Cu film annealing based method for preparing large-area graphene on SiC substrate

A graphene, large-area technology, applied in the field of microelectronics, can solve the problems of unstable carrier mobility, inability to use large-scale production, small graphene area, etc., to achieve easy control of the growth process, high uniformity, and surface. smooth effect
CN103183335AInactive Publication Date: 2013-07-03XIDIAN UNIV
4 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2013-07-03
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention discloses a Cu film annealing based method for preparing large-area graphene on an SiC substrate, and mainly solves problems of poor continuity, high porosity and uneven layers of graphene prepared in the prior art. The method comprises the steps as follows: firstly, cleaning an SiC sample with an RCA cleaning method; secondly, performing hydrogen etching on the cleaned SiC sample; thirdly, feeding Ar gas and CCl4 gas into a gas mixing chamber for mixing, feeding the mixed gas into a reaction chamber, and enabling the CCl4 gas and the SiC to react and generate a carbon film; fourthly, plating a Cu film on the generated carbon film; fifthly, placing the sample plated with the Cu film in the Ar gas, annealing the sample at the temperature ranging from 900 DEG C to 1100 DEG C for 15 to 25 minutes, and enabling the carbon film to reconstruct the graphene; and sixthly, removing the Cu film from the graphene sample. The method has the advantages of good continuity and evenness and low porosity of the graphene and can be used in various fields of biology, optics, electricity, sensors and the like.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor film material and a preparation method thereof, in particular to a method for preparing large-area graphene on a SiC substrate based on Cu film annealing. technical background

[0002] With the announcement of the winner of the Nobel Prize in Physics in 2010, Graphene has also become the focus of discussion. In 2004, Andre Geim and Konstantin Novoselov of the University of Manchester successfully peeled off graphene from graphite using ordinary adhesive tape. This material is only one carbon atom thick and is currently known the thinnest material. Not only is it the thinnest known material, it's also very strong and flexible; as a single substance, it transports electrons faster than any known conductor at room temperature. Graphene can be applied to the fields of transistors, touch screens, and gene sequencing, and it is expected to help physicists make ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More