Nitrogen dioxide sensor based on orderly-channel Ni-doped mesoporous indium oxide and preparation method thereof

A technology of nitrogen dioxide and indium oxide, which is applied in the field of nitrogen dioxide gas sensor and its preparation, can solve the problems of complex equipment and low detection limit, achieve the effect of small volume, simple device process, and suitable for mass production

Inactive Publication Date: 2016-03-23
JILIN UNIV
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above methods have the characteristics of low detection limit and high sensitivity, but because they often require complex and expensive equipment, they are not suitable for real-time and continuous detection of ambient gases, so people hope to use gas sensors to detect NO 2 to test

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitrogen dioxide sensor based on orderly-channel Ni-doped mesoporous indium oxide and preparation method thereof
  • Nitrogen dioxide sensor based on orderly-channel Ni-doped mesoporous indium oxide and preparation method thereof
  • Nitrogen dioxide sensor based on orderly-channel Ni-doped mesoporous indium oxide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Preparation of Ni-doped mesoporous indium oxide with ordered channels

[0038] ⑴ Add 1.72g of In(NO 3 ) 3 4.5H 2 O and 0.0172g of Ni(NO 3 ) 2 6H 2 O was added to 10 mL of absolute ethanol and kept stirring until it was completely dissolved;

[0039] (2) Add 0.5g of SBA-15 to the solution in step (1) and transfer to a water bath with a temperature of 40°C for water bath treatment until the solvent in the solution evaporates completely; dry the obtained solid powder at 60°C and After sintering at 300°C for 3 hours in a muffle furnace, the mass of the sintered product is about 1.3g;

[0040] (3) Add 0.86g of In(NO 3 ) 3 4.5H 2 O and 0.0086g of Ni(NO 3 ) 2 6H 2 O was added to 10 mL of absolute ethanol and kept stirring until it was completely dissolved;

[0041] (4) Add all the sintered products obtained in step (2) to the solution of step (3) as a template (about 1.3g), and transfer to a water bath with a temperature of 40°C for water bath treatment until t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a nitrogen dioxide sensor based on orderly-channel Ni-doped mesoporous indium oxide and a preparation method thereof and belongs to the technical field of semiconductor oxide gas sensors. The nitrogen dioxide sensor is composed of a Al2O3 insulating ceramic tube 2, a Ni-Cr alloy heating coil 1 and sensitive material films 4, wherein the outer surface of the Al2O3 insulating ceramic tube 2 is provided with two discrete annular gold electrodes 3, the Ni-Cr alloy heating coil 1 penetrates through the Al2O3 insulating ceramic tube 2, and the outer surface of the Al2O3 insulating ceramic tube 2 and the annular gold electrodes 3 are coated with the sensitive material films 4. Each annular gold electrode 3 is connected with a pair of platinum wires 5. The sensitive material films 4 are obtained by being coated by orderly-channel Ni-doped mesoporous indium oxide. An orderly-channel Ni-doped mesoporous indium oxide material can provide a large specific surface area, and more active sites are provided easily. More oxygen vacancy defects are introduced to Ni-doped indium oxide, sensitivity is improved easily, and the nitrogen dioxide sensor has wide application prospects in the aspect of detection of the nitrogen dioxide content in the microenvironment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, and in particular relates to a nitrogen dioxide gas sensor based on Ni-doped mesoporous indium oxide with ordered pores and a preparation method thereof. Background technique [0002] NO 2 It is a gas with a pungent smell, which is seriously harmful and a double killer of the natural environment and human health. NO in the air 2 Combines with water vapor to form small droplets of nitric acid, which fall to the ground as rain to form acid rain. Acid rain is very harmful. It will change the pH value of the soil, hinder the growth of crops, cause agricultural production to decrease or even fail; it will destroy forest vegetation and cause tree death; it will corrode buildings and industrial equipment and shorten its service life; it will pollute water sources and cause water pollution. The pH drops, causing significant harm to fisheries and threatening the safety of drinki...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 卢革宇高原杨秋月
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap