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Method for preparing graphene on SiC substrate based on Ni film annealing and chlorine reaction

A graphene and substrate technology, applied in the field of microelectronics, can solve problems such as low processing temperature, graphene film defects, and inappropriate production, and achieve the effects of low porosity, fast reaction rate, and uniform and controllable thickness

Inactive Publication Date: 2013-07-03
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chemical vapor deposition method provides an effective method for the controllable preparation of graphene, and its biggest advantage is that it can prepare graphene sheets with large area. The disadvantage is that it must be completed at high temperature, and during the production process, the graphene film may form defects
The improved microwave plasma chemical vapor deposition method has a lower processing temperature, only about 400°C, but it is still not suitable for mass production.

Method used

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  • Method for preparing graphene on SiC substrate based on Ni film annealing and chlorine reaction
  • Method for preparing graphene on SiC substrate based on Ni film annealing and chlorine reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1, making 4H-SiC and Cl 2 Reaction and Ni film annealing of large-area graphene.

[0037] Step 1: The 4H-SiC substrate is cleaned by the RCA method to remove organic and inorganic chemical pollutants on the sample surface:

[0038] (1a) Place the 4H-SiC substrate in deionized water for ultrasonic cleaning for 15 minutes, take it out, and rinse it repeatedly with deionized water;

[0039] (1b) Soak the cleaned 4H-SiC substrate in a solution of ammonia water: hydrogen peroxide: deionized water = 1:2:5, boil it, soak for 15 minutes, and repeatedly clean it for the second time with deionized water;

[0040] (1c) The 4H-SiC substrate after the second cleaning was immersed in a solution of hydrochloric acid: hydrogen peroxide: deionized water = 1:2:8, boiled, soaked for 15 minutes, and washed repeatedly with deionized water for the third time.

[0041] Step 2: performing hydrogen etching on the 4H-SiC substrate after RCA cleaning.

[0042] Set the pressure in th...

Embodiment 2

[0056] Embodiment 2, making 6H-SiC and Cl 2 Reaction and Ni film annealing of large-area graphene.

[0057] Step 1: Clean the 6H-SiC substrate by RCA method to remove organic and inorganic chemical pollutants on the sample surface:

[0058] (1.1) Place the 6H-SiC substrate in deionized water for ultrasonic cleaning for 15 minutes, take it out, and rinse it repeatedly with deionized water;

[0059] (1.2) Soak the cleaned 6H-SiC substrate in a solution of ammonia water: hydrogen peroxide: deionized water = 1:2:5, boil it, soak for 15 minutes, and wash it repeatedly with deionized water for the second time;

[0060] (1.3) The 6H-SiC substrate after the second cleaning was immersed in a solution of hydrochloric acid: hydrogen peroxide: deionized water = 1:2:8, boiled, soaked for 15 minutes, and washed repeatedly with deionized water for the third time.

[0061] Step 2: performing hydrogen etching on the 6H-SiC substrate cleaned by RCA.

[0062] Set the pressure in the reaction ...

Embodiment 3

[0075] Embodiment 3, making 6H-SiC and Cl 2 Reaction and Ni film annealing of large-area graphene.

[0076] Step A: Clean the 6H-SiC substrate by RCA method to remove organic and inorganic chemical pollutants on the sample surface:

[0077] The cleaning process is the same as step 1 in Example 1.

[0078] Step B: Set the pressure in the reaction chamber to 13.3Pa, raise the temperature to 1600°C, and perform hydrogen etching on the substrate for 20 minutes with a hydrogen flow rate of 120L / min to remove scratches on the surface of the 6H-SiC substrate and produce nanoscale high The periodic smooth step morphology.

[0079] Step C: After completing the hydrogen etching, lower the temperature to 1000°C, and pass in hydrogen with a flow rate of 4L / min for 15 minutes; cool down to 850°C, and pass in SiH with a flow rate of 0.5ml / min 4 , keep for 10 minutes; stop ventilation, raise the temperature to 1000°C, keep for 10 minutes; raise the temperature to 1100°C, keep for 10 minut...

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Abstract

The invention discloses a method for preparing graphene on an SiC substrate based on Ni film annealing and chlorine reaction and mainly solves the problems of poor continuity and unsmooth surface of graphene prepared in the prior art. The preparation method comprises the following implementation steps: firstly, carrying out RCA cleaning on the SiC substrate; carrying out hydrogen etching on the cleaned SiC substrate and removing etching residues; introducing mixed gas of Ar gas and Cl2 into a quartz tube reaction chamber and reacting SiC with Cl2 for 3-8 minutes at the temperature of 700-1,100 DEG C to generate a carbon film; then electron beam-depositing an Ni film on the carbon film; putting a sample sheet deposited with the Ni film into Ar gas and annealing for 10-30 minutes at the temperature of 950-1,150 DEG C to generate the graphene; and finally removing the Ni film from a graphene sample sheet by utilizing mixed solution of hydrochloric acid and copper sulfate. The graphene generated by the method has the advantages of smooth surface, good continuity and low porosity and can be used for manufacturing microelectronic devices and biological sensors or sealing gas and liquid.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor film material and a preparation method thereof, in particular to a method for preparing graphene on a SiC substrate based on Ni film annealing and chlorine gas reaction. technical background [0002] Graphene is a new carbonaceous material formed by dense packing of carbon atoms into a honeycomb lattice structure. 2 Hybrid carbon, that is, the basic structural unit of carbon connected by double bonds or other atoms, has some special physical properties, including: unique carrier characteristics; electrons transport in graphene with little resistance and move at sub-micron distances There is no scattering at the time, and it has good electron transport properties; good mechanical properties and good toughness, and the maximum pressure per 100nm distance can reach 2.9N; the unique energy band structure of graphene separates holes and electrons from each other...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/184
Inventor 郭辉凌显宝张玉明张晨旭雷天民
Owner XIDIAN UNIV
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