Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of perovskite solar cell based on nickel oxide hole transport layer

A hole transport layer and solar cell technology, applied in the field of perovskite solar cell preparation, can solve problems such as porous holes, uneven thickness of nickel oxide film, etc., achieve large grain size, good conductivity, and increase open circuit The effect of voltage

Inactive Publication Date: 2019-06-04
SHANGHAI JIAO TONG UNIV
View PDF2 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to solve the problems of uneven thickness and holes in the nickel oxide film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of perovskite solar cell based on nickel oxide hole transport layer
  • Preparation method of perovskite solar cell based on nickel oxide hole transport layer
  • Preparation method of perovskite solar cell based on nickel oxide hole transport layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The following describes a preferred embodiment of the present invention with reference to the accompanying drawings, so that its technical content is clearer and easier to understand. The present invention can be embodied in many different forms of embodiments, and the protection scope of the present invention is not limited to the embodiments mentioned herein.

[0039] in the attached figure 1 In , components with the same structure are denoted by the same numerals, and components with similar structures or functions are denoted by similar numerals. The size and thickness of each component shown in the drawings are shown arbitrarily, and the present invention does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of parts is appropriately exaggerated in some places in the drawings.

[0040] Step 1. Conductive glass substrate pretreatment: ultrasonically clean the etched ITO or FTO conductive glass substrate 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a perovskite solar cell based on a nickel oxide hole transport layer. The core innovation of the preparation method is to add an ultraviolet ozone surface treatment technology in the preparation step of a hole transport layer. The problem that the thickness is not uniform and holes can be generated easily for a nickel oxide hole transport layer prepared by spin coating is solved, and the perovskite film in the device is prevented from directly contacting a transparent electrode to affect the performance of the device. Compared with the method ofmodifying a nickel oxide film by doping nanoparticles, a perovskite solar cell prepared by the method of the invention is more stable, and the difference between the devices prepared by the method issmaller.

Description

technical field [0001] The invention relates to the field of preparation of crystalline silicon solar cells, in particular to a preparation method of a perovskite solar cell based on a nickel oxide hole transport layer. Background technique [0002] The development of solar energy technology has roughly gone through three stages: the first generation of solar cells mainly refers to monocrystalline silicon and polycrystalline silicon solar cells, and their photoelectric conversion efficiencies in the laboratory have reached 25% and 20.4% respectively; the second generation of solar cells mainly includes non- Crystalline silicon thin film battery and polycrystalline silicon thin film battery. The third generation of solar cells mainly refers to some new concept cells with high conversion efficiency. Perovskite-type solar cells are solar cells that use perovskite-type organic metal halide semiconductors as light-absorbing materials, and belong to the third generation of solar ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCY02E10/549
Inventor 沈文忠王暾丁东刘洪
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com