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Graphene semiconductor preparation device and method

A technology for graphene semiconductors and preparation devices, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems affecting the promotion and application of graphene devices, the large impact of graphene morphology and performance, and the difficulty of transferring graphene, etc. problems, to achieve the effect of improving photoelectric conversion efficiency, wide applicability, and good uniformity

Inactive Publication Date: 2020-07-14
山东华达新材料有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, there are the following defects: the morphology and performance of the prepared graphene are greatly affected by the substrate material, graphene is difficult to transfer, and it is difficult to be compatible with the current mature large-scale integrated circuit process, which affects the promotion and application of graphene-based devices

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  • Graphene semiconductor preparation device and method

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preparation example Construction

[0024] A kind of graphene semiconductor preparation method, comprises the following steps:

[0025] I. Provide a SiC substrate, use the etching effect of hydrogen on the substrate at 1450-1600°C to planarize the surface of the SiC substrate, etch for 25-35min to form a stepped array shape with atomic-level flatness Surface appearance; SiC substrate is one of 4H-SiC, 6H-SiC, 3C-SiC single crystals. SiC substrate material can provide the C source required for graphene preparation. Since the SiC crystal is selected, it is determined that the graphene must be processed under high temperature conditions.

[0026] Etching using hydrogen gas can remove mechanical damage and scratches caused by the grinding and polishing process of the SiC surface, so that the SiC surface presents a regular step shape. The reaction of H2 and SiC at high temperature will generate gaseous hydrocarbons such as C2H2, etc., and also generate some basic Si-based by-products and other impurities. However,...

Embodiment 1

[0042] A kind of graphene semiconductor preparation method, comprises the following steps:

[0043] 1. Provide a SiC substrate, use the etching effect of hydrogen on the substrate at 1450 ° C to planarize the surface of the SiC substrate, etch for 25 minutes, so as to form a surface with a stepped array morphology with atomic-level flatness; SiC substrate is 4H-SiC single crystal

[0044] II. The temperature of the SiC substrate is raised to 1000°C in an argon atmosphere of 1.5L / min, so that the self-assembly process of C atoms can be carried out more fully, and a large-area and uniform graphene film can be produced; the pressure of argon is controlled in 2×10 3 Below Pa.

[0045] III. In an ultra-high vacuum environment, continue to heat the surface of the SiC substrate to 1400°C to break the carbon-silicon bond on the surface of the SiC substrate, and the Si atoms will desorb from the surface before the sublimation of the C atoms, and the surface is rich in The set of C ato...

Embodiment 2

[0050] A kind of graphene semiconductor preparation method, comprises the following steps:

[0051] 1. Provide a SiC substrate, use the etching effect of hydrogen on the substrate at 1500 ° C to planarize the surface of the SiC substrate, etch for 30 minutes, so as to form a surface with a step array morphology with atomic-level flatness; SiC substrate 6H-SiC single crystal;

[0052] II. Raise the temperature of the SiC substrate to 1050°C in an argon atmosphere of 1.5L / min, so that the self-assembly process of C atoms can be carried out more fully, and a large-area and uniform graphene film can be produced; the pressure of argon is controlled in 2×10 3 Below Pa.

[0053] III. In an ultra-high vacuum environment, continue to heat the surface of the SiC substrate to 1450°C to break the carbon-silicon bond on the surface of the SiC substrate, and the Si atoms will desorb from the surface before the sublimation of the C atoms, and the surface is rich in The set of C atoms is r...

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Abstract

The invention discloses a graphene semiconductor preparation device and method, and the method comprises the following steps: I, providing a SiC substrate, and etching the SiC substrate through hydrogen; II, heating the SiC substrate slice in an argon atmosphere; III, forming a hexagonal honeycomb-shaped graphene film in an ultrahigh vacuum environment; and IV, forming the graphene semiconductor composite material. A graphene semiconductor preparation device comprises a hydrogen etching module; a C atom self-assembly module; a homoepitaxy growth module; reaction synthesis module. According tothe method, large-area and high-quality graphene can be obtained, and the obtained graphene has good uniformity and has good compatibility with a current integrated circuit technology; and meanwhile,by utilizing the advantages of the semiconductor material and the characteristics of the graphene, the preparation of the graphene and the compounding of the graphene and the semiconductor material are simultaneously carried out, and the applicability is wide.

Description

technical field [0001] The invention relates to a preparation device and method, in particular to a graphene semiconductor preparation device and method. Background technique [0002] Semiconductor is the backbone of modern electronics industry, it is the core material of transistors, integrated circuits and various electronic components. With the development of semiconductor technology, the performance improvement space of traditional elemental semiconductors such as silicon and germanium is getting smaller and smaller. Graphene has received more and more attention in the field of semiconductor technology due to its excellent electrical conductivity and broad development prospects. At present, chemical vapor deposition is the most important way to prepare high-quality, large-area graphene. However, there are the following defects: the morphology and performance of the prepared graphene are greatly affected by the substrate material, graphene is difficult to transfer, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/188
CPCC01B2204/22C01B32/188
Inventor 吕尊华李继森司崇殿
Owner 山东华达新材料有限公司
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