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Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof

A three-dimensional hybrid perovskite technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of cumbersome and difficult-to-control stacked perovskite preparation methods, and achieve good photoelectric conversion efficiency and stability properties, low contact resistance, grain size and compactness

Pending Publication Date: 2021-10-26
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention provides a method for reducing the dimensionality of perovskite in a gas atmosphere, which can solve the problems of cumbersome and difficult control of the preparation method of laminated perovskite

Method used

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  • Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof
  • Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof
  • Two-dimensional-three-dimensional mixed perovskite thin film and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] refer to figure 1 , 2 shown, including the following steps:

[0038] (1) PbI 2 and CH 3 NH 3 I joins in the aniline solvent according to molar ratio 1:1 (PbI 2 The concentration is 1M), stirred at 70°C for 12h to obtain solution A. Heat solution A to 100°C for about 2 to 3 hours, and small black crystals will precipitate out of the solution. Then suck out the excess solution, put the small black crystal grains and diethylamine in the same closed space, and let it stand for 6-12 hours to react, and the small black crystal grains will liquefy into a yellow liquid intermediate.

[0039] (2) PbI 2 and CH 3 NH 3 I joins in the DMF solvent according to molar ratio 1:1 (PbI 2 concentration is 1M), the solution was stirred at 70°C for 12h to obtain solution B; the yellow liquid intermediate obtained in step (1) was doped and added in different proportions (the volume ratio of the liquid intermediate was 5%, 10%, 20% , 30%, 60%) into solution B, and continued to stir ...

Embodiment 2

[0042] refer to image 3 As shown, the PCBM film was deposited on the perovskite film obtained in Example 1 with a spin-coating process of 1500 rpm and 30 s. last at 10 -4 A 100nm silver electrode was thermally evaporated at a vacuum degree of Pa.

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Abstract

The invention belongs to the field of semiconductor organic metal halide perovskite and perovskite photovoltaic solar cell devices, and provides a two-dimensional-three-dimensional mixed perovskite thin film and preparation and application of the two-dimensional-three-dimensional mixed perovskite thin film. The method comprises the following steps: perovskite crystal grains is rapidly prepared by using aniline as a solvent, perovskite micron crystal grains are placed in a diethylamine atmosphere to obtain a liquid intermediate, the liquid intermediate is used as a perovskite precursor solution additive to prepare a compact and uniform two-dimensional-three-dimensional mixed perovskite film, and the two-dimensional-three-dimensional mixed perovskite film is applied to a photovoltaic device. According to the technical scheme, the compact and uniform two-dimensional-three-dimensional mixed perovskite thin film prepared through the novel method can be obtained, and good performance can be obtained when the thin film is used for a photoelectric device.

Description

technical field [0001] The present invention relates to the technical field of selection of solvent, preparation and application of liquid intermediate, two-dimensional-three-dimensional hybrid perovskite film formation and perovskite optoelectronic devices, in particular to semiconductor organometallic halide perovskite and perovskite photovoltaic The field of solar cell devices. Background technique [0002] Lead iodide methylamine (CH 3 NH 3 PB 3 ) As the earliest perovskite studied, it has become the most frequently used perovskite active layer material in device preparation due to its high extinction coefficient, carrier mobility and long transmission distance. [0003] but unmodified CH 3 NH 3 PB 3 The film coverage is low, and there are defects and pinhole structures, which will reduce the film's ability to absorb light and resist water and oxygen erosion. [0004] Two-dimensional perovskite has excellent moisture resistance and stability compared with three-di...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K71/40H10K85/30H10K30/10Y02E10/549
Inventor 邓先宇郭思佳刘博琛王洋洋
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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