19 results about "Hydrogen etching" patented technology

The invention provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, and relates to the technical field of laser chips, the surface-emitting gallium nitride VCSEL laser chip comprises a substrate, a low-temperature nucleating layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region, a polarization enhanced tunnel junction and the like, the defect blocking layer adopts an in-situ silicon nitride nano-porous mask layer to be matched with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, through pulse type lateral epitaxial overgrowth annihilation penetrating dislocation, and the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system to be combined with a hydrogen etching interruption modification technology, so that thick film growth with zero cracks and high reflectivity is realized; a polarization enhanced tunneling junction is used at the top to replace ITO, and the hole tunneling probability is enhanced by piezoelectric polarization in InGaN, so that efficient current injection with low working voltage and no absorption loss is realized, the dislocation density and the device voltage are remarkably reduced, and the yield of an epitaxial wafer and the photoelectric conversion efficiency are improved.

The application discloses a growth method for improving pit defects of a silicon carbide epitaxial wafer, and comprises the following steps: cleaning a silicon carbide substrate and placing the substrate in an epitaxial reaction chamber, introducing hydrogen, and performing high-temperature annealing treatment; increasing the hydrogen flow and the reaction chamber temperature, and performing hydrogen etching; reducing or maintaining the reaction chamber temperature, introducing a carbon source and a silicon source, and growing a buffer layer on the substrate surface; maintaining the gas introduction, increasing the reaction chamber temperature, and growing a gradient layer on the buffer layer; reducing the reaction chamber temperature, simultaneously opening a center gas source and an edge gas source, and growing a base epitaxial layer on the gradient layer; maintaining the reaction chamber temperature, adjusting the edge gas source flow to form a gradient flow, and growing a flat epitaxial layer on the base epitaxial layer. Through the substrate pretreatment-low rate epitaxy-high rate flat epitaxy, combined with the gradient process filling process, the application realizes the step-by-step filling and surface flattening of the pit defects, and effectively reduces the number of Pit defects and the epitaxial thickness uniformity.

A plasma processing method includes (a) providing a substrate on a substrate support in a chamber, the substrate having an underlying film, a first film on the underlying film, and a second film on the first film, the first film and the second film providing an opening exposing the underlying film, the second film comprising silicon; and (b) removing the second film by plasma generated from a process gas without supplying an electrical bias to the substrate support or by supplying an electrical bias having a level of 200 W or less, or 1 kV or less to the substrate support, the plasma comprising a hydrogen fluoride etchant.

The invention discloses a preparation method of a polycrystalline-to-single crystal copper foil through efficient hydrogen enhanced etching. The preparation method comprises the following steps: 1, sequentially soaking a rolled polycrystalline copper foil in an acid solution of acetone and an acid solution of absolute ethyl alcohol; 2, ultrasonically cleaning the copper foil in deionized water, and blow-drying the surface by adopting inert gas; 3, cutting the rolled polycrystalline copper foil into a regular shape, flatly laying the rolled polycrystalline copper foil on the quartz plate, repeating the step, putting the quartz plate into the tubular furnace, and ensuring that oxygen in a pipeline is completely removed; 4, under the normal pressure, inert gas output is kept in the tubular furnace, a temperature rising program is set, hydrogen is introduced when the temperature reaches the copper foil annealing temperature, and finally high-quality single crystal Cu (111) is stably obtained; the method has the advantages that a traditional electrolytic copper foil preparation link is completely omitted, the hydrogen etching time is prolonged in a CVD tubular furnace under normal pressure, the hydrogen flow is increased, selective etching of hydrogen to grain boundary high-energy defects is enhanced, abnormal growth of grains and thorough swallowing of the grain boundary are promoted, and the large-area single crystal Cu (111) with the single crystal rate larger than 99% is obtained.

The lithography method involves forming an image of the reticle on a substrate multiple times. Each such imaging process includes illuminating a first portion of the reticle-pellicle assembly with a radiation beam, and focusing the radiation scattered by the reticle and projecting it onto a target area on the substrate using a projection optical system. The lithography method further includes periodically illuminating a second portion of the reticle-pellicle assembly that at least partially surrounds the first portion with a radiation beam. Some pellicles are susceptible to hydrogen etching, and such pellicles are prone to damage in the area surrounding the central portion. Advantageously, by periodically illuminating the second portion of the reticle-pellicle assembly with a radiation beam, hydrogen etching of the second portion of the reticle-pellicle assembly can be suppressed.

