Preparation method of large-area non-layered structure NiSe nano thin film

A non-layered structure, nano-thin film technology, applied in the direction of coating, final product manufacturing, metal material coating process, etc., can solve the problem of high cost and achieve the effect of good quality, large grain size and low cost

Inactive Publication Date: 2016-11-16
HEFEI UNIV OF TECH
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Problems solved by technology

Nanofilms of large-area non-layered materials can be epitaxially grown on

Method used

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Embodiment Construction

[0013] A method for preparing a large-area non-layered structure NiSe nano film, comprising the following steps:

[0014] (1) Preparation of NiSe nano-film: Ni foil with a thickness of 50 μm and a purity of 99.99% was selected to have 10 sccm H 2 and 20 sccm Ar in a low-pressure atmosphere, annealing at 500 °C for 30 min to remove the oxide on the surface of the Ni foil; after annealing, use electron beam evaporation to deposit a ZnSe film on the surface of the Ni foil. in 2×10 -4 Pa; followed by ZnSe / Ni foil at 2×10 -4 Annealing at 700 °C for 30 min at a vacuum of Pa to obtain a NiSe nanofilm;

[0015] (2) Transfer of NiSe nano film: Spin coating concentration of 100 mg / ml PMMA on the NiSe nano film obtained on the surface of Ni foil with a thickness of 50 μm. Glue for 6 s, and then spread the glue at 2000 r / min for 40 s; after spin coating, put it on a heating table and bake it at 80 ℃ for 5 min; then put the PMMA / NiSe / Ni foil into 2.0 mol / L FeCl 3 The Ni foil is etched...

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Abstract

The invention discloses a preparation method of a large-area non-layered structure NiSe nano thin film. The method comprises the steps of preparing the NiSe nano thin film; transferring the NiSe nano thin film; and constructing an NiSe nano thin film photodetector. The non-layered structure NiSe nano thin film obtained by growth through a solid-phase reaction method is good in quality; the grain sizes are large; and the number of grain boundaries is small. On the basis of the photodetector prepared from the high-quality NiSe nano thin film, the obtained photocurrent is improved by four orders of magnitude in comparison with that of the NiSe nano-crystalline thin film. The preparation technology is simple; the cost is low; the method has relatively good practical value; and the method can be used for preparing other non-layered structure material nano thin films compatible with a traditional planar process.

Description

technical field [0001] The invention belongs to the field of semiconductor film materials, and relates to a method for preparing a large-area non-layer structure NiSe nano film by a solid phase reaction method. Background technique [0002] Graphene and other 2D materials, including hexagonal boron nitride and transition metal sulfides, have attracted extensive attention due to their unique structures and properties. In particular, high-quality, large-area two-dimensional films can be prepared on specific substrates by methods such as chemical vapor deposition, which significantly accelerates the application and development of two-dimensional materials. Inspired by layered two-dimensional materials, it can be predicted that nanofilms of non-layered materials are compatible with traditional planar processes, and are more conducive to their applications than other dimensions. Moreover, compared with films composed of nanocrystals, the prepared non-layered nanofilms with large...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032C23C14/30C23C14/06
CPCC23C14/0623C23C14/30H01L31/032H01L31/1896Y02P70/50
Inventor 王敏蔡曹元马杨黄帆贾飞翔许智豪吴从军
Owner HEFEI UNIV OF TECH
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