Preparation method for perovskite thin film capable of improving purity and reducing pin holes

A technology of perovskite and thin film, which is applied in the field of solar cells, can solve the problems of pinhole formation of perovskite thin film, affect photovoltaic performance, reduce film quality, etc., achieve low hysteresis effect, simple and controllable preparation process, repeatability Good results

Active Publication Date: 2016-08-17
HEBEI UNIVERSITY
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  • Application Information

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Problems solved by technology

But with the powder contact method, due to the CH 3 NH 3 I powder particles are larger, making CH 3 NH 3 I particles and PbI 2 The thin film contact cannot form a good contact, a

Method used

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  • Preparation method for perovskite thin film capable of improving purity and reducing pin holes
  • Preparation method for perovskite thin film capable of improving purity and reducing pin holes
  • Preparation method for perovskite thin film capable of improving purity and reducing pin holes

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Embodiment 1

[0031] Embodiment 1, the preparation method of perovskite solar cell.

[0032] The first step: conductive glass cleaning.

[0033] Cut the conductive glass (the conductive glass in this embodiment is FTO, and the conductive glass in other embodiments can also be ITO, etc.) to a specified size; use an ultrasonic cleaner to clean the cut conductive glass in deionized water, acetone, and ethanol in sequence. Ultrasonic cleaning for 10 min, followed by N 2 Blow dry and put into oxygen plasma for 3min.

[0034] The second step: TiO 2 Preparation of dense layers.

[0035] (1) Configure dense layer precursor:

[0036] ①. Measure 2.5mL of absolute ethanol, and measure 35μL of 2mol / L HCl, add the measured HCl into absolute ethanol, and stir well;

[0037] ②. Measure 2.5mL of absolute ethanol, and measure 350μL of isopropyl titanate, add the measured isopropyl titanate into absolute ethanol, and stir evenly;

[0038] ③. Use a pipette to absorb the solution in step ②, and add it dr...

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Abstract

The invention provides a preparation method for a perovskite thin film capable of improving purity and reducing pin holes. The preparation method specifically comprises the steps of dissolving CH<3>NH<3>X (x can be Cl, Br or I) powder into anhydrous isopropyl alcohol to form a CH<3>NH<3>X solution, and then spraying the solution on a substrate by a spray pyrolysis method to form a CH<3>NH<3>X film layer; then covering the CH<3>NH<3>X thin film with the substrate coated with a PbX<2> thin film; and carrying out high-temperature annealing to enable the CH<3>NH<3>X steam molecules to be dispersed in the PbX<2> thin film, wherein the PbX<2> existing in mesopores also can be fully reacted. According to the preparation method, the CH<3>NH<3>X is in contact reaction with the PbX<2> thin film in a form of thin film; and compared with the powder type contact, the point contact can be replaced by surface contact, so that the problem of the pin holes caused by uneven contact existing in the current powder contact method can be effectively solved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a perovskite thin film with improved purity and reduced pinholes. Background technique [0002] Solar cells can directly convert solar energy into electrical energy. Since solar energy is an inexhaustible clean energy source, solar cells are an important countermeasure for human beings to cope with the energy crisis and seek sustainable development. Currently, crystalline silicon solar cells account for 89% of the photovoltaic market share. However, expensive raw materials and cumbersome cell processes limit the long-term development of crystalline silicon solar cells. In the past decade, thin-film solar cells include silicon-based thin-film, Cu(In,Ga)Se 2-x S x And CdTe batteries have also begun to achieve large-scale industrialization. As an outstanding representative of the third generation of solar cells, perovskite solar cells are a new type of...

Claims

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Application Information

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IPC IPC(8): H01L51/48
CPCH10K71/12Y02E10/549
Inventor 麦耀华范建东刘冲李红亮张翠苓
Owner HEBEI UNIVERSITY
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