The present invention relates to a method for passivating the cut edge of a solar cell, which uses hot wire chemical vapor deposition to form a passivation film layer, comprising: exposing the cut edge of the cell and facing the hot wire; passing an electric current through the hot wire to heat it, and passing H2 to perform hydrogen etching; maintaining heating, passing SiH4 at a first pressure, and simultaneously passing SiH4 and H2 while maintaining the first pressure to obtain an a-Si:H film layer; maintaining heating, and simultaneously passing SiH4 and NH3 at a second pressure to deposit SiN on the a-Si:H film layer. x :H film layer to form a passivation composite film layer on the cutting edge, or SiH4, NH3, H2 and O2 are introduced simultaneously under a second pressure to deposit SiN on the a-Si:H film layer. x O y The present invention provides a coating technology with low defect state density, high passivation performance, excellent weather resistance, and high optical transmittance, and a simple process, high cost-effectiveness, and scalable application.

The invention discloses a method for epitaxial growth of monocrystalline silicon on a silicon substrate, which comprises the following steps: a) providing a monocrystalline silicon substrate, cleaning the monocrystalline silicon substrate, putting the monocrystalline silicon substrate into an LPCVD (Low Pressure Chemical Vapor Deposition) reaction chamber, vacuumizing, introducing hydrogen, and carrying out high-temperature in-situ hydrogen etching annealing in an H2 atmosphere; the pressure of the high-temperature in-situ hydrogen etching annealing is 10 to 100 Pa, and the temperature is 700 to 900 DEG C; b) in an H2 atmosphere, adjusting the temperature of the substrate to 600-900 DEG C, carrying out heat preservation, and carrying out surface hydrogen terminating treatment, so that a stable hydrogen terminal reconstructed surface is formed on the surface of the substrate; and c) controlling the pressure of the reaction chamber to be 10-60Pa, introducing H2 and SiH4 in a volume flow ratio of 10: 1 to 80: 1, and performing monocrystalline silicon epitaxial layer growth on the substrate treated in the step b) at the temperature of 650-950 DEG C. The method has the characteristics of high efficiency, high quality, low cost, easiness in industrialization and the like.

The invention relates to the field of preparation of protective films of extreme ultraviolet lithography masks, in particular to a preparation method of a single-walled carbon nanotube composite protective film for a hydrogen-etching-resistant extreme ultraviolet lithography mask. Growing a single-walled carbon nanotube by using a floating catalyst chemical vapor deposition method, and preparing and assembling a single-walled carbon nanotube film by using a vapor filtration deposition method; the surface of the thin film formed by the single-walled carbon nanotube / tube bundle is coated with the hydrogen etching resistant protective layer, so that the hydrogen etching resistant capability of the protective film of the single-walled carbon nanotube base ultraviolet lithography mask plate is improved. Wherein in order to prevent film failure caused by damage to the single-walled carbon nanotubes in the compounding process, the single-walled carbon nanotube film needs to have high crystallinity, and the Raman spectrum G / D ratio of the single-walled carbon nanotube film is gt; 200). The hydrogen plasma etching resistance of the prepared single-walled carbon nanotube composite film is improved by 4-6 times compared with that of an uncompounded single-walled carbon nanotube film, and meanwhile, the single-walled carbon nanotube composite film has 13.5 nm extreme ultraviolet light transmittance exceeding 85%.

The application provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, relates to the technical field of laser chips, and comprises a substrate, a low-temperature nucleation layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region and a polarization enhancement type tunnel junction and the like. The defect blocking layer adopts an in-situ silicon nitride nano porous mask layer in cooperation with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, penetrative dislocations are annihilated through pulse type lateral epitaxial overgrowth, the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system combined with a hydrogen etching interruption modification technology, zero crack and high reflectivity thick film growth are realized, the top uses a polarization enhancement type tunnel junction to replace ITO, the hole tunneling probability is enhanced by using the piezoelectric polarization in InGaN, low working voltage, absorption loss-free high-efficiency current injection are realized, the dislocation density and the device voltage are significantly reduced, and the epitaxial wafer yield and the photoelectric conversion efficiency are improved.

A plasma processing method includes: (a) a step of providing a substrate on a substrate support portion in a chamber, the substrate having a base film, a first film on the base film, and a second film on the first film, the first film and the second film providing an opening exposing the base film, the second film including silicon; and (b) a step of removing the second film using plasma generated from a processing gas, the plasma including hydrogen fluoride etchant, without supplying an electric bias to the substrate support portion or supplying an electric bias having a level of 200 W or less or 1 kV or less to the substrate support portion.

The invention discloses a solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The preparation method of the solar cell comprises the following steps: carrying out HPT treatment on an intrinsic amorphous silicon layer on the surface of an N-type silicon substrate to obtain a hydrogenated intrinsic amorphous silicon layer; preparing a doped microcrystalline silicon layer on the surface of the hydrogenated intrinsic amorphous silicon layer; hydrogen and SiH4 are used as reaction gas sources in the HPT treatment, and the gas flow rate ratio of the hydrogen to the SiH4 is (600: 1)-(900: 1); the deposition power of the HPT treatment is 500 W to 8000 W. Through the HPT treatment, on one hand, hydrogen etching and bombardment damage can be reduced, the quality of the intrinsic amorphous silicon layer is improved, the service life of minority carriers is prolonged, and the open-circuit voltage is increased; on the other hand, the seed crystal nucleation process can be accelerated, and the incubation layer thickness of the microcrystalline layer is reduced, so that crystallization of the microcrystalline layer is promoted, and the crystallization rate is increased.

The application discloses an electrode for electrochemical degradation of biomass wastewater and a preparation method and application thereof, and the preparation method of the electrode comprises the following steps: performing surface oxidation pretreatment on a planar boron-doped diamond electrode; adding a mixed solution of a metal salt and a precipitant into a reaction kettle to perform a hydrothermal reaction on the pretreated boron-doped diamond electrode, so that a metal layer is uniformly grown on the surface of the electrode; placing the metal / boron-doped diamond electrode into a tube furnace, introducing hydrogen gas, and performing high-temperature etching under the catalysis of the metal, so that a metal / porous boron-doped diamond electrode is obtained after cooling; and soaking the metal / porous boron-doped diamond electrode in strong acid to obtain a porous boron-doped diamond electrode. The planar boron-doped diamond electrode is used as a basis, a metal layer is grown on the surface of the boron-doped diamond electrode by using a hydrothermal method, and a porous boron-doped diamond electrode with excellent performance is prepared through high-temperature hydrogen etching technology, so that the active area of the electrode is effectively increased, the anodic oxidation efficiency is improved, and biomass chemical wastewater can be efficiently degraded.

A lithographic method includes forming an image of a reticle multiple times on a substrate. Each such image forming process includes: irradiating a reticle and a first portion of a pellicle with a radiation beam; and collecting the radiation scattered by the reticle and projecting the radiation onto a target area of the substrate using projection optics. The lithographic method further includes periodically illuminating the reticle and a second portion of the pellicle with the radiation beam, the reticle and the second portion of the pellicle at least partially surrounding the first portion. Some pellicles are susceptible to hydrogen etching, and such pellicles tend to fail in areas surrounding the central portion. Advantageously, hydrogen etching of the reticle and the second portion of the pellicle can be suppressed by periodically irradiating the reticle and the second portion of the pellicle with a radiation beam.

The utility model relates to a pipeline with a hydrogen storage alloy coating and hydrogen energy production, storage, installation and / or transportation equipment, belongs to the technical field of metal protection, and solves the problems of pipeline corrosion caused by hydrogen corrosion and hydrogen permeation in the high-pressure hydrogen storage and transportation process and high cost of the existing hydrogen-resistant material in the prior art. The utility model provides a pipeline with a hydrogen storage alloy coating. The pipeline comprises a pipe shell, the hydrogen storage alloy coating arranged on the inner surface of the pipe shell and a heat exchange device. The heat exchange device is in contact with the outer surface of the tube shell; the number of the heat exchange devices is one or more, and the heat exchange devices have the refrigerating and heating functions. The hydrogen storage alloy coating can stably restrain hydrogen atoms in the hydrogen storage alloy, so that direct contact between hydrogen molecules and the inner wall of a container is remarkably reduced, and corrosion caused by hydrogen is effectively reduced; and the temperature of the pipeline can be adjusted through the heat exchange device to realize hydrogen absorption and hydrogen desorption conversion of the coating, so that the hydrogen insulation capacity is kept for a long time, and the system operation cost is remarkably reduced.

The invention provides a method for leveling the surface of a III-V compound material layer and an epitaxial growth method, hydrogen and protective gas are alternately introduced and periodically used, hydrogen is firstly introduced for etching in each period, and then the surface of the III-V compound material layer is flattened. The surface of the material subjected to hydrogen etching has the characteristics of III-group element metal rich in a first III-V compound material layer, and by-products of the III-group element metal react to a stable III-V compound by subsequently introduced protective gas, so that a controllable leveling mode is constructed in one period, and the yield of the material is improved. Through the controllable leveling process of the preset period, leveling of the material surface can be achieved, even back etching of a certain thickness can be carried out on the material surface, an interface layer can be formed on the material surface in the leveling process, and the performance of a device can be improved through formation of the interface layer in a specific device structure.

The present application relates to the technical field of semiconductor material, in particular to a method for epitaxial uniform graphene on silicon carbide substrate, comprising the following steps: (1) the silicon carbide substrate is first subjected to hydrogen etching to remove processing defects on the surface of the substrate, and a regular silicon carbide step structure is formed; (2) the silicon carbide substrate is subjected to two-step annealing in argon, wherein the first step annealing is heat preservation at 1530-1630 DEG C for 0.5-1 h, and the pressure is kept at 800-900 mbar; the second step annealing is heat preservation at 1650-1750 DEG C for 0.5-1 h, and the pressure is kept at 800-900 mbar. Compared with the conventional direct heating to the graphene growth temperature, the temperature stability in the graphene growth process is controlled by the present application in stages, the surface step morphology is obviously improved, the irregular step coalescence in the growth process is successfully inhibited, and the stable and uniform morphology is more conducive to the layer uniformity of the graphene on the whole substrate.

The invention belongs to the technical field of advanced functional materials, and provides a graphene fiber composite film, a preparation method thereof and an electric heating material. Solid-state pyrolytic carbon is pre-deposited on the inner wall of a reaction device, in the subsequent chemical vapor deposition process, the solid-state pyrolytic carbon is directly deposited on the surface of the inorganic fiber under hydrogen etching or becomes gaseous methane or CH3 / CH2 / CH free radicals again, vapor chemical deposition is conducted on the surface of the inorganic fiber material, different airflow directions are formed, and the surface of the inorganic fiber material is subjected to chemical vapor deposition. The problem of non-uniform carbon source concentration caused by deposition of the carbon source along a single airflow direction is solved, and the thickness uniformity of the graphene fiber composite film is improved; after the first chemical vapor deposition, the two ends of the inorganic fiber material along the introduction direction of the gaseous carbon source are turned by 180 degrees, and then the second chemical vapor deposition is performed, so that the problem of non-uniform growth of graphene caused by non-uniform carbon source concentration due to the deposition of the carbon source along the airflow direction is solved, and the uniform growth of graphene is promoted.

The invention discloses a multi-gradient current and methane coordinated regulation single crystal diamond nucleation method, which comprises the following steps: placing an oxide composite substrate with an Ir film in a chamber of MPCVD equipment for a nucleation test, and carrying out hydrogen etching cleaning on the Ir film; introducing methane gas with a preset volume fraction into the chamber, and fully and uniformly mixing the methane gas with gas in the chamber; dC voltage is started, the nucleation process is divided into a plurality of stages according to the change condition of the current, the methane gas concentration is adjusted at each stage at the same time, and single crystal diamond nucleation is achieved under the cooperative regulation and control of the multi-gradient current and methane. According to the method, amorphous impurities and grain boundary defects are effectively inhibited, the film crystallization quality and the interface bonding strength are improved, and a high-quality and high-density monocrystal diamond crystal nucleus is obtained; meanwhile, the process is simple and convenient to operate, adapts to interface characteristic differences of different oxide substrates, and greatly improves nucleation uniformity and process stability.

An extreme ultraviolet light generation chamber device includes a chamber including a plasma generation region in which plasma is generated from a droplet target of tin irradiated with laser light; a gas supply port supplying an etching gas containing hydrogen to the internal space; a cylindrical partition wall surrounding the plasma generation region, and having an opening on the internal space side as an inlet port of a gas and an opening at the outside of the chamber as an exhaust port of the gas; an exhaust device; and a concentrating mirror. The partition wall has an inner circumferential surface on which tin is more likely to be deposited on a downstream side of a predetermined position on a downstream side of the plasma generation region in a flow direction of the gas inside the partition wall than on an upstream side of the predetermined position.