Additive and method for texturing of diamond wire cut polycrystalline silicon chip

A diamond wire cutting and polycrystalline silicon wafer technology is applied in the field of solar cells, which can solve the problems of restricting industrial applications, difficult to obtain ideal texture, affecting the photoelectric conversion efficiency of crystalline silicon cells, etc., so as to improve the photoelectric conversion efficiency and eliminate surface inorganic substances. material, the effect of improving the yield of texturing

Inactive Publication Date: 2018-07-27
浙江向日葵大健康科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as a new type of crystalline silicon wafer cutting technology, diamond wire cutting technology also has certain technical problems to be solved.
The surface damage of polycrystalline silicon wafers cut by diamond wire is less, and tear-shaped line marks are produced on the surface of polycrystalline silicon wafers. As a result, i

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: (1) Prepare additives, mix 15mol acetic acid, 18mol triethanolamine, 5mol sodium dodecylbenzene sulfonate, 15mol polyethylene glycol, 2mol citrate triamine, 4mol perfluoropolyether, 2mol hydrofluoric acid Add to 90mol deionized water, mix evenly to make texturing additives. (2) Prepare acid texturing liquid, dissolve hydrofluoric acid and nitric acid in deionized water to obtain acid texturing liquid, wherein the mass percentage of hydrofluoric acid is 1.5% and the mass percentage of nitric acid is 8%. Add 6L of the prepared additive to 100L of acid texturing liquid to obtain texturing agent. The diamond wire cut polycrystalline silicon wafers for solar cells are immersed in the texturing agent for texturing. During texturing, the temperature is controlled at 8°C, and the texturing time is 110s. The resulting silicon wafers are tested by scanning electron microscopy and the corrosion pit depth is 4-4.5 μm, the suede is continuous, uniform, dense, without pinh...

Embodiment 2

[0025] Example 2: (1) Prepare additives, mix 15mol acetic acid, 20mol triethanolamine, 5mol sodium dodecylbenzene sulfonate, 15mol polyethylene glycol, 2mol citrate triamine, 3mol perfluoropolyether, 8mol hydrofluoric acid Add to 100mol deionized water, mix evenly to make texturing additives. (2) Prepare acid texturing liquid, dissolve hydrofluoric acid and nitric acid in deionized water to obtain acid texturing liquid, wherein the mass percentage of hydrofluoric acid is 1.5% and the mass percentage of nitric acid is 8%. Add 10L of the prepared additive to 100L of acid texturing liquid to obtain texturing agent. The diamond wire cut polycrystalline silicon wafer for solar cell is immersed in the texturing agent for texturing. When texturing, the temperature is controlled at 10°C and the texturing time is 120s. The resulting silicon wafer has a corrosion pit depth of 4.5-4.8 by scanning electron microscopy. μm, the suede is continuous, uniform, dense, without pinholes and pitti...

Embodiment 3

[0026] Example 3: (1) Prepare additives, mix 18mol acetic acid, 15mol triethanolamine, 3mol sodium dodecylbenzene sulfonate, 18mol polyethylene glycol, 1mol citrate triamine, 4mol perfluoropolyether, 1mol hydrofluoric acid Add to 100mol deionized water, mix evenly to make texturing additives. (2) Prepare acid texturing liquid, dissolve hydrofluoric acid and nitric acid in deionized water to obtain acid texturing liquid, wherein the mass percentage of hydrofluoric acid is 1.5% and the mass percentage of nitric acid is 8%. Add 8L of the prepared additives to 100L of acid texturing liquid to obtain texturing agent. The diamond wire cut polycrystalline silicon wafer for solar cell is immersed in the texturing agent for texturing. When texturing, the temperature is controlled at 8℃, and the texturing time is 110s. The resulting silicon wafer has a corrosion pit depth of 3.5-4.0 by scanning electron microscopy. μm, the suede is continuous, uniform, dense, without pinholes and pittin...

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PUM

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Abstract

The invention relates to an additive and a method for texturing of a diamond wire cut polycrystalline silicon chip. The additive is prepared from components as follows: acetic acid, triethanolamine, sodium dodecyl benzene sulfonate, polyethylene glycol, triamine citrate, perfluoropolyether, hydrofluoric acid and water in the mole ratio being (15-25):(10-25):(1-10):(15-25):(1-10):(1-10):(1-5):(2-100). The texturing additive can better refine the inside structure of an etch pit of the silicon chip to form more and smaller micro etch pits, the surface porosity is higher, the surface etch pit holes are denser, the size of the etch pits is reduced, small hole structures are produced on the edge and at the bottom of the etch pits, and the reflectivity of the silicon chip is greatly reduced.

Description

Technical field [0001] The invention relates to the technical field of solar cells, in particular to an additive and a method for making texturing of polycrystalline silicon wafers by diamond wire cutting. Background technique [0002] Solar power generation is an important part of new energy. Silicon wafers account for the largest proportion of the cost structure of crystalline silicon solar cells. Reducing the cost of silicon wafers is essential for achieving photovoltaic parity on the grid. Based on the advantages of low silicon consumption per unit capacity, high cutting efficiency, low cost of auxiliary materials and ability to cut thin silicon wafers, diamond wire-cut monocrystalline silicon wafers have basically replaced the traditional mortar cutting process, greatly enhancing the cost competition of monocrystalline silicon wafers In 2016, the market share of monocrystalline silicon solar cells rebounded to more than 25%. In this context, the polysilicon industry is also...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/0236
CPCC30B29/06C30B33/10H01L31/02366Y02E10/50
Inventor 黄燕
Owner 浙江向日葵大健康科技股份有限公司
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