Method for preparing single-layer graphene without buffer layer on SiC substrate

A single-layer graphene, buffer-free technology, applied in the field of single-layer graphene, can solve the problems of many layers of graphene and no single-layer graphene prepared

Active Publication Date: 2017-11-14
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Both of the above two methods prepare high-quality graphene on SiC, but the obtained graphene has a large number of layers and has a buffer layer, and neither of them can produce high-quality true single-layer graphene.

Method used

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  • Method for preparing single-layer graphene without buffer layer on SiC substrate
  • Method for preparing single-layer graphene without buffer layer on SiC substrate
  • Method for preparing single-layer graphene without buffer layer on SiC substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0040] A method for preparing single-layer graphene without a buffer layer on a SiC substrate, comprising the steps of:

[0041] (1) The silicon surface of the 3-inch diameter 4H semi-insulating SiC wafer substrate is chemically mechanically polished (CMP) to make the surface roughness less than 0.5nm, and then standard wet cleaning is performed to remove surface pollutants.

[0042] (2) Put the SiC substrate cleaned in the above step (1) with the silicon side up into the graphite tray in the heating furnace chamber, and vacuumize the furnace chamber until the vacuum degree reaches 10 -2 Pa.

[0043] (3) The temperature was raised to 1600°C, hydrogen gas was introduced into the furnace cavity, and the pressure was controlled at 800mbar, and hydrogen etching was performed on the SiC substrate sample to form a regular step morphology on the surface of the SiC substrate. The hydrogen etching time is 20min. After the hydrogen etching is completed, a regular step morphology is form...

Embodiment 2

[0048] A method for preparing single-layer graphene without a buffer layer on a SiC substrate, according to the same method for preparing single-layer graphene as in Example 1, except that the hydrogen annealing temperature is 800°C. The obtained sample was tested with a Raman spectrometer, and the results showed that there was no buffer layer, and the SiC substrate was covered with single-layer graphene, and the graphene was of good quality.

Embodiment 3

[0050] A method for preparing single-layer graphene without a buffer layer on a SiC substrate, according to the same method for preparing single-layer graphene as in Example 1, except that the hydrogen annealing temperature is 1200°C. The obtained sample was tested with a Raman spectrometer, and the results showed that there was no buffer layer, and the SiC substrate was covered with single-layer graphene, and the graphene was of good quality.

[0051] Combining the detailed descriptions of the above examples 1-3 with the characterization results of the examples, it can be seen that this method can prepare single-layer graphene without a buffer layer on a SiC substrate, and at a suitable hydrogen annealing temperature, the prepared The resulting single-layer graphene has high quality and good uniformity, which provides a favorable material basis for the subsequent application of graphene radio frequency devices.

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Abstract

The invention relates to a method for preparing single-layer graphene without a buffer layer on a SiC substrate. The method comprises the following steps: performing hydrogen etching on a silicon surface of the SiC substrate to form regular step morphology; introducing argon gas and growing a graphene buffer layer; performing hydrogen annealing on the SiC substrate with only a layer of graphene buffer layer on the surface to insert the hydrogen atom between the graphene buffer layer and the SiC substrate, so that the graphene buffer layer becomes single-layer graphene. According to the method provided by the invention, a problem that the graphene migration rate is influenced by the buffer layer formed when graphene is grown on the silicon surface of the SiC substrate in a SiC pyrolysis method is solved; meanwhile, real single-layer graphene without a buffer layer is obtained and can be directly applied to a radio-frequency device.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and relates to a method for preparing graphene on a SiC substrate, in particular to a method for preparing single-layer graphene without a buffer layer on the SiC substrate. Background technique [0002] Graphene, as a two-dimensional carbon material, was first stripped from graphite in 2004 by two physicists from the University of Manchester, UK. Its excellent physical properties, such as high electron mobility, high thermal conductivity, and its optical transparency, have made graphene widely concerned in the scientific community, and it has broad application prospects in radio frequency devices and many other fields. [0003] At present, the main methods for preparing graphene mainly include (1) micromechanical exfoliation method, (2) chemical vapor deposition method (CVD method), (3) redox method and (4) SiC pyrolysis method. Among them, (1) the micromechanical exfoliation method is to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/85
Inventor 陈秀芳于璨璨徐现刚
Owner SHANDONG UNIV
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