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Preparation of silver-doped nickel oxide film and application of nickel oxide film in perovskite solar cell as hole transport layer

A technology of hole transport layer and nickel oxide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting the use of perovskite thin-film solar cells, restricting commercial applications, and affecting device performance, etc., to achieve high photoelectricity Effects of conversion efficiency and environmental stability, good light transmittance and hole transport ability, and high surface coverage

Active Publication Date: 2017-07-21
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, perovskite thin-film solar cells still face an important problem: the poor stability of organic lead-halide perovskite materials, especially in humid environments and poor thermal stability[ J. Mater. Chem. A., 2015, 3, 19123-19128, Chem. Mater., 2015, 27, 4229–4236, J. Phys. Chem. C, 2015, 119, 14919-14928], which directly affects the use of perovskite thin film solar cells, thus limiting its commercial application
However, due to the poor conductivity of nickel oxide itself, the device fill factor and short-circuit current are low, which affects device performance

Method used

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  • Preparation of silver-doped nickel oxide film and application of nickel oxide film in perovskite solar cell as hole transport layer
  • Preparation of silver-doped nickel oxide film and application of nickel oxide film in perovskite solar cell as hole transport layer
  • Preparation of silver-doped nickel oxide film and application of nickel oxide film in perovskite solar cell as hole transport layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: Preparation of silver-doped nickel oxide film (doped atomic ratio is Ag:Ni = 2:98) and its reaction in CH 3 NH 3 PB 3 Applications in Inverse Planar Perovskite Solar Cells.

[0024] Step 1: Clean the surface of the ITO glass, and clean the surface with ultraviolet ozone for 10 minutes.

[0025] Step 2: Preparation of the hole transport layer: Nickel nitrate hexahydrate (Ni (NO 3 ) 2 .6H 2 O) and silver nitrate (AgNO 3 ) according to the molar ratio of 0.98:0.02, the total molar concentration is 1M, dissolved in ethylene glycol solution containing diethylamine, stirred at room temperature for 12 h, and prepared into Ag:NiO x precursor solution. The Ag:NiO x The precursor solution was spin-coated on ITO glass, and then 300 o C heating for 60min.

[0026] Step 3: Preparation of perovskite film precursor solution: PbI 2 and CH 3 NH 3 I was dissolved in N,N-dimethylformamide (DMF) solution containing dimethyl sulfoxide (DMSO) at a molar ratio of 1:1 a...

Embodiment 2

[0030] Example 2: Reverse planar CH with poly(3,4-dioxanethiophene) / (poly(styrene sulfonate) (PEDOT:PSS) as hole transport layer 3 NH 3 PB 3 Fabrication of perovskite solar cells.

[0031] Except for step 2, all steps and methods are exactly the same as in the foregoing embodiment 1.

[0032] Step 2: Preparation of PEDOT:PSS hole transport layer: Spin-coat commercial PEDOT:PSS on ITO glass at a speed of 4000rpm, then in air at 140 o C and heat for 10 minutes.

Embodiment 3

[0033] Example 3: Reverse planar CH with pure nickel oxide as hole transport layer 3 NH 3 PB 3 Fabrication of perovskite solar cells.

[0034] Except for step 2, all steps and methods are exactly the same as in the foregoing embodiment 1.

[0035] Step 2: Preparation of pure nickel oxide hole transport layer: Nickel nitrate hexahydrate (Ni (NO 3 ) 2 .6H 2 O) dissolved in ethylene glycol solution containing diethylamine, the molar concentration was 1M, stirred at room temperature for 12 h, and prepared into Ag:NiO x precursor solution. The Ag:NiO x The precursor solution was spin-coated on ITO glass, and then 300 o C heating for 60min.

[0036] Implementation effect: Finally, conduct a battery performance test to compare the photoelectric conversion performance of the battery. Store the battery in a glass container with a humidity of 30 ± 2%, measure its efficiency at regular intervals, and compare the stability of the battery.

[0037] In embodiment 1 with Ag:NiO x ...

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Abstract

The invention provides preparation of a silver-doped nickel oxide film and an application of the nickel oxide film in a perovskite solar cell as a hole transport layer. The preparation of the silver-doped nickel oxide film includes: dissolving nickel nitrate hexahydrate and silver nitrate in a diethylamine-containing glycol solution, stirring the mixture at a room temperature for 12-16 h, preparing a mixed precursor solution of nickel nitrate and silver nitrate with the metallic ion total concentration of 0.5-1.5 M, wherein the ratio of Ag to Ni is 1-2:100; and performing spin coating of the mixed precursor solution of nickel nitrate and silver nitrate on a substrate with the rotating speed of 2500-3500 rmp, and then performing heating at the temperature of 300 DEG C for 60-80 min. According to the silver-doped nickel oxide film, the light transmission and the hole transport capability are better, the degree of crystallization and the surface coverage rate of the perovskite film grown on the silver-doped nickel oxide film are higher compared with the pure nickel oxide film, and the reverse planar perovskite solar cell prepared by the nickel oxide film as the hole transport layer is advantaged by higher photoelectric conversion efficiency and environmental stability.

Description

technical field [0001] The invention belongs to the technical field of new material solar cells, and relates to the preparation of a hole transport layer and its application in perovskite solar cells. Background technique [0002] Since organic lead halide perovskite materials were first used in photovoltaic devices in 2009 [ J. Am. Chem. Soc. , 2009, 131, 6050–6051], due to its high light absorption coefficient, long exciton lifetime, low binding energy, and excellent carrier transport properties, in just a few years, perovskite solar cells have Research has advanced by leaps and bounds, and its photoelectric conversion efficiency jumped from an initial 3.8% to 22.1% [http: / / www.nrel.gov / ncpv / images / efficiency_chart.jpg]. The impressive photoelectric conversion efficiency and simple preparation process make perovskite solar cells the most competitive cell type in the field of thin-film photovoltaic technology today. However, perovskite thin-film solar cells still face a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/46
CPCH10K30/10H10K2102/00Y02E10/549
Inventor 李璠姚凯魏荧王晓峰
Owner NANCHANG UNIV
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