Method for preparing monocrystal double-layer graphene

A double-layer graphene, single crystal technology, applied in the field of graphene, can solve the problems of unstable electronic properties of graphene, defects at the grain boundary of polycrystalline thin film graphene transport properties, etc., and achieves less defects, large size, and operation. handy effect

Inactive Publication Date: 2016-04-13
XINYANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high density of grain boundaries in these polycrystalline graphene films leads to instability in the electronic properties of graphene
Although relevant studies say that polycrystalline graphene prepared by this chemical vapor deposition method has a high mobility comparable to that of exfoliated graphene, the overall transport properties of polycrystalline thin film graphene are still affected by defects at grain boundaries.

Method used

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  • Method for preparing monocrystal double-layer graphene
  • Method for preparing monocrystal double-layer graphene
  • Method for preparing monocrystal double-layer graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0034] like figure 1 As shown, the carbon source is methane, of course it can also be acetylene, the copper catalyst is single crystal copper foil, the reactor is a quartz tube, the No. 1 tube is an argon tube, the No. 2 tube is a hydrogen tube, and the No. 3 tube is a methane gas tube.

[0035] A method for preparing single-crystal double-layer graphene, comprising the following steps:

[0036] a) Place the single crystal copper foil in the middle of a clean quartz tube, evacuate the quartz tube, then pass in argon gas, evacuate, pass in hydrogen gas, evacuate again, and repeat three times to remove the Air, then pass 500-1000sccm argon-hydrogen mixed gas into the quartz tube;

[0037] b) heating the single crystal copper foil so that the temperature in the central area of ​​the quartz tube reaches 1000°C, and then keeping the temperature constant for 60 minutes, annealing the surface of the single crystal copper foil;

[0038] c) Continue to keep the temperature at 1000°C ...

Embodiment 2

[0042] like figure 1 As shown, the carbon source is methane, of course it can also be acetylene, the copper catalyst is single crystal copper foil, the reactor is a quartz tube, the No. 1 tube is an argon tube, the No. 2 tube is a hydrogen tube, and the No. 3 tube is a methane gas tube.

[0043] A method for preparing single-crystal double-layer graphene, comprising the following steps:

[0044] a) Place the single crystal copper foil in the middle of a clean quartz tube, evacuate the quartz tube, then pass in argon gas, evacuate, pass in hydrogen gas, evacuate again, and repeat three times to remove the Air, then pass 500-1000sccm argon-hydrogen mixed gas into the quartz tube;

[0045] b) heating the single crystal copper foil so that the temperature in the central area of ​​the quartz tube reaches 1000°C, and then keeping the temperature constant for 90 minutes, annealing the surface of the single crystal copper foil;

[0046] c) Slowly cool down the central area of ​​the ...

Embodiment 3

[0050] like figure 1 As shown, the carbon source is methane, the copper catalyst is polycrystalline copper foil, the reactor is a quartz tube, the No. 1 tube is an argon tube, the No. 2 tube is a hydrogen tube, and the No. 3 tube is a methane gas tube.

[0051] A method for preparing single-crystal double-layer graphene, comprising the following steps:

[0052] a) The polycrystalline copper foil is ultrasonically cleaned with deionized water, ethanol, acetone, and isopropanol in sequence, then blown dry with nitrogen, and then placed in the middle of the quartz tube of the chemical vapor deposition system, vacuumizes the quartz tube, and blows it to the quartz tube. Introduce argon and hydrogen into the tube to fill the reactor with argon-hydrogen mixed gas, repeat vacuuming three times to completely remove the air in the tube, and then inject argon-hydrogen mixed gas into the quartz tube again;

[0053] b) Heating the polycrystalline copper foil so that the temperature in the ...

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Abstract

The invention discloses a method for preparing monocrystal double-layer graphene. The method comprises the following steps that 1, a copper catalyst is put into a reactor, non-oxidative gas is introduced into the reactor to enable the reactor to be full of the non-oxidative gas, and monocrystal copper or polycrystalline copper or a copper film is adopted as the copper catalyst; 2, the copper catalyst is heated to the target temperature, and then the temperature is kept constant for 30-120 minutes, wherein the target temperature ranges from 1000 DEG C to 1070 DEG C; 3, the copper catalyst is cooled to enable the temperature to reach 900 DEG C-500 DEG C or be kept constant, in the cooling or constant temperature process, the non-oxidative gas carrying a carbon source is introduced into the reactor, and then the monocrystal double-layer graphene can be obtained on the surface of the copper catalyst. Accordingly, the large-size monocrystal double-layer graphene is prepared on the copper catalyst through an isothermal or non-isothermal atmospheric pressure chemical vapor deposition method, and the method is convenient to operate, simple and practicable and can be applied to high-grade electronic devices and integrated circuits.

Description

technical field [0001] The invention relates to a method for preparing single-crystal double-layer graphene, which belongs to the technical field of graphene. Background technique [0002] At present, graphene is an ultra-thin single-atom two-dimensional material. Its unique physical structure endows it with excellent electrical, optical, and mechanical properties, making it sought after by researchers in various fields. Initially, graphene was prepared by micromechanical exfoliation of highly oriented pyrolytic graphite, and obtained up to 200,000V -1 S -1 High-quality graphene with high mobility. At present, the chemical vapor phase method is used to prepare graphene on the surface of transition metal substrate Ni or Cu, and square meter-scale single-layer, double-layer or multi-layer graphene can already be obtained. [0003] The unique zero-bandgap dispersion relationship of single-layer graphene limits its application in logic switches and memories. In order to open...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B25/00
CPCC30B29/02C30B25/00
Inventor 孙海斌刘江峰马玉娟罗永松许军旗娄志恒
Owner XINYANG NORMAL UNIVERSITY
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