Graphene temperature sensor and preparing process thereof

A technology of temperature sensor and preparation process, which is applied in thermometers, thermometers and instruments using electrical/magnetic components directly sensitive to heat, etc., can solve the problems of not utilizing the properties of two-dimensional graphene and the like

Inactive Publication Date: 2014-03-12
XIDIAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

However, in the above applications, the one-dimensional graphene interface is mainly used, and the properties of two-dimensional graphene are not utilized.

Method used

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  • Graphene temperature sensor and preparing process thereof
  • Graphene temperature sensor and preparing process thereof
  • Graphene temperature sensor and preparing process thereof

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Experimental program
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Embodiment

[0021] Embodiment: making graphene temperature sensor

[0022] When making the graphene temperature sensor, the present invention takes the following technical solutions:

[0023] 1. Preparation of SiO 2 / Si substrate: 300nm SiO is grown on Si substrate by dry oxidation process 2 film.

[0024] 2. Preparation of double-layer graphene: The method of mechanically exfoliating natural graphite is used to obtain double-layer graphene.

[0025] 3. Deposit double-layer graphene: deposit double-layer graphene on SiO 2 layer.

[0026] 4. Making source-drain electrodes: Make electrodes at the source-drain regions at both ends of the double-layer graphene. The method is to first make through holes by electron beam lithography, and then thermally evaporate 5nmCr and 100nmAu as electrodes.

[0027] 5. Deposition of silsesquioxane (HSQ): In order to protect graphene from being damaged in the SiO2 preparation process, a layer of 50nm thick silsesquioxane (HSQ) is first spin-coated, and ...

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Abstract

The invention discloses a graphene temperature sensor and a preparing process thereof. The structure of the graphene temperature sensor comprises a top gate electrode, a Ni-Cr alloy film, an upper SiO2 layer, hydrogen silsesquioxane, a dual-layer graphene and source and drain electrode, a lower SiO2 layer, a Si substrate and a back gate electrode from top to bottom. The method comprises the steps of depositing the dual-layer graphene obtained by mechanical stripping at the Si substrate with a SiO2 layer of 300nm thick, manufacturing electrodes at a source end and a drain end by an electronic beam photoetching technology, and thermally evaporating 5nmCr/100nmAu. Compared with the existing sensor, the graphene temperature sensor has the advantages of very high sensitivity, lower intrinsic noise and very high detection speed and has well application prospect in the aviation field.

Description

Technical field: [0001] The invention belongs to the field of semiconductor devices and semiconductor technology, and relates to a temperature sensor device and a preparation process thereof, in particular to a double-gate double-layer graphene thermal electron temperature sensor device and a preparation process thereof. Background technique: [0002] A temperature sensor is a sensor that senses temperature and converts it into a usable output signal. The temperature sensor is the earliest developed and most widely used type of sensor. According to the measurement method, it can be divided into two categories: contact type and non-contact type. According to the characteristics of sensor materials and electronic components, it can be divided into two types: thermal resistance and thermocouple. With the support of semiconductor technology, people have successively developed semiconductor thermocouple sensors, PN junction temperature sensors and integrated temperature sensors....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/00
Inventor 张鹏马中发吴勇庄奕琪赵钰迪冯元博陈祎坤
Owner XIDIAN UNIV
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