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Si-substrate patterned graphene preparation method based on Ni film annealing

A patterned graphene and substrate technology, applied in the field of microelectronics, can solve the problems of complex graphics, inaccessibility, and high cost of template preparation, and achieve the effect of smooth surface, low porosity, and guaranteed device performance

Inactive Publication Date: 2013-02-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is convenient and simple to imprint graphene where graphics are required, but it is impossible to obtain more complex graphics, and the cost of template preparation is also high

Method used

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  • Si-substrate patterned graphene preparation method based on Ni film annealing
  • Si-substrate patterned graphene preparation method based on Ni film annealing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Step 1: Remove sample surface contamination.

[0035] (1.1) Clean the surface of the 4-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0036] (1.2) Then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0037] Step 2: Vacuumize the reaction chamber.

[0038] Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level.

[0039] Step 3: growing the carbonized layer.

[0040] in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1000 ° C, and then the flow rate of 35ml / min is introduced into the reaction chamber. 3 h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 8min.

[0041] Step 4: growing a 3C-S...

Embodiment 2

[0066] Step 1: Remove sample surface pollutants.

[0067] Clean the surface of the 8-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0068] Step 2: Vacuumize the reaction chamber.

[0069] Same as Step 2 of Example 1.

[0070] Step 3: growing a carbonized layer.

[0071] in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1100 ° C, and then the flow rate of 35 ml / min is introduced into the reaction chamber. 3 h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 6min.

[0072] Step 4: growing a 3C-SiC thin film on the carbide layer.

[0073] Rapidly raise the temperature of the reaction chamber to the growth temper...

Embodiment 3

[0091] Step A: Clean the surface of the 12-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0092] Step B: Same as Step 2 of Example 1.

[0093] Step C: In H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1200°C, and then the flow rate of 35ml / min is introduced into the reaction chamber 3 h 8 , for 4 min to grow a carbonized layer on the Si substrate.

[0094] Step D: Rapidly raise the temperature of the reaction chamber to the growth temperature of 1350°C, and feed the SiH with flow rates of 35ml / min and 70ml / min respectively. 4 and C 3 h 8 , for 3C-SiC thin film heteroepitaxial growth for 60min; then in H 2 Gradually cool down to room temperature u...

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Abstract

The invention discloses an Si-substrate patterned graphene preparation method based on Ni film annealing, which solves the problme that the graphene has to be subjected to shape cutting by electron beam etching before being made into components. The preparation method comprises the following steps: (1) growing a carbonization layer on an Si substrate as transition, and growing a 3C-SiC film at 1200-1350 DEG C; (2) depositing a SiO2 layer on the surface of the 3C-SiC film, and etching a pattern on the SiO2; (3) reacting the bare 3C-SiC with gas-state CCl4 at 800-1000 DEG C to generate a carbon film; (4) putting the generated carbon film sample wafer in a buffer hydrofluoric acid solution to remove residual SiO2; and (5) depositing a 300-500nm-thick Ni film on the carbon film by using an electron beam, putting the sample wafer with the deposited Ni film in Ar gas, and annealing at 900-1100 DEG C for 15-25 minutes to generate the patterned graphene in the pattern position. The patterned graphene prepared by the method disclosed by the invention has the advantages of stable electron mobility and favorable continuity, and can be directly used for making basic components without etching.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor film material and a preparation method thereof, in particular to a method for preparing Si substrate patterned graphene based on Ni film annealing. technical background [0002] Graphene appeared in the laboratory in 2004. At that time, two scientists, Andre Gem and Kostya Novoselov, from the University of Manchester in the United Kingdom discovered that they could obtain more and more graphene in a very simple way. thinner and thinner graphite flakes. They peeled off the graphite flakes from the graphite, then glued the two sides of the flakes to a special adhesive tape, and when the tape was torn off, the graphite flakes could be split in two. Repeatedly doing this, the flakes got thinner and thinner, and eventually, they got a flake made of just one layer of carbon atoms, which is graphene. Since then, new methods of preparing graphene have emerged in ...

Claims

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Application Information

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IPC IPC(8): H01L21/205H01L21/324C01B31/04C01B32/186
Inventor 郭辉张晨旭张玉明赵艳黎雷天民张克基
Owner XIDIAN UNIV
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