Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof

A three-dimensional hybrid perovskite technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of cumbersome and difficult-to-control stacked perovskite preparation methods, and achieve good photoelectric conversion efficiency and stability properties, low contact resistance, grain size and compactness

Pending Publication Date: 2021-10-26
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for reducing the dimensionality of perovskite in a gas atmosphere, whic

Method used

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  • Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof
  • Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof
  • Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0036] Example 1

[0037] Refer figure 1 , 2 As shown, including the following steps:

[0038] (1) PBI 2 CH 3 NH 3 I Add to aniline solvent according to the molar ratio 1: 1 (PBI 2 The concentration was 1 m), stirred at 70 ° C for 12 h to obtain a solution A. The solution A was heated to 100 ° C, the heating time was about 2 to 3 h, and the solution was precipitated in black small grains. The excess solution was then sucked out, and the black crystal granules and diethylamine were placed in the same sealed space, and the reaction was allowed to react to 6 to 12 h, and the black small grains were liquefied into a yellow liquid intermediate.

[0039] (2) PBI 2 CH 3 NH 3 I Add to DMF solvent according to the molar ratio 1: 1 (PBI 2 The concentration was 1 m), the solution was stirred at 70 ° C for 12 h to obtain a solution B; the yellow liquid intermediate obtained in step (1) was added to different addition ratios (5% by 5%, 10%, 20%) of the liquid intermediate volume ratio of 5%, 1...

Example Embodiment

[0041] Example 2

[0042] Refer image 3 As shown, a PCBM film is deposited on a perovskite film obtained in Example 1. Last 10 -4 The vacuum of PA is hot and evaporated in 100 nm silver electrodes.

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Abstract

The invention belongs to the field of semiconductor organic metal halide perovskite and perovskite photovoltaic solar cell devices, and provides a two-dimensional-three-dimensional mixed perovskite thin film and preparation and application of the two-dimensional-three-dimensional mixed perovskite thin film. The method comprises the following steps: perovskite crystal grains is rapidly prepared by using aniline as a solvent, perovskite micron crystal grains are placed in a diethylamine atmosphere to obtain a liquid intermediate, the liquid intermediate is used as a perovskite precursor solution additive to prepare a compact and uniform two-dimensional-three-dimensional mixed perovskite film, and the two-dimensional-three-dimensional mixed perovskite film is applied to a photovoltaic device. According to the technical scheme, the compact and uniform two-dimensional-three-dimensional mixed perovskite thin film prepared through the novel method can be obtained, and good performance can be obtained when the thin film is used for a photoelectric device.

Description

technical field [0001] The present invention relates to the technical field of selection of solvent, preparation and application of liquid intermediate, two-dimensional-three-dimensional hybrid perovskite film formation and perovskite optoelectronic devices, in particular to semiconductor organometallic halide perovskite and perovskite photovoltaic The field of solar cell devices. Background technique [0002] Lead iodide methylamine (CH 3 NH 3 PB 3 ) As the earliest perovskite studied, it has become the most frequently used perovskite active layer material in device preparation due to its high extinction coefficient, carrier mobility and long transmission distance. [0003] but unmodified CH 3 NH 3 PB 3 The film coverage is low, and there are defects and pinhole structures, which will reduce the film's ability to absorb light and resist water and oxygen erosion. [0004] Two-dimensional perovskite has excellent moisture resistance and stability compared with three-di...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K71/40H10K85/30H10K30/10Y02E10/549
Inventor 邓先宇郭思佳刘博琛王洋洋
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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