57results about How to "High surface coverage" patented technology

A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.

The invention provides preparation of a silver-doped nickel oxide film and an application of the nickel oxide film in a perovskite solar cell as a hole transport layer. The preparation of the silver-doped nickel oxide film includes: dissolving nickel nitrate hexahydrate and silver nitrate in a diethylamine-containing glycol solution, stirring the mixture at a room temperature for 12-16 h, preparing a mixed precursor solution of nickel nitrate and silver nitrate with the metallic ion total concentration of 0.5-1.5 M, wherein the ratio of Ag to Ni is 1-2:100; and performing spin coating of the mixed precursor solution of nickel nitrate and silver nitrate on a substrate with the rotating speed of 2500-3500 rmp, and then performing heating at the temperature of 300 DEG C for 60-80 min. According to the silver-doped nickel oxide film, the light transmission and the hole transport capability are better, the degree of crystallization and the surface coverage rate of the perovskite film grown on the silver-doped nickel oxide film are higher compared with the pure nickel oxide film, and the reverse planar perovskite solar cell prepared by the nickel oxide film as the hole transport layer is advantaged by higher photoelectric conversion efficiency and environmental stability.

The invention discloses a method for repairing a concrete crack by means of pulse electrodeposition, wherein a reinforcing steel bar in concrete is taken as a cathode and a titanium screen is taken as an anode, and the reinforcing steel bar and the titanium screen are arranged near the concrete; a 0.05-0.50 mol per liter zinc saline solution or magnesium saline solution is taken as an electrodeposition solution, and the concrete is immersed into the electrodeposition solution; a pulse power source is adopted, and the on/off time of pulse is between 0.6 and 1 ms; the current density exerted on the surface of the concrete is between 0.25 and 3 amperes per square meter; and the concrete provided with the crack is repaired by means of electrodeposition. The invention also discloses an applicable device for the method for repairing the concrete crack by means of pulse electrodeposition. The method for repairing the concrete crack by means of pulse electrodeposition and the repairing device thereof have the advantages of simple structure, convenient operation, low cost, good effect and so on, and are suitable for concrete structures in a water environment and concrete structures which are difficult to be repaired by the prior repairing technology or have high repairing cost.

An implant for blood vessels, in particular to influence the flow of blood in the area of arteriovenous malformations. The implant has a wall comprising individual filaments combined so as to form a circular braiding, the circular braiding being positioned in elongated form and with a reduced diameter in an insertion catheter and expanding at the placement site thus adapting to the vessel diameter and increasing its braiding density.

A pile fabric such as may be used in automotive and furniture upholstery and other applications which fabric incorporates a pile surface formed from variable height fibers. The pile is made up of a first group of fibers having a first height and at least a second group of fibers having a second height which is on average less than the height of the first group. A method of formation is also provided.

The invention relates to cleaning and food processing aide applications whereby unique compositions of GRAS or food additives were developed to assess the effectiveness of cleaning procedures at various stages of the processes and to assess the delivery and adherence of food processing aides. Employing such solutions to clean and/or sanitize processing equipment provides a method to evaluate and enhance the effectiveness of procedures used to remove the respective fluorescent detergents, sanitizers or organic residues from equipment or niches and reduce contamination. Similar compositions were developed for assessing processing aide food surface coverage, contact time and adherence. In addition, unique compositions were invented that increase processing aide coverage and adherence. Quantification of the presence or absence of the fluorescent GRAS or food additive compositions produces results for validation, monitoring and/or verification of food safety intervention procedures/processes.

The present invention provides a perovskite LED taking a ZnO nanometer wall network as an electron injecting layer and a preparation method thereof. The perovskite LED taking the ZnO nanometer wall network as the electron injecting layer and the preparation method thereof are able to effectively limit the generation of drain current in a device, reduce the generation rate of nonradiative recombination of a carrier, and finally realize the preparation of a high-external quantum efficiency perovskite green ray LED. The perovskite LED comprises a transparent conductive substrate, and the substrate is provided with an n-type ZnO nanometer wall network, a CH3NH3PbBr3 luminescent layer, a p-type cavity supplying layer and an electrode. The perovskite LED taking the ZnO nanometer wall network as the electron injecting layer and the preparation method thereof employ a two-dimensional ZnO nanometer wall network as the electron injecting layer of the perovskite green ray LED and adopt the nanometer wall network frame structure to limit the diffusion of the perovskite forerunner liquid in the stage of the solvent drying so as to improve the surface coverage rate of the CH3NH3PbBr3 luminescent layer. Besides, the defect of a traditional perovskite LED is overcome, the generation channel of drain current in a device is effectively inhibited, and the efficient radiative recombination of carriers in the condition of the electron injection is prompted.

The invention relates to an alkali metal air chamber manufacturing method for improving the relaxation resistance of a coating based on Plasma hydroxylation. According to the method, a plasma cleaningmachine is adopted for hydroxylating the inner surface of an air chamber; since a tail pipe of the alkali metal air chamber is thin, the operation that a thick cleaning solution needs to be extractedby adopting a capillary glass tube after cleaning through a traditional hydroxylation method is omitted, so that the air chamber is prevented from being pricked during a cleaning solution extractionprocess, and the problems of time waste, effort waste, nonideal consistency and nonideal relaxation resistance during the current air chamber manufacturing process are solved; and meanwhile, more hydroxide radicals can be formed on the glass surface, and no cleaning solution removal and follow-up drying is needed, so that the contact time of the hydroxide radicals and the outside environment is shortened, the hydroxide radical pollution is reduced, more hydroxide radical number can be maintained, a smooth and uniform covering surface is realized during the organochlorosilane reaction process,the surface covering rate on paramagnetic impurities is increased, and the relaxation resistance of the coating is improved. In addition, multiple air chambers can be processed at the same time, so that the consistency and the repeatability in manufacturing the coating are improved.

The invention provides a preparation method for a perovskite thin film capable of improving purity and reducing pin holes. The preparation method specifically comprises the steps of dissolving CH<3>NH<3>X (x can be Cl, Br or I) powder into anhydrous isopropyl alcohol to form a CH<3>NH<3>X solution, and then spraying the solution on a substrate by a spray pyrolysis method to form a CH<3>NH<3>X film layer; then covering the CH<3>NH<3>X thin film with the substrate coated with a PbX<2> thin film; and carrying out high-temperature annealing to enable the CH<3>NH<3>X steam molecules to be dispersed in the PbX<2> thin film, wherein the PbX<2> existing in mesopores also can be fully reacted. According to the preparation method, the CH<3>NH<3>X is in contact reaction with the PbX<2> thin film in a form of thin film; and compared with the powder type contact, the point contact can be replaced by surface contact, so that the problem of the pin holes caused by uneven contact existing in the current powder contact method can be effectively solved.

A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge. A large-area sinter element is situated in the contact area's center region, and circular sinter elements is situated in a contact area edge region. The sinter elements may also have notches. Also described is a related device.

A sliding part in which a surface coverage ratio of copper in the sliding part increases. A bearing which is the sliding part is formed by filling the raw powder into the filling portion of the forming mold, compacting the raw powder to form a powder compact, and sintering the powder compact. A copper-based raw powder is composed of a copper-based flat raw powder having an average diameter smaller than that of an iron-based raw powder and an aspect ratio larger than that of the iron-based raw powder, and a copper-based small-sized raw powder having the average diameter is smaller than that of the copper-based flat raw powder. The copper segregates at the surface of the sliding part. In the bearing in which the copper-based flat powder segregates at the surface, the surface is covered with the copper-based small-sized raw powder that has emerged on the surface, as well as the copper-based flat raw powder, thereby it is possible to increase the surface coverage ratio of copper. Furthermore, containing calcium fluoride improves the seizure resistance.

The invention discloses a chitosan/perovskite nanometer composite film as well as a preparation method and application thereof. The preparation method comprises the following steps: (1) preparing chitosan iodide; (2) dissolving methylamine salt, the chitosan iodide and lead iodide or lead chloride in DMF in a closed environment; introducing a protective gas; stirring for 6h to 10h at the temperature of 55 to 65 DEG C to prepare a perovskite precursor solution; (3) spin-coating the obtained perovskite precursor solution to obtain the chitosan/perovskite nanometer composite film. The prepared chitosan/perovskite nanometer composite film is applied to a solar photocell structure and has the advantages of effectively increasing the filling rate of a solar cell and also improving the energy transformation efficiency of the cell to a certain extent. The preparation method disclosed by the invention is clean, simple and free of pollution in preparation process and is suitable for large-scale production.

The invention relates to an additive and a method for texturing of a diamond wire cut polycrystalline silicon chip. The additive is prepared from components as follows: acetic acid, triethanolamine, sodium dodecyl benzene sulfonate, polyethylene glycol, triamine citrate, perfluoropolyether, hydrofluoric acid and water in the mole ratio being (15-25):(10-25):(1-10):(15-25):(1-10):(1-10):(1-5):(2-100). The texturing additive can better refine the inside structure of an etch pit of the silicon chip to form more and smaller micro etch pits, the surface porosity is higher, the surface etch pit holes are denser, the size of the etch pits is reduced, small hole structures are produced on the edge and at the bottom of the etch pits, and the reflectivity of the silicon chip is greatly reduced.

A method of decorating a surface of a workpiece includes the step of positioning a decorating film over the surface, wherein the decorating film has a first side and an opposite second side with a decorating pattern facing the surface. The decorating film is then fitted tightly on the surface by applying negative pressure therebetween. Next, the decorating pattern is transferred onto the surface by providing a heated gas current to heat the decorating film.

The invention relates to a method for saturated shot blasting of a stainless steel spring. The method is characterized by comprising the steps as follows: (1), steel shots are added in a shot blasting machine, and shot blasting is carried out on the stainless steel spring; and (2), the external diameter of the stainless steel spring is measured every five minutes, and when the variation values of the external diameters measured twice are within the range of 0 to 0.02 mm, the stainless steel spring reaches the saturated shot blasting to finish the shot blasting process. The external diameter of the steel shots is 0.4 mm. The method has the advantages that (1), the stability of the external diameter of the spring can be improved; (2), the surface coverage rate of the spring is higher, and the fatigue life is prolonged; and (3), the separation working hours can be reduced, the mounting is more facilitated, and the production efficiency is improved.