metal manganese, the second metal has a promoting effect on graphene generation, and a multi-layer graphene film is formed; and when the second metal is selected from metal which cannot react with the gaseous metal manganese, the second metal has an inhibiting effect on generation of graphene, and a single-layer or double-layer graphene film is formed, so that the layer number and thickness of the graphene film are regulated and controlled.

The application provides a method for exciting interband plasmons of double-layer graphene and a prepared device, and belongs to the technical field of optical devices, and comprises the following steps: sequentially laminating a third insulating layer, double-layer graphene and a second insulating layer to form a vertical heterojunction, transferring the vertical heterojunction to a substrate on which a first insulating layer is grown, obtaining a clean initial device substrate through heating separation and solvent cleaning, then preparing a nanoscale metal grating layer on the vertical heterojunction surface of the initial device substrate to form a device intermediate body, and preparing electrodes on the left and right sides of the device intermediate body, so that the electrodes are electrically connected with the double-layer graphene, an electrical regulation channel of the Fermi surface of the double-layer graphene is constructed, and a complete device for exciting interband plasmons is obtained. The nanoscale metal grating array can effectively excite interband plasmons of double-layer graphene, significantly improve the light-plasmon coupling efficiency and realize energy regulation of interband plasmons.

The invention discloses a copper foil-graphene composite material based on CVD (chemical vapor deposition) and a hot rolling embedding method and a preparation process of the copper foil-graphene composite material. The preparation method comprises the following steps: by taking a copper foil of 0.5 mm as a substrate, introducing CH1 / H2 mixed gas (CH15-15sccm and H2 30-70sccm) at 1000-1100 DEG C through a CVD (Chemical Vapor Deposition) method to grow double-layer graphene; and then heating to 380-400 DEG C under the protection of argon, and carrying out single-pass hot rolling in a two-roller mill (the reduction rate is 15%, the total deformation is 75%, the roller speed is 0.3-0.7 m / s, and the rolling force is 150-250 kN). According to the technology, a specific temperature window is matched with single-pass large-deformation rolling, copper matrix dynamic recrystallization and graphene low-damage embedding are achieved, the damage rate of graphene is reduced to be smaller than 5%, the interface bonding strength is improved to 150-180 MPa (improved by 80% compared with a traditional technology), and meanwhile the production period is shortened by 50% or above. The obtained composite material has high conductivity (gt; 5.8 * 10 < 7 > S / m), high strength (the tensile strength is improved by 40%) and excellent thermal conductivity (450W / (m * K)), and is suitable for high-performance electronic devices and energy storage electrodes.

The invention discloses a method for preparing a palladium ditelluride single crystal film by using a molecular beam epitaxy method, and belongs to the technical field of nano material preparation. Comprising the following steps: ultrasonically cleaning a silicon carbide substrate, putting the silicon carbide substrate into a growth cavity, and performing annealing treatment to remove impurities adsorbed on the surface of the substrate; performing flash processing on the annealed silicon carbide substrate for multiple times in a mode of increasing and reducing current to obtain a double-layer graphene surface, and then reducing the temperature of the substrate to a growth temperature; pd and Te are placed in different evaporation sources to be heated, the atomic beam flow rate ratio of Pd to Te is adjusted by controlling the evaporation temperature during growth, Pd and Te grow on a substrate in a co-deposition mode, and baffles of the Pd source and the Te source are opened at the same time; and after the growth is completed, closing the Pd source baffle plate and the Te source baffle plate, and annealing the substrate. According to the method, the preparation conditions of the thin film can be accurately regulated and controlled, so that the controllable growth of the thin film material is achieved.

The invention relates to the technical field of OLED display devices, and discloses an organic light-emitting structure, a display panel and a preparation method thereof.The organic light-emitting structure comprises a hole injection layer and a light-emitting layer which are arranged in a stacked mode, and the hole injection layer is arranged on the side, close to an anode substrate, of the light-emitting layer; the hole injection layer is a nitrogen-doped double-layer graphene film, and the energy level of the nitrogen-doped double-layer graphene film is 5.0-6.0 eV; metal is selected as a substrate, a carbon source and a nitrogen source are mixed, premixed gas is introduced into a CVD reaction chamber at a preset temperature, a nitrogen-doped double-layer graphene thin film is formed on the surface of an anode substrate, and after the CVD reaction chamber is cooled to the room temperature, the nitrogen-doped double-layer graphene thin film is transferred to the surface of an anode. And a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer and a cathode are sequentially evaporated. The injection barrier of the anode and the hole transport layer can be reduced, and the working voltage of the device is reduced; and meanwhile, the light emitting performance and the electrical performance of the device can be improved by introducing the double-layer graphene structure.

The application relates to an electrochemical device and an electronic device, the electrochemical device comprising a negative electrode sheet and a solid-state electrolyte; the negative electrode sheet comprises a negative electrode material layer, and the solid-state electrolyte is in contact with the negative electrode material layer; the negative electrode material layer comprises a negative electrode active material, and the negative electrode active material is composed of micrometer silicon and double-layer graphene material coating the micrometer silicon; wherein a first graphene material forms a first mixed phase with the micrometer silicon, the first mixed phase is subjected to heat treatment to form a second mixed phase, and then the second mixed phase forms a third mixed phase with a second graphene material, and the third mixed phase is subjected to heat treatment to form the negative electrode active material; the first graphene material accounts for 10%-30% of the mass percentage of the first mixed phase; and the second graphene material accounts for 5%-20% of the mass percentage of the third mixed phase.

A low-threshold optical bistable switch design method based on a double-layer graphene light power system comprises the following steps that (1) the double-layer graphene light power system is established, the system is subjected to the combined action of pump light with the frequency being omega pu and probe light with the frequency being omega pr, and the amplitude of a pump field is Epu, and the amplitude of a probe field is Epr; the double-layer graphene of the double-layer graphene light power system is arranged in parallel, and an electric field vertically acts on a graphene film plane; 2) deducing a correlation quantity of the optical bistable characteristic; the definition formula of the dimensionless linear optical polarizability is shown as follows: 3) regulating and controlling the phonon-pumping field detuning amount delta n through the applied pumping field frequency; the phonon-exciton coupling strength g is controlled through the length of the graphene film; and the exciton-pumping detuning amount delta ex is regulated and controlled by adjusting the frequency of a pumping field. The invention provides a new method for designing low-threshold, single-channel and dual-channel optical bistable switches.

The invention provides a double-layer graphene inter-band plasmon excitation method and a prepared device, and belongs to the technical field of optical devices.The double-layer graphene inter-band plasmon excitation method comprises the steps that a third insulating layer, double-layer graphene and a second insulating layer are sequentially stacked to form a vertical heterojunction, then the vertical heterojunction is transferred to a substrate on which a first insulating layer grows, and a second insulating layer is formed; a clean initial device substrate is obtained through heating separation and solvent cleaning, then a nanoscale metal grating layer is prepared on the surface of a vertical heterojunction of the initial device substrate, a device intermediate is formed, electrodes are prepared on the left side and the right side of the device intermediate, the electrodes are electrically connected with the double-layer graphene, an electrical regulation and control path of a double-layer graphene Fermi surface is constructed, and the double-layer graphene Fermi surface is formed. And a complete device for exciting the inter-band plasmons is obtained. Through the nanoscale metal grating array, double-layer graphene inter-band plasmon can be effectively excited, the light-plasmon coupling efficiency is remarkably improved, and inter-band plasmon energy regulation and control are achieved.

According to the light superconductive carbon fiber composite cable and the preparation method thereof provided by the invention, the problem of resistance loss caused by grain boundary scattering in a graphene cable is solved by combining a graphene grain boundary repairing technology of a metal state on the surface of a topological insulator. The preparation method comprises the following steps: directionally depositing Bi2Se3 nanosheets on a graphene crystal boundary by using argon current carrying under the condition of 450-550 DEG C through a chemical vapor deposition process to form a continuous conductive channel. According to the method, complex lattice matching is not needed, the strict requirement of double-layer graphene on the magic angle precision is avoided, and the process error-tolerant rate is high. The surface metal state of the topological insulator improves the conductivity of the graphene by 20%-30%, and meanwhile, a dissipation-free topological edge state is reserved. The technology is combined with the light superconductive carbon fiber composite cable, so that the conductivity and mechanical stability of the cable are remarkably improved, and the light superconductive carbon fiber composite cable has a wide application prospect.

The application discloses a preparation method of a double-layer graphene film, which comprises the following steps: S1, introducing hydrogen and methane into a vapor deposition system to perform a vapor deposition reaction, and growing a graphene core with a double-layer graphene domain on a substrate; S2, introducing oxygen into the vapor deposition system; and S3, increasing the methane partial pressure and continuing to grow. The method for directly growing the double-layer graphene film by the chemical vapor deposition method of the application firstly forms a double-layer graphene small core; then the unstable graphene core is etched and removed by introducing oxygen; finally, the methane partial pressure is increased to promote the growth of the double-layer graphene, so that the double-layer graphene film with a second-layer graphene layer area being similar to a first-layer area is prepared. Moreover, the method of the application can form the double-layer graphene film with an arbitrary twist angle.

A maskless, patterned graphene film is produced through use of a tunable metal as a catalyst for graphene growth. The metal layer contains precisely defined textures that control the formation of the graphene film. Specifically, graphene growth can be controlled from F-LG (few layer graphene) down to 2-LG (2-layer graphene) and 1-LG (1-layer graphene). More than one texture can be created to form maskless patterns of graphene. Once the graphene layer(s) are grown, the film can be released from the metal and applied to any form and shape of rigid or flexible substrate for a variety of different applications where graphene cannot be normally grown directly.

The invention discloses a preparation and transfer method of a graphene-based peelable Ga2O3 film. The specific scheme is as follows: firstly, transferring at least two layers of graphene to an Al2O3 single crystal substrate through wet transfer; then, growing a Ga2O3 thin film on the Al2O3 / graphene substrate; and finally, the Ga2O3 film is peeled off from the Al2O3 single-crystal substrate, the graphene and the Ga2O3 film are combined together through a relatively weak Van der Waals force, so that the Ga2O3 film can be easily peeled off from the Al2O3 / graphene substrate, and the crack-free Ga2O3 film can be transferred under the assistance of the Ni stress layer. According to the method, at least two layers of graphene are transferred to the Al2O3 single crystal substrate, the graphene is used as the sacrificial layer, the Ga2O3 film is successfully stripped, and the method can be used for construction of a Ga2O3-based vertical structure device or preparation of a flexible device.

Systems and methods are provided for fabricating an assembly with a controllable magnetic state and ferromagnetic resonance. A layer of twisted bilayer graphene is positioned in contact with a transition metal dichalcogenide to form a structure with an interface between the twisted bilayer graphene and the transition metal dichalcogenide. Energy is applied to the interface to adjust one of a magnetic state associated with the interface and a ferromagnetic resonance associated with the interface.

The application discloses a structure and manufacturing process of a heat dissipation substrate of an inverter module, and the structure comprises an upper end cover, a lower end cover and a water channel layer between the two, the lower end cover is provided with holes at both ends as a water inlet and a water outlet respectively, and double-layer graphene is formed on the upper surface of the lower end cover; the water channel layer is provided with a plurality of water channels arranged side by side along the long side of the heat dissipation substrate, one end of the water channel is located above the water inlet and communicates with the water inlet, and the other end of the water channel is located above the water outlet and communicates with the water outlet; double-layer graphene is formed on the lower surface of the upper end cover, and one or more welding areas are arranged on the upper surface of the upper end cover and used for mounting the inverter module. The heat dissipation substrate manufacturing process is based on the instantaneous liquid phase diffusion welding process, and copper foils covered with graphene are placed as intermediate layers between the lower end cover and the water channel layer and between the water channel layer and the upper end cover, so that the reliability and heat conduction characteristics of the heat dissipation substrate structure are further improved.

The application belongs to the technical field of photoelectric detectors, and particularly relates to a pn junction type gallium oxide-based self-powered ultraviolet detector and a preparation method thereof. The detector comprises a substrate, a p-Cr2O3 layer, an n-Ga2O3 layer, a double-layer graphene layer, a first metal electrode and a second metal electrode. The p-Cr2O3 layer is located on one side of the substrate, the area of the n-Ga2O3 layer is smaller than that of the p-Cr2O3 layer, the n-Ga2O3 layer and the second metal electrode are both located on the side of the p-Cr2O3 layer away from the substrate, and the n-Ga2O3 layer and the second metal electrode do not directly contact each other. The double-layer graphene layer is located on the side of the n-Ga2O3 layer away from the p-Cr2O3 layer, and the first metal electrode is located on the side of the double-layer graphene layer away from the n-Ga2O3 layer. The p-Cr2O3 layer and the n-Ga2O3 layer form a Cr2O3 / Ga2O3 pn junction. The detector can work under 0V bias, has the characteristics of zero-power consumption for detecting ultraviolet light signals, and has wide applications in military and civilian fields such as missile tracking, ultraviolet communication and corona monitoring.

The present disclosure provides a method of manufacturing a biosensor for detecting a biomarker of Alzheimer's disease, comprising steps of depositing an aluminum oxide film on a Si substrate by an atomic layer deposition system to form an Al2O3 / Si substrate; depositing electrical contacts Cr / Au on the Al2O3 / Si substrate by a thermal evaporator to form a source, a drain and a planar gate on the Al2O3 / Si substrate; providing a bilayer graphene on the Al2O3 / Si substrate by thermal annealing under a vacuum environment; providing a bilayer graphene to a low-damage plasma treatment (LDPT) with a mixture of oxygen and hydrogen to form a graphene oxide / graphene (GO / G) layered composite on the Al2O3 / Si substrate; and immobilizing an antibody on a surface of the GO / G layered composite through a reaction between amine groups of the antibody and carboxyl groups of GO of the GO / G layered composites, wherein the antibody is specific for p-tau217 protein.

This application discloses an adjustable planar prism. It includes, from top to bottom, an electrically conductive structure layer, a dielectric substrate, and a metal backplate. The electrically conductive structure layer includes an insulating layer, on which multiple spaced metasurface basic units are disposed. Each metasurface basic unit includes two graphene strips symmetrically arranged on the upper and lower surfaces of the insulating layer. This adjustable planar prism employs a structure design of a double-layer graphene grating, a dielectric substrate, and a metal backplate, enabling perfect dispersion of the anomalous reflection angle of broadband terahertz waves. Due to the electrically tunable characteristics of graphene, the Fermi level of the graphene in the unit can be changed by applying an external bias voltage, allowing for convenient and rapid dynamic adjustment of the dispersion angle range of the reflected beam. Furthermore, the double-layer electrically biased structure composed of two symmetrically arranged graphene strips facilitates the application of bias voltage and is easy to fabricate.

The invention relates to the technical field of OLED display devices, and discloses an organic light-emitting structure, a display panel and a preparation method thereof.The preparation method comprises the steps that metal is selected as a substrate, a carbon source, a metal source and a nitrogen source are mixed, premixed gas is introduced into a CVD reaction chamber at the preset temperature, and a nitrogen and metal co-doped double-layer graphene film is formed on the surface of the metal substrate; meanwhile, a hole injection layer, a hole transmission layer, an electron blocking layer, a light-emitting layer, a hole blocking layer and an electron transmission layer are sequentially evaporated; and after the CVD reaction chamber is cooled to room temperature, transferring the nitrogen and metal co-doped double-layer graphene film to the surface of the electron transport layer. According to the invention, the injection barrier of the cathode and the electron transport layer can be reduced, and the introduction of nitrogen and metal atoms can realize higher carrier mobility and reduce the gain of the working voltage of the device; and meanwhile, the light emitting performance and the electrical performance of the device can be improved by introducing the double-layer graphene structure.

The application discloses a graphene separation membrane, which comprises a support layer and a separation layer, and the separation layer is a double-layer graphene film with nano-pores. The application adopts a double-layer CVD graphene film as a separation layer material of a composite membrane, which better improves the problems of easy breakage, high requirement for raw materials and high cost of a single-layer CVD graphene film applied in a separation membrane field, and obviously improves the performance, and is suitable for a separation membrane of a thin film conductance method TOC analyzer. A preparation method of the graphene separation membrane is also disclosed, which prepares a double-layer graphene separation membrane by using a laminated transfer graphene film technology, avoids technical difficulties and material limitations of preparation of a large-area continuous double-layer and multi-layer CVD graphene film material, introduces high-density ordered nano-pores into the double-layer graphene film prepared by using a plasma etching method for the laminated transfer method, and guarantees the selectivity and permeability of the graphene separation membrane.

The application relates to a negative electrode active material and a preparation method thereof, and the negative electrode active material comprises micrometer silicon and double-layer graphene material coating the micrometer silicon; wherein a first graphene material forms a first mixed phase with the micrometer silicon, the first mixed phase forms a second mixed phase after heat treatment, and then forms a third mixed phase with a second graphene material, and the third mixed phase forms the negative electrode active material after heat treatment; the first graphene material accounts for 10-30% of the mass percentage of the first mixed phase; and the second graphene material accounts for 5-20% of the mass percentage of the third mixed phase.

The invention relates to an ultralow-temperature-resistant storage battery negative electrode lead paste and a preparation method thereof. The ultralow-temperature-resistant storage battery negative electrode lead paste comprises the following components in parts by weight: 1000 parts of lead powder; 80 to 100 parts of sulfuric acid; 80 to 100 parts of water; 0.5 to 1.5 parts of short fibers; 5.0 to 15.0 parts of superfine barium sulfate; 1.2 to 11.0 parts of a conductive additive; 0.4 to 12.0 parts of a polymer; 0.1 to 3.0 parts of sodium dodecyl benzene sulfonate; 2.0 to 6.0 parts of humic acid; 2.0 to 6.0 parts of lignin; according to the invention, the stable composite polymer is introduced as a support body, so that the shrinkage of the polar plate can be effectively resisted at-40 DEG C or below, and a pore structure required by reaction is maintained, so that the battery can still keep effective discharge at extremely low temperature; the conductive performance of the superconducting carbon black-double-layer graphene-nano silver powder composite conductive system is obviously superior to that of a traditional material, and more importantly, a stable three-dimensional conductive framework is formed by functional complementation of all the components.

According to one embodiment of the present invention, an Andreev level qubit device is provided, the device comprising: a structure including an upper insulating layer, a lower insulating layer and multilayer graphene, which is positioned between the upper insulating layer and the lower insulating layer and has a conductor length (L); first and second superconductor layers that are in contact with both sides of the multilayer graphene and have a superconductor coherence length (ξ); an insulating deposition layer deposited on the upper insulating layer and the first and second superconductor layers; and a gate electrode formed on the insulating deposition layer at at least a portion of a region under which the multilayer graphene is positioned, wherein an energy gap (ΔE) of an Andreev level is adjusted by a gate voltage applied to the gate electrode.

The application discloses a membrane separation reaction cell for in-situ characterization of X-ray photoelectron spectroscopy, and belongs to the technical field of material surface analysis. The reaction cell comprises a support window with micropores, and the innovative point of the reaction cell is that a hexagonal boron nitride (h-BN) nanosheet film is used as a sealing material for sealing the micropores, instead of a traditional double-layer graphene film. Since the h-BN is an excellent insulator, the application can effectively solve the surface charge accumulation problem caused by the graphene sealing film when a non-conductive sample is characterized, and more stable and more accurate XPS signals can be obtained. The application is particularly suitable for high-precision, in-situ and working condition research on the surface chemical state of insulators, semiconductors and other materials in a gas or liquid phase reaction environment, and the application range of the in-situ XPS technology is expanded.