The invention discloses a method for preparing thin layer graphene on the surface of a metal catalyst. The method comprises the following steps: 1, putting a metal catalyst matrix in a chemical vapor deposition (CVD) system, and heating and annealing in an H2 and Ar gas mixed atmosphere; 2, carrying out a high temperature carburizing reaction by utilizing different carbon sources; 3, slowly heating samples while etching by introducing a large flow of hydrogen; and 4, completely discharging hydrogen in the CVD system through the Ar gas after the hydrogen etching, and rapidly cooling to room temperature for segregating uniform graphene layers. The number of the graphene layer can be accurately controlled by changing the thickness, the carburizing amount and the hydrogen etching amount of the metal catalyst matrix. The method has the advantages of simple process, easy operation, compatibility with the semiconductor industry, realization of the controllable preparation of graphene, and a graphene material produced through the method has important application prospects in the electronic field, the photoelectric field, the sensing field and the like.