Graphene photoeletric modulator based on slot waveguide

Abstract

The invention discloses a graphene photoelectric modulator based on a slot waveguide, which belongs to the field of integrated photons and silicon-based photonics. An optical modulator includes substrate layer, silicon optical waveguide, dielectric filling layer and electrode structure. The silicon optical waveguide structure is buried in the substrate layer, and the silicon optical waveguide is aMach-Zehnder interference structure composed by a silicon slot waveguide, including a slot waveguide splitter, a first slot waveguide, a second slot waveguide and a slot waveguide combiner. The firstslit waveguide consists of a first silicon waveguide and a second silicon waveguide; the second slot waveguide consists of a second silicon waveguide and a third silicon waveguide; a first graphene layer and a third graphene layer are covered on the first slot waveguide; a second graphene layer and a third graphene layer are covered on the second slot waveguide; the third graphene layer is separated from the first graphene layer and the second graphene layer through the dielectric filling layer; The electrode structure includes a first metal layer, a second metal layer and a third metal layer, and the three metal layers are respectively deposited on the first graphene layer, the second graphene layer and the third graphene layer. The double-layer graphene only overlaps on the slot of theslot waveguide, thereby enhancing the interaction between the graphene and the light and increasing the modulation rate. The graphene photoelectric modulator based on the slot waveguide has the advantages of large bandwidth, high modulation rate and compact structure, thereby providing an effective solution for building large bandwidth, high density and high speed on-chip system.

Description

technical field [0001] The invention relates to the field of integrated optics and silicon-based photonics, in particular to a graphene photoelectric modulator based on a slit waveguide, and more specifically uses the confinement of light by a silicon-based slit waveguide to enhance the interaction between graphene and light fields to achieve high density , Large bandwidth, high-speed silicon-based optical modulator. Background technique [0002] Silicon-based optoelectronics technology has become the key technology with the most development potential in the optical interconnection technology generally recognized by the industry because of its advantages of high-density integration, large bandwidth, high transmission rate and anti-interference, and compatibility with traditional CMOS processes. As the core device in optical interconnect technology, optical modulator has important research significance. In recent years, due to the superior optical and electrical properties o...

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Problems solved by technology

In order to be able to transmit in the waveguide, the size of the silicon-based waveguide must meet the single-mode cut-off co

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