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Graphene preparation method based on Cu film assisted annealing

A graphene and annealing technology, applied in the field of microelectronics, can solve the problems of difficulty in manufacturing graphene, expensive single crystal SiC, uneven number of layers, etc., and achieve the effects of low porosity, smooth surface and good continuity

Inactive Publication Date: 2012-06-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single crystal SiC used in the thermal decomposition of SiC is very expensive, and the grown graphene is distributed in an island shape, the number of layers is uneven, and the size is small, so it is difficult to manufacture graphene in a large area

Method used

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  • Graphene preparation method based on Cu film assisted annealing
  • Graphene preparation method based on Cu film assisted annealing
  • Graphene preparation method based on Cu film assisted annealing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1: Remove sample surface contamination.

[0025] Clean the surface of the 4-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0026] Step 2: Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level.

[0027] Step 3: growing the carbonized layer.

[0028] in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 900 ° C, and then the flow rate of 40 ml / min is introduced into the reaction chamber. 3 h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 8min.

[0029] Step 4: growing a 3C-SiC epitaxial film on the carbonized layer.

[0030] R...

Embodiment 2

[0043] Step 1: Remove sample surface pollutants.

[0044] Clean the surface of the 8-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0045] Step 2: Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level.

[0046] Step 3: growing a carbonized layer.

[0047] in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1000 ° C, and then the flow rate of 40ml / min is introduced into the reaction chamber. 3h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 6min.

[0048] Step 4: growing a 3C-SiC epitaxial film on the carbonized layer.

[0049] Rapidly...

Embodiment 3

[0057] Step A: Clean the surface of the 12-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0058] Step B: Put the Si substrate substrate into the reaction chamber of the CVD system, and vacuumize the reaction chamber to 10 -7 mbar level.

[0059] Step C: In H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1100 ° C, and then the flow rate of 40ml / min is introduced into the reaction chamber. 3 h 8 , for 3 min to grow a carbonized layer on the Si substrate.

[0060] Step D: Rapidly raise the temperature of the reaction chamber to the growth temperature of 1250°C, and feed the SiH with flow rates of 35ml / min and 70ml / min respectively. 4 and C 3 h 8 , to...

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Abstract

The invention discloses a graphene preparation method based on Cu film assisted annealing, which is used mainly for solving the problems of small area, poor continuity and nonuniform layering of graphene preparation in the prior art. The method includes: firstly, growing a carbonized layer for transition on a Si substrate 4-12 inches in size; secondly, growing a 3C-SiC heteroepitaxal film at the temperature of 1100 DEG C to 1250 DEG C, and using C3H8 and SiH4 as growth source gases; thirdly, allowing 3C-SiC to react with gaseous CCl4 at 800-1000 DEG C to generate a double-layer carbon film; fourthly, placing a carbon side of the double-layer carbon film sample on a Cu film; and fifthly, placing the double-layer carbon film and the Cu film in Ar atmosphere, and annealing at 900-1100 DEG C for 10-25 minutes to generate double-layer graphene. The double-layer graphene generated by the method has smooth surface, is large in area and low in porosity, and can be used for sealing gases and liquids.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor film material and a preparation method thereof, in particular to a graphene preparation method based on Cu film assisted annealing. technical background [0002] Graphene appeared in the laboratory in 2004. At that time, two scientists, Andre Gem and Kostya Novoselov, from the University of Manchester in the United Kingdom discovered that they could obtain more and more graphene in a very simple way. thinner and thinner graphite flakes. They peeled off the graphite flakes from the graphite, then glued the two sides of the flakes to a special adhesive tape, and when the tape was torn off, the graphite flakes could be split in two. Repeatedly doing this, the flakes got thinner and thinner, and eventually, they got a flake made of just one layer of carbon atoms, which is graphene. Since then, new methods of preparing graphene have emerged in an endless strea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B33/02C30B29/02
Inventor 郭辉张克基张玉明邓鹏飞雷天民
Owner XIDIAN UNIV
